PMEG3020EP-TP
Schottky barrier rectifierThe PMEG3020EP-TP is a schottky barrier rectifier from Nexperia. View the full PMEG3020EP-TP datasheet below including key specifications, pinout.
Official PMEG3020EP-TP datasheet (PDF) — the source this page was extracted from.
PMEG3020EP-TP Key Specifications
| Parameter | Value |
|---|---|
| Forward Voltage (VF) | 310 mV (typ) to 360 mV (max) at IF=2A, Tj=25°C |
| Reverse Current (IR) | 1 mA (typ) to 3 mA (max) at VR=30V, Tj=25°C |
| Reverse Voltage (VR) | 30 V |
| Operating Temperature Range | -55 °C to 15 |
| Total Power Dissipation (Ptot) | 2.1 W (max) |
| Average Forward Current (IF(AV)) | 2 A |
PMEG3020EP-TP Overview
Part: PMEG3020EP — Nexperia
Type: Schottky barrier rectifier
Description: 30 V, 2 A low VF Schottky barrier rectifier with an integrated guard ring, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Operating Conditions:
- Operating temperature: -55 to 150 °C
- Max average forward current: 2 A (T amb ≤ 110 °C or T sp ≤ 140 °C)
- Max reverse voltage: 30 V
Absolute Maximum Ratings:
- Max supply voltage: 30 V (Reverse voltage VR)
- Max continuous current: 2 A (Average forward current IF(AV))
- Max junction/storage temperature: 150 °C
Key Specs:
- Forward voltage (VF): 310 mV (Typ) / 360 mV (Max) at IF = 2 A, Tj = 25 °C
- Reverse current (IR): 1 mA (Typ) / 3 mA (Max) at VR = 30 V, Tj = 25 °C
- Diode capacitance (Cd): 325 pF (Typ) at VR = 1 V, f = 1 MHz, Tj = 25 °C
- Diode capacitance (Cd): 110 pF (Typ) at VR = 10 V, f = 1 MHz, Tj = 25 °C
- Non-repetitive peak forward current (IFSM): 50 A (t p = 8 ms; square wave; T j(init) = 25 °C)
- Thermal resistance from junction to solder point (Rth(j-sp)): 12 K/W (Max)
Features:
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- Small and flat lead SMD plastic package
- Suitable for both reflow and wave soldering
Applications:
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
Package:
- CFP5 (SOD128) - 2 terminals; 3.8 mm x 2.6 mm x 1 mm body
PMEG3020EP-TP Features
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- Small and flat lead SMD plastic package
- Suitable for both reflow and wave soldering
PMEG3020EP-TP Applications
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
PMEG3020EP-TP Pin Configuration
PMEG3020EP-TP — SOD128 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | K | – | Cathode (marked with bar) |
| 2 | A | – | Anode |
Notes
- This is a 2-terminal Schottky barrier rectifier diode in a SOD128 (CFP5) surface-mounted package.
- Pin 1 (Cathode) is identified by a marking bar on the device body.
- Rated for 30 V reverse voltage and 2 A average forward current.
- Low forward voltage: typical 310 mV @ IF = 2 A, TJ = 25 °C.
PMEG3020EP-TP Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1] [2] | - | - | 200 | K/W |
| R th(j-a) | thermal resistance from junction to ambient | [3] [2] | - | - | 120 | K/W | |
| R th(j-a) | thermal resistance from junction to ambient | [4] [2] | - | - | 60 | K/W | |
| R th(j-sp) | thermal resistance from junction to solder point | [5] | - | - | 12 | K/W |
- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
- [2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
- [4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
- [5] Soldering point of cathode tab.
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020EP-TP Package Information
PMEG3020EP-TP Ordering Information
No ordering information found in the provided section.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| PMEG3020EP | Nexperia | SOD128 |
Other Diodes
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- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
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