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STM32L052K8T7

The STM32L052K8T7 is an electronic component from STMicroelectronics. View the full STM32L052K8T7 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

STMicroelectronics

Category

Microcontrollers

Package

32-LQFP

Lifecycle

Production (Last Updated: 6 months ago)

Key Specifications

ParameterValue
ADC Channels (Resolution)10-Ch 12-Bit
Case/PackageLQFP
China RoHSCompliant
ConnectivityI2C, IrDA, SPI, UART/USART, USB
Core ArchitectureARM Cortex-M0+
Core ProcessorARM® Cortex®-M0+
Core Size32-Bit
DAC Channels (Resolution)1-Ch 12-Bit
Data Bus Width32 b
Data ConvertersA/D 10x12b; D/A 1x12b
DigiKey ProgrammableNot Verified
EEPROM Memory Size2 kB
EEPROM Size2K x 8
Flash Memory Size64 kB
Frequency32 MHz
Height - Seated (Max)1.6 mm
InterfaceI2C, USB
Length7 mm
Lifecycle StatusProduction (Last Updated: 6 months ago)
Max Frequency32 MHz
Max Operating Temperature105 °C
Max Power Dissipation526 mW
Max Supply Voltage3.6 V
Memory Size64 kB
Memory TypeFLASH
Min Operating Temperature-40 °C
Min Supply Voltage1.65 V
Mounting TypeSurface Mount
Nominal Supply Current290 nA
Nominal Supply Voltage (DC)3.3 V
Number of Channels10
Number of D/A Converters1
Number of I/O27
Number of I/Os25
Number of I2C Channels1
Number of Pins32
Number of Programmable I/O25
Number of SPI Channels1
Number of Terminals32
Number of Timers/Counters6
Number of USART Channels2
Operating Temperature-40°C ~ 105°C (TA)
Oscillator TypeInternal
Oscillator TypeInternal
Package / Case32-LQFP
PackagingTray
PeripheralsBrown-out Detect/Reset, DMA, POR, PWM, WDT
PeripheralsPOR
Flash Memory Size64KB (64K x 8)
Program Memory TypeFLASH
RAM Size8 kB
RAM Size8K x 8 B
REACH SVHCYes
RoHSCompliant
Clock Speed32MHz
Standard Pack Qty1500
Supplier Device Package32-LQFP (7x7)
Temperature GradeIndustrial
Terminal Pitch800 µm
Supply Voltage1.65V ~ 3.6V
Watchdog TimerYes
Width7 mm

Overview

The ultra-low-power STM32L052x6/8 microcontrollers incorporate the connectivity power of the universal serial bus (USB 2.0 crystal-less) with the high-performance Arm Cortex-M0+ 32-bit RISC core operating at a 32 MHz frequency, a memory protection unit (MPU), highspeed embedded memories (64 Kbytes of Flash program memory, 2 Kbytes of data EEPROM and 8 Kbytes of RAM) plus an extensive range of enhanced I/Os and peripherals.

The STM32L052x6/8 devices provide high power efficiency for a wide range of performance. It is achieved with a large choice of internal and external clock sources, an internal voltage adaptation and several low-power modes.

The STM32L052x6/8 devices offer several analog features, one 12-bit ADC with hardware oversampling, one DAC, two ultra-low-power comparators, several timers, one low-power timer (LPTIM), three general-purpose 16-bit timers and one basic timer, one RTC and one SysTick which can be used as timebases. They also feature two watchdogs, one watchdog with independent clock and window capability and one window watchdog based on bus clock.

Moreover, the STM32L052x6/8 devices embed standard and advanced communication interfaces: up to two I2C, two SPIs, one I2S, two USARTs, a low-power UART (LPUART), and a crystal-less USB. The devices offer up to 24 capacitive sensing channels to simply add touch sensing functionality to any application.

The STM32L052x6/8 also include a real-time clock and a set of backup registers that remain powered in Standby mode.

The ultra-low-power STM32L052x6/8 devices operate from a 1.8 to 3.6 V power supply (down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power supply without BOR option. They are available in the -40 to +125 °C temperature range. A comprehensive set of power-saving modes allows the design of low-power applications.

37

Pin Configuration

PinNameTypeDescription
1VDDP
2PC14-OSC32_INI/Oalt: RCC_OSC32_IN
3PC15-OSC32_OUTI/Oalt: RCC_OSC32_OUT
4NRSTRST
5VDDAP
6PA0I/Oalt: ADC_IN0, COMP1_INM, COMP1_OUT, RTC_TAMP2, SYS_WKUP1, TIM2_CH1, TIM2_ETR, TSC_G1_IO1, USART2_CTS
7PA1I/Oalt: ADC_IN1, COMP1_INP, TIM21_ETR, TIM2_CH2, TSC_G1_IO2, USART2_DE, USART2_RTS
8PA2I/Oalt: ADC_IN2, COMP2_INM, COMP2_OUT, TIM21_CH1, TIM2_CH3, TSC_G1_IO3, USART2_TX
9PA3I/Oalt: ADC_IN3, COMP2_INP, TIM21_CH2, TIM2_CH4, TSC_G1_IO4, USART2_RX
10PA4I/Oalt: ADC_IN4, COMP1_INM, COMP2_INM, DAC_OUT1, SPI1_NSS, TIM22_ETR, TSC_G2_IO1, USART2_CK
11PA5I/Oalt: ADC_IN5, COMP1_INM, COMP2_INM, SPI1_SCK, TIM2_CH1, TIM2_ETR, TSC_G2_IO2
12PA6I/Oalt: ADC_IN6, COMP1_OUT, SPI1_MISO, TIM22_CH1, TSC_G2_IO3
13PA7I/Oalt: ADC_IN7, COMP2_OUT, SPI1_MOSI, TIM22_CH2, TSC_G2_IO4
14PB0I/Oalt: ADC_IN8, SYS_VREF_OUT_PB0, TSC_G3_IO2
15PB1I/Oalt: ADC_IN9, SYS_VREF_OUT_PB1, TSC_G3_IO3
16VSSP
17VDDP
18PA8I/Oalt: CRS_SYNC, RCC_MCO, USART1_CK
19PA9I/Oalt: DAC_EXTI9, RCC_MCO, TSC_G4_IO1, USART1_TX
20PA10I/Oalt: TSC_G4_IO2, USART1_RX
21PA11I/Oalt: ADC_EXTI11, COMP1_OUT, SPI1_MISO, TSC_G4_IO3, USART1_CTS, USB_DM
22PA12I/Oalt: COMP2_OUT, SPI1_MOSI, TSC_G4_IO4, USART1_DE, USART1_RTS, USB_DP
23PA13I/Oalt: SYS_SWDIO, USB_NOE
24PA14I/Oalt: SYS_SWCLK, USART2_TX
25PA15I/Oalt: SPI1_NSS, TIM2_CH1, TIM2_ETR, USART2_RX
26PB3I/Oalt: COMP2_INM, SPI1_SCK, TIM2_CH2, TSC_G5_IO1
27PB4I/Oalt: COMP2_INP, SPI1_MISO, TIM22_CH1, TSC_G5_IO2
28PB5I/Oalt: COMP2_INP, I2C1_SMBA, LPTIM1_IN1, SPI1_MOSI, TIM22_CH2
29PB6I/Oalt: COMP2_INP, I2C1_SCL, LPTIM1_ETR, TSC_G5_IO3, USART1_TX
30PB7I/Oalt: COMP2_INP, I2C1_SDA, LPTIM1_IN2, SYS_PVD_IN, TSC_G5_IO4, USART1_RX
31BOOT0I
32VSSP

Electrical Characteristics

The definition and values of input/output AC characteristics are given in Figure 26 and Table 61 , respectively.

Unless otherwise specified, the parameters given in Table 61 are derived from tests performed under ambient temperature and V DD supply voltage conditions summarized in Table 25 .

Table 61. I/O AC characteristics (1)

OSPEEDRx[1:0] bit value (1)SymbolParameterConditionsMinMax (2)Unit
00f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 2.7 V to 3.6 V-400kHz
00f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 1.65 V to 2.7 V-100kHz
00t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-125ns
00t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-320ns
01f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 2.7 V to 3.6 V-2MHz
01f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 1.65 V to 2.7 V-0.6MHz
01t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-30ns
01t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-65ns
10F max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 2.7 V to 3.6 V-10MHz
10F max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 1.65 V to 2.7 V-2MHz
10t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-13ns
10t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-28ns
11F max(IO)outMaximum frequency (3)C L = 30 pF, V DD = 2.7 V to 3.6 V-35MHz
11F max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 1.65 V to 2.7 V-10MHz
11t f(IO)out t r(IO)outOutput rise and fall timeC L = 30 pF, V DD = 2.7 V to 3.6 V-6ns
11t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-17ns
Fm+ configuration (4)f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 2.5 V to 3.6 V-1MHz
Fm+ configuration (4)t f(IO)outOutput fall timeC L = 50 pF, V DD = 2.5 V to 3.6 V-10ns
Fm+ configuration (4)t r(IO)outOutput rise timeC L = 50 pF, V DD = 2.5 V to 3.6 V-30ns
Fm+ configuration (4)f max(IO)outMaximum frequency (3)C L = 50 pF, V DD = 2.5 V to 3.6 V-350KHz
Fm+ configuration (4)t f(IO)outOutput fall timeC L = 50 pF, V DD = 1.65 V to 3.6 V-15ns
Fm+ configuration (4)t r(IO)outOutput rise timeC L = 50 pF, V DD = 2.5 V to 3.6 V-60ns
-t EXTIpwPulse width of external signals detected by the EXTI controller-8-ns
  1. The maximum frequency is defined in Figure 26 .
  2. When Fm+ configuration is set, the I/O speed control is bypassed. Refer to the line reference manual for a detailed description of Fm+ I/O configuration.

114

Figure 26. I/O AC characteristics definition

Absolute Maximum Ratings

Stresses above the absolute maximum ratings listed in Table 22: Voltage characteristics , Table 23: Current characteristics , and Table 24: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 Qualification Standard. Extended mission profiles are available on demand.

Table 22. Voltage characteristics

SymbolDefinitionMinMaxUnit
V DD -V SSExternal main supply voltage (including V DDA , V DD_USB , V DD ) (1)-0.34.0V
V IN (2)Input voltage on FT and FTf pinsV SS - 0.3V DD +4.0V
V IN (2)Input voltage on TC pinsV SS - 0.34.0V
V IN (2)Input voltage on BOOT0V SSV DD + 4.0V
V IN (2)Input voltage on any other pinV SS - 0.34.0V
\∆ V DD \Variations between different V DDx power pins-
\V DDA -V DDx \Variations between any V DDx and V DDA power pins (3)-
\∆ V SS \Variations between all different ground pins-
V REF+ -V DDAAllowed voltage difference for V REF+ > V DDA-0.4V
V ESD(HBM)Electrostatic discharge voltage (human body model)see Section 6.3.11see Section 6.3.11

Table 23. Current characteristics

Table 23. Current characteristics

SymbolRatingsMax.Unit
Σ I VDD (2)Total current into sum of all V DD power lines (source) (1)105mA
Σ I VSS (2)Total current out of sum of all V SS ground lines (sink) (1)105mA
Σ I VDD_USBTotal current into V DD_USB power lines (source)25mA
I VDD(PIN)Maximum current into each V DD power pin (source) (1)100mA
I VSS(PIN)Maximum current out of each V SS ground pin (sink) (1)100mA
I IOOutput current sunk by any I/O and control pin except FTf pins16mA
I IOOutput current sunk by FTf pins22mA
I IOOutput current sourced by any I/O and control pin-16mA
Σ I IO(PIN)Total output current sunk by sum of all IOs and control pins except PA11 and PA12 (2)90mA
Σ I IO(PIN)Total output current sunk by PA11 and PA1225mA
Σ I IO(PIN)Total output current sourced by sum of all IOs and control pins (2)-90mA
I INJ(PIN)Injected current on FT, FTf, RST and B pins-5/+0 (3)mA
I INJ(PIN)Injected current on TC pin± 5 (4)mA
Σ I INJ(PIN)Total injected current (sum of all I/O and control pins) (5)± 25mA
  1. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
  2. Positive current injection is not possible on these I/Os. A negative injection is induced by V IN <V SS . I INJ(PIN) must never be exceeded. Refer to Table 22 for maximum allowed input voltage values.
  3. A positive injection is induced by V IN > V DD while a negative injection is induced by V IN < V SS . I INJ(PIN) must never be exceeded. Refer to Table 22: Voltage characteristics for the maximum allowed input voltage values.
  4. When several inputs are submitted to a current injection, the maximum Σ I INJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values).

Table 24. Thermal characteristics

SymbolRatingsValueUnit
T STGStorage temperature range-65 to +150°C
T JMaximum junction temperature150°C

114

Thermal Information

The maximum chip-junction temperature, T J max, in degrees Celsius, may be calculated using the following equation:

T J max = T A max + (P D max × Θ JA )

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at www.st.com. ECOPACK is an ST trademark.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
STM32L052K8STMicroelectronics
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