Skip to main content

TM4C123BH6PMI7R

ARM Cortex-M4F Microcontroller

The TM4C123BH6PMI7R is a arm cortex-m4f microcontroller from Texas Instruments. View the full TM4C123BH6PMI7R datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

ARM Cortex-M4F Microcontroller

Overview

Part: Tiva ™ TM4C123BH6PM Microcontroller — Texas Instruments

Type: ARM Cortex-M4F Microcontroller

Description: 32-bit ARM Cortex-M4F processor core operating at up to 80 MHz, featuring on-chip Flash, SRAM, and EEPROM memory, serial communications, advanced motion control, and analog peripherals.

Operating Conditions:

  • Operating temperature: -40 to 85 °C
  • Max clock frequency: 80 MHz

Features:

  • ARM Cortex-M4F Processor Core
  • On-Chip Memory
  • Serial Communications Peripherals
  • System Integration
  • Advanced Motion Control
  • Analog Peripherals
  • JTAG and ARM Serial Wire Debug
  • Hibernation Module
  • Micro Direct Memory Access (μDMA)

Features

The TM4C123BH6PM microcontroller component features and general function are discussed in more detail in the following section.

Pin Configuration

Table 22-6. Possible Pin Assignments for Alternate Functions

# of Possible AssignmentsAlternate FunctionGPIO Function
oneAIN0PE3
AIN1PE2
AIN10PB4
AIN11PB5
AIN2PE1
AIN3PE0
AIN4PD3
AIN5PD2
AIN6PD1
AIN7PD0
AIN8PE5
AIN9PE4
C0+PC6
C0-PC7
C0oPF0
C1+PC5
C1-PC4
C1oPF1
CAN1RxPA0
CAN1TxPA1
I2C0SCLPB2
I2C0SDAPB3
I2C1SCLPA6
I2C1SDAPA7
I2C2SCLPE4
I2C2SDAPE5
I2C3SCLPD0
I2C3SDAPD1
IDX1PC4
M0PWM0PB6
M0PWM1PB7
M0PWM2PB4
M0PWM3PB5
M0PWM4PE4
M0PWM5PE5
M1FAULT0PF4
M1PWM0PD0
M1PWM1PD1
M1PWM4PF0

Table 22-6. Possible Pin Assignments for Alternate Functions (continued)

# of Possible AssignmentsAlternate FunctionGPIO Function
M1PWM5PF1
M1PWM6PF2
M1PWM7PF3
PhA1PC5
PhB1PC6
SSI0ClkPA2
SSI0FssPA3
SSI0RxPA4
SSI0TxPA5
SSI2ClkPB4
SSI2FssPB5
SSI2RxPB6
SSI2TxPB7
SSI3ClkPD0
SSI3FssPD1
SSI3RxPD2
SSI3TxPD3
SWCLKPC0
SWDIOPC1
SWOPC3
T2CCP1PB1
T3CCP0PB2
T3CCP1PB3
T4CCP0PC0
T4CCP1PC1
T5CCP0PC2
T5CCP1PC3
TCKPC0
TDIPC2
TDOPC3
TMSPC1
TRCLKPF3
TRD0PF2
TRD1PF1
U0RxPA0
U0TxPA1
U2RxPD6
U2TxPD7
U3RxPC6
U3TxPC7
U4RxPC4

Table 22-6. Possible Pin Assignments for Alternate Functions (continued)

# of Possible AssignmentsAlternate FunctionGPIO Function
U4TxPC5
U5RxPE4
U5TxPE5
U6RxPD4
U6TxPD5
U7RxPE0
U7TxPE1
WT0CCP0PC4
WT0CCP1PC5
WT1CCP0PC6
WT1CCP1PC7
WT2CCP0PD0
WT2CCP1PD1
WT3CCP0PD2
WT3CCP1PD3
WT4CCP0PD4
WT4CCP1PD5
WT5CCP0PD6
WT5CCP1PD7
IDX0PD3 PF4
M0PWM6PC4 PD0
M0PWM7PC5 PD1
M1PWM2PA6 PE4
M1PWM3PA7 PE5
NMIPD7 PF0
PhA0PD6 PF0
PhB0PD7 PF1
SSI1ClkPD0 PF2
SSI1FssPD1 PF3
twoSSI1RxPD2 PF0
SSI1TxPD3 PF1
T0CCP0PB6 PF0
T0CCP1PB7 PF1
T1CCP0PB4 PF2
T1CCP1PB5 PF3
T2CCP0PB0 PF4
U1CTSPC5 PF1
U1RTSPC4 PF0
U1RxPB0 PC4
U1TxPB1 PC5

Table 22-6. Possible Pin Assignments for Alternate Functions (continued)

# of Possible AssignmentsAlternate FunctionGPIO Function
threeCAN0RxPB4 PE4 PF0
threeCAN0TxPB5 PE5 PF3
threeM0FAULT0PD2 PD6 PF2

Electrical Characteristics

ParameterParameter NameMinNomMaxUnit
POWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTS
V DDAADC supply voltage2.973.33.63V
GNDAADC ground voltage-0-V
VDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCE
C REFVoltage reference decoupling capacitance-1.0 // 0.01 c-μF
ANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUT
V ADCINSingle-ended, full- scale analog input voltage, internal reference de0-V DDAV
Differential, full-scale analog input voltage, internal reference df-V DDA-V DDAV
VIN CMInput commonmodevoltage, differentialmode g--(VREFP + VREFN) / 2 ± 25mV
I LADC input leakage current h--2.0μA
R ADCADC equivalent input resistance h--2.5
C ADCADC equivalent input capacitance h--10pF
R SAnalog source resistance h--500Ω
SAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICS
F ADCADC conversion clock frequency i-16-MHz
F CONVADC conversion rate1Msps
T SADC sample time-250-ns
T CADC conversion time j1μs
T LTLatency from trigger to start of conversion-2-ADC clocks
SYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal reference
NResolution12bits
INLIntegral nonlinearity error, over full input range-±1.5±3.0LSB
DNLDifferential nonlinearity error, over full input range-±0.8+2.0/-1.0 kLSB
E OOffset error-±5.0±15.0LSB
E GGain error l-±10.0±30.0LSB
E TTotal unadjusted error, over full input range m-±10.0±30.0LSB
DYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS no
SNR DSignal-to-noise-ratio, Differential input,V ADCIN : -20dB FS, 1KHz p7072-dB
SDR DSignal-to-distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pqr7275-dB
SNDR DSignal-to-Noise+Distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pst6870-dB
SNR SSignal-to-noise-ratio, Single-ended input, V ADCIN : -20dB FS, 1KHz u6065-dB

Table 23-32. ADC Electrical Characteristics (continued)

ParameterParameter NameMinNomMaxUnit
SDR SSignal-to-distortion ratio, Single-ended input, V ADCIN : -3dB FS, 1KHz qr7072-dB
SNDR SSignal-to-Noise+Distortion ratio, Single-ended input, V ADCIN : -3dB FS, 1KHz stu6063-dB
TEMPERATURE SENSORTEMPERATURE SENSOR
V TSENSTemperature sensor voltage, junction temperature 25 °C-1.633-V
S TSENSTemperature sensor slope--13.3-mV/°C
E TSENSTemperature sensor accuracy v--±5°C
  • a. V REF+ = 3.3V, F ADC =16 MHz unless otherwise noted.
  • b. Best design practices suggest that static or quiet digital I/O signals be configured adjacent to sensitive analog inputs to reduce capacitive coupling and cross talk. Analog signals configured adjacent to ADC input channels should meet the same source resistance and bandwidth limitations that apply to the ADC input signals.
  • c. Two capacitors in parallel.
  • d. Internal reference is connected directly between V DDA and GNDA (VREFi = V DDA - GNDA). In this mode, E O , E G , E T , and dynamic specifications are adversely affected due to internal voltage drop and noise on V DDA and GNDA.
  • e. V ADCIN = V INP - V INN
  • f. With signal common mode as V DDA /2.
  • g. This parameter is defined as the average of the differential inputs.
  • h. As shown in Figure 23-18 on page 1260, R ADC is the total equivalent resistance in the input line all the way up to the sampling node at the input of the ADC.
  • i. See 'System Clock Specification with ADC Operation' on page 1249 for full ADC clock frequency specification.
  • j. ADC conversion time (Tc) includes the ADC sample time (Ts).
  • k. 12-bit DNL
  • l. Gain error is measured at max code after compensating for offset. Gain error is equivalent to "Full Scale Error." It can be given in % of slope error, or in LSB, as done here.
  • m. Total Unadjusted Error is the maximum error at any one code versus the ideal ADC curve. It includes all other errors (offset error, gain error and INL) at any given ADC code.
  • n. A low-noise environment is assumed in order to obtain values close to spec. The board must have good ground isolation between analog and digital grounds and a clean reference voltage. The input signal must be band-limited to Nyquist bandwidth. No anti-aliasing filter is provided internally.
  • o. ADC dynamic characteristics are measured using low-noise board design, with low-noise reference voltage ( < -74dB noise level in signal BW) and low-noise analog supply voltage. Board noise and ground bouncing couple into the ADC and affect dynamic characteristics. Clean external reference must be used to achieve shown specs.
  • p. Differential signal with correct common mode, applied between two ADC inputs.
  • q. SDR = -THD in dB.
  • r. For higher frequency inputs, degradation in SDR should be expected.
  • s. SNDR = S/(N+D) = SINAD (in dB)
  • t. Effective number of bits (ENOB) can be calculated from SNDR: ENOB = (SNDR - 1.76) / 6.02.
  • u. Single-ended inputs are more sensitive to board and trace noise than differential inputs; SNR and SNDR measurements on single-ended inputs are highly dependent on how clean the test set-up is. If the input signal is not well-isolated on the board, higher noise than specified could potentially be seen at the ADC output.
  • v. Note that this parameter does not include ADC error.

Figure 23-18. ADC Input Equivalency Diagram

Absolute Maximum Ratings

The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Device reliability may be adversely affected by exposure to absolute-maximum ratings for extended periods.

Note: The device is not guaranteed to operate properly at the maximum ratings.

Table 23-1. Absolute Maximum Ratings

ParameterParameter Name aValueValueUnit
ParameterParameter Name aMinMaxUnit
V DDV DD supply voltage04V
V DDAV DDA supply voltage b04V
V BATV BAT battery supply voltage04V
V BATRMPV BAT battery supply voltage ramp time00.7V/μs
V IN_GPIOInput voltage on GPIOs, regardless of whether the microcontroller is powered cde-0.35.5V
V IN_GPIOInput voltage for PD4 , PD5 , PB0 and PB1 when configured as GPIO-0.3V DD + 0.3V
I GPIOMAXMaximum current per output pin-25mA
T SUnpowered storage temperature range-65150°C
T JMAXMaximum junction temperature-150°C

Important: This device contains circuitry to protect the I/Os against damage due to high-static voltages; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (see 'Connections for Unused Signals' on page 1226).

Table 23-2. ESD Absolute Maximum Ratings

ParameterMinNomMaxUnit
Component-Level ESD aV ESDHBM b--2kV
Stress VoltageV ESDCDM c--500V

Recommended Operating Conditions

For special high-current applications, the GPIO output buffers may be used with the following restrictions. With the GPIO pins configured as 8-mA output drivers, a total of four GPIO outputs may be used to sink current loads up to 18 mA each. At 18-mA sink current loading, the V OL value is specified as 1.2 V. The high-current GPIO package pins must be selected such that there are only a maximum of two per side of the physical package with the total number of high-current GPIO outputs not exceeding four for the entire package.

Table 23-5. Recommended DC Operating Conditions

ParameterParameter NameMinNomMaxUnit
V DDV DD supply voltage3.153.33.63V
V DDAV DDA supply voltage2.973.33.63V
V DDCV DDC supply voltage1.081.21.32V
V DDCDS abV DDC supply voltage, Deep-sleepmode1.08-1.32V

a. These values are valid when LDO is in operation.

b. There are peripheral timing restrictions for SSI and LPC in Deep-sleep mode. Please refer to those peripheral characteristic sections for more information.

Table 23-6. Recommended GPIO Pad Operating Conditions

ParameterParameter NameMinNomMaxUnit
V IHGPIO high-level input voltage0.65 * V DD-5.5V
V ILGPIO low-level input voltage0-0.35 * V DDV
V HYSGPIO input hysteresis0.2--V
V OHGPIO high-level output voltage2.4--V
V OLGPIO low-level output voltage--0.4V
I OHHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V a
I OH2-mA Drive2.0--mA
I OH4-mA Drive4.0--mA
I OH8-mA Drive8.0--mA
I OLLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V a
I OL2-mA Drive2.0--mA
I OL4-mA Drive4.0--mA
I OL8-mA Drive8.0--mA
I OL8-mA Drive, V OL =1.2 V18.0--mA

a. I O specifications reflect the maximum current where the corresponding output voltage meets the V OH /V OL thresholds. I O current can exceed these limits (subject to absolute maximum ratings).

Table 23-7. GPIO Current Restrictions a

ParameterParameter NameMinNomMaxUnit
I MAXLCumulative maximum GPIO current per side, left b--30mA
I MAXBCumulative maximumGPIOcurrent per side, bottom b--35mA
I MAXRCumulative maximum GPIO current per side, right b--40mA
I MAXTCumulative maximum GPIO current per side, top b--40mA

a. Based on design simulations, not tested in production.

b. Sum of sink and source current for GPIOs as shown in Table 23-8 on page 1230.

Table 23-8. GPIO Package Side Assignments

SideGPIOs
LeftPB[6-7], PC[4-7], PD7, PE[0-3], PF4
BottomPA[0-7], PF[0-3]
RightPB[0-3], PD[4-5]
TopPB[4-5], PC[0-3], PD[0-3,6], PE[4-5]

Thermal Information

CharacteristicSymbolValueUnit
Thermal resistance (junction to ambient) bΘ JA54.8°C/W
Thermal resistance (junction to board) bΘ JB27.5°C/W
Thermal resistance (junction to case) bΘ JC15.8°C/W
Thermal metric (junction to top of package)Ψ JT0.7°C/W
Thermal metric (junction to board)Ψ JB27.1°C/W
Junction temperature formulaT JT C + (P • Ψ JT ) T PCB + (P • Ψ JB ) c T A + (P • Θ JA ) d T B + (P • Θ JB ) ef°C

Package Information

MTQF008A - JANUARY 1995 - REVISED DECEMBER 1996

NOTES: A. All linear dimensions are in millimeters.

  • B. This drawing is subject to change without notice.
  • C. Falls within JEDEC MS-026
  • D. May also be thermally enhanced plastic with leads connected to the die pads.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
TM4C123BH6PMTexas Instruments
TM4C123BH6PMITexas Instruments
TM4C123BH6PMI7Texas Instruments
TM4C123BH6PMIRTexas Instruments
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free