MSK22D18G2 125

英飞凌功率MOSFET

Manufacturer

Infineon Technologies

Package

插件

Overview

Part: Infineon BSC020N03MS G

Type: N-Channel Power MOSFET

Key Specs:

  • Drain-Source Voltage (VDS): 30 V
  • On-State Resistance (RDS(on),max) @ VGS=10 V: 2 mΩ
  • On-State Resistance (RDS(on),max) @ VGS=4.5 V: 2.5 mΩ
  • Continuous Drain Current (ID): 176 A

Features:

  • Optimized for 5V driver applications
  • Low FOMSW for high frequency SMPS
  • 100% avalanche tested
  • N-channel
  • Very low on-state resistance RDS(on) @ VGS =4.5 V
  • Excellent gate charge x RDS(on) product (FOM)
  • Qualified according to JEDEC target applications
  • Superior thermal resistance
  • Lead-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications:

  • Notebooks
  • VGA
  • POL (Point-of-Load)

Package:

  • PG-TDSON-8: 0.90 - 1.10 mm (height), 4.95 - 5.35 mm (length), 5.95 - 6.35 mm (width)

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
BSC020N03MS GInfineon Technologies—
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