SW15P03

P-channel Enhanced Mode Power MOSFET

The SW15P03 is a p-channel enhanced mode power mosfet from SAMWIN. View the full SW15P03 datasheet below including absolute maximum ratings.

Manufacturer

SAMWIN

Overview

Part: SW15P03 — SAMWIN

Type: P-channel Enhanced mode MOSFET

Description: -30V, -15A P-channel enhanced mode MOSFET with typical on-resistance of 10mΩ at VGS = -10V and low gate charge of 48nC.

Operating Conditions:

Supply voltage: ±25 V (Gate to source voltage)
Operating temperature: -55 to +150 °C
Drain-source voltage: -30 V

Absolute Maximum Ratings:

Max drain to source voltage: -30 V
Max continuous drain current: -15 A (@TC = 25 °C)
Max gate to source voltage: ±25 V
Max junction/storage temperature: -55 to +150 °C

Key Specs:

Drain to source breakdown voltage (BV DSS): -30 V (V GS =0V, I D =-250μA)
Gate threshold voltage (V GS(TH)): -1 to -2.5 V (V DS =V GS , I D =-250μA)
Drain to source on state resistance (R DS(ON)): 14 mΩ (Typ) / 22 mΩ (Max) (V GS =-4.5V, I D =-7.5A)
Drain to source on state resistance (R DS(ON)): 10 mΩ (Typ) / 14 mΩ (Max) (V GS =-10V, I D =-7.5A)
Total gate charge (Q g): 48 nC (Typ) (V DS =-24V, V GS =-10V, I D =-15A)
Input capacitance (C iss): 3290 pF (Typ) (V GS =0V, V DS =-15V, f=1MHz)
Turn on delay time (t d(on)): 15 ns (Typ) (V DS =-15V, I D =-15A, R G =25Ω, V GS =-10V)
Diode forward voltage drop (V SD): -1.4 V (Max) (I S =-15A, V GS =0V)

Features:

High ruggedness
Low R DS(ON) (Typ 14mΩ @VGS =-4.5V, Typ 10mΩ @VGS =-10V)
Low Gate Charge (Typ 48nC)
Improved dv/dt Capability
100% Avalanche Tested

Applications:

Adaptor Input Switch for Notebook PC

Package:

SOP-8
DFN3*3

Features

High ruggedness
Low R DS(ON) (Typ 14mΩ)@VGS =-4.5V Low R DS(ON) (Typ 10mΩ)@V GS =-10V
Low Gate Charge (Typ 48nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Adaptor Input Switch for Notebook PC

Absolute Maximum Ratings

Symbol			Value	Value	Unit
	Parameter		SOP-8	DFN3*3
V DSS	Drain to source voltage	Drain to source voltage	-30	-30	V
I D	Continuous drain current (@T C =25 o C)	Continuous drain current (@T C =25 o C)	-15*	-15*	A
I D	Continuous drain current (@T C =100 o C)	Continuous drain current (@T C =100 o C)	-9.5*	-9.5*	A
I DM	Drain current pulsed	(note 1)	-60	-60	A
V GS	Gate to source voltage	Gate to source voltage	± 25	± 25	V
E AS	Single pulsed avalanche energy	(note 2)	81	81	mJ
dv/dt	Peak diode recovery dv/dt	(note 3)	5	5	V/ns
P D	Total power dissipation (@T a =25 o C)	Total power dissipation (@T a =25 o C)	2.5	2.1	W
P D	Derating factor above 25 o C	Derating factor above 25 o C	0.02	0.017	W/ o C
T STG , T J	Operating junction temperature & storage temperature	Operating junction temperature & storage temperature	-55 ~ + 150	-55 ~ + 150	o C

Thermal Information

		Value	Value	Unit
Symbol	Parameter	SOP-8	DFN3*3
R thja	Thermal resistance, Junction to ambient ( note )	50	60	o C/W

Note: R thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. R thjc is guaranteed by design while R thca is determined by the user's board design.

SOP-8 :

50 o C/W on a 1 in 2 pad of 2oz copper.

DFN3*3 :

60 o C/W on a 1 in2 pad of 2oz copper.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
AP15P03Q	SAMWIN	PDFN3x3-8

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