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PMEG3020EP-TP

Schottky barrier rectifier

The PMEG3020EP-TP is a schottky barrier rectifier from Nexperia. View the full PMEG3020EP-TP datasheet below including key specifications, pinout.

Official PMEG3020EP-TP datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

CFP5 (SOD128)

PMEG3020EP-TP Key Specifications

ParameterValue
Forward Voltage (VF)310 mV (typ) to 360 mV (max) at IF=2A, Tj=25°C
Reverse Current (IR)1 mA (typ) to 3 mA (max) at VR=30V, Tj=25°C
Reverse Voltage (VR)30 V
Operating Temperature Range-55 °C to 15
Total Power Dissipation (Ptot)2.1 W (max)
Average Forward Current (IF(AV))2 A

PMEG3020EP-TP Overview

Part: PMEG3020EP — Nexperia

Type: Schottky barrier rectifier

Description: 30 V, 2 A low VF Schottky barrier rectifier with an integrated guard ring, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

Operating Conditions:

  • Operating temperature: -55 to 150 °C
  • Max average forward current: 2 A (T amb ≤ 110 °C or T sp ≤ 140 °C)
  • Max reverse voltage: 30 V

Absolute Maximum Ratings:

  • Max supply voltage: 30 V (Reverse voltage VR)
  • Max continuous current: 2 A (Average forward current IF(AV))
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Forward voltage (VF): 310 mV (Typ) / 360 mV (Max) at IF = 2 A, Tj = 25 °C
  • Reverse current (IR): 1 mA (Typ) / 3 mA (Max) at VR = 30 V, Tj = 25 °C
  • Diode capacitance (Cd): 325 pF (Typ) at VR = 1 V, f = 1 MHz, Tj = 25 °C
  • Diode capacitance (Cd): 110 pF (Typ) at VR = 10 V, f = 1 MHz, Tj = 25 °C
  • Non-repetitive peak forward current (IFSM): 50 A (t p = 8 ms; square wave; T j(init) = 25 °C)
  • Thermal resistance from junction to solder point (Rth(j-sp)): 12 K/W (Max)

Features:

  • Average forward current: IF(AV) ≤ 2 A
  • Reverse voltage: VR ≤ 30 V
  • Low forward voltage
  • High power capability due to clip-bond technology
  • Small and flat lead SMD plastic package
  • Suitable for both reflow and wave soldering

Applications:

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch Mode Power Supply (SMPS)
  • Reverse polarity protection
  • Low power consumption applications

Package:

  • CFP5 (SOD128) - 2 terminals; 3.8 mm x 2.6 mm x 1 mm body

PMEG3020EP-TP Features

  • Average forward current: IF(AV) ≤ 2 A
  • Reverse voltage: VR ≤ 30 V
  • Low forward voltage
  • High power capability due to clip-bond technology
  • Small and flat lead SMD plastic package
  • Suitable for both reflow and wave soldering

PMEG3020EP-TP Applications

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch Mode Power Supply (SMPS)
  • Reverse polarity protection
  • Low power consumption applications

PMEG3020EP-TP Pin Configuration

PMEG3020EP-TP — SOD128 Package

Pin NumberPin NameTypeDescription
1K–Cathode (marked with bar)
2A–Anode

Notes

  • This is a 2-terminal Schottky barrier rectifier diode in a SOD128 (CFP5) surface-mounted package.
  • Pin 1 (Cathode) is identified by a marking bar on the device body.
  • Rated for 30 V reverse voltage and 2 A average forward current.
  • Low forward voltage: typical 310 mV @ IF = 2 A, TJ = 25 °C.

PMEG3020EP-TP Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1] [2]--200K/W
R th(j-a)thermal resistance from junction to ambient[3] [2]--120K/W
R th(j-a)thermal resistance from junction to ambient[4] [2]--60K/W
R th(j-sp)thermal resistance from junction to solder point[5]--12K/W
  • [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
  • [2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.
  • [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
  • [4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
  • [5] Soldering point of cathode tab.

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMEG3020EP-TP Package Information

PMEG3020EP-TP Ordering Information

No ordering information found in the provided section.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
PMEG3020EPNexperiaSOD128

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  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll Nexperia datasheets (54)

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