NCV8161AMX300TBG

Part: NCV8161AMX280TBG — ON Semiconductor (onsemi)

Type: Low-Dropout (LDO) Linear Regulator, Ultra-Low Noise, High PSRR

Description: 450 mA LDO with 1.9–5.5 V input, ±2% output accuracy, 18 μA typical quiescent current, 98 dB PSRR (1 kHz, 20 mA), and about 10 μVRMS output noise; this variant is a 2.8 V fixed output in an XDFN4 package with active output discharge.

Operating Conditions:

• Supply voltage: 1.9–5.5 V
• Operating junction temperature: -40 to 125 °C
• Output current: up to 450 mA
• Fixed output voltage of this variant: 2.8 V

Absolute Maximum Ratings:

• Max input voltage: 6 V (-0.3 to 6 V)
• Max output voltage: V_IN + 0.3 V, max 6 V
• Max junction temperature: 150 °C
• Storage temperature: -55 to 150 °C

Key Specs:

• Output voltage accuracy: ±2% over -40 °C ≤ T_J ≤ 125 °C
• Dropout voltage (XDFN4, V_OUT = 2.8 V, I_OUT = 450 mA): 195 mV typ, 290 mV max
• Quiescent current (I_OUT = 0 mA): 18 μA typ, 23 μA max
• Shutdown current (V_EN ≤ 0.4 V, V_IN = 4.8 V): 0.01 μA typ, 1 μA max
• Output current limit: 450 mA min, 700 mA typ; short-circuit current 690 mA typ
• PSRR (I_OUT = 20 mA): 91 dB at 100 Hz, 98 dB at 1 kHz, 82 dB at 10 kHz, 48 dB at 100 kHz
• Output noise (10 Hz–100 kHz): 14 μVRMS at 1 mA, 10 μVRMS at 250 mA
• Line regulation 0.02 %/V typ; load regulation (XDFN4) 0.001 %/mA typ
• Turn-on time: 120 μs typ (C_OUT = 1 μF)
• Active discharge resistance: 280 Ω typ
• Thermal shutdown: 160 °C rising, 140 °C falling

Features:

• Fixed output voltage options from 1.8 V to 5.14 V
• Stable with 1 μF ceramic input and output capacitors
• Active output discharge function (A version)
• Current limit, short-circuit and thermal shutdown protection
• Enable pin with internal pull-down (0.2 μA typ)
• AEC-Q100 qualified, PPAP capable, Grade 1 (-40 to +125 °C ambient)
• Pb-free, halogen free/BFR free, RoHS compliant

Applications:

• Wireless handsets, wireless LAN, Bluetooth, Zigbee
• Parking camera modules
• Automotive infotainment systems
• Other battery-powered applications

Package:

• XDFN4 (Case 711AJ), junction-to-air thermal resistance 198 °C/W
• Also offered in TSOP-5 (Case 483) in other variants

• Available in Fixed Voltage Option: 1.8 V to 5.14 V
• Operating Input Voltage Range: 1.9 V to 5.5 V
• ± 2% Accuracy Over Temperature
• Standby Current: Typ. 0.1 m A
• Ultra Low Quiescent Current Typ. 18 m A
• Very Low Dropout: 225 mV at 450 mA
• Ultra Low Noise: 10 m VRMS
• Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz
• Stable with a 1 m F Small Case Size Ceramic Capacitors
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable; Device Temperature Grade 1: -40 ° C to +125 ° C Ambient Operating Temperature Range
• Available in TSOP -5 and XDFN4 Packages
• These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

• Wireless Handsets, Wireless LAN, Bluetooth , Zigbee
• Parking Camera Modules
• Automotive Infotainment Systems
• Other Battery Powered Applications

Figure 1. Typical Application Schematic

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per EIA/JESD22

A114

ESD Machine Model tested per EIA/JESD22 -A115

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS -40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 1 V; I OUT = 1 mA, C IN = C OUT = 1 m F, unless otherwise noted. V EN = 1.2 V. Typical values are at T J = +25 ° C (Note 4).

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T A = 25 Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.

2. Dropout voltage is characterized when V OUT falls 100 mV below V OUT(NOM) .

3. Guaranteed by design.

C.

°

Figure 15. Dropout Voltage vs. Temperature -VOUT = 3.3 V

Figure 17. Short Circuit Current vs. Temperature

Figure 19. Enable Current Temperature

Figure 16. Current Limit vs. Temperature

Figure 18. Enable Threshold Voltage vs. Temperature

Figure 20. Disable Current vs. Temperature

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 22. Output Voltage Noise Spectral Density -V OUT = 1.8 V

Figure 21. Discharge Resistivity vs. Temperature

Figure 23. Output Voltage Noise Spectral Density -V OUT = 3.3 V

Figure 21. Discharge Resistivity vs. Temperature

10 ms/div

Figure 36. Short Circuit and Thermal Shutdown

Figure 37. Enable Turn -off

• Wireless Handsets, Wireless LAN, Bluetooth , Zigbee
• Parking Camera Modules
• Automotive Infotainment Systems
• Other Battery Powered Applications

Figure 1. Typical Application Schematic