PMEG3020EP-TP
Schottky barrier rectifierThe PMEG3020EP-TP is a schottky barrier rectifier from Nexperia. View the full PMEG3020EP-TP datasheet below including key specifications, pinout.
Manufacturer
Nexperia
Category
Schottky barrier rectifier
Package
CFP5 (SOD128)
Key Specifications
| Parameter | Value |
|---|---|
| Forward Voltage (VF) | 310 mV (typ) to 360 mV (max) at IF=2A, Tj=25°C |
| Reverse Current (IR) | 1 mA (typ) to 3 mA (max) at VR=30V, Tj=25°C |
| Reverse Voltage (VR) | 30 V |
| Operating Temperature Range | -55 °C to 15 |
| Total Power Dissipation (Ptot) | 2.1 W (max) |
| Average Forward Current (IF(AV)) | 2 A |
Overview
Part: PMEG3020EP — Nexperia
Type: Schottky barrier rectifier
Description: 30 V, 2 A low VF Schottky barrier rectifier with an integrated guard ring, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Operating Conditions:
- Operating temperature: -55 to 150 °C
- Max average forward current: 2 A (T amb ≤ 110 °C or T sp ≤ 140 °C)
- Max reverse voltage: 30 V
Absolute Maximum Ratings:
- Max supply voltage: 30 V (Reverse voltage VR)
- Max continuous current: 2 A (Average forward current IF(AV))
- Max junction/storage temperature: 150 °C
Key Specs:
- Forward voltage (VF): 310 mV (Typ) / 360 mV (Max) at IF = 2 A, Tj = 25 °C
- Reverse current (IR): 1 mA (Typ) / 3 mA (Max) at VR = 30 V, Tj = 25 °C
- Diode capacitance (Cd): 325 pF (Typ) at VR = 1 V, f = 1 MHz, Tj = 25 °C
- Diode capacitance (Cd): 110 pF (Typ) at VR = 10 V, f = 1 MHz, Tj = 25 °C
- Non-repetitive peak forward current (IFSM): 50 A (t p = 8 ms; square wave; T j(init) = 25 °C)
- Thermal resistance from junction to solder point (Rth(j-sp)): 12 K/W (Max)
Features:
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- Small and flat lead SMD plastic package
- Suitable for both reflow and wave soldering
Applications:
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
Package:
- CFP5 (SOD128) - 2 terminals; 3.8 mm x 2.6 mm x 1 mm body
Features
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- Small and flat lead SMD plastic package
- Suitable for both reflow and wave soldering
Applications
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
Pin Configuration
PMEG3020EP-TP — SOD128 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | K | – | Cathode (marked with bar) |
| 2 | A | – | Anode |
Notes
- This is a 2-terminal Schottky barrier rectifier diode in a SOD128 (CFP5) surface-mounted package.
- Pin 1 (Cathode) is identified by a marking bar on the device body.
- Rated for 30 V reverse voltage and 2 A average forward current.
- Low forward voltage: typical 310 mV @ IF = 2 A, TJ = 25 °C.
Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1] [2] | - | - | 200 | K/W |
| R th(j-a) | thermal resistance from junction to ambient | [3] [2] | - | - | 120 | K/W | |
| R th(j-a) | thermal resistance from junction to ambient | [4] [2] | - | - | 60 | K/W | |
| R th(j-sp) | thermal resistance from junction to solder point | [5] | - | - | 12 | K/W |
- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
- [2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
- [4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
- [5] Soldering point of cathode tab.
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Package Information
Ordering Information
No ordering information found in the provided section.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| PMEG3020EP | Nexperia | SOD128 |
Get structured datasheet data via API
Get started free