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NCP164AMTADJ

LDO Regulator

The NCP164AMTADJ is a ldo regulator from onsemi. View the full NCP164AMTADJ datasheet below including key specifications, absolute maximum ratings.

Manufacturer

onsemi

Category

LDO Regulator

Key Specifications

ParameterValue
PackagingMouseReel
Standard Pack Qty3000

Overview

Part: NCP164 — onsemi

Type: LDO Regulator

Description: The NCP164 is a 300 mA LDO regulator offering ultra-low noise, high PSRR, and a Power Good open collector output, designed for RF and sensitive analog circuits.

Operating Conditions:

  • Supply voltage: 1.6 V to 5.5 V
  • Operating temperature: -40 to +150 °C (Junction)
  • Max output current: 300 mA
  • Output voltage range: 1.2 V to 5 V (fixed), 1.1 V (adjustable reference)

Absolute Maximum Ratings:

  • Max input voltage: 6 V
  • Max Power Good current: 30 mA
  • Max junction temperature: 150 °C
  • Storage temperature: -55 to 150 °C

Key Specs:

  • Output Current Limit: Min. 350 mA
  • Quiescent Current: Typ. 30 μA (I_OUT = 0 mA)
  • Dropout Voltage: Typ. 110 mV at 300 mA (V_OUT(NOM) = 3.3 V)
  • Output Voltage Accuracy: ±2%
  • Power Supply Rejection Ratio: Typ. 85 dB at 10 mA, f = 1 kHz
  • Output Voltage Noise: Typ. 9 μV RMS (Fixed Ver., 10 Hz to 100 kHz, I_OUT = 10 mA)
  • Reference Voltage (Adjustable): Typ. 1.1 V
  • Shutdown Current: Typ. 0.01 μA

Features:

  • Operating Input Voltage Range: 1.6 V to 5.5 V
  • Adjustable Version Reference Voltage: 1.1 V
  • Available in Fixed Voltage Option: 1.2 V to 5 V
  • ±2% Accuracy Over Load and Temperature
  • Ultra Low Quiescent Current Typ. 30 μA
  • Very Low Dropout: 110 mV at 300 mA for 3.3 V Variant
  • Ultra Low Noise: 9 μV RMS (Fixed Version)
  • Ultra High PSRR: Typ. 85 dB at 10 mA, f = 1 kHz
  • Stable with a 1 μF Small Case Size Ceramic Capacitors
  • Power Good open collector output

Applications:

  • In-Vehicle Networking
  • Communication Systems
  • Telematics, Infotainment and Clusters
  • General Purpose Automotive

Package:

  • TSOP-5 (3 mm x 1.5 mm x 1 mm)
  • WDFN6 2 mm x 2 mm x 0.75 mm

Features

  • Operating Input Voltage Range: 1.6 V to 5.5 V
  • ·
  • Adjustable Version Reference Voltage: 1.1 V
  • Available in Fixed Voltage Option: 1.2 V to 5 V
  • ± 2% Accuracy Over Load and Temperature
  • Standby Current: Typ. 0.1 m A
  • Ultra Low Quiescent Current Typ. 30 m A
  • Very Low Dropout: 110 mV at 300 mA for 3.3 V Variant
  • Ultra Low Noise: 9 m VRMS (Fixed Version)
  • Ultra High PSRR: Typ. 85 dB at 10 mA, f = 1 kHz
  • Stable with a 1 m F Small Case Size Ceramic Capacitors
  • Available in - TSOP -5 3 mm x 1.5 mm x 1 mm CASE 483
  • ♦ WDFN6 2 mm x 2 mm x 0.75 mm CASE 511BR
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

  • In -Vehicle Networking
  • Communication Systems
  • Telematics, Infotainment and Clusters
  • General Purpose Automotive

Figure 1. Typical Application Schematic

Figure 1. Typical Application Schematic

www.onsemi.com

XXX

= Specific Device Code

A

= Assembly Location

L

= Wafer Lot

M

= Month Code

Y

= Year

W

= Work Week

  • G = Pb

  • Free Package

(Note: Microdot may be in either location)

Absolute Maximum Ratings

RatingSymbolValueUnit
Input Voltage (Note 1)V IN- 0.3 to 6V
Output VoltageV OUT- 0.3 to V IN +0.3, max. 6V
Chip Enable InputV CE- 0.3 to 6V
Power Good VoltageV PG- 0.3 to 6V
Power Good CurrentI PG30mA
Output Short Circuit Durationt SCunlimiteds
Maximum Junction TemperatureT J150° C
Storage TemperatureT STG- 55 to 150° C
ESD Capability, Human Body Model (Note 2)ESD HBM2000V
ESD Capability, Charged Device Model (Note 2)ESD CDM1000V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.

  2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC -Q100 -002 (EIA/JESD22 -A114) ESD Charged Device Model tested per EIA/JESD22 -C101, Field Induced Charge Model

Thermal Information

RatingSymbolValueUnit
THERMAL CHARACTERISTICS, TSOP - 5 PACKAGE
Thermal Resistance, Junction - to - Ambient (Note 3)R q JA158° C/W
Thermal Resistance, Junction - to - Case (top)R q JC(top)155° C/W
Thermal Resistance, Junction - to - Case (bottom) (Note 4)R q JC(bot)102° C/W
Thermal Resistance, Junction - to - BoardR q JB197° C/W
Characterization Parameter, Junction - to - TopY JT40° C/W
Characterization Parameter, Junction - to - BoardY JB82° C/W
THERMAL CHARACTERISTICS, WDFN6 - 2X2, 0.65 PITCH PACKAGE
Thermal Resistance, Junction - to - Ambient (Note 3)R q JA51° C/W
Thermal Resistance, Junction - to - Case (top)R q JC(top)142° C/W
Thermal Resistance, Junction - to - Case (bottom) (Note 4)R q JC(bot)2° C/W
Thermal Resistance, Junction - to - BoardR q JB117° C/W
Characterization Parameter, Junction - to - TopY JT1.9° C/W
Characterization Parameter, Junction - to - BoardY JB7.7° C/W

Table 4. ELECTRICAL CHARACTERISTICS ( -40 ° C ≤ T J ≤ 150 ° C; V IN = V OUT(NOM) + 0.5 V; I OUT = 1 mA, C IN = C OUT = 1 m F, V EN = V IN , unless otherwise noted. Typical values are at T J = +25 ° C (Note 5))

ParameterTest ConditionsTest ConditionsSymbolMinTypMaxUnit
Operating Input VoltageV IN1.65.5V
Output Voltage AccuracyV IN = V OUT(NOM) + 0.5 V to 5.0 V, 0.1 mA ≤ I OUT ≤ 300 mAV IN = V OUT(NOM) + 0.5 V to 5.0 V, 0.1 mA ≤ I OUT ≤ 300 mAV OUT- 22%
Reference Voltage (Adjustable Ver. ADJ pin connected to OUT)V IN = 1.6 V to 5.0 V, 0.1 mA ≤ I OUT ≤ 300 mAV IN = 1.6 V to 5.0 V, 0.1 mA ≤ I OUT ≤ 300 mAV ADJ1.0781.11.122V
Line RegulationV OUT(NOM) + 0.5 V ≤ V IN ≤ 5.0 VV OUT(NOM) + 0.5 V ≤ V IN ≤ 5.0 VLine Reg0.5mV/V
Load RegulationI OUT = 1 mA to 300 mAI OUT = 1 mA to 300 mALoad Reg2mV
Dropout Voltage (Note 6) TSOP - 5, WDFN6I OUT = 300 mAV OUT(NOM) = 1.5 VV DO170295mV
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 1.8 V155255
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 2.5 V125200
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 2.8 V115185
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 3.0 V113177
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 3.3 V110170
Dropout Voltage (Note 6) TSOP - 5, WDFN6V OUT(NOM) = 4.5 V95135
Output Current LimitV OUT = 90% V OUT(NOM)V OUT = 90% V OUT(NOM)I CL350560mA
Short Circuit CurrentV OUT = 0 VV OUT = 0 VI SC580
Quiescent CurrentI OUT = 0 mAI OUT = 0 mAI Q3040m A
Shutdown CurrentV EN ≤ 0.4 VV EN ≤ 0.4 VI DIS0.011.5m A
EN Pin Threshold VoltageEN Input Voltage 'H'EN Input Voltage 'H'V ENH0.7V
EN Input Voltage 'L'EN Input Voltage 'L'V ENL0.2
EN Pull Down CurrentV EN = 5.0 VV EN = 5.0 VI EN0.20.6m A
Power Good Threshold VoltageOutput Voltage RaisingOutput Voltage RaisingV PGUP95%
Output Voltage FallingOutput Voltage FallingV PGDW90
Power Good Output Voltage LowI PG = 5 mA, Open drainI PG = 5 mA, Open drainV PGLO0.3V
Turn - On Time (Note 7)C OUT = 1 m F , From assertion of V EN to V OUT = 95% V OUT(NOM)C OUT = 1 m F , From assertion of V EN to V OUT = 95% V OUT(NOM)120m s
Power Supply Rejection Ratio (Note 7)V OUT(NOM) = 3.3 V , I = 10 mAf = 100 HzP SRR83dB
Power Supply Rejection Ratio (Note 7)OUTf = 1 kHz85
Power Supply Rejection Ratio (Note 7)f = 10 kHz80
Power Supply Rejection Ratio (Note 7)f = 100 kHz61
Output Voltage Noise (Fixed Ver.)f = 10 Hz to 100 kHzI OUT = 10 mAV N9m V RMS
Thermal Shutdown ThresholdTemperature risingTemperature risingT SDH165° C
(Note 7)Temperature hysteresisTemperature hysteresisT HYST15° C
Active output discharge resistanceV EN < 0.2 V, Version A onlyV EN < 0.2 V, Version A onlyR DIS260W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T J = T A = 25 ° C.

  2. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. Dropout voltage is characterized when V OUT falls 3% below V OUT(NOM) .

  3. Guaranteed by design and characterization.

Typical Application

  • In -Vehicle Networking
  • Communication Systems
  • Telematics, Infotainment and Clusters
  • General Purpose Automotive

Figure 1. Typical Application Schematic

Figure 1. Typical Application Schematic

www.onsemi.com

XXX

= Specific Device Code

A

= Assembly Location

L

= Wafer Lot

M

= Month Code

Y

= Year

W

= Work Week

  • G = Pb

  • Free Package

(Note: Microdot may be in either location)

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
NCP164onsemi—
NCP164AMT120onsemi—
NCP164AMT120TAGonsemiTSOP-5 (3 mm x 1.5 mm
NCP164AMT180onsemi—
NCP164AMT280onsemi—
NCP164AMT330onsemi—
NCP164ASN180onsemi—
NCP164ASN280onsemi—
NCP164ASN330onsemi—
NCP164ASNADJonsemi—
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