SGP30

Part: Infineon SGP30N60 / SGW30N60

Type: Fast IGBT in NPT-technology

Key Specs:

• Collector-emitter voltage: 600 V
• DC collector current (TC = 100°C): 30 A
• VCE(sat): 2.5 V
• Short circuit withstand time: 10 µs
• Power dissipation (TC = 25°C): 250 W
• Operating junction and storage temperature: -55...+150 °C

Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• NPT-Technology for 600V applications offers:
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant

Applications:

• Motor controls
• Inverter

Package:

• PG-TO-220-3-1
• PG-TO-247-3

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V C E	600	V
DC collector current	I C		A
TC = 25°C		41
TC = 100°C		30
Pulsed collector current, tp limited by Tjmax	I Cpuls	112
Turn off safe operating area	-	112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage	V G E	±20	V
Avalanche energy, single pulse	EA S	165	mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time2	tS C	10	μs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation	Ptot	250	W
TC = 25°C
Operating junction and storage temperature	Tj , Tstg	-55...+150	°C
Soldering temperature,	Ts	260
wavesoldering, 1.6mm (0.063 in.) from case for 10s

² Allowed number of short circuits: <1000; time between short circuits: >1s.

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current	IC		A
TC = 25°C		41
TC = 100°C		30
Pulsed collector current, tp limited by Tjmax	ICpuls	112
Turn off safe operating area	-	112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage	VGE	±20	V
Avalanche energy, single pulse	EAS	165	mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time²	tSC	10	µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation	Ptot	250	W
TC = 25°C
Operating junction and storage temperature	Tj, Tstg	-55...+150	°C
Soldering temperature,	Ts	260
wavesoldering, 1.6mm (0.063 in.) from case for 10s

Electrical Characteristic, at T^j = 25 °C, unless otherwise specified

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current	I_C		A
T_C = 25°C		41
T_C = 100°C		30
Pulsed collector current, t_p limited by T_jmax	I_Cpuls	112
Turn off safe operating area	-
V_CE ≤ 600V, T_j ≤ 150°C

1. Allowed number of short circuits: <1000; time between short circuits: >1s.

Switching Characteristic, Inductive Load, at T^j =25 °C

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current	IC		A
TC = 25°C		41
TC = 100°C		30
Pulsed collector current, tp limited by Tjmax	ICpuls	112
Turn off safe operating area	-	112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage	VGE	±20	V
Avalanche energy, single pulse	EAS	165	mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time²	tSC	10	µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation	Ptot	250	W
TC = 25°C
Operating junction and storage temperature	Tj, Tstg	-55...+150	°C
Soldering temperature,	Ts	260
wavesoldering, 1

Switching Characteristic, Inductive Load, at T^j =150 °C

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current	IC		A
TC = 25°C		41
TC = 100°C		30
Pulsed collector current, tp limited by Tjmax	ICpuls	112
Turn off safe operating area	-	112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage	VGE	±20	V
Avalanche energy, single pulse	EAS	165	mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time²	tSC	10	µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation	Ptot	2

1. Leakage inductance L^σ and Stray capacity Cσ due to dynamic test circuit in Figure E.

(VGE = 15V)

IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a

function of collector current

(inductive load, T^j = 150°C, VCE = 400V, VGE = 0/+15V, RG = 11Ω, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a function of gate resistor (inductive load, T^j = 150°C, VCE = 400V, VGE = 0/+15V, IC = 30A,

Dynamic test circuit in Figure E)

6 Rev. 2.5 Nov. 09

typ.

max.

min.

Figure 13. Typical switching energy losses as a function of collector current (inductive load, T^j = 150°C, VCE = 400V, VGE = 0/+15V, RG = 11Ω, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T^j = 150°C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)

(inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11Ω, Dynamic test circuit in Figure E)

Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current	IC		A
TC = 25°C		41
TC = 100°C		30
Pulsed collector current, tp limited by Tjmax	ICpuls	112
Turn off safe operating area	-	112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage	VGE	±20	V
Avalanche energy, single pulse	EAS	165	mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time²	tSC	10	µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation	Ptot	250	W
TC = 25°C
Operating junction and storage temperature	Tj, Tstg	-55...+150	°C
Soldering temperature,	Ts	260
wavesoldering, 1.6mm (0.063 in.) from case for 10s

Figure B. Definition of switching losses

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