PN2222ATF
NPN General-Purpose TransistorThe PN2222ATF is a npn general-purpose transistor from Rectron. View the full PN2222ATF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
PN2222ATF shares its datasheet with PN2222A, whose page lists every part number it covers.
Official PN2222ATF datasheet (PDF) — the source this page was extracted from.
Manufacturer
RectronCategory
NPN General-Purpose Transistor
PN2222ATF Key Specifications
| Parameter | Value |
|---|---|
| Collector Current (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) | 100 @ 150mA, 10V |
| Transition Frequency | 270MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Packaging | Ammo Pack |
| Power (Max) | 500 mW |
| Standard Pack Qty | 2000 |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation | 1V @ 50mA, 500mA |
| Collector-Emitter Breakdown Voltage | 40 V |
PN2222ATF Overview
Part: PN2222A — Fairchild Semiconductor (now part of ON Semiconductor)
Type: NPN General-Purpose Amplifier / Switching Transistor (BJT)
Description: 40 V, 1.0 A (abs max) NPN bipolar transistor in TO-92, intended as a medium power amplifier and switch for collector currents up to 500 mA, with fT ≥ 300 MHz.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to 150 °C (operating and storage junction temperature range)
- Recommended collector current: up to 500 mA
Absolute Maximum Ratings:
- Collector-emitter voltage (VCEO): 40 V
- Collector-base voltage (VCBO): 75 V
- Emitter-base voltage (VEBO): 6.0 V
- Collector current (IC): 1.0 A
- Operating and storage junction temperature: -55 to 150 °C
Key Specs:
- BV(BR)CEO: ≥ 40 V (IC = 10 mA, IB = 0)
- DC current gain hFE: 100 to 300 (IC = 150 mA, VCE = 10 V); ≥ 40 at IC = 500 mA, VCE = 10 V
- VCE(sat): ≤ 0.3 V (IC = 150 mA, IB = 15 mA); ≤ 1.0 V (IC = 500 mA, IB = 50 mA)
- VBE(sat): 0.6–1.2 V (IC = 150 mA, IB = 15 mA); ≤ 2.0 V (IC = 500 mA, IB = 50 mA)
- Current gain bandwidth fT: ≥ 300 MHz (IC = 20 mA, VCE = 20 V, f = 100 MHz)
- Output capacitance Cobo: ≤ 8.0 pF (VCB = 10 V, f = 1 MHz)
- Switching (VCC = 30 V, IC = 150 mA): td ≤ 10 ns, tr ≤ 25 ns, ts ≤ 225 ns, tf ≤ 60 ns
- Power dissipation: 625 mW at TA = 25 °C (derate 5.0 mW/°C); RθJA 200 °C/W, RθJC 83.3 °C/W
Features:
- Medium power amplifier and switch for collector currents up to 500 mA
- Low leakage: ICBO ≤ 0.01 μA at VCB = 60 V
- Noise figure ≤ 4.0 dB (IC = 100 μA, VCE = 10 V, RS = 1 kΩ, f = 1 kHz)
Applications:
- Medium power amplification
- General-purpose switching
Package:
- TO-92 3L (bulk, ammo, tape and reel options: PN2222ABU, PN2222ATA, PN2222ATF, PN2222ATFR)
PN2222ATF Features
- This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
PN2222ATF Electrical Characteristics
Values are at T A = 25°C unless otherwise noted.
| Symbol | Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics |
| BV (BR)CEO | Collector-Emitter Breakdown Voltage (4) | I C = 10 mA, I B = 0 | 40 | V | |
| BV (BR)CBO | Collector-Base Breakdown Voltage | I C = 10 μ A, I E = 0 | 75 | V | |
| BV (BR)EBO | Emitter-Base Breakdown Voltage | I E = 10 μ A, I C = 0 | 6.0 | V | |
| I CEX | Collector Cut-Off Current | V CE = 60 V, V EB(off) = 3.0 V | 10 | nA | |
| I CBO | Collector Cut-Off Current | V CB = 60 V, I E = 0 V CB = 60 V, I E = 0, T A = 125 ° C | 0.01 10 | μ A | |
| I EBO | Emitter Cut-Off Current | V EB = 3.0 V, I C = 0 | 10 | nA | |
| I BL | Base Cut-Off Current | V CE = 60 V, V EB(off) = 3.0 V | 20 | nA | |
| On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics |
| h FE | DC Current Gain | I C = 0.1 mA, V CE = 10 V I C = 1.0 mA, V CE = 10 V I C = 10 mA, V CE = 10 V I C = 10 mA, V CE = 10 V, T A = -55 ° C | 35 50 75 35 | ||
| I C = 150 mA, V CE = 10 V (4) I C = 150 mA, V CE = 1 V (4) I C = 500 mA, V CE = 10 V (4) | 100 50 40 | 300 | |||
| V | Collector-Emitter Saturation Voltage (4) | I C = 150 mA, I B = 15 mA | 0.3 | V | |
| CE(sat) | I C = 500 mA, I B = 50 mA | 1.0 | |||
| V | Base-Emitter Saturation Voltage (4) | I C = 150 mA, I B = 15 mA | 0.6 | 1.2 | |
| BE(sat) | I C = 500 mA, I B = 50 mA | 2.0 | V | ||
| Small Signal Characteristics | Small Signal Characteristics | Small Signal Characteristics | Small Signal Characteristics | Small Signal Characteristics | Small Signal Characteristics |
| f T | Current Gain Bandwidth Product | I C = 20 mA, V CE = 20 V, f = 100 MHz | 300 | MHz | |
| C obo | Output Capacitance | V CB = 10 V, I E = 0, f = 1 MHz | 8.0 | pF | |
| C ibo | Input Capacitance | V EB = 0.5 V, I C = 0, f = 1 MHz | 25 | pF | |
| rb'C c | Collector Base Time Constant | I C = 20 mA, V CB = 20 V, f = 31.8 MHz | 150 | pS | |
| NF | Noise Figure | I C = 100 μ A, V CE = 10 V, R S = 1.0 k Ω , f = 1.0 kHz | 4.0 | dB | |
| Re(h ie ) | Real Part of Common-Emitter High Frequency Input Impedance | I C = 20 mA, V CE = 20 V, f = 300 MHz | 60 | Ω | |
| Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics |
| t d | Delay Time | V CC = 30 V, V EB(off) = 0.5 V, | 10 | ns | |
| t r | Rise Time | I C = 150 mA, I B1 = 15 mA | 25 | ns | |
| t s | Storage Time | V CC = 30 V, I C = 150 mA, | 225 | ns | |
| t f | Fall Time | I B1 = I B2 = 15 mA | 60 | ns |
PN2222ATF Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 ° C unless otherwise noted.
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V CEO | Collector-Emitter Voltage | 40 | V |
| V CBO | Collector-Base Voltage | 75 | V |
| V EBO | Emitter-Base Voltage | 6.0 | V |
| I C | Collector Current | 1.0 | A |
| T STG | Operating and Storage Junction Temperature Range | -55 to 150 | ° C |
PN2222ATF Thermal Information
Values are at T A = 25 ° C unless otherwise noted.
| Symbol | Parameter | Max. | Unit |
|---|---|---|---|
| P D | Total Device Dissipation | 625 | mW |
| P D | Derate Above 25 ° C | 5.0 | mW/ ° C |
| R θ JC | Thermal Resistance, Junction to Case | 83.3 | ° C/W |
| R θ JA | Thermal Resistance, Junction to Ambient | 200 | ° C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| PN2222A | Rectron | TO-226-3, TO-92-3 (TO-226AA) |
| PN2222ABU | onsemi | |
| PN2222ATA | Rectron | — |
| PN2222ATFR | Rectron | — |
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