MMBT2222A

NPN General Purpose Transistor

The MMBT2222A is a npn general purpose transistor from onsemi. View the full MMBT2222A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official MMBT2222A datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

MMBT2222A Key Specifications

Parameter	Value
Noise Figure	4.0 dB max
Storage Time	225 ns max
Turn-On Delay Time	10 ns max
Input Capacitance (Cibo)	25 pF max
Output Capacitance (Cobo)	8.0 pF max
Emitter-Base Voltage (VEBO)	6.0 Vdc
Collector-Base Voltage (VCBO)	75 Vdc
Collector Current - Peak (ICM)	1100 mAdc
Collector-Emitter Voltage (VCEO)	40 Vdc
Power Dissipation (FR-5, TA=25C)	225 mW
Collector Current - Continuous (IC)	600 mAdc
Current-Gain Bandwidth Product (FT)	300 MHz min
Operating/Storage Temperature Range	-55 to +150 C
Power Dissipation (Alumina, TA=25C)	300 mW
DC Current Gain (HFE) At IC=150mA, VCE=10V	100 to 300
Thermal Resistance Junction-To-Ambient (FR-5)	556 C/W
Collector-Emitter Saturation Voltage (IC=150mA)	0.3 V max
Thermal Resistance Junction-To-Ambient (Alumina)	417 C/W

MMBT2222A Overview

Part: MMBT2222L, MMBT2222AL, SMMBT2222AL — ON Semiconductor

Type: NPN Silicon General Purpose Transistor

Description: NPN silicon general purpose transistor with a continuous collector current of 600 mAdc, collector-emitter voltage up to 40 Vdc, and a current-gain bandwidth product up to 300 MHz.

Operating Conditions:

Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

Max supply voltage: 40 Vdc (Collector-Emitter Voltage for MMBT2222AL, SMMBT2222AL)
Max continuous current: 600 mAdc
Max junction/storage temperature: +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc min (I_C = 10 mAdc, I_B = 0, for MMBT2222A)
Collector-Base Breakdown Voltage (V(BR)CBO): 75 Vdc min (I_C = 10 mAdc, I_E = 0, for MMBT2222A)
Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc min (I_E = 10 mAdc, I_C = 0, for MMBT2222A)
DC Current Gain (h_FE): 100 min (I_C = 150 mAdc, V_CE = 10 Vdc, for MMBT2222A)
Collector-Emitter Saturation Voltage (V_CE(sat)): 0.3 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc, for MMBT2222A)
Current-Gain - Bandwidth Product (f_T): 300 MHz min (I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz, for MMBT2222A)
Output Capacitance (C_obo): 8.0 pF max (V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Delay Time (t_d): 10 ns max (V_CC = 30 Vdc, V_BE(off) = -0.5 Vdc, I_C = 150 mAdc, I_B1 = 15 mAdc, for MMBT2222A)

Features:

Pb-Free, Halogen Free/BFR Free and RoHS Compliant
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Package:

SOT-23 (TO-236)

MMBT2222A Features

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT2222A Electrical Characteristics

Characteristic	Characteristic	Symbol	Min	Max	Unit
SMALL-SIGNAL CHARACTERISTICS
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A	Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A	h oe	5.0 25	35 200	m mhos
Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A	Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A	rb, C c	-	150	ps
Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A	Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A	NF	-	4.0	dB
SWITCHING CHARACTERISTICS (MMBT2222A only)	SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time	(V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)	t d	-	10	ns
Rise Time	(V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)	t r	-	25	ns
Storage Time	(V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc)	t s	-	225	ns
Fall Time	(V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc)	t f	-	60	ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
f T is defined as the frequency at which |h fe | extrapolates to unity.

MMBT2222A Absolute Maximum Ratings

Rating	Symbol	Value	Unit
Collector-Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222AL	V CEO	30 40	Vdc
Collector-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL	V CBO	60 75	Vdc
Emitter-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL	V EBO	5.0 6.0	Vdc
Collector Current - Continuous	I C	600	mAdc
Collector Current - Peak (Note 3)	I CM	1100	mAdc

MMBT2222A Thermal Information

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR-5 Board (Note 1) T A = 25 ° C Derate above 25 ° C	P D	225 1.8	mW mW/ ° C
Thermal Resistance, Junction-to-Ambient	R q JA	556	° C/W
Total Device Dissipation Alumina Substrate (Note 2) T A = 25 ° C Derate above 25 ° C	P D	300 2.4	mW mW/ ° C
Thermal Resistance, Junction-to-Ambient	R q JA	417	° C/W
Junction and Storage Temperature Range	T J , T stg	-55 to +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

FR-5 = 1.0 -0.75 -0.062 in.
Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
Reference SOA curve.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
MMBT2222	onsemi	SOT-23
MMBT2222AL	onsemi	SOT-23
MMBT2222L	onsemi	SOT-23
SMMBT2222AL	onsemi	SOT-23

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