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MMBT2222L

NPN Transistor

The MMBT2222L is a npn transistor from onsemi. View the full MMBT2222L datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

MMBT2222L shares its datasheet with MMBT2222ALT1G, whose page lists every part number it covers.

Official MMBT2222L datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Package

SOT-23

MMBT2222L Key Specifications

ParameterValue
Case/PackageSOT-23
China RoHSCompliant
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Contact PlatingTin
Collector Current (Max)600 mA
Current - Collector Cutoff (Max)10nA (ICBO)
Current Rating600 mA
DC Current Gain (hFE)100 @ 150mA, 10V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Transition Frequency300MHz
Gain Bandwidth Product300 MHz
GradeAutomotive
Height1.11 mm
hFE Min75
Introduction Date1999-01-01
Lead FreeLead Free
Length2.9 mm
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements1
Number of Pins3
Number of Terminals3
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingTape and Reel
PackagingMouseReel
PolarityNPN
Power (Max)225 mW
Power Dissipation225 mW
QualificationAEC-Q101
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Standard Pack Qty3000
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Transition Frequency300 MHz
TypeGeneral Purpose
Vce Saturation1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage40 V
Voltage Rating (DC)40 V
Width1.3 mm

MMBT2222L Overview

Part: MMBT2222ALT1G — onsemi

Type: NPN Silicon General Purpose Transistor

Description: NPN silicon general purpose transistor with 40 V Collector-Emitter breakdown voltage, 600 mA continuous collector current, and 300 MHz current-gain bandwidth product, offered in a SOT-23 package.

Operating Conditions:

  • Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

  • Max supply voltage: 40 Vdc (Collector-Emitter Voltage for MMBT2222AL)
  • Max continuous current: 600 mAdc (Collector Current - Continuous)
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc (I C = 10 mAdc, I B = 0)
  • Collector-Base Breakdown Voltage (V(BR)CBO): 75 Vdc (I C = 10 mAdc, I E = 0)
  • Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc (I E = 10 mAdc, I C = 0)
  • Collector Cutoff Current (I CEX): 10 nAdc max (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
  • DC Current Gain (h FE): 100 min (I C = 150 mAdc, V CE = 10 Vdc)
  • Collector-Emitter Saturation Voltage (V CE(sat)): 0.3 Vdc max (I C = 150 mAdc, I B = 15 mAdc)
  • Current-Gain - Bandwidth Product (f T): 300 MHz min (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
  • Delay Time (t d): 10 ns max (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)

Features:

  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Package:

  • SOT-23 (CASE 318)

MMBT2222L Features

  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT2222L Electrical Characteristics

CharacteristicCharacteristicSymbolMinMaxUnit
SMALL-SIGNAL CHARACTERISTICS
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222AOutput Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222Ah oe5.0 2535 200m mhos
Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222ACollector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222Arb, C c-150ps
Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222ANoise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222ANF-4.0dB
SWITCHING CHARACTERISTICS (MMBT2222A only)SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time(V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)t d-10ns
Rise Time(V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)t r-25ns
Storage Time(V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc)t s-225ns
Fall Time(V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc)t f-60ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
  2. f T is defined as the frequency at which |h fe | extrapolates to unity.

MMBT2222L Absolute Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222ALV CEO30 40Vdc
Collector-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222ALV CBO60 75Vdc
Emitter-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222ALV EBO5.0 6.0Vdc
Collector Current - ContinuousI C600mAdc
Collector Current - Peak (Note 3)I CM1100mAdc

MMBT2222L Thermal Information

CharacteristicSymbolMaxUnit
Total Device Dissipation FR-5 Board (Note 1) T A = 25 ° C Derate above 25 ° CP D225 1.8mW mW/ ° C
Thermal Resistance, Junction-to-AmbientR q JA556° C/W
Total Device Dissipation Alumina Substrate (Note 2) T A = 25 ° C Derate above 25 ° CP D300 2.4mW mW/ ° C
Thermal Resistance, Junction-to-AmbientR q JA417° C/W
Junction and Storage Temperature RangeT J , T stg-55 to +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. FR-5 = 1.0 -0.75 -0.062 in.
  2. Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
  3. Reference SOA curve.

SOT-23 CASE 318

SOT-23 CASE 318

STYLE 6

MMBT2222L Package Information

SCALE 4:1

XXX = Specific Device Code

  • M = Date Code
  • G = Pb -Free Package

*This information is generic. Please refer to device data sheet for actual part marking. Pb -Free indicator, 'G' or microdot ' G ', may or may not be present. Some products may not follow the Generic Marking.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
MMBT2222onsemiSOT-23
MMBT2222ALonsemiSOT-23
MMBT2222ALT1GonsemiTO-236-3, SC-59, SOT-23-3
SMMBT2222ALonsemiSOT-23

Other Discrete Semiconductors

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  • 2N3904 – onsemi, NPN General - Purpose Amplifier
  • 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148WS – onsemi, Fast Switching Diode
  • 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ – Diodes Incorporated, Fast Switching Diode

All Discrete Semiconductors datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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