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NCV8161BSN330T1G

Low-Dropout Linear Regulator

The NCV8161BSN330T1G is a low-dropout linear regulator from onsemi. View the full NCV8161BSN330T1G datasheet below including key specifications, absolute maximum ratings.

NCV8161BSN330T1G shares its datasheet with NCV8161AMX280TBG, whose page lists every part number it covers.

Official NCV8161BSN330T1G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

Low-Dropout Linear Regulator

NCV8161BSN330T1G Key Specifications

ParameterValue
China RoHSCompliant
Control FeaturesEnable
Output Current450mA
Quiescent Current23 µA
Dropout Voltage290 mV
GradeAutomotive
Height - Seated (Max)430 µm
Introduction Date2016-11-08
Length1 mm
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
Max Input Voltage5.5 V
Max Junction Temperature (Tj)125 °C
Max Operating Temperature125 °C
Max Output Voltage2.856 V
Min Input Voltage3.8 V
Min Operating Temperature-40 °C
Min Output Voltage2.744 V
Mounting TypeSurface Mount
Number of Channels1
Number of Circuits1
Number of Outputs1
Number of Regulators1
Number of Terminals4
Operating Temperature-40°C ~ 125°C (TA)
Output ConfigurationPositive
Output Current450 mA
Output TypeFixed
Output TypeFixed
Output Voltage2.8 V
Package / Case4-XDFN Exposed Pad
PackagingMouseReel
PackagingCut Tape
Protection FeaturesOver Current, Over Temperature
PSRR91dB ~ 48dB (100Hz ~ 100kHz)
QualificationAEC-Q100
RatingsAEC-Q100
REACH SVHCUnaffected
RoHSCompliant
Schedule B8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000
Standard Pack Qty5000
Supplier Device Package4-XDFN (1x1)
Terminal Pitch650 µm
Input Voltage (Max)5.5V
Output Voltage2.8V
Dropout Voltage0.29V @ 450mA
Voltage Tolerance2 %
Width1 mm

NCV8161BSN330T1G Overview

Part: NCV8161AMX280TBG — ON Semiconductor (onsemi)

Type: Low-Dropout (LDO) Linear Regulator, Ultra-Low Noise, High PSRR

Description: 450 mA LDO with 1.9–5.5 V input, ±2% output accuracy, 18 μA typical quiescent current, 98 dB PSRR (1 kHz, 20 mA), and about 10 μVRMS output noise; this variant is a 2.8 V fixed output in an XDFN4 package with active output discharge.

Operating Conditions:

  • Supply voltage: 1.9–5.5 V
  • Operating junction temperature: -40 to 125 °C
  • Output current: up to 450 mA
  • Fixed output voltage of this variant: 2.8 V

Absolute Maximum Ratings:

  • Max input voltage: 6 V (-0.3 to 6 V)
  • Max output voltage: V_IN + 0.3 V, max 6 V
  • Max junction temperature: 150 °C
  • Storage temperature: -55 to 150 °C

Key Specs:

  • Output voltage accuracy: ±2% over -40 °C ≤ T_J ≤ 125 °C
  • Dropout voltage (XDFN4, V_OUT = 2.8 V, I_OUT = 450 mA): 195 mV typ, 290 mV max
  • Quiescent current (I_OUT = 0 mA): 18 μA typ, 23 μA max
  • Shutdown current (V_EN ≤ 0.4 V, V_IN = 4.8 V): 0.01 μA typ, 1 μA max
  • Output current limit: 450 mA min, 700 mA typ; short-circuit current 690 mA typ
  • PSRR (I_OUT = 20 mA): 91 dB at 100 Hz, 98 dB at 1 kHz, 82 dB at 10 kHz, 48 dB at 100 kHz
  • Output noise (10 Hz–100 kHz): 14 μVRMS at 1 mA, 10 μVRMS at 250 mA
  • Line regulation 0.02 %/V typ; load regulation (XDFN4) 0.001 %/mA typ
  • Turn-on time: 120 μs typ (C_OUT = 1 μF)
  • Active discharge resistance: 280 Ω typ
  • Thermal shutdown: 160 °C rising, 140 °C falling

Features:

  • Fixed output voltage options from 1.8 V to 5.14 V
  • Stable with 1 μF ceramic input and output capacitors
  • Active output discharge function (A version)
  • Current limit, short-circuit and thermal shutdown protection
  • Enable pin with internal pull-down (0.2 μA typ)
  • AEC-Q100 qualified, PPAP capable, Grade 1 (-40 to +125 °C ambient)
  • Pb-free, halogen free/BFR free, RoHS compliant

Applications:

  • Wireless handsets, wireless LAN, Bluetooth, Zigbee
  • Parking camera modules
  • Automotive infotainment systems
  • Other battery-powered applications

Package:

  • XDFN4 (Case 711AJ), junction-to-air thermal resistance 198 °C/W
  • Also offered in TSOP-5 (Case 483) in other variants

NCV8161BSN330T1G Features

  • Available in Fixed Voltage Option: 1.8 V to 5.14 V
  • Operating Input Voltage Range: 1.9 V to 5.5 V
  • ± 2% Accuracy Over Temperature
  • Standby Current: Typ. 0.1 m A
  • Ultra Low Quiescent Current Typ. 18 m A
  • Very Low Dropout: 225 mV at 450 mA
  • Ultra Low Noise: 10 m VRMS
  • Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz
  • Stable with a 1 m F Small Case Size Ceramic Capacitors
  • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable; Device Temperature Grade 1: -40 ° C to +125 ° C Ambient Operating Temperature Range
  • Available in TSOP -5 and XDFN4 Packages
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

NCV8161BSN330T1G Applications

  • Wireless Handsets, Wireless LAN, Bluetooth , Zigbee
  • Parking Camera Modules
  • Automotive Infotainment Systems
  • Other Battery Powered Applications

Figure 1. Typical Application Schematic

NCV8161BSN330T1G Pin Configuration

Pin No. TSOP - 5Pin No. XDFN4Pin NameDescription
14INInput voltage supply pin
51OUTRegulated output voltage. The output should be bypassed with small 1 m F ceramic capacitor.
33ENChip enable: Applying V EN < 0.4 V disables the regulator, Pulling V EN > 1.2 V enables the LDO.
22GNDCommon ground connection
4-N/CNot connected. This pin can be tied to ground to improve thermal dissipation.
-EPEPADExposed Pad. Exposed pad can be tied to ground plane for better power dissipation.

NCV8161BSN330T1G Absolute Maximum Ratings

RatingSymbolValueUnit
Input Voltage (Note 1)V IN- 0.3 V to 6V
Output VoltageV OUT- 0.3 to V IN + 0.3, max. 6 VV
Chip Enable InputV CE- 0.3 to V IN + 0.3, max. 6 VV
Output Short Circuit Durationt SCunlimiteds
Operating Ambient Temperature RangeT A- 40 to +125° C
Maximum Junction TemperatureT J150° C
Storage Temperature RangeT STG- 55 to 150° C
ESD Capability, Human Body Model (Note 2)ESD HBM2000V
ESD Capability, Machine Model (Note 2)ESD MM200V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

  1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

  2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per EIA/JESD22

A114

ESD Machine Model tested per EIA/JESD22 -A115

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

ParameterSymbolMinMaxUnit
Input VoltageV IN1.95.5V
Junction TemperatureT J- 40125° C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS -40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 1 V; I OUT = 1 mA, C IN = C OUT = 1 m F, unless otherwise noted. V EN = 1.2 V. Typical values are at T J = +25 ° C (Note 4).

ParameterTest ConditionsTest ConditionsSymbolMinTypMaxUnit
Operating Input VoltageV IN1.95.5V
Output Voltage Accuracy- 40 ° C ≤ T J ≤ 125 ° C- 40 ° C ≤ T J ≤ 125 ° CV OUT- 2+2%
Line RegulationV OUT(NOM) + 1 V ≤ V IN ≤ 5.5 VV OUT(NOM) + 1 V ≤ V IN ≤ 5.5 VLine Reg0.02%/V
Load RegulationI OUT = 1 mA to 450 mAXDFN4
TSOP - 5
Load Reg0.001
0.005
0.005
0.008
%/mA
Dropout Voltage (Note 5)I OUT = 450 mA (XDFN4)V OUT(NOM) = 1.8 V325450
VOUT(NOM) = 2.8 V195290
VOUT(NOM) = 3.0 VV DO185275mV
VOUT(NOM) = 3.3 V175260
Dropout Voltage (Note 5)I OUT = 450 mAV OUT(NOM) = 1.8 V365480
(TSOP - 5)V OUT(NOM) = 2.8 V260345
V OUT(NOM) = 3.0 VV DO240330mV
VOUT(NOM) = 3.3 V225305
Output Current LimitV OUT = 90% V OUT(NOM)V OUT = 90% V OUT(NOM)I CL450700
Short Circuit CurrentV OUT = 0 VV OUT = 0 VI SC690mA
Quiescent CurrentI OUT = 0 mAI OUT = 0 mAI Q1823m A
Shutdown CurrentV EN ≤ 0.4 V, V IN = 4.8 VV EN ≤ 0.4 V, V IN = 4.8 VI DIS0.011m A
EN Pin Threshold VoltageEN Input Voltage 'H'EN Input Voltage 'H'V ENH1.2
EN Input Voltage 'L'EN Input Voltage 'L'V ENL0.4V
EN Pull Down CurrentV EN = 4.8 VV EN = 4.8 VI EN0.20.5m A
Turn - On TimeC OUT = 1 m F, From assertion of V EN to V OUT = 95% V OUT(NOM)C OUT = 1 m F, From assertion of V EN to V OUT = 95% V OUT(NOM)120m s
Power Supply Rejection RatioI OUT = 20 mAf = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHzPSRR91 98 82 48dB
Output Voltage Noisef = 10 Hz to 100 kHzI OUT = 1 mA I OUT = 250 mAV N14 10m V RMS
Thermal Shutdown ThresholdTemperature risingTemperature risingT SDH160° C
Temperature fallingTemperature fallingT SDL140° C
Active output discharge resistanceV EN < 0.4 V, VersionA onlyV EN < 0.4 V, VersionA onlyR DIS280W
Line transient (Note 6)V IN = (V OUT(NOM) + 1 V) to (V OUT(NOM) + 1.6 V) in 30 m s, I OUT = 1 mAV IN = (V OUT(NOM) + 1 V) to (V OUT(NOM) + 1.6 V) in 30 m s, I OUT = 1 mATran LINE- 1
V IN = (V OUT(NOM) + 1.6 V) to (V OUT(NOM) + 1 V) in 30 m s, I OUT = 1 mAV IN = (V OUT(NOM) + 1.6 V) to (V OUT(NOM) + 1 V) in 30 m s, I OUT = 1 mATran LINE+1mV
Load transient (Note 6)I OUT = 1 mA to 450 mA in 10 m sI OUT = 1 mA to 450 mA in 10 m sTran- 40
I OUT = 450 mA to 1mA in 10 m sI OUT = 450 mA to 1mA in 10 m sLOAD+40mV

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T A = 25 Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.

  2. Dropout voltage is characterized when V OUT falls 100 mV below V OUT(NOM) .

  3. Guaranteed by design.

C.

°

Figure 15. Dropout Voltage vs. Temperature -VOUT = 3.3 V

Figure 17. Short Circuit Current vs. Temperature

Figure 19. Enable Current Temperature

Figure 16. Current Limit vs. Temperature

Figure 18. Enable Threshold Voltage vs. Temperature

Figure 20. Disable Current vs. Temperature

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 22. Output Voltage Noise Spectral Density -V OUT = 1.8 V

Figure 21. Discharge Resistivity vs. Temperature

I OUTRMS Output Noise ( m V) - 10 Hz - 100 kHzRMS Output Noise ( m V) - 100 Hz - 100 kHz
1 mA14.6214.10
10 mA11.1210.48
250 mA10.379.82
450 mA10.229.62

Figure 23. Output Voltage Noise Spectral Density -V OUT = 3.3 V

Figure 21. Discharge Resistivity vs. Temperature

I OUTRMS Output Noise ( m V) - 10 Hz - 100 kHzRMS Output Noise ( m V) - 100 Hz - 100 kHz
1 mA16.915.79
10 mA12.6411.13
250 mA11.9610.64
450 mA11.5010.40

10 ms/div

Figure 36. Short Circuit and Thermal Shutdown

Figure 37. Enable Turn -off

NCV8161BSN330T1G Thermal Information

RatingSymbolValueUnit
Thermal Characteristics, TSOP - 5 (Note 3) Thermal Resistance, Junction - to - AirR q JA218° C/W
Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction - to - AirR q JA198° C/W

NCV8161BSN330T1G Typical Application

  • Wireless Handsets, Wireless LAN, Bluetooth , Zigbee
  • Parking Camera Modules
  • Automotive Infotainment Systems
  • Other Battery Powered Applications

Figure 1. Typical Application Schematic

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
NCV8161onsemi—
NCV8161AMX180TBGonsemi—
NCV8161AMX250TBGonsemi—
NCV8161AMX280TBGonsemi4-XDFN Exposed Pad
NCV8161AMX290TBGonsemi—
NCV8161AMX300TBGonsemi—
NCV8161AMX330TBGonsemi—
NCV8161ASN180T1Gonsemi—
NCV8161ASN280T1Gonsemi—
NCV8161ASN300T1Gonsemi—
NCV8161ASN330T1Gonsemi—
NCV8161BMX180TBGonsemi—
NCV8161BSN180T1Gonsemi—
NCV8161BSN280T1Gonsemi—
NCV8161BSN300T1Gonsemi—

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