TLP185
TLP185(SE
Manufacturer
Toshiba
Category
Transistor Output Optocouplers
Overview
Part: TLP185(SE
Type: Photocoupler
Key Specs:
- Collector-emitter voltage: 80 V (min)
- Current transfer ratio: 50% (min)
- Isolation voltage: 3750 Vrms (min)
- Operating temperature: -55 to 110 °C
- Input forward current: 50 mA (max)
- Collector current: 50 mA (max)
Features:
- Collector-emitter voltage: 80 V (min)
- Current transfer ratio: 50% (min)
- Isolation voltage: 3750 Vrms (min)
- Operating temperature: -55 to 110 °C
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
- CQC-approved: GB4943.1, GB8898
- Housed in SO6 package
- Suitable for high-density surface mounting
Applications:
- Office Equipment
- Programmable Logic Controllers (PLCs)
- AC Adapters
- I/O Interface Boards
Package:
- SO6 package
Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50% (min)
Rank GB: 100% (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4).
Applications
- Office Equipment
- Programmable Logic Controllers (PLCs)
- AC Adapters
- I/O Interface Boards
Pin Configuration
Start of commercial production
5. Principle of Operation
5.1. Mechanical Parameters
| Characteristics | Min | Unit |
|---|---|---|
| Creepage distances | 5.0 | mm |
| Clearance | 5.0 | |
| Internal isolation thickness | 0.4 |
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 )
| Characteristics | Symbol | Note | Rating | Unit | ||
|---|---|---|---|---|---|---|
| LED | Input forward current | IF | 50 | mA | ||
| Input forward current derating | (T ≥ 90 ) a | ∆IF/∆Ta | -1.5 | mA/ | ||
| Input forward current (pulsed) | IFP | (Note 1) | 1 | A | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 100 | mW | |||
| Input power dissipation derating | (T ≥ 90 ) a | ∆PD/∆Ta | -2.86 | mW/ | ||
| Junction temperature | Tj | 125 | | |||
| Detector | Collector-emitter voltage | VCEO | 80 | V | ||
| Emitter-collector voltage | VECO | 7 | V | |||
| Collector current | IC | 50 | mA | |||
| Collector power dissipation | PC | 150 | mW | |||
| Collector power dissipation derating | (T ≥ 25 ) a | ∆PC/∆Ta | -1.5 | mW/ | ||
| Junction temperature | Tj | 125 | | |||
| Common | Operating temperature | Topr | -55 to 110 | | ||
| Storage temperature | Tstg | -55 to 125 | ||||
| Lead soldering temperature | (10 s) | Tsol | 260 | |||
| Total power dissipation | PT | 200 | mW | |||
| Isolation voltage | AC, 60 s, R.H. ≤ 60% | BV S | (Note 2) | 3750 | Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 μs, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.
7. Electrical Characteristics (Unless otherwise specified, T a = 25 )
| Characteristics | Symbol | Note | Test Condition | Min | Typ. | Max | Unit | |
|---|---|---|---|---|---|---|---|---|
| LED | Input forward voltage | VF | IF = 10 mA | 1.1 | 1.25 | 1.4 | V | |
| Input reverse current | IR | VR = 5 V | | | 5 | μA | ||
| Input capacitance | Ct | V = 0 V, f = 1 MHz | | 30 | | pF | ||
| Detector | Collector-emitter breakdown voltage | V(BR)CEO | IC = 0.5 mA | 80 | | | V | |
| Emitter-collector breakdown voltage | V(BR)ECO | IE = 0.1 mA | 7 | | | |||
| Dark Current | IDARK | VCE = 48 V | | 0.01 | 0.08 | μA | ||
| VCE = 48 V, Ta = 85 | | 2 | 50 | |||||
| Collector-emitter capacitance | CCE | V = 0 V, f = 1 MHz | | 10 | | pF |
8. Coupled Electrical Characteristics (Unless otherwise specified, T a = 25 )
| Characteristics | Symbol | Note | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current transfer ratio | IC/IF | (Note 1) | IF = 5 mA, VCE = 5 V | 50 | | 600 | % |
| IF = 5 mA, VCE = 5 V, Rank GB | 100 | | 600 | ||||
| Saturated current transfer ratio | IC/IF(sat) | IF = 1 mA, VCE = 0.4 V | | 60 | | ||
| IF = 1 mA, VCE = 0.4 V, Rank GB | 30 | | | ||||
| Collector-emitter saturation | VCE(sat) | IC = 2.4 mA, IF = 8 mA | | | 0.3 | V | |
| voltage | IC = 0.2 mA, IF = 1 mA | | 0.2 | | |||
| IC = 0.2 mA, IF = 1 mA, Rank GB | | | 0.3 | ||||
| OFF-state collector current | IC(off) | VF = 0.7 V, VCE = 48 V | | 1 | 10 | μA |
Note 1: See Table 8.1 for current transfer ratio.
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T a = 25 )
| Rank | Test Condition | Current transfer ratio IC/IF Min | Current transfer ratio IC/IF Max | Marking of Classification | Unit |
|---|---|---|---|---|---|
| Blank | IF = 5 mA, VCE = 5 V | 50 | 600 | Blank, YE, GR, GB, BL, Y+, G, G+, B | % |
| Y | 50 | 150 | YE | ||
| GR | 100 | 300 | GR | ||
| GB | 100 | 600 | GB | ||
| BL | 200 | 600 | BL | ||
| YH | 75 | 150 | Y+ | ||
| GRL | 100 | 200 | G | ||
| GRH | 150 | 300 | G+ | ||
| BLL | 200 | 400 | B |
Example: TLP185(GB,SE
For safety standard certification, however, specify the part number alone.
Example: TLP185(GB,SE: TLP185
9. Isolation Characteristics (Unless otherwise specified, T a = 25 )
| Characteristics | Symbol | Note | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Total capacitance (input to output) | CS | (Note 1) | V S = 0 V, f = 1 MHz | | 0.8 | | pF |
| Isolation resistance | RS | (Note 1) | V S = 500 V, R.H. ≤ 60% | 1 × 1012 | 1014 | | Ω |
| Isolation voltage | BV S | (Note 1) | AC, 60 s | 3750 | | | Vrms |
| AC, 1 s in oil | | 10000 | | ||||
| DC, 60 s in oil | | 10000 | | Vdc |
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.
10. Switching Characteristics (Unless otherwise specified,T a = 25 )
| Characteristics | Symbol | Note | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Rise time | tr | VCC = 10 V, IC = 2 mA, | | 2 | | μs | |
| Fall time | tf | RL = 100 Ω | | 3 | | ||
| Turn-on time | ton | | 3 | | |||
| Turn-off time | toff | | 3 | | |||
| Turn-on time | ton | See Fig. 10.1 | | 0.5 | | ||
| Storage time | ts | VCC = 5 V, IF = 16 mA, | | 25 | | ||
| Turn-off time | toff | RL = 1.9 kΩ | | 40 | |
Fig. 10.1 Switching Time Test Circuit and Waveform
Electrical Characteristics
| Characteristics | Symbol | Note | Test Condition | Min | Typ. | Max | Unit | |
|---|---|---|---|---|---|---|---|---|
| LED | Input forward voltage | VF | IF = 10 mA | 1.1 | 1.25 | 1.4 | V | |
| Input reverse current | IR | VR = 5 V | | | 5 | μA | ||
| Input capacitance | Ct | V = 0 V, f = 1 MHz | | 30 | | pF | ||
| Detector | Collector-emitter breakdown voltage | V(BR)CEO | IC = 0.5 mA | 80 | | | V | |
| Emitter-collector breakdown voltage | V(BR)ECO | IE = 0.1 mA | 7 | | | |||
| Dark Current | IDARK | VCE = 48 V | | 0.01 | 0.08 | μA | ||
| VCE = 48 V, Ta = 85 | | 2 | 50 | |||||
| Collector-emitter capacitance | CCE | V = 0 V, f = 1 MHz | | 10 | | pF |
Absolute Maximum Ratings
| Characteristics | Symbol | Note | Rating | Unit | ||
|---|---|---|---|---|---|---|
| LED | Input forward current | IF | 50 | mA | ||
| Input forward current derating | (T ≥ 90 ) a | ∆IF/∆Ta | -1.5 | mA/ | ||
| Input forward current (pulsed) | IFP | (Note 1) | 1 | A | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 100 | mW | |||
| Input power dissipation derating | (T ≥ 90 ) a | ∆PD/∆Ta | -2.86 | mW/ | ||
| Junction temperature | Tj | 125 | | |||
| Detector | Collector-emitter voltage | VCEO | 80 | V | ||
| Emitter-collector voltage | VECO | 7 | V | |||
| Collector current | IC | 50 | mA | |||
| Collector power dissipation | PC | 150 | mW | |||
| Collector power dissipation derating | (T ≥ 25 ) a | ∆PC/∆Ta | -1.5 | mW/ | ||
| Junction temperature | Tj | 125 | | |||
| Common | Operating temperature | Topr | -55 to 110 | | ||
| Storage temperature | Tstg | -55 to 125 | ||||
| Lead soldering temperature | (10 s) | Tsol | 260 | |||
| Total power dissipation | PT | 200 | mW | |||
| Isolation voltage | AC, 60 s, R.H. ≤ 60% | BV S | (Note 2) | 3750 | Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 μs, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TLP185(SE | Toshiba | — |
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