PAM8302AASCR
Class-D Mono Audio AmplifierThe PAM8302AASCR is a class-d mono audio amplifier from Diodes Incorporated. View the full PAM8302AASCR datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Diodes Incorporated
Category
Class-D Mono Audio Amplifier
Overview
Part: PAM8302A from Diodes Incorporated
Type: Class-D Mono Audio Amplifier
Description: 2.0–5.5 V input, 2.5 W Class-D mono audio amplifier with filterless architecture, up to 88% peak efficiency, and low THD+N.
Operating Conditions:
- Supply voltage: 2.0 to 5.5 V
- Operation temperature: -40 to +85 °C
- Junction temperature: -40 to +125 °C
Absolute Maximum Ratings:
- Max supply voltage: 6.0 V
- Max junction temperature: +150 °C
- Max storage temperature: -65 to +150 °C
Key Specs:
- Output Power (V DD = 5V, R L = 4Ω, THD+N = 10%): 2.50 W (Typ)
- Output Power (V DD = 3.6V, R L = 4Ω, THD+N = 10%): 1.25 W (Typ)
- Peak Efficiency (f = 1kHz): 85% (Typ), 88% (Max)
- Quiescent Current (No Load): 4 mA (Typ), 8 mA (Max)
- Shutdown Current (V SHDN = 0V): 1 μA (Max)
- Total Harmonic Distortion Plus Noise (R L = 4Ω, P O = 0.5W, f = 1kHz): 0.40% (Typ), 0.45% (Max)
- Power Supply Ripple Rejection (No Inputs, f = 1kHz, V PP = 200mV): 50 dB (Typ)
- Oscillator Frequency: 250 kHz (Typ)
Features:
- 2.5W Output at 10% THD with a 4Ω Load and 5V Power Supply
- Filterless, Low Quiescent Current and Low EMI
- High Efficiency up to 88%
- Superior Low Noise
- Short Circuit Protection
- Thermal Shutdown
- Few External Components to Save Space and Cost
- MSOP-8, SO-8 and U-DFN3030-8 (Type E) Packages Available
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Applications:
- PMP/MP4
- GPS
- Portable Speakers
- 2-Way Radios
- Hands-Free Phones/Speaker Phones
- Cellular Phones
Package:
- MSOP-8
- SO-8
- U-DFN3030-8 (Type E)
Features
- 2.5W Output at 10% THD with a 4Ω Load and 5V Power Supply
- Filterless, Low Quiescent Current and Low EMI
- High Efficiency up to 88%
- Superior Low Noise
- Short Circuit Protection
- Thermal Shutdown
- Few External Components to Save Space and Cost
- MSOP-8, SO-8 and U-DFN3030-8 (Type E) Packages Available
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
Applications
- PMP/MP4
- GPS
- Portable Speakers
- 2-Way Radios
- Hands-Free Phones/Speaker Phones
- Cellular Phones
Pin Configuration
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Supply Voltage Range | V DD | - | - | 2.0 | - | 5.5 | V |
| Quiescent Current | I Q | No Load | No Load | - | 4 | 8 | mA |
| Shutdown Current | I SHDN | V SHDN = 0V | V SHDN = 0V | - | - | 1 | μA |
| Output Power | P O | f = 1kHz, R L = 4Ω, THD+N = 10% | V DD = 5V | 2.25 | 2.50 | - | |
| Output Power | P O | f = 1kHz, R L = 4Ω, THD+N = 10% | V DD = 3.6V | 1.10 | 1.25 | - | |
| Output Power | P O | f = 1kHz, R L = 4Ω, THD+N = 1% | V DD = 5V | 1.80 | 2.00 | - | |
| Output Power | P O | f = 1kHz, R L = 4Ω, THD+N = 1% | V DD = 3.6V | 0.86 | 0.95 | - | |
| Output Power | P O | f = 1kHz, R L = 8Ω, THD+N = 10% | V DD = 5V | 1.35 | 1.50 | - | W |
| Output Power | P O | f = 1kHz, R L = 8Ω, THD+N = 10% | V DD = 3.6V | 0.72 | 0.80 | - | |
| Output Power | P O | f = 1kHz, R L = 8Ω, | V DD = 5V | 1.15 | 1.30 | - | |
| Output Power | P O | f = 1kHz, R L = 8Ω, | V DD = 3.6V | 0.6 | 0.65 | - | |
| Peak Efficiency | η | f = 1kHz | f = 1kHz | - | 85 | 88 | % |
| Total Harmonic Distortion Plus Noise | THD+N | RL = 8Ω, P O = 0.1W, f = 1kHz | RL = 8Ω, P O = 0.1W, f = 1kHz | - | 0.30 | 0.35 | % |
| Total Harmonic Distortion Plus Noise | THD+N | RL = 8Ω, P O = 0.5W, f = 1kHz | RL = 8Ω, P O = 0.5W, f = 1kHz | - | 0.45 | 0.50 | % |
| Total Harmonic Distortion Plus Noise | THD+N | RL = 4Ω, P O = 0.1W, f = 1kHz | RL = 4Ω, P O = 0.1W, f = 1kHz | - | 0.35 | 0.40 | % |
| Total Harmonic Distortion Plus Noise | THD+N | RL = 4Ω, P O = 0.5W, f = 1kHz | RL = 4Ω, P O = 0.5W, f = 1kHz | - | 0.40 | 0.45 | % |
| Gain | GV | - | - | - | 23.5 | - | dB |
| Power Supply Ripple Rejection | PSRR | No Inputs, f = 1kHz, V PP = 200mV | No Inputs, f = 1kHz, V PP = 200mV | 45 | 50 | - | dB |
| Dynamic Range | DYN | f = 20 to 20kHz | f = 20 to 20kHz | 85 | 90 | - | dB |
| Signal to Noise Ratio | SNR | f = 20 to 20kHz | f = 20 to 20kHz | 75 | 80 | - | dB |
| Noise | V N | No A-Weighting | No A-Weighting | - | 180 | 300 | μV |
| Noise | V N | A-Weighting | A-Weighting | - | 120 | 200 | |
| Oscillator Frequency | f OSC | - | - | 200 | 250 | 300 | kHz |
| Drain-Source On-State Resistance | R DS(ON) | I DS = 100mA | P MOSFET | - | 0.45 | 0.50 | Ω |
| Drain-Source On-State Resistance | R DS(ON) | I DS = 100mA | N MOSFET | - | 0.20 | 0.25 | Ω |
| SHD Input High | V SH | - | - | 1.2 | - | - | V |
| SHD Input Low | V SL | - | - | - | - | 0.4 | |
| Over Temperature Protection | OTP | Junction Temperature | Junction Temperature | +120 | +135 | - | ° C |
| Over Temperature Hysteresis | OTH | - | - | - | +30 | - | ° C |
PAM8302A
Absolute Maximum Ratings
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.
| Parameter | Rating | Unit |
|---|---|---|
| Supply Voltage at No Input Signal | 6.0 | V |
| Input Voltage | -0.3 to V DD +0.3 | V |
| Maximum Junction Temperature | +150 | ° C |
| Storage Temperature | -65 to +150 | ° C |
| Soldering Temperature | +300, 5s | ° C |
Recommended Operating Conditions
| Parameter | Rating | Unit |
|---|---|---|
| Supply Voltage Range | 2.0 to 5.5 | V |
| Operation Temperature Range | -40 to +85 | ° C |
| Junction Temperature Range | -40 to +125 | ° C |
Thermal Information
| Parameter | Package | Symbol | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance (Junction to Ambient) | SO-8 | θ JA | 115 | ° C/W |
| Thermal Resistance (Junction to Ambient) | MSOP-8 | θ JA | 180 | ° C/W |
| Thermal Resistance (Junction to Ambient) | U-DFN3030-8 (Type E) | θ JA | 47.9 | ° C/W |
Typical Application
Package Information
Please see http://www.diodes.com/package-outlines.html for the latest version.
MSOP-8
Detail C
| MSOP-8 | MSOP-8 | MSOP-8 | MSOP-8 |
|---|---|---|---|
| Dim | Min | Max | Typ |
| A | - | 1.10 | - |
| A1 | 0.05 | 0.15 | 0.10 |
| A2 | 0.75 | 0.95 | 0.86 |
| A3 | 0.29 | 0.49 | 0.39 |
| b | 0.22 | 0.38 | 0.30 |
| c | 0.08 | 0.23 | 0.15 |
| D | 2.90 | 3.10 | 3.00 |
| E | 4.70 | 5.10 | 4.90 |
| E1 | 2.90 | 3.10 | 3.00 |
| E3 | 2.85 | 3.05 | 2.95 |
| e | - | - | 0.65 |
| L | 0.40 | 0.80 | 0.60 |
| a | 0° | 8° | 4° |
| x | - | - | 0.750 |
| y | - | - | 0.750 |
| All Dimensions inmm | All Dimensions inmm | All Dimensions inmm | All Dimensions inmm |
| SO-8 | SO-8 | SO-8 | SO-8 |
| Dim | Min | Max | Typ |
| A | 1.40 | 1.50 | 1.45 |
| A1 | 0.10 | 0.20 | 0.15 |
| b | 0.30 | 0.50 | 0.40 |
| c | 0.15 | 0.25 | 0.20 |
| D | 4.85 | 4.95 | 4.90 |
| E | 5.90 | 6.10 | 6.00 |
| E1 | 3.80 | 3.90 | 3.85 |
| E0 | 3.85 | 3.95 | 3.90 |
| e | - | - | 1.27 |
| h | - | - | 0.35 |
| L | 0.62 | 0.82 | 0.72 |
| Q | 0.60 | 0.70 | 0.65 |
| All Dimensions inmm | All Dimensions inmm | All Dimensions inmm | All Dimensions inmm |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| PAM8302A | Diodes Incorporated | — |
| PAM8302AADCR | Diodes Incorporated | — |
| PAM8302AAYCR | Diodes Incorporated | — |
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