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PAM8302AADCR

Class-D Mono Audio Amplifier

The PAM8302AADCR is a class-d mono audio amplifier from Diodes Incorporated. View the full PAM8302AADCR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

PAM8302AADCR shares its datasheet with PAM8302A, whose page lists every part number it covers.

Official PAM8302AADCR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

Class-D Mono Audio Amplifier

PAM8302AADCR Key Specifications

ParameterValue
Output Power (V DD = 5V, R L = 4Ω, THD+N = 10%)2.50 W (Typ)
Output Power (V DD = 3.6V, R L = 4Ω, THD+N = 10%)1.25 W (Typ)
Peak Efficiency (f = 1kHz)85% (Typ), 88% (Max)
Quiescent Current (No Load)4 mA (Typ), 8 mA (Max)
Shutdown Current (V SHDN = 0V)1 μA (Max)
Total Harmonic Distortion Plus Noise (R L = 4Ω, P O = 0.5W, f = 1kHz)0.40% (Typ), 0.45% (Max)
Power Supply Ripple Rejection (No Inputs, f = 1kHz, V PP = 200mV)50 dB (Typ)
Oscillator Frequency250 kHz (Typ)

PAM8302AADCR Overview

Part: PAM8302A from Diodes Incorporated

Type: Class-D Mono Audio Amplifier

Description: 2.0–5.5 V input, 2.5 W Class-D mono audio amplifier with filterless architecture, up to 88% peak efficiency, and low THD+N.

Operating Conditions:

  • Supply voltage: 2.0 to 5.5 V
  • Operation temperature: -40 to +85 °C
  • Junction temperature: -40 to +125 °C

Absolute Maximum Ratings:

  • Max supply voltage: 6.0 V
  • Max junction temperature: +150 °C
  • Max storage temperature: -65 to +150 °C

Key Specs:

  • Output Power (V DD = 5V, R L = 4Ω, THD+N = 10%): 2.50 W (Typ)
  • Output Power (V DD = 3.6V, R L = 4Ω, THD+N = 10%): 1.25 W (Typ)
  • Peak Efficiency (f = 1kHz): 85% (Typ), 88% (Max)
  • Quiescent Current (No Load): 4 mA (Typ), 8 mA (Max)
  • Shutdown Current (V SHDN = 0V): 1 μA (Max)
  • Total Harmonic Distortion Plus Noise (R L = 4Ω, P O = 0.5W, f = 1kHz): 0.40% (Typ), 0.45% (Max)
  • Power Supply Ripple Rejection (No Inputs, f = 1kHz, V PP = 200mV): 50 dB (Typ)
  • Oscillator Frequency: 250 kHz (Typ)

Features:

  • 2.5W Output at 10% THD with a 4Ω Load and 5V Power Supply
  • Filterless, Low Quiescent Current and Low EMI
  • High Efficiency up to 88%
  • Superior Low Noise
  • Short Circuit Protection
  • Thermal Shutdown
  • Few External Components to Save Space and Cost
  • MSOP-8, SO-8 and U-DFN3030-8 (Type E) Packages Available
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. 'Green' Device

Applications:

  • PMP/MP4
  • GPS
  • Portable Speakers
  • 2-Way Radios
  • Hands-Free Phones/Speaker Phones
  • Cellular Phones

Package:

  • MSOP-8
  • SO-8
  • U-DFN3030-8 (Type E)

PAM8302AADCR Features

  • 2.5W Output at 10% THD with a 4Ω Load and 5V Power Supply
  • Filterless, Low Quiescent Current and Low EMI
  • High Efficiency up to 88%
  • Superior Low Noise
  • Short Circuit Protection
  • Thermal Shutdown
  • Few External Components to Save Space and Cost
  • MSOP-8, SO-8 and U-DFN3030-8 (Type E) Packages Available
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

PAM8302AADCR Applications

  • PMP/MP4
  • GPS
  • Portable Speakers
  • 2-Way Radios
  • Hands-Free Phones/Speaker Phones
  • Cellular Phones

PAM8302AADCR Pin Configuration

PAM8302AADCR Electrical Characteristics

ParameterSymbolTest ConditionsTest ConditionsMinTypMaxUnit
Supply Voltage RangeV DD--2.0-5.5V
Quiescent CurrentI QNo LoadNo Load-48mA
Shutdown CurrentI SHDNV SHDN = 0VV SHDN = 0V--1μA
Output PowerP Of = 1kHz, R L = 4Ω, THD+N = 10%V DD = 5V2.252.50-
Output PowerP Of = 1kHz, R L = 4Ω, THD+N = 10%V DD = 3.6V1.101.25-
Output PowerP Of = 1kHz, R L = 4Ω, THD+N = 1%V DD = 5V1.802.00-
Output PowerP Of = 1kHz, R L = 4Ω, THD+N = 1%V DD = 3.6V0.860.95-
Output PowerP Of = 1kHz, R L = 8Ω, THD+N = 10%V DD = 5V1.351.50-W
Output PowerP Of = 1kHz, R L = 8Ω, THD+N = 10%V DD = 3.6V0.720.80-
Output PowerP Of = 1kHz, R L = 8Ω,V DD = 5V1.151.30-
Output PowerP Of = 1kHz, R L = 8Ω,V DD = 3.6V0.60.65-
Peak Efficiencyηf = 1kHzf = 1kHz-8588%
Total Harmonic Distortion Plus NoiseTHD+NRL = 8Ω, P O = 0.1W, f = 1kHzRL = 8Ω, P O = 0.1W, f = 1kHz-0.300.35%
Total Harmonic Distortion Plus NoiseTHD+NRL = 8Ω, P O = 0.5W, f = 1kHzRL = 8Ω, P O = 0.5W, f = 1kHz-0.450.50%
Total Harmonic Distortion Plus NoiseTHD+NRL = 4Ω, P O = 0.1W, f = 1kHzRL = 4Ω, P O = 0.1W, f = 1kHz-0.350.40%
Total Harmonic Distortion Plus NoiseTHD+NRL = 4Ω, P O = 0.5W, f = 1kHzRL = 4Ω, P O = 0.5W, f = 1kHz-0.400.45%
GainGV---23.5-dB
Power Supply Ripple RejectionPSRRNo Inputs, f = 1kHz, V PP = 200mVNo Inputs, f = 1kHz, V PP = 200mV4550-dB
Dynamic RangeDYNf = 20 to 20kHzf = 20 to 20kHz8590-dB
Signal to Noise RatioSNRf = 20 to 20kHzf = 20 to 20kHz7580-dB
NoiseV NNo A-WeightingNo A-Weighting-180300μV
NoiseV NA-WeightingA-Weighting-120200
Oscillator Frequencyf OSC--200250300kHz
Drain-Source On-State ResistanceR DS(ON)I DS = 100mAP MOSFET-0.450.50Ω
Drain-Source On-State ResistanceR DS(ON)I DS = 100mAN MOSFET-0.200.25Ω
SHD Input HighV SH--1.2--V
SHD Input LowV SL----0.4
Over Temperature ProtectionOTPJunction TemperatureJunction Temperature+120+135-° C
Over Temperature HysteresisOTH---+30-° C

PAM8302A

PAM8302AADCR Absolute Maximum Ratings

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

ParameterRatingUnit
Supply Voltage at No Input Signal6.0V
Input Voltage-0.3 to V DD +0.3V
Maximum Junction Temperature+150° C
Storage Temperature-65 to +150° C
Soldering Temperature+300, 5s° C

PAM8302AADCR Recommended Operating Conditions

ParameterRatingUnit
Supply Voltage Range2.0 to 5.5V
Operation Temperature Range-40 to +85° C
Junction Temperature Range-40 to +125° C

PAM8302AADCR Thermal Information

ParameterPackageSymbolMaxUnit
Thermal Resistance (Junction to Ambient)SO-8θ JA115° C/W
Thermal Resistance (Junction to Ambient)MSOP-8θ JA180° C/W
Thermal Resistance (Junction to Ambient)U-DFN3030-8 (Type E)θ JA47.9° C/W

PAM8302AADCR Typical Application

PAM8302AADCR Package Information

Please see http://www.diodes.com/package-outlines.html for the latest version.

MSOP-8

Detail C

MSOP-8MSOP-8MSOP-8MSOP-8
DimMinMaxTyp
A-1.10-
A10.050.150.10
A20.750.950.86
A30.290.490.39
b0.220.380.30
c0.080.230.15
D2.903.103.00
E4.705.104.90
E12.903.103.00
E32.853.052.95
e--0.65
L0.400.800.60
a0°8°4°
x--0.750
y--0.750
All Dimensions inmmAll Dimensions inmmAll Dimensions inmmAll Dimensions inmm
SO-8SO-8SO-8SO-8
DimMinMaxTyp
A1.401.501.45
A10.100.200.15
b0.300.500.40
c0.150.250.20
D4.854.954.90
E5.906.106.00
E13.803.903.85
E03.853.953.90
e--1.27
h--0.35
L0.620.820.72
Q0.600.700.65
All Dimensions inmmAll Dimensions inmmAll Dimensions inmmAll Dimensions inmm

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