BSC020N03MS G

Part: Infineon BSC020N03MS G

Type: N-Channel Power MOSFET

Key Specs:

• Drain-Source Voltage (VDS): 30 V
• On-State Resistance (RDS(on),max) @ VGS=10 V: 2 mΩ
• On-State Resistance (RDS(on),max) @ VGS=4.5 V: 2.5 mΩ
• Continuous Drain Current (ID): 176 A

Features:

• Optimized for 5V driver applications
• Low FOMSW for high frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-state resistance RDS(on) @ VGS =4.5 V
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC target applications
• Superior thermal resistance
• Lead-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Applications:

• Notebooks
• VGA
• POL (Point-of-Load)

Package:

• PG-TDSON-8: 0.90 - 1.10 mm (height), 4.95 - 5.35 mm (length), 5.95 - 6.35 mm (width)