MJE13005

Part: MJE13005G — onsemi

Type: NPN Silicon High-Voltage Power Transistor (SWITCHMODE series)

Description: 4 A, 400 V (VCEO(sus)), 75 W NPN silicon power transistor in a TO-220 package, designed for high-voltage, high-speed inductive switching, with 700 V blocking capability.

Operating Conditions:

• Supply voltage: not applicable
• Operating temperature: -65 to +150 °C (operating and storage junction temperature range)
• Collector current: 4 A continuous, 8 A peak

Absolute Maximum Ratings:

• Collector-emitter voltage VCEO(sus): 400 Vdc
• Collector-emitter voltage VCEV: 700 Vdc
• Emitter-base voltage VEBO: 9 Vdc
• Max continuous collector current IC: 4 Adc (8 Adc peak)
• Max junction/storage temperature: -65 to +150 °C
• Power dissipation: 75 W at TC = 25 °C; 2 W at TA = 25 °C

Key Specs:

• DC current gain hFE: min 60 at IC = 1 A, VCE = 5 V; min 40 at IC = 2 A, VCE = 5 V
• VCE(sat): max 0.5 V at IC = 1 A, IB = 0.2 A; 0.6 V at IC = 2 A, IB = 0.5 A; 1 V at IC = 4 A, IB = 1 A
• VBE(sat): max 1.2 V at IC = 1 A, IB = 0.2 A; 1.6 V at IC = 2 A, IB = 0.5 A
• ICEV: max 1 mA (5 mA at TC = 100 °C) at rated VCEV, VBE(off) = 1.5 V
• IEBO: max 1 mA at VEB = 9 V
• Output capacitance Cob: 65 pF typ at VCB = 10 V, f = 0.1 MHz
• Inductive switching (IC = 2 A, Vclamp = 300 V, TC = 100 °C): tc 0.32 μs typ, 0.9 μs max; tsv 0.9 μs typ, 4 μs max; tfi 0.16 μs typ
• Thermal resistance: RθJC 1.67 °C/W, RθJA 62.5 °C/W

Features:

• Reverse bias SOA with inductive loads at TC = 100 °C
• VCEO(sus) of 400 V
• Inductive switching matrix at 2 to 4 A, 25 and 100 °C; tc at 3 A, 100 °C is 180 ns typ
• SOA and switching applications information
• 700 V blocking capability
• Pb-free and RoHS compliant

Applications:

• Switching regulators
• Inverters
• Motor controls
• Solenoid/relay drivers
• Deflection circuits
• 115 V and 220 V SWITCHMODE applications

Package:

• TO-220AB (Case 221A-09, Style 1), Pb-free, 50 units per rail

• Reverse Bias SOA with Inductive Loads @ TC = 100 _ C
• VCEO(sus) 400 V
• Inductive Switching Matrix 2 to 4 A, 25 and 100 _ C t c @ 3A, 100 _ C is 180 ns (Typ)
• SOA and Switching Applications Information
• 700 V Blocking Capability
• These Devices are Pb -Free and are RoHS Compliant*

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com