MMBT2222ALT1G
NPN TransistorThe MMBT2222ALT1G is a npn transistor from onsemi. View the full MMBT2222ALT1G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
onsemi
Category
NPN Transistor
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | SOT-23 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 75 V |
| Collector Emitter Breakdown Voltage | 40 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 40 V |
| Contact Plating | Tin |
| Collector Current (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| Current Rating | 600 mA |
| DC Current Gain (hFE) | 100 @ 150mA, 10V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 6 V |
| Frequency | 300 MHz |
| Transition Frequency | 300MHz |
| Gain Bandwidth Product | 300 MHz |
| Grade | Automotive |
| Height | 1.11 mm |
| hFE Min | 75 |
| Introduction Date | 1999-01-01 |
| Lead Free | Lead Free |
| Length | 2.9 mm |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Breakdown Voltage | 40 V |
| Max Collector Current | 600 mA |
| Max Frequency | 300 MHz |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power (Max) | 225 mW |
| Power Dissipation | 225 mW |
| Qualification | AEC-Q101 |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | NPN |
| Transition Frequency | 300 MHz |
| Type | General Purpose |
| Vce Saturation | 1V @ 50mA, 500mA |
| Collector-Emitter Breakdown Voltage | 40 V |
| Voltage Rating (DC) | 40 V |
| Width | 1.3 mm |
Overview
Part: MMBT2222ALT1G — onsemi
Type: NPN Silicon General Purpose Transistor
Description: NPN silicon general purpose transistor with 40 V Collector-Emitter breakdown voltage, 600 mA continuous collector current, and 300 MHz current-gain bandwidth product, offered in a SOT-23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: 40 Vdc (Collector-Emitter Voltage for MMBT2222AL)
- Max continuous current: 600 mAdc (Collector Current - Continuous)
- Max junction/storage temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc (I C = 10 mAdc, I B = 0)
- Collector-Base Breakdown Voltage (V(BR)CBO): 75 Vdc (I C = 10 mAdc, I E = 0)
- Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc (I E = 10 mAdc, I C = 0)
- Collector Cutoff Current (I CEX): 10 nAdc max (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
- DC Current Gain (h FE): 100 min (I C = 150 mAdc, V CE = 10 Vdc)
- Collector-Emitter Saturation Voltage (V CE(sat)): 0.3 Vdc max (I C = 150 mAdc, I B = 15 mAdc)
- Current-Gain - Bandwidth Product (f T): 300 MHz min (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
- Delay Time (t d): 10 ns max (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)
Features:
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Package:
- SOT-23 (CASE 318)
Features
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|---|
| SMALL-SIGNAL CHARACTERISTICS | |||||
| Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A | Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A | h oe | 5.0 25 | 35 200 | m mhos |
| Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A | Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A | rb, C c | - | 150 | ps |
| Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A | Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A | NF | - | 4.0 | dB |
| SWITCHING CHARACTERISTICS (MMBT2222A only) | SWITCHING CHARACTERISTICS (MMBT2222A only) | ||||
| Delay Time | (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc) | t d | - | 10 | ns |
| Rise Time | (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc) | t r | - | 25 | ns |
| Storage Time | (V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc) | t s | - | 225 | ns |
| Fall Time | (V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc) | t f | - | 60 | ns |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
- f T is defined as the frequency at which |h fe | extrapolates to unity.
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V CEO | 30 40 | Vdc |
| Collector-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V CBO | 60 75 | Vdc |
| Emitter-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V EBO | 5.0 6.0 | Vdc |
| Collector Current - Continuous | I C | 600 | mAdc |
| Collector Current - Peak (Note 3) | I CM | 1100 | mAdc |
Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Total Device Dissipation FR-5 Board (Note 1) T A = 25 ° C Derate above 25 ° C | P D | 225 1.8 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 556 | ° C/W |
| Total Device Dissipation Alumina Substrate (Note 2) T A = 25 ° C Derate above 25 ° C | P D | 300 2.4 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 417 | ° C/W |
| Junction and Storage Temperature Range | T J , T stg | -55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- FR-5 = 1.0 -0.75 -0.062 in.
- Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
- Reference SOA curve.
SOT-23 CASE 318
SOT-23 CASE 318
STYLE 6
Package Information
SCALE 4:1
XXX = Specific Device Code
- M = Date Code
- G = Pb -Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb -Free indicator, 'G' or microdot ' G ', may or may not be present. Some products may not follow the Generic Marking.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| MMBT2222 | ON Semiconductor | — |
| MMBT2222AL | ON Semiconductor | — |
| MMBT2222L | ON Semiconductor | — |
| SMMBT2222AL | ON Semiconductor | — |
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