MJE13005
The MJE13005 is an electronic component from onsemi. View the full MJE13005 datasheet below including absolute maximum ratings.
Manufacturer
onsemi
Overview
Part: MJE13005G — onsemi
Type: NPN Silicon Power Transistor
Description: High-voltage, high-speed NPN silicon power transistor designed for power switching inductive circuits, featuring 400 V VCEO(sus) and 4 A continuous collector current.
Operating Conditions:
- Operating temperature: -65 to +150 °C
- VCEO(sus): 400 V
- Continuous Collector Current: 4 A
Absolute Maximum Ratings:
- Max supply voltage: 700 V (Collector-Emitter Voltage, VCEV)
- Max continuous current: 4 A (Collector Current)
- Max junction/storage temperature: +150 °C
- Total Device Dissipation (TC = 25 °C): 75 W
Key Specs:
- Collector-Emitter Sustaining Voltage (VCEO(sus)): 400 Vdc (IC = 10 mA, IB = 0)
- Collector Cutoff Current (ICEV): 1 mAdc (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
- Collector Cutoff Current (ICEV): 5 mAdc (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100 °C)
- DC Current Gain (hFE): 40 (IC = 2 Adc, VCE = 5 Vdc)
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.6 Vdc (IC = 2 Adc, IB = 0.5 Adc)
- Output Capacitance (Cob): 65 pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
- Crossover Time (tc): 0.9 µs (IC = 2 A, Vclamp = 300 Vdc, IB = 0.4 A, VB = 5 Vdc, TC = 100 °C)
- Fall Time (tf): 0.4 µs (Resistive Load)
Features:
- Reverse Bias SOA with Inductive Loads @ TC = 100 °C
- VCEO(sus) 400 V
- Inductive Switching Matrix 2 to 4 A, 25 and 100 °C
- tc @ 3A, 100 °C is 180 ns (Typ)
- 700 V Blocking Capability
- Pb-Free and RoHS Compliant
Applications:
- Switching Regulator's
- Inverters
- Motor Controls
- Solenoid/Relay drivers
- Deflection circuits
Package:
- TO-220AB (CASE 221A-09 STYLE 1)
Features
- Reverse Bias SOA with Inductive Loads @ TC = 100 _ C
- VCEO(sus) 400 V
- Inductive Switching Matrix 2 to 4 A, 25 and 100 _ C t c @ 3A, 100 _ C is 180 ns (Typ)
- SOA and Switching Applications Information
- 700 V Blocking Capability
- These Devices are Pb -Free and are RoHS Compliant*
Absolute Maximum Ratings
| Rating | Rating | Symbol | Value | Unit |
|---|---|---|---|---|
| Collector - Emitter Voltage | Collector - Emitter Voltage | V CEO(sus) | 400 | Vdc |
| Collector - Emitter Voltage | Collector - Emitter Voltage | V CEV | 700 | Vdc |
| Emitter - Base Voltage | Emitter - Base Voltage | V EBO | 9 | Vdc |
| Collector Current | - Continuous - Peak (Note 1) | I C I CM | 4 8 | Adc |
| Base Current | - Continuous - Peak (Note 1) | I B I BM | 2 4 | Adc |
| Emitter Current | - Continuous - Peak (Note 1) | I E I EM | 6 12 | Adc |
| Total Device Dissipation@T A = 25 _ C Derate above 25 ° C | Total Device Dissipation@T A = 25 _ C Derate above 25 ° C | P D | 2 0.016 | W W/ _ C |
| Total Device Dissipation@T C = 25 _ C Derate above 25 ° C | Total Device Dissipation@T C = 25 _ C Derate above 25 ° C | P D | 75 0.6 | W W/ _ C |
| Operating and Storage Junction Temperature Range | Operating and Storage Junction Temperature Range | T J , T stg | - 65 to +150 | _ C |
Thermal Information
| Characteristics | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction - to - Ambient | R q JA | 62.5 | _ C/W |
| Thermal Resistance, Junction - to - Case | R q JC | 1.67 | _ C/W |
| Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 5 Seconds | T L | 275 | _ C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
- Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| C130005 | Texas Instruments | — |
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