PN2222ABU

NPN General-Purpose Transistor

The PN2222ABU is a npn general-purpose transistor from onsemi. View the full PN2222ABU datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

PN2222ABU shares its datasheet with PN2222A, whose page lists every part number it covers.

Official PN2222ABU datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

PN2222ABU Key Specifications

Parameter	Value
Case/Package	TO-92
China RoHS	Compliant
Collector Base Voltage (VCBO)	75 V
Collector Emitter Breakdown Voltage	40 V
Collector Emitter Saturation Voltage	1 V
Collector Emitter Voltage (VCEO)	40 V
Contact Plating	Tin
Current Rating	500 mA
Element Configuration	Single
Emitter Base Voltage (VEBO)	6 V
Frequency	300 MHz
Gain Bandwidth Product	300 MHz
Height	5.33 mm
hFE Min	40
Introduction Date	1999-01-01
Lead Free	Contains Lead
Length	5.2 mm
Lifecycle Status	Production (Last Updated: 4 days ago)
Manufacturer Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Manufacturer Package Identifier	MKT-ZA03DREV3
Max Collector Current	1 A
Max Frequency	300 MHz
Max Operating Temperature	150 °C
Max Power Dissipation	625 mW
Min Operating Temperature	-55 °C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Packaging	Bulk
Polarity	NPN
Power Dissipation	625 mW
Radiation Hardening	No
REACH SVHC	Unaffected
RoHS	Compliant
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080
Transition Frequency	300 MHz
Turn-Off Delay Time	250 ns
Turn-On Delay Time	35 ns
Voltage Rating (DC)	40 V
Weight	179 mg
Width	4.19 mm

PN2222ABU Overview

Part: PN2222A — Fairchild Semiconductor (now part of ON Semiconductor)

Type: NPN General-Purpose Amplifier / Switching Transistor (BJT)

Description: 40 V, 1.0 A (abs max) NPN bipolar transistor in TO-92, intended as a medium power amplifier and switch for collector currents up to 500 mA, with fT ≥ 300 MHz.

Operating Conditions:

Supply voltage: not applicable
Operating temperature: -55 to 150 °C (operating and storage junction temperature range)
Recommended collector current: up to 500 mA

Absolute Maximum Ratings:

Collector-emitter voltage (VCEO): 40 V
Collector-base voltage (VCBO): 75 V
Emitter-base voltage (VEBO): 6.0 V
Collector current (IC): 1.0 A
Operating and storage junction temperature: -55 to 150 °C

Key Specs:

BV(BR)CEO: ≥ 40 V (IC = 10 mA, IB = 0)
DC current gain hFE: 100 to 300 (IC = 150 mA, VCE = 10 V); ≥ 40 at IC = 500 mA, VCE = 10 V
VCE(sat): ≤ 0.3 V (IC = 150 mA, IB = 15 mA); ≤ 1.0 V (IC = 500 mA, IB = 50 mA)
VBE(sat): 0.6–1.2 V (IC = 150 mA, IB = 15 mA); ≤ 2.0 V (IC = 500 mA, IB = 50 mA)
Current gain bandwidth fT: ≥ 300 MHz (IC = 20 mA, VCE = 20 V, f = 100 MHz)
Output capacitance Cobo: ≤ 8.0 pF (VCB = 10 V, f = 1 MHz)
Switching (VCC = 30 V, IC = 150 mA): td ≤ 10 ns, tr ≤ 25 ns, ts ≤ 225 ns, tf ≤ 60 ns
Power dissipation: 625 mW at TA = 25 °C (derate 5.0 mW/°C); RθJA 200 °C/W, RθJC 83.3 °C/W

Features:

Medium power amplifier and switch for collector currents up to 500 mA
Low leakage: ICBO ≤ 0.01 μA at VCB = 60 V
Noise figure ≤ 4.0 dB (IC = 100 μA, VCE = 10 V, RS = 1 kΩ, f = 1 kHz)

Applications:

Medium power amplification
General-purpose switching

Package:

TO-92 3L (bulk, ammo, tape and reel options: PN2222ABU, PN2222ATA, PN2222ATF, PN2222ATFR)

PN2222ABU Features

This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

PN2222ABU Electrical Characteristics

Values are at T A = 25°C unless otherwise noted.

Symbol	Parameter	Conditions	Min.	Max.	Unit
Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics
BV (BR)CEO	Collector-Emitter Breakdown Voltage (4)	I C = 10 mA, I B = 0	40		V
BV (BR)CBO	Collector-Base Breakdown Voltage	I C = 10 μ A, I E = 0	75		V
BV (BR)EBO	Emitter-Base Breakdown Voltage	I E = 10 μ A, I C = 0	6.0		V
I CEX	Collector Cut-Off Current	V CE = 60 V, V EB(off) = 3.0 V		10	nA
I CBO	Collector Cut-Off Current	V CB = 60 V, I E = 0 V CB = 60 V, I E = 0, T A = 125 ° C		0.01 10	μ A
I EBO	Emitter Cut-Off Current	V EB = 3.0 V, I C = 0		10	nA
I BL	Base Cut-Off Current	V CE = 60 V, V EB(off) = 3.0 V		20	nA
On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics
h FE	DC Current Gain	I C = 0.1 mA, V CE = 10 V I C = 1.0 mA, V CE = 10 V I C = 10 mA, V CE = 10 V I C = 10 mA, V CE = 10 V, T A = -55 ° C	35 50 75 35
		I C = 150 mA, V CE = 10 V (4) I C = 150 mA, V CE = 1 V (4) I C = 500 mA, V CE = 10 V (4)	100 50 40	300
V	Collector-Emitter Saturation Voltage (4)	I C = 150 mA, I B = 15 mA		0.3	V
CE(sat)		I C = 500 mA, I B = 50 mA		1.0
V	Base-Emitter Saturation Voltage (4)	I C = 150 mA, I B = 15 mA	0.6	1.2
BE(sat)		I C = 500 mA, I B = 50 mA		2.0	V
Small Signal Characteristics	Small Signal Characteristics	Small Signal Characteristics	Small Signal Characteristics	Small Signal Characteristics	Small Signal Characteristics
f T	Current Gain Bandwidth Product	I C = 20 mA, V CE = 20 V, f = 100 MHz	300		MHz
C obo	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz		8.0	pF
C ibo	Input Capacitance	V EB = 0.5 V, I C = 0, f = 1 MHz		25	pF
rb'C c	Collector Base Time Constant	I C = 20 mA, V CB = 20 V, f = 31.8 MHz		150	pS
NF	Noise Figure	I C = 100 μ A, V CE = 10 V, R S = 1.0 k Ω , f = 1.0 kHz		4.0	dB
Re(h ie )	Real Part of Common-Emitter High Frequency Input Impedance	I C = 20 mA, V CE = 20 V, f = 300 MHz		60	Ω
Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics
t d	Delay Time	V CC = 30 V, V EB(off) = 0.5 V,		10	ns
t r	Rise Time	I C = 150 mA, I B1 = 15 mA		25	ns
t s	Storage Time	V CC = 30 V, I C = 150 mA,		225	ns
t f	Fall Time	I B1 = I B2 = 15 mA		60	ns

PN2222ABU Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 ° C unless otherwise noted.

Symbol	Parameter	Value	Unit
V CEO	Collector-Emitter Voltage	40	V
V CBO	Collector-Base Voltage	75	V
V EBO	Emitter-Base Voltage	6.0	V
I C	Collector Current	1.0	A
T STG	Operating and Storage Junction Temperature Range	-55 to 150	° C

PN2222ABU Thermal Information

Values are at T A = 25 ° C unless otherwise noted.

Symbol	Parameter	Max.	Unit
P D	Total Device Dissipation	625	mW
P D	Derate Above 25 ° C	5.0	mW/ ° C
R θ JC	Thermal Resistance, Junction to Case	83.3	° C/W
R θ JA	Thermal Resistance, Junction to Ambient	200	° C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
PN2222A	Rectron	TO-226-3, TO-92-3 (TO-226AA)
PN2222ATA	Rectron	—
PN2222ATF	Rectron	—
PN2222ATFR	Rectron	—

More datasheets

All onsemi datasheets (354)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the PN2222ABU

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the PN2222ABU run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.