TLP185(SE

TLP185(SE

Manufacturer

Toshiba

Category

Transistor Output Optocouplers

Overview

Part: TLP185(SE

Type: Photocoupler

Key Specs:

  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min)
  • Isolation voltage: 3750 Vrms (min)
  • Operating temperature: -55 to 110 °C
  • Input forward current: 50 mA (max)
  • Collector current: 50 mA (max)

Features:

  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min)
  • Isolation voltage: 3750 Vrms (min)
  • Operating temperature: -55 to 110 °C
  • UL-approved: UL1577, File No.E67349
  • cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
  • VDE-approved: EN60747-5-5
  • CQC-approved: GB4943.1, GB8898
  • Housed in SO6 package
  • Suitable for high-density surface mounting

Applications:

  • Office Equipment
  • Programmable Logic Controllers (PLCs)
  • AC Adapters
  • I/O Interface Boards

Package:

  • SO6 package

Features

(1) Collector-emitter voltage: 80 V (min)

(2) Current transfer ratio: 50% (min)

Rank GB: 100% (min)

(3) Isolation voltage: 3750 Vrms (min)

(4) Operating temperature: -55 to 110

(5) Safety standards

UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

VDE-approved: EN60747-5-5 (Note 1)

CQC-approved: GB4943.1, GB8898 Thailand Factory

Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4).

Applications

  • Office Equipment
  • Programmable Logic Controllers (PLCs)
  • AC Adapters
  • I/O Interface Boards

Pin Configuration

Start of commercial production

5. Principle of Operation

5.1. Mechanical Parameters

CharacteristicsMinUnit
Creepage distances5.0mm
Clearance5.0
Internal isolation thickness0.4

6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 )

CharacteristicsSymbolNoteRatingUnit
LEDInput forward currentIF50mA
Input forward current derating
(T
≥ 90
)
a
∆IF/∆Ta-1.5
mA/
Input forward current (pulsed)IFP(Note 1)1A
Input reverse voltageVR5V
Input power dissipationPD100mW
Input power dissipation
derating

(T
≥ 90
)
a
∆PD/∆Ta-2.86
mW/
Junction temperatureTj125
DetectorCollector-emitter voltageVCEO80V
Emitter-collector voltageVECO7V
Collector currentIC50mA
Collector power dissipationPC150mW
Collector power dissipation
derating

(T
≥ 25
)
a
∆PC/∆Ta-1.5
mW/
Junction temperatureTj125
CommonOperating temperatureTopr-55 to 110
Storage temperatureTstg-55 to 125
Lead soldering temperature(10 s)Tsol260
Total power dissipationPT200mW
Isolation voltageAC, 60 s, R.H.
≤ 60%
BV
S
(Note 2)3750Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 100 μs, f = 100 Hz

Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.

7. Electrical Characteristics (Unless otherwise specified, T a = 25 )

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
LEDInput forward voltageVFIF = 10 mA1.11.251.4V
Input reverse currentIRVR = 5 V5μA
Input capacitanceCtV = 0 V, f = 1 MHz30pF
DetectorCollector-emitter breakdown
voltage
V(BR)CEOIC = 0.5 mA80V
Emitter-collector breakdown
voltage
V(BR)ECOIE = 0.1 mA7
Dark CurrentIDARKVCE = 48 V0.010.08μA

VCE = 48 V, Ta = 85
250
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz10pF

8. Coupled Electrical Characteristics (Unless otherwise specified, T a = 25 )

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
Current transfer ratioIC/IF(Note 1)IF = 5 mA, VCE = 5 V50600%
IF = 5 mA, VCE = 5 V, Rank GB100600
Saturated current transfer ratioIC/IF(sat)IF = 1 mA, VCE = 0.4 V60
IF = 1 mA, VCE = 0.4 V, Rank GB30
Collector-emitter saturationVCE(sat)IC = 2.4 mA, IF = 8 mA0.3V
voltageIC = 0.2 mA, IF = 1 mA0.2
IC = 0.2 mA, IF = 1 mA, Rank GB0.3
OFF-state collector currentIC(off)VF = 0.7 V, VCE = 48 V110μA

Note 1: See Table 8.1 for current transfer ratio.

Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T a = 25 )

RankTest ConditionCurrent
transfer ratio
IC/IF
Min
Current
transfer ratio
IC/IF
Max
Marking of
Classification
Unit
BlankIF = 5 mA, VCE = 5 V50600Blank, YE, GR, GB,
BL, Y+, G, G+, B
%
Y50150YE
GR100300GR
GB100600GB
BL200600BL
YH75150Y+
GRL100200G
GRH150300G+
BLL200400B

Example: TLP185(GB,SE

For safety standard certification, however, specify the part number alone.

Example: TLP185(GB,SE: TLP185

9. Isolation Characteristics (Unless otherwise specified, T a = 25 )

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
Total capacitance (input to
output)
CS(Note 1)V
S = 0 V, f = 1 MHz
0.8pF
Isolation resistanceRS(Note 1)V
S = 500 V, R.H.
≤ 60%
1
× 1012
1014Ω
Isolation voltageBV
S
(Note 1)AC, 60 s3750Vrms
AC, 1 s in oil10000
DC, 60 s in oil10000Vdc

Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.

10. Switching Characteristics (Unless otherwise specified,T a = 25 )

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
Rise timetrVCC = 10 V, IC = 2 mA,2μs
Fall timetfRL = 100 Ω3
Turn-on timeton3
Turn-off timetoff3
Turn-on timetonSee Fig. 10.10.5
Storage timetsVCC = 5 V, IF = 16 mA,25
Turn-off timetoffRL = 1.9 kΩ40

Fig. 10.1 Switching Time Test Circuit and Waveform

Electrical Characteristics

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
LEDInput forward voltageVFIF = 10 mA1.11.251.4V
Input reverse currentIRVR = 5 V5μA
Input capacitanceCtV = 0 V, f = 1 MHz30pF
DetectorCollector-emitter breakdown
voltage
V(BR)CEOIC = 0.5 mA80V
Emitter-collector breakdown
voltage
V(BR)ECOIE = 0.1 mA7
Dark CurrentIDARKVCE = 48 V0.010.08μA

VCE = 48 V, Ta = 85
250
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz10pF

Absolute Maximum Ratings

CharacteristicsSymbolNoteRatingUnit
LEDInput forward currentIF50mA
Input forward current derating
(T
≥ 90
)
a
∆IF/∆Ta-1.5
mA/
Input forward current (pulsed)IFP(Note 1)1A
Input reverse voltageVR5V
Input power dissipationPD100mW
Input power dissipation
derating

(T
≥ 90
)
a
∆PD/∆Ta-2.86
mW/
Junction temperatureTj125
DetectorCollector-emitter voltageVCEO80V
Emitter-collector voltageVECO7V
Collector currentIC50mA
Collector power dissipationPC150mW
Collector power dissipation
derating

(T
≥ 25
)
a
∆PC/∆Ta-1.5
mW/
Junction temperatureTj125
CommonOperating temperatureTopr-55 to 110
Storage temperatureTstg-55 to 125
Lead soldering temperature(10 s)Tsol260
Total power dissipationPT200mW
Isolation voltageAC, 60 s, R.H.
≤ 60%
BV
S
(Note 2)3750Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 100 μs, f = 100 Hz

Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
TLP185Toshiba
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