MMBT2222A
The MMBT2222A is an electronic component from ON Semiconductor. View the full MMBT2222A datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
ON Semiconductor
Overview
Part: MMBT2222L, MMBT2222AL, SMMBT2222AL — ON Semiconductor
Type: NPN Silicon General Purpose Transistor
Description: NPN silicon general purpose transistor with a continuous collector current of 600 mAdc, collector-emitter voltage up to 40 Vdc, and a current-gain bandwidth product up to 300 MHz.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: 40 Vdc (Collector-Emitter Voltage for MMBT2222AL, SMMBT2222AL)
- Max continuous current: 600 mAdc
- Max junction/storage temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc min (I_C = 10 mAdc, I_B = 0, for MMBT2222A)
- Collector-Base Breakdown Voltage (V(BR)CBO): 75 Vdc min (I_C = 10 mAdc, I_E = 0, for MMBT2222A)
- Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc min (I_E = 10 mAdc, I_C = 0, for MMBT2222A)
- DC Current Gain (h_FE): 100 min (I_C = 150 mAdc, V_CE = 10 Vdc, for MMBT2222A)
- Collector-Emitter Saturation Voltage (V_CE(sat)): 0.3 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc, for MMBT2222A)
- Current-Gain - Bandwidth Product (f_T): 300 MHz min (I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz, for MMBT2222A)
- Output Capacitance (C_obo): 8.0 pF max (V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
- Delay Time (t_d): 10 ns max (V_CC = 30 Vdc, V_BE(off) = -0.5 Vdc, I_C = 150 mAdc, I_B1 = 15 mAdc, for MMBT2222A)
Features:
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Package:
- SOT-23 (TO-236)
Features
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|---|
| SMALL-SIGNAL CHARACTERISTICS | |||||
| Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A | Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A | h oe | 5.0 25 | 35 200 | m mhos |
| Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A | Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A | rb, C c | - | 150 | ps |
| Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A | Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) MMBT2222A, SMMBT2222A | NF | - | 4.0 | dB |
| SWITCHING CHARACTERISTICS (MMBT2222A only) | SWITCHING CHARACTERISTICS (MMBT2222A only) | ||||
| Delay Time | (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc) | t d | - | 10 | ns |
| Rise Time | (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, I C = 150 mAdc, I B1 = 15 mAdc) | t r | - | 25 | ns |
| Storage Time | (V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc) | t s | - | 225 | ns |
| Fall Time | (V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc) | t f | - | 60 | ns |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
- f T is defined as the frequency at which |h fe | extrapolates to unity.
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V CEO | 30 40 | Vdc |
| Collector-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V CBO | 60 75 | Vdc |
| Emitter-Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL | V EBO | 5.0 6.0 | Vdc |
| Collector Current - Continuous | I C | 600 | mAdc |
| Collector Current - Peak (Note 3) | I CM | 1100 | mAdc |
Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Total Device Dissipation FR-5 Board (Note 1) T A = 25 ° C Derate above 25 ° C | P D | 225 1.8 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 556 | ° C/W |
| Total Device Dissipation Alumina Substrate (Note 2) T A = 25 ° C Derate above 25 ° C | P D | 300 2.4 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 417 | ° C/W |
| Junction and Storage Temperature Range | T J , T stg | -55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- FR-5 = 1.0 -0.75 -0.062 in.
- Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
- Reference SOA curve.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| C82460 | — | — |
| MMBT2222 | ON Semiconductor | — |
| MMBT2222AL | ON Semiconductor | — |
| MMBT2222L | ON Semiconductor | — |
| SMMBT2222AL | ON Semiconductor | — |
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