TMUX1574

TEXAS INSTRUMENTS

Manufacturer

Texas Instruments

Overview

Part: TMUX1574 from Texas Instruments

Type: Low-Capacitance, 2:1 (SPDT) 4-Channel, Powered-Off Protected Switch

Key Specs:

  • Supply range: 1.5 V to 5.5 V
  • Low on-capacitance: 7.5 pF
  • Low on-resistance: 2 Ω
  • High bandwidth: 2 GHz
  • Operating temperature: -40°C to +125°C
  • Powered-off protection signal voltage: up to 3.6 V
  • Maximum input/output voltage: 5.5 V

Features:

  • 1.8 V Logic Compatible
  • Supports Input Voltage Beyond Supply (up to VDD x 2, max 5.5V)
  • Integrated Pull Down Resistor on Logic Pins
  • Bidirectional Signal Path
  • Fail-Safe Logic
  • Powered-off Protection up to 3.6 V Signals
  • Pinout compatible to SN74CBTLV3257
  • CMOS switch
  • 2:1 SPDT switch configuration with 4-channels

Applications:

  • Flash memory sharing
  • JTAG multiplexing
  • SPI multiplexing
  • eMMC multiplexing
  • Servers
  • Data center switches & routers
  • Wireless infrastructure
  • PC & notebooks
  • Building automation
  • Grid infrastructure
  • ePOS
  • Appliances

Package:

  • TSSOP (16): 5.00 mm × 4.40 mm
  • UQFN (16): 2.60 mm x 1.80 mm
  • SOT-23-THIN (16): 4.20 mm x 2.00 mm

Features

1• Wide supply range: 1.5 V to 5.5 V • Low on-capacitance: 7.5 pF

• Low on-resistance: 2 Ω • High bandwidth: 2 GHz

• -40°C to +125°C operating temperature

• 1.8 V Logic Compatible

Supports Input Voltage Beyond Supply

Integrated Pull Down Resistor on Logic Pins

Bidirectional Signal Path

Fail-Safe Logic

Powered-off Protection up to 3.6 V Signals

– Pinout compatible to SN74CBTLV3257

Applications

Pin Configuration

Pin Functions

  • NAME
  • SEL
  • S1A
  • S1B
  • D1
  • S2A
  • S2B
  • D2
  • GND
  • D3
  • S3B
  • S3A
  • D4
  • S4B
  • S4A
  • EN
  • VDD

(1) I = input, O = output, I/O = input and output, P = power

(2) Refer to Device Functional Modes for what to do with unused pins.

Electrical Characteristics

VDD = 1.5 V to 5.5 V, GND = 0V, TA = –40°C to +125°C

Typical values are at VDD = 3.3 V, TA = 25°C, (unless otherwise noted).

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLY
VDDPower supply voltage1.55.5V
IDDActive supply currentVSEL = 0 V, 1.4V or VDD
VS = 0 V to 5.5 V
4068μA
IDD_STANDB
Y
Supply current when disabledVEN = 1.4 V or VDD
VS = 0 V to 5.5 V
7.515μA
DC CHARACTERISTICS
RONOn-resistanceVS = 0 V to VDD*2
VS(max) = 5.5 V
ISD = 8 mA
Refer to ON-State Resistance Figure
24.5Ω
ΔRONOn-resistance match between channelsVS = VDD
ISD = 8 mA
Refer to ON-State Resistance Figure
0.070.28Ω
RON (FLAT)On-resistance flatnessVS = 0 V to VDD
ISD = 8 mA
Refer to ON-State Resistance Figure
11.8Ω
IPOFFPowered-off I/O pin leakage currentVDD = 0 V
VS = 0 V to 3 V
VD = 0 V
TA = 25°C
Refer to Ipoff Leakage Figure
–100.0110nA
IPOFFPowered-off I/O pin leakage currentVDD = 0 V
VS = 0 V to 3.6 V
VD = 0 V
Refer to Ipoff Leakage Figure
–20.012μA
IS(OFF)
ID(OFF)
OFF leakage currentSwitch Off
VD = 0.8VDD / 0.2VDD
VS = 0.2VDD / 0.8VDD
Refer to Off Leakage Figure
–1000.03100nA
ID(ON)
IS(ON)
ON leakage currentSwitch On
VD = 0.8VDD / 0.2VDD, S pins floating
or
VS = 0.8VDD / 0.2VDD, D pins floating
Refer to On Leakage Figure
–500.0150nA
LOGIC INPUTS
VIHInput logic high1.25.5V
VILInput logic low00.45V
IIHInput high leakage currentVSEL = 1.8 V, VDD1±2μA
IILInput low leakage currentVSEL = 0 V0.2±2μA
RPDInternal pull-down resistor on logic pins6
CILogic input capacitanceVSEL = 0 V, 1.8 V or VDD
f = 1 MHz
3pF

Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).(1)(2)(3)

MINMAXUNIT
VDDSupply voltage–0.56V
VSEL or VENLogic control input pin voltage (SEL or EN)–0.56V
ISEL or IENLogic control input pin current (SEL or EN)–3030mA
VS or VDSource or drain pin voltage–0.56V
IS or ID (CONT)Source and drain pin continuous current: (SxA, SxB, Dx)–2525mA
TstgStorage temperature–65150°C
TJJunction temperature150°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

  • (2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
  • (3) All voltages are with respect to ground, unless otherwise specified.

Recommended Operating Conditions

MINMAXUNIT
VDDSupply voltage1.55.5V
VS or VD(1)
Signal path input/output voltage (source or drain pin), VDD ≥ 1.5 V
0VDD x 2V
VS_off or VD_off(2)
Signal path input/output voltage (source or drain pin), VDD < 1.5 V
03.6V
VSEL or VENLogic control input voltage (EN, SEL)05.5V
TAAmbient temperature–40125°C
  • (1) Device input and output can operate up to VDD x 2, with a maximum input and output voltage of 5.5 V.
  • (2) VS_off and VD_off refers to the voltage at the source or drain pins when supply is less than 1.5 V.

6.4 Thermal Information

DEVICEDEVICEDEVICE
THERMAL METRIC(1)PW (TSSOP)DYY (SOT-23)RSV (UQFN)
16 PINS16 PINS16 PINS
RθJAJunction-to-ambient thermal resistance117.4123.0129.2
RθJC(top)Junction-to-case (top) thermal resistance47.970.569.7
RθJBJunction-to-board thermal resistance63.750.458.7
ΨJTJunction-to-top characterization parameter6.95.03.6
ΨJBJunction-to-board characterization parameter63.150.356.8
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/AN/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VDD = 1.5 V to 5.5 V, GND = 0V, TA = –40°C to +125°C

Typical values are at VDD = 3.3 V, TA = 25°C, (unless otherwise noted).

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLY
VDDPower supply voltage1.55.5V
IDDActive supply currentVSEL = 0 V, 1.4V or VDD
VS = 0 V to 5.5 V
4068μA
IDD_STANDB
Y
Supply current when disabledVEN = 1.4 V or VDD
VS = 0 V to 5.5 V
7.515μA
DC CHARACTERISTICS
RONOn-resistanceVS = 0 V to VDD*2
VS(max) = 5.5 V
ISD = 8 mA
Refer to ON-State Resistance Figure
24.5Ω
ΔRONOn-resistance match between channelsVS = VDD
ISD = 8 mA
Refer to ON-State Resistance Figure
0.070.28Ω
RON (FLAT)On-resistance flatnessVS = 0 V to VDD
ISD = 8 mA
Refer to ON-State Resistance Figure
11.8Ω
IPOFFPowered-off I/O pin leakage currentVDD = 0 V
VS = 0 V to 3 V
VD = 0 V
TA = 25°C
Refer to Ipoff Leakage Figure
–100.0110nA
IPOFFPowered-off I/O pin leakage currentVDD = 0 V
VS = 0 V to 3.6 V
VD = 0 V
Refer to Ipoff Leakage Figure
–20.012μA
IS(OFF)
ID(OFF)
OFF leakage currentSwitch Off
VD = 0.8VDD / 0.2VDD
VS = 0.2VDD / 0.8VDD
Refer to Off Leakage Figure
–1000.03100nA
ID(ON)
IS(ON)
ON leakage currentSwitch On
VD = 0.8VDD / 0.2VDD, S pins floating
or
VS = 0.8VDD / 0.2VDD, D pins floating
Refer to On Leakage Figure
–500.0150nA
LOGIC INPUTS
VIHInput logic high1.25.5V
VILInput logic low00.45V
IIHInput high leakage currentVSEL = 1.8 V, VDD1±2μA
IILInput low leakage currentVSEL = 0 V0.2±2μA
RPDInternal pull-down resistor on logic pins6
CILogic input capacitanceVSEL = 0 V, 1.8 V or VDD
f = 1 MHz
3pF

6.6 Dynamic Characteristics

VDD = 1.5 V to 5.5 V, GND = 0V, TA = –40°C to +125°C

Typical values are at VDD = 3.3 V, TA = 25°C, (unless otherwise noted).

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
COFFSource and drain off capacitanceVS = 2.5 V
VSEL= 0 V
f = 1 MHz
Refer to Capacitance Figure
Switch
OFF
3.56pF
CONSource and drain on capacitanceVS = 2.5 V
VSEL= 0 V
f = 1 MHz
Refer to Capacitance Figure
Switch
ON
7.512pF
QCCharge InjectionVS = VDD/2
RS = 0 Ω, CL =1 nF
Refer to Charge Injection Figure
Switch
ON
3.5pC
RL = 50 Ω
f = 100 kHz
Refer to Off Isolation Figure
Switch
OFF
–90dB
OISOOff isolationRL = 50 Ω
f = 1 MHz
Refer to Off Isolation Figure
Switch
OFF
–75dB
XTALKChannel to Channel crosstalkRL = 50 Ω
f = 100 kHz
Refer to Crosstalk Figure
Switch
ON
–90dB
BWBandwidthRL = 50 Ω
Refer to Bandwidth Figure
Switch
ON
2GHz
ILOSSInsertion lossRL = 50 Ω
f = 1 MHz
Refer to Bandwidth Figure
Switch
ON
–0.12dB

6.7 Timing Requirements

VDD = 1.5 V to 5.5 V, GND = 0V, TA = –40°C to +125°C

Typical values are at VDD = 3.3 V, TA = 25°C, (unless otherwise noted).

PARAMETERTEST CONDITIONSMINNOMMAXUNIT
tTRANTransition time from control inputVDD = 2.5 V to 5.5 V
VS = VDD
RL = 200 Ω, CL = 15pF
Refer to Transition Timing Figure
160350ns
tTRANTransition time from control inputVDD < 2.5 V
VS = VDD
RL = 200 Ω, CL = 15pF
Refer to Transition Timing Figure
180580ns
tON(EN)Device turn on time from enable pinVS = VDD
RL = 200 Ω, CL = 15pF
Refer to Ton(EN) & Toff(EN) Figure
1235μs
tOFF(EN)Device turn off time from enable pinVS = VDD
RL = 200 Ω, CL = 15pF
Refer to Ton(EN) & Toff(EN) Figure
5095ns
tON(VDD)Device turn on time (VDD to output)VS = 3.6 V
VDD rise time = 1us
RL = 200 Ω, CL = 15pF
Refer to Ton(vdd) & Toff(vdd) Figure
2060μs
tOFF(VDD)Device turn off time (VDD to output)VS = 3.6 V
VDD fall time = 1us
RL = 200 Ω, CL = 15pF
Refer to Ton(vdd) & Toff(vdd) Figure
1.22.7μs
tOPEN (BBM)Break before make timeVS = 1 V
RL = 200 Ω, CL = 15pF
Refer to Topen(BBM) Figure
0.5ns
tSK(P)Inter - channel skew - QFN (RSV)Refer to Tsk Figure5ps
tSK(P)Inter - channel skew - DYY (SOT-23)Refer to Tsk Figure9ps
tSK(P)Inter - channel skew - TSSOP (PW)Refer to Tsk Figure18ps
tPDPropagation delay - QFN (RSV)Refer to Tpd Figure50ps
tPDPropagation delay - DYY (SOT-23)Refer to Tpd Figure75ps
tPDPropagation delay - TSSOP (PW)Refer to Tpd Figure95ps

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6.8 Typical Characteristics

At TA = 25 °C, VDD = 5 V (unless otherwise noted).

Copyright © 2018–2019, Texas Instruments Incorporated

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Thermal Information

DEVICEDEVICEDEVICE
THERMAL METRIC(1)PW (TSSOP)DYY (SOT-23)RSV (UQFN)
16 PINS16 PINS16 PINS
RθJAJunction-to-ambient thermal resistance117.4123.0129.2
RθJC(top)Junction-to-case (top) thermal resistance47.970.569.7
RθJBJunction-to-board thermal resistance63.750.458.7
ΨJTJunction-to-top characterization parameter6.95.03.6
ΨJBJunction-to-board characterization parameter63.150.356.8
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/AN/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

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