SGW30N60
Fast NPT IGBTThe SGW30N60 is a fast npt igbt from Infineon Technologies. View the full SGW30N60 datasheet below including key specifications, absolute maximum ratings.
SGW30N60 shares its datasheet with SGP30, whose page lists every part number it covers.
Official SGW30N60 datasheet (PDF) — the source this page was extracted from.
SGW30N60 Key Specifications
| Parameter | Value |
|---|---|
| Gate Charge (QGate) | 140 nC typ |
| Avalanche Energy (EAS) | 165 mJ |
| Input Capacitance (Ciss) | 1600 pF typ |
| Gate-Emitter Voltage (VGE) | ±20V |
| Short Circuit Withstand Time | 10 µs |
| Operating Junction Temperature | -55°C to +150°C |
| Collector-Emitter Voltage (VCE) | 600V |
| Turn-Off Energy (Eoff) At 25°C | 0.65 mJ typ |
| Pulsed Collector Current (ICpuls) | 112A |
| Power Dissipation (Ptot) At TC=25°C | 250W |
| DC Collector Current (IC) At TC=25°C | 41A |
| Total Switching Energy (Ets) At 25°C | 1.29 mJ typ |
| DC Collector Current (IC) At TC=100°C | 30A |
| Gate-Emitter Threshold Voltage (VGE(Th)) | 3V to 5V |
| Thermal Resistance Junction-Case (RthJC) | 0.5 K/W |
| Thermal Resistance Junction-Ambient (RthJA) | 40 K/W |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 2.1V typ, 2.4V max at 25°C; 2.5V typ, 3.0V max at 150°C |
SGW30N60 Overview
Part: SGP30N60, SGW30N60 — Infineon Technologies
Type: Fast IGBT in NPT-technology
Description: 600V, 30A Fast IGBT in NPT-technology offering 75% lower E_off compared to previous generation, low conduction losses, and 10 μs short circuit withstand time.
Operating Conditions:
- Supply voltage: 600 V (Collector-emitter voltage)
- Operating temperature: -55 to +150 °C
- Short circuit withstand time: 10 μs (VGE = 15V, VCC ≤ 600V, Tj ≤ 150 °C)
Absolute Maximum Ratings:
- Max supply voltage: 600 V (Collector-emitter voltage)
- Max continuous current: 30 A (DC collector current at TC = 100 °C is 30A, at TC = 25 °C is 41A. Part table lists 30A.)
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-emitter breakdown voltage: 600 V (min) at VGE=0V, IC=500 μA
- Collector-emitter saturation voltage: 2.1 V (typ) at VGE=15V, IC=30A, Tj=25°C
- Gate-emitter threshold voltage: 4 V (typ) at IC=700 μA, VCE=VGE
- Zero gate voltage collector current: 40 μA (max) at VCE=600V, VGE=0V, Tj=25°C
- Input capacitance: 1600 pF (typ) at VCE=25V, VGE=0V, f=1MHz
- Gate charge: 140 nC (typ) at VCC=480V, IC=30A, VGE=15V
- IGBT thermal resistance, junction - case: 0.5 K/W
- Turn-off energy: 0.65 mJ (typ) at Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=11 Ω
Features:
- 75% lower E_off compared to previous generation
- NPT-Technology for 600V applications
- Very tight parameter distribution
- High ruggedness, temperature stable behaviour
- Parallel switching capability
- Qualified according to JEDEC 1 for target applications
- Pb-free lead plating; RoHS compliant
Applications:
- Motor controls
- Inverter
Package:
- PG-TO-220-3-1
- PG-TO-247-3-21
SGW30N60 Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | V CE | 600 | V |
| DC collector current T C = 25 ° C | I C | A | |
| T C = 100 ° C | 41 | A | |
| Pulsed collector current, t limited | 30 | A | |
| p by T jmax | I Cpuls | 112 | A |
| Turn off safe operating area | - | 112 | A |
| V CE ≤ 600V, T j ≤ 150 ° C | A | ||
| Gate-emitter voltage | V GE | ± 20 | V |
| Avalanche energy, single pulse | E AS | 165 | mJ |
| I C = 30 A, V CC = 50 V, R GE = 25 Ω , start at T j = 25 ° C | |||
| Short circuit withstand time | μ s | ||
| 2 | t SC | 10 | |
| V = 15V, V 600V, T 150 ° C | |||
| GE CC ≤ j ≤ | P t ot | 250 | |
| Power dissipation | W | ||
| T C = 25 ° C | |||
| Operating junction and storage | -55...+150 | ||
| temperature | T j , T stg T s | 260 | |
| Soldering temperature, | |||
| wavesoldering, 1.6mm (0.063 in.) from case for | |||
| C | C | C | C |
| ° | ° | ° | ° |
SGW30N60 Thermal Information
| Parameter | Symbol | Conditions | Max. Value | Unit |
|---|---|---|---|---|
| Characteristic | ||||
| IGBT thermal resistance, junction - case | R thJC | 0.5 | K/W | |
| Thermal resistance, | R thJA | PG-TO-220-3-1 | 62 | |
| junction - ambient | PG-TO-247-3-21 | 40 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| SGP30N60 | Infineon Technologies | TO-220-3 |
Other IGBTs
All IGBTs datasheetsAll Infineon Technologies datasheets (140)
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