TM4C123BH6PMI
ARM Cortex-M4F MicrocontrollerThe TM4C123BH6PMI is a arm cortex-m4f microcontroller from Texas Instruments. View the full TM4C123BH6PMI datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
ARM Cortex-M4F Microcontroller
Key Specifications
| Parameter | Value |
|---|---|
| Packaging | Tray |
| Standard Pack Qty | 160 |
Overview
Part: Tiva ™ TM4C123BH6PM Microcontroller — Texas Instruments
Type: ARM Cortex-M4F Microcontroller
Description: 32-bit ARM Cortex-M4F processor core operating at up to 80 MHz, featuring on-chip Flash, SRAM, and EEPROM memory, serial communications, advanced motion control, and analog peripherals.
Operating Conditions:
- Operating temperature: -40 to 85 °C
- Max clock frequency: 80 MHz
Features:
- ARM Cortex-M4F Processor Core
- On-Chip Memory
- Serial Communications Peripherals
- System Integration
- Advanced Motion Control
- Analog Peripherals
- JTAG and ARM Serial Wire Debug
- Hibernation Module
- Micro Direct Memory Access (μDMA)
Features
The TM4C123BH6PM microcontroller component features and general function are discussed in more detail in the following section.
Pin Configuration
Table 22-6. Possible Pin Assignments for Alternate Functions
| # of Possible Assignments | Alternate Function | GPIO Function |
|---|---|---|
| one | AIN0 | PE3 |
| AIN1 | PE2 | |
| AIN10 | PB4 | |
| AIN11 | PB5 | |
| AIN2 | PE1 | |
| AIN3 | PE0 | |
| AIN4 | PD3 | |
| AIN5 | PD2 | |
| AIN6 | PD1 | |
| AIN7 | PD0 | |
| AIN8 | PE5 | |
| AIN9 | PE4 | |
| C0+ | PC6 | |
| C0- | PC7 | |
| C0o | PF0 | |
| C1+ | PC5 | |
| C1- | PC4 | |
| C1o | PF1 | |
| CAN1Rx | PA0 | |
| CAN1Tx | PA1 | |
| I2C0SCL | PB2 | |
| I2C0SDA | PB3 | |
| I2C1SCL | PA6 | |
| I2C1SDA | PA7 | |
| I2C2SCL | PE4 | |
| I2C2SDA | PE5 | |
| I2C3SCL | PD0 | |
| I2C3SDA | PD1 | |
| IDX1 | PC4 | |
| M0PWM0 | PB6 | |
| M0PWM1 | PB7 | |
| M0PWM2 | PB4 | |
| M0PWM3 | PB5 | |
| M0PWM4 | PE4 | |
| M0PWM5 | PE5 | |
| M1FAULT0 | PF4 | |
| M1PWM0 | PD0 | |
| M1PWM1 | PD1 | |
| M1PWM4 | PF0 |
Table 22-6. Possible Pin Assignments for Alternate Functions (continued)
| # of Possible Assignments | Alternate Function | GPIO Function |
|---|---|---|
| M1PWM5 | PF1 | |
| M1PWM6 | PF2 | |
| M1PWM7 | PF3 | |
| PhA1 | PC5 | |
| PhB1 | PC6 | |
| SSI0Clk | PA2 | |
| SSI0Fss | PA3 | |
| SSI0Rx | PA4 | |
| SSI0Tx | PA5 | |
| SSI2Clk | PB4 | |
| SSI2Fss | PB5 | |
| SSI2Rx | PB6 | |
| SSI2Tx | PB7 | |
| SSI3Clk | PD0 | |
| SSI3Fss | PD1 | |
| SSI3Rx | PD2 | |
| SSI3Tx | PD3 | |
| SWCLK | PC0 | |
| SWDIO | PC1 | |
| SWO | PC3 | |
| T2CCP1 | PB1 | |
| T3CCP0 | PB2 | |
| T3CCP1 | PB3 | |
| T4CCP0 | PC0 | |
| T4CCP1 | PC1 | |
| T5CCP0 | PC2 | |
| T5CCP1 | PC3 | |
| TCK | PC0 | |
| TDI | PC2 | |
| TDO | PC3 | |
| TMS | PC1 | |
| TRCLK | PF3 | |
| TRD0 | PF2 | |
| TRD1 | PF1 | |
| U0Rx | PA0 | |
| U0Tx | PA1 | |
| U2Rx | PD6 | |
| U2Tx | PD7 | |
| U3Rx | PC6 | |
| U3Tx | PC7 | |
| U4Rx | PC4 |
Table 22-6. Possible Pin Assignments for Alternate Functions (continued)
| # of Possible Assignments | Alternate Function | GPIO Function |
|---|---|---|
| U4Tx | PC5 | |
| U5Rx | PE4 | |
| U5Tx | PE5 | |
| U6Rx | PD4 | |
| U6Tx | PD5 | |
| U7Rx | PE0 | |
| U7Tx | PE1 | |
| WT0CCP0 | PC4 | |
| WT0CCP1 | PC5 | |
| WT1CCP0 | PC6 | |
| WT1CCP1 | PC7 | |
| WT2CCP0 | PD0 | |
| WT2CCP1 | PD1 | |
| WT3CCP0 | PD2 | |
| WT3CCP1 | PD3 | |
| WT4CCP0 | PD4 | |
| WT4CCP1 | PD5 | |
| WT5CCP0 | PD6 | |
| WT5CCP1 | PD7 | |
| IDX0 | PD3 PF4 | |
| M0PWM6 | PC4 PD0 | |
| M0PWM7 | PC5 PD1 | |
| M1PWM2 | PA6 PE4 | |
| M1PWM3 | PA7 PE5 | |
| NMI | PD7 PF0 | |
| PhA0 | PD6 PF0 | |
| PhB0 | PD7 PF1 | |
| SSI1Clk | PD0 PF2 | |
| SSI1Fss | PD1 PF3 | |
| two | SSI1Rx | PD2 PF0 |
| SSI1Tx | PD3 PF1 | |
| T0CCP0 | PB6 PF0 | |
| T0CCP1 | PB7 PF1 | |
| T1CCP0 | PB4 PF2 | |
| T1CCP1 | PB5 PF3 | |
| T2CCP0 | PB0 PF4 | |
| U1CTS | PC5 PF1 | |
| U1RTS | PC4 PF0 | |
| U1Rx | PB0 PC4 | |
| U1Tx | PB1 PC5 |
Table 22-6. Possible Pin Assignments for Alternate Functions (continued)
| # of Possible Assignments | Alternate Function | GPIO Function |
|---|---|---|
| three | CAN0Rx | PB4 PE4 PF0 |
| three | CAN0Tx | PB5 PE5 PF3 |
| three | M0FAULT0 | PD2 PD6 PF2 |
Electrical Characteristics
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS |
| V DDA | ADC supply voltage | 2.97 | 3.3 | 3.63 | V |
| GNDA | ADC ground voltage | - | 0 | - | V |
| VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE |
| C REF | Voltage reference decoupling capacitance | - | 1.0 // 0.01 c | - | μF |
| ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT |
| V ADCIN | Single-ended, full- scale analog input voltage, internal reference de | 0 | - | V DDA | V |
| Differential, full-scale analog input voltage, internal reference df | -V DDA | - | V DDA | V | |
| VIN CM | Input commonmodevoltage, differentialmode g | - | - | (VREFP + VREFN) / 2 ± 25 | mV |
| I L | ADC input leakage current h | - | - | 2.0 | μA |
| R ADC | ADC equivalent input resistance h | - | - | 2.5 | kΩ |
| C ADC | ADC equivalent input capacitance h | - | - | 10 | pF |
| R S | Analog source resistance h | - | - | 500 | Ω |
| SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS |
| F ADC | ADC conversion clock frequency i | - | 16 | - | MHz |
| F CONV | ADC conversion rate | 1 | Msps | ||
| T S | ADC sample time | - | 250 | - | ns |
| T C | ADC conversion time j | 1 | μs | ||
| T LT | Latency from trigger to start of conversion | - | 2 | - | ADC clocks |
| SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference |
| N | Resolution | 12 | bits | ||
| INL | Integral nonlinearity error, over full input range | - | ±1.5 | ±3.0 | LSB |
| DNL | Differential nonlinearity error, over full input range | - | ±0.8 | +2.0/-1.0 k | LSB |
| E O | Offset error | - | ±5.0 | ±15.0 | LSB |
| E G | Gain error l | - | ±10.0 | ±30.0 | LSB |
| E T | Total unadjusted error, over full input range m | - | ±10.0 | ±30.0 | LSB |
| DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no |
| SNR D | Signal-to-noise-ratio, Differential input,V ADCIN : -20dB FS, 1KHz p | 70 | 72 | - | dB |
| SDR D | Signal-to-distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pqr | 72 | 75 | - | dB |
| SNDR D | Signal-to-Noise+Distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pst | 68 | 70 | - | dB |
| SNR S | Signal-to-noise-ratio, Single-ended input, V ADCIN : -20dB FS, 1KHz u | 60 | 65 | - | dB |
Table 23-32. ADC Electrical Characteristics (continued)
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| SDR S | Signal-to-distortion ratio, Single-ended input, V ADCIN : -3dB FS, 1KHz qr | 70 | 72 | - | dB |
| SNDR S | Signal-to-Noise+Distortion ratio, Single-ended input, V ADCIN : -3dB FS, 1KHz stu | 60 | 63 | - | dB |
| TEMPERATURE SENSOR | TEMPERATURE SENSOR | ||||
| V TSENS | Temperature sensor voltage, junction temperature 25 °C | - | 1.633 | - | V |
| S TSENS | Temperature sensor slope | - | -13.3 | - | mV/°C |
| E TSENS | Temperature sensor accuracy v | - | - | ±5 | °C |
- a. V REF+ = 3.3V, F ADC =16 MHz unless otherwise noted.
- b. Best design practices suggest that static or quiet digital I/O signals be configured adjacent to sensitive analog inputs to reduce capacitive coupling and cross talk. Analog signals configured adjacent to ADC input channels should meet the same source resistance and bandwidth limitations that apply to the ADC input signals.
- c. Two capacitors in parallel.
- d. Internal reference is connected directly between V DDA and GNDA (VREFi = V DDA - GNDA). In this mode, E O , E G , E T , and dynamic specifications are adversely affected due to internal voltage drop and noise on V DDA and GNDA.
- e. V ADCIN = V INP - V INN
- f. With signal common mode as V DDA /2.
- g. This parameter is defined as the average of the differential inputs.
- h. As shown in Figure 23-18 on page 1260, R ADC is the total equivalent resistance in the input line all the way up to the sampling node at the input of the ADC.
- i. See 'System Clock Specification with ADC Operation' on page 1249 for full ADC clock frequency specification.
- j. ADC conversion time (Tc) includes the ADC sample time (Ts).
- k. 12-bit DNL
- l. Gain error is measured at max code after compensating for offset. Gain error is equivalent to "Full Scale Error." It can be given in % of slope error, or in LSB, as done here.
- m. Total Unadjusted Error is the maximum error at any one code versus the ideal ADC curve. It includes all other errors (offset error, gain error and INL) at any given ADC code.
- n. A low-noise environment is assumed in order to obtain values close to spec. The board must have good ground isolation between analog and digital grounds and a clean reference voltage. The input signal must be band-limited to Nyquist bandwidth. No anti-aliasing filter is provided internally.
- o. ADC dynamic characteristics are measured using low-noise board design, with low-noise reference voltage ( < -74dB noise level in signal BW) and low-noise analog supply voltage. Board noise and ground bouncing couple into the ADC and affect dynamic characteristics. Clean external reference must be used to achieve shown specs.
- p. Differential signal with correct common mode, applied between two ADC inputs.
- q. SDR = -THD in dB.
- r. For higher frequency inputs, degradation in SDR should be expected.
- s. SNDR = S/(N+D) = SINAD (in dB)
- t. Effective number of bits (ENOB) can be calculated from SNDR: ENOB = (SNDR - 1.76) / 6.02.
- u. Single-ended inputs are more sensitive to board and trace noise than differential inputs; SNR and SNDR measurements on single-ended inputs are highly dependent on how clean the test set-up is. If the input signal is not well-isolated on the board, higher noise than specified could potentially be seen at the ADC output.
- v. Note that this parameter does not include ADC error.
Figure 23-18. ADC Input Equivalency Diagram
Absolute Maximum Ratings
The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Device reliability may be adversely affected by exposure to absolute-maximum ratings for extended periods.
Note: The device is not guaranteed to operate properly at the maximum ratings.
Table 23-1. Absolute Maximum Ratings
| Parameter | Parameter Name a | Value | Value | Unit |
|---|---|---|---|---|
| Parameter | Parameter Name a | Min | Max | Unit |
| V DD | V DD supply voltage | 0 | 4 | V |
| V DDA | V DDA supply voltage b | 0 | 4 | V |
| V BAT | V BAT battery supply voltage | 0 | 4 | V |
| V BATRMP | V BAT battery supply voltage ramp time | 0 | 0.7 | V/μs |
| V IN_GPIO | Input voltage on GPIOs, regardless of whether the microcontroller is powered cde | -0.3 | 5.5 | V |
| V IN_GPIO | Input voltage for PD4 , PD5 , PB0 and PB1 when configured as GPIO | -0.3 | V DD + 0.3 | V |
| I GPIOMAX | Maximum current per output pin | - | 25 | mA |
| T S | Unpowered storage temperature range | -65 | 150 | °C |
| T JMAX | Maximum junction temperature | - | 150 | °C |
Important: This device contains circuitry to protect the I/Os against damage due to high-static voltages; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (see 'Connections for Unused Signals' on page 1226).
Table 23-2. ESD Absolute Maximum Ratings
| Parameter | Min | Nom | Max | Unit | |
|---|---|---|---|---|---|
| Component-Level ESD a | V ESDHBM b | - | - | 2 | kV |
| Stress Voltage | V ESDCDM c | - | - | 500 | V |
Recommended Operating Conditions
For special high-current applications, the GPIO output buffers may be used with the following restrictions. With the GPIO pins configured as 8-mA output drivers, a total of four GPIO outputs may be used to sink current loads up to 18 mA each. At 18-mA sink current loading, the V OL value is specified as 1.2 V. The high-current GPIO package pins must be selected such that there are only a maximum of two per side of the physical package with the total number of high-current GPIO outputs not exceeding four for the entire package.
Table 23-5. Recommended DC Operating Conditions
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| V DD | V DD supply voltage | 3.15 | 3.3 | 3.63 | V |
| V DDA | V DDA supply voltage | 2.97 | 3.3 | 3.63 | V |
| V DDC | V DDC supply voltage | 1.08 | 1.2 | 1.32 | V |
| V DDCDS ab | V DDC supply voltage, Deep-sleepmode | 1.08 | - | 1.32 | V |
a. These values are valid when LDO is in operation.
b. There are peripheral timing restrictions for SSI and LPC in Deep-sleep mode. Please refer to those peripheral characteristic sections for more information.
Table 23-6. Recommended GPIO Pad Operating Conditions
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| V IH | GPIO high-level input voltage | 0.65 * V DD | - | 5.5 | V |
| V IL | GPIO low-level input voltage | 0 | - | 0.35 * V DD | V |
| V HYS | GPIO input hysteresis | 0.2 | - | - | V |
| V OH | GPIO high-level output voltage | 2.4 | - | - | V |
| V OL | GPIO low-level output voltage | - | - | 0.4 | V |
| I OH | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a |
| I OH | 2-mA Drive | 2.0 | - | - | mA |
| I OH | 4-mA Drive | 4.0 | - | - | mA |
| I OH | 8-mA Drive | 8.0 | - | - | mA |
| I OL | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a |
| I OL | 2-mA Drive | 2.0 | - | - | mA |
| I OL | 4-mA Drive | 4.0 | - | - | mA |
| I OL | 8-mA Drive | 8.0 | - | - | mA |
| I OL | 8-mA Drive, V OL =1.2 V | 18.0 | - | - | mA |
a. I O specifications reflect the maximum current where the corresponding output voltage meets the V OH /V OL thresholds. I O current can exceed these limits (subject to absolute maximum ratings).
Table 23-7. GPIO Current Restrictions a
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| I MAXL | Cumulative maximum GPIO current per side, left b | - | - | 30 | mA |
| I MAXB | Cumulative maximumGPIOcurrent per side, bottom b | - | - | 35 | mA |
| I MAXR | Cumulative maximum GPIO current per side, right b | - | - | 40 | mA |
| I MAXT | Cumulative maximum GPIO current per side, top b | - | - | 40 | mA |
a. Based on design simulations, not tested in production.
b. Sum of sink and source current for GPIOs as shown in Table 23-8 on page 1230.
Table 23-8. GPIO Package Side Assignments
| Side | GPIOs |
|---|---|
| Left | PB[6-7], PC[4-7], PD7, PE[0-3], PF4 |
| Bottom | PA[0-7], PF[0-3] |
| Right | PB[0-3], PD[4-5] |
| Top | PB[4-5], PC[0-3], PD[0-3,6], PE[4-5] |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Thermal resistance (junction to ambient) b | Θ JA | 54.8 | °C/W |
| Thermal resistance (junction to board) b | Θ JB | 27.5 | °C/W |
| Thermal resistance (junction to case) b | Θ JC | 15.8 | °C/W |
| Thermal metric (junction to top of package) | Ψ JT | 0.7 | °C/W |
| Thermal metric (junction to board) | Ψ JB | 27.1 | °C/W |
| Junction temperature formula | T J | T C + (P • Ψ JT ) T PCB + (P • Ψ JB ) c T A + (P • Θ JA ) d T B + (P • Θ JB ) ef | °C |
Package Information
MTQF008A - JANUARY 1995 - REVISED DECEMBER 1996
NOTES: A. All linear dimensions are in millimeters.
- B. This drawing is subject to change without notice.
- C. Falls within JEDEC MS-026
- D. May also be thermally enhanced plastic with leads connected to the die pads.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TM4C123BH6PM | Texas Instruments | — |
| TM4C123BH6PMI7 | Texas Instruments | — |
| TM4C123BH6PMI7R | Texas Instruments | — |
| TM4C123BH6PMIR | Texas Instruments | — |
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