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TLP185

Photocoupler

The TLP185 is a photocoupler from Toshiba. View the full TLP185 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Toshiba

Category

Optocouplers

Overview

Part: TLP185(SE — Toshiba

Type: Photocoupler (GaAs Infrared LED & Photo Transistor)

Description: Optically coupled photocoupler consisting of a gallium arsenide infrared emitting diode and a photo transistor, offering 80 V minimum collector-emitter voltage, 50% minimum current transfer ratio, and 3750 Vrms minimum isolation voltage, housed in a very small and thin SO6 package.

Operating Conditions:

  • Operating temperature: -55 to 110 °C
  • Collector-emitter voltage: 80 V (min)
  • Isolation voltage: 3750 Vrms (min)

Absolute Maximum Ratings:

  • Max LED input forward current: 50 mA
  • Max LED input reverse voltage: 5 V
  • Max detector collector-emitter voltage: 80 V
  • Max detector collector current: 50 mA
  • Max junction temperature: 125 °C
  • Max storage temperature: -55 to 125 °C
  • Max isolation voltage: 3750 Vrms (AC, 60 s)

Key Specs:

  • LED Input forward voltage (V_F): 1.1 V (min), 1.25 V (typ), 1.4 V (max) at I_F = 10 mA
  • LED Input reverse current (I_R): 5 μA (max) at V_R = 5 V
  • Detector Collector-emitter breakdown voltage (V_(BR)CEO): 80 V (min) at I_C = 0.5 mA
  • Detector Dark Current (I_DARK): 0.08 μA (max) at V_CE = 48 V, Ta = 25 °C
  • Current transfer ratio (I_C/I_F): 50% (min) at I_F = 5 mA, V_CE = 5 V
  • Collector-emitter saturation voltage (V_CE(sat)): 0.3 V (max) at I_C = 2.4 mA, I_F = 8 mA
  • Rise time (t_r): 2 μs (typ) at V_CC = 10 V, I_C = 2 mA, R_L = 100 Ω
  • Fall time (t_f): 3 μs (typ) at V_CC = 10 V, I_C = 2 mA, R_L = 100 Ω

Features:

  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min)
  • Isolation voltage: 3750 Vrms (min)
  • Operating temperature: -55 to 110 °C
  • UL-approved: UL1577, File No.E67349
  • cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
  • VDE-approved: EN60747-5-5
  • CQC-approved: GB4943.1, GB8898

Applications:

  • Office Equipment
  • Programmable Logic Controllers (PLCs)
  • AC Adapters
  • I/O Interface Boards

Package:

  • SO6 (Weight: 0.08 g typ.)

Features

  • (1) Collector-emitter voltage: 80 V (min)
  • (2) Current transfer ratio: 50% (min)
  1. Rank GB: 100% (min)
  • (3) Isolation voltage: 3750 Vrms (min)
  • (4) Operating temperature: -55 to 110
  • (5) Safety standards

UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

VDE-approved: EN60747-5-5 (Note 1)

CQC-approved: GB4943.1, GB8898 Thailand Factory

Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4).

Applications

  • Office Equipment
  • Programmable Logic Controllers (PLCs)
  • AC Adapters
  • I/O Interface Boards

Pin Configuration

Electrical Characteristics

CharacteristicsSymbolNoteTest ConditionMinTyp.MaxUnit
LEDInput forward voltageV FI F = 10 mA1.11.251.4V
LEDInput reverse currentI RV R = 5 V5μ A
LEDInput capacitanceC tV = 0 V, f = 1 MHz30pF
DetectorCollector-emitter breakdown voltageV (BR)CEOI C = 0.5 mA80V
DetectorEmitter-collector breakdown voltageV (BR)ECOI E = 0.1 mA7
DetectorDark CurrentI DARKV CE = 48 V0.010.08μ A
DetectorI DARKV CE = 48 V, T a = 85250μ A
DetectorCollector-emitter capacitanceC CEV = 0 V, f = 1 MHz10pF

Absolute Maximum Ratings

CharacteristicsCharacteristicsSymbolNoteRatingUnit
LEDInput forward currentInput forward currentI F50mA
LEDInput forward current derating(T a ≥ 90 )∆ I F / ∆ T a-1.5mA/
LEDInput forward current (pulsed)I FP(Note 1)1A
LEDInput reverse voltageV R5V
LEDInput power dissipationP D100mW
LEDInput power dissipation derating(T a ≥ 90 )∆ P D / ∆ T a-2.86mW/
LEDJunction temperatureT j125
DetectorCollector-emitter voltageV CEO80V
DetectorEmitter-collector voltageV ECO7V
DetectorCollector currentI C50mA
DetectorCollector power dissipationP C150mW
DetectorCollector power dissipation derating(T a ≥ 25 )∆ P C / ∆ T a-1.5mW/
DetectorJunction temperatureT j125
CommonOperating temperatureT opr-55 to 110
CommonStorage temperatureT stg-55 to 125
CommonLead soldering temperature(10 s)T sol260
CommonTotal power dissipationP T200mW
CommonIsolation voltageAC, 60 s, R.H. ≤ 60%BV S(Note 2)3750Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 100 μ s, f = 100 Hz

Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.

Package Information

Weight: 0.08 g (typ.)

Weight: 0.08 g (typ.)

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