PESD5V0L4UY
The PESD5V0L4UY is an electronic component. View the full PESD5V0L4UY datasheet below including specifications and datasheet sections.
Overview
Part: PESD5V0L4U series — Nexperia
Type: Unidirectional Quadruple ESD Protection Diode Array
Description: Low capacitance unidirectional quadruple ESD protection diode arrays designed to protect up to four signal lines from the damage caused by ESD and other transients, offering 30 W peak pulse power and 12 V clamping voltage.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -65 to 150 °C
- Reverse standoff voltage (PESD5V0L4U variants): 5 V
Absolute Maximum Ratings:
- Max peak pulse power (PPP): 30 W (tp = 8/20 μs)
- Max peak pulse current (IPP, PESD5V0L4U variants): 2.5 A (tp = 8/20 μs)
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
- Max ESD voltage (IEC 61000-4-2 contact discharge): 20 kV
Key Specs:
- Reverse standoff voltage (VRWM, PESD5V0L4U variants): 5.0 V
- Reverse leakage current (IRM, PESD5V0L4U variants): 5 nA (Typ, VRWM = 5.0 V)
- Breakdown voltage (VBR, PESD5V0L4U variants): 6.46 V (Min, IR = 1 mA)
- Diode capacitance (Cd, PESD5V0L4U variants): 16 pF (Typ, f = 1 MHz; VR = 0 V)
- Clamping voltage (VCL, PESD5V0L4U variants): 13 V (Max, IPP = 2.5 A)
- Differential resistance (r dif, PESD5V0L4U variants): 100 Ω (Max, IR = 1 mA)
- ESD protection: > 15 kV (air), > 8 kV (contact) per IEC 61000-4-2; level 4
- Non-repetitive peak reverse power dissipation (PZSM): 6 W (square wave; tp = 1 ms)
Features:
- ESD protection of up to four lines
- Low diode capacitance
- Max. peak pulse power: PPP = 30 W
- Low clamping voltage: VCL = 12 V
- Ultra low leakage current: IRM = 5 nA
- ESD protection up to 20 kV
- IEC 61000-4-2; level 4 (ESD)
- IEC 61000-4-5 (surge); IPP = 2.5 A
Applications:
- Computers and peripherals
- Audio and video equipment
- Cellular handsets and accessories
- Communication systems
- Portable electronics
- Subscriber Identity Module (SIM) card protection
Package:
- SOT886 (XSON6)
- SOT353 (SC-88A)
- SOT665
Features
- n ESD protection of up to four lines
- n Low diode capacitance
- n Max. peak pulse power: PPP = 30 W
- n Low clamping voltage: VCL = 12 V
Applications
- n Computers and peripherals
- n Audio and video equipment
- n Cellular handsets and accessories
- n Ultra low leakage current: IRM = 5 nA
- n ESD protection up to 20 kV
- n IEC 61000-4-2; level 4 (ESD)
- n IEC 61000-4-5 (surge); IPP = 2.5 A
- n Communication systems
- n Portable electronics
- n Subscriber Identity Module (SIM) card protection
Low capacitance unidirectional quadruple ESD protection diode arrays
Typical Application
The devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability of 30 W per line for an 8/20 μ s waveform each.
Package Information
Low capacitance unidirectional quadruple ESD protection diode arrays
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| PESD3V3L4UF | Nexperia | — |
| PESD3V3L4UG | Nexperia | — |
| PESD3V3L4UW | Nexperia | — |
| PESD5V0L4UF | Nexperia | — |
| PESD5V0L4UG | Nexperia | — |
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