SGP30
IGBTThe SGP30 is a igbt from Sensirion. View the full SGP30 datasheet below including key specifications, absolute maximum ratings.
Official SGP30 datasheet (PDF) — the source this page was extracted from.
SGP30 Key Specifications
| Parameter | Value |
|---|---|
| VCE(Sat) | 2.1V typ, 2.4V max at 25°C; 2.5V typ, 3.0V max at 150°C (IC=30A, VGE=15V) |
| Turn-On Delay Time | 44 ns typ |
| Gate Charge (QGate) | 140 nC typ |
| Turn-Off Delay Time | 291 ns typ at 25°C |
| Avalanche Energy (EAS) | 165 mJ |
| Collector Current (IC) | 30A at TC=100°C |
| Input Capacitance (Ciss) | 1600 pF typ |
| Junction Temperature (Tj) | 150°C max |
| Gate-Emitter Voltage (VGE) | ±20V |
| Power Dissipation (TC=25°C) | 250W |
| Short Circuit Withstand Time | 10 µs |
| Total Switching Energy (Ets) | 1.29 mJ typ at 25°C; 1.90 mJ typ at 150°C |
| Operating/Storage Temperature | -55°C to +150°C |
| Gate-Emitter Threshold Voltage | 3V to 5V |
| Collector-Emitter Voltage (VCE) | 600V |
| DC Collector Current (TC=25°C) | 41A |
| Pulsed Collector Current (ICpuls) | 112A |
| Thermal Resistance Junction-Case (RthJC) | 0.5 K/W |
| Thermal Resistance Junction-Ambient (TO-220) | 62 K/W |
SGP30 Overview
Part: SGP30N60, SGW30N60 — Infineon Technologies
Type: Fast IGBT in NPT-technology
Description: 600V, 30A Fast IGBT in NPT-technology offering 75% lower E_off compared to previous generation, low conduction losses, and 10 μs short circuit withstand time.
Operating Conditions:
- Supply voltage: 600 V (Collector-emitter voltage)
- Operating temperature: -55 to +150 °C
- Short circuit withstand time: 10 μs (VGE = 15V, VCC ≤ 600V, Tj ≤ 150 °C)
Absolute Maximum Ratings:
- Max supply voltage: 600 V (Collector-emitter voltage)
- Max continuous current: 30 A (DC collector current at TC = 100 °C is 30A, at TC = 25 °C is 41A. Part table lists 30A.)
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-emitter breakdown voltage: 600 V (min) at VGE=0V, IC=500 μA
- Collector-emitter saturation voltage: 2.1 V (typ) at VGE=15V, IC=30A, Tj=25°C
- Gate-emitter threshold voltage: 4 V (typ) at IC=700 μA, VCE=VGE
- Zero gate voltage collector current: 40 μA (max) at VCE=600V, VGE=0V, Tj=25°C
- Input capacitance: 1600 pF (typ) at VCE=25V, VGE=0V, f=1MHz
- Gate charge: 140 nC (typ) at VCC=480V, IC=30A, VGE=15V
- IGBT thermal resistance, junction - case: 0.5 K/W
- Turn-off energy: 0.65 mJ (typ) at Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=11 Ω
Features:
- 75% lower E_off compared to previous generation
- NPT-Technology for 600V applications
- Very tight parameter distribution
- High ruggedness, temperature stable behaviour
- Parallel switching capability
- Qualified according to JEDEC 1 for target applications
- Pb-free lead plating; RoHS compliant
Applications:
- Motor controls
- Inverter
Package:
- PG-TO-220-3-1
- PG-TO-247-3-21
SGP30 Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | V CE | 600 | V |
| DC collector current T C = 25 ° C | I C | A | |
| T C = 100 ° C | 41 | A | |
| Pulsed collector current, t limited | 30 | A | |
| p by T jmax | I Cpuls | 112 | A |
| Turn off safe operating area | - | 112 | A |
| V CE ≤ 600V, T j ≤ 150 ° C | A | ||
| Gate-emitter voltage | V GE | ± 20 | V |
| Avalanche energy, single pulse | E AS | 165 | mJ |
| I C = 30 A, V CC = 50 V, R GE = 25 Ω , start at T j = 25 ° C | |||
| Short circuit withstand time | μ s | ||
| 2 | t SC | 10 | |
| V = 15V, V 600V, T 150 ° C | |||
| GE CC ≤ j ≤ | P t ot | 250 | |
| Power dissipation | W | ||
| T C = 25 ° C | |||
| Operating junction and storage | -55...+150 | ||
| temperature | T j , T stg T s | 260 | |
| Soldering temperature, | |||
| wavesoldering, 1.6mm (0.063 in.) from case for | |||
| C | C | C | C |
| ° | ° | ° | ° |
SGP30 Thermal Information
| Parameter | Symbol | Conditions | Max. Value | Unit |
|---|---|---|---|---|
| Characteristic | ||||
| IGBT thermal resistance, junction - case | R thJC | 0.5 | K/W | |
| Thermal resistance, | R thJA | PG-TO-220-3-1 | 62 | |
| junction - ambient | PG-TO-247-3-21 | 40 |
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