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C130005

The C130005 is an electronic component from Texas Instruments. View the full C130005 datasheet below including absolute maximum ratings.

Manufacturer

Texas Instruments

Overview

Part: MJE13005G — onsemi

Type: NPN Silicon Power Transistor

Description: High-voltage, high-speed NPN silicon power transistor designed for power switching inductive circuits, featuring 400 V VCEO(sus) and 4 A continuous collector current.

Operating Conditions:

  • Operating temperature: -65 to +150 °C
  • VCEO(sus): 400 V
  • Continuous Collector Current: 4 A

Absolute Maximum Ratings:

  • Max supply voltage: 700 V (Collector-Emitter Voltage, VCEV)
  • Max continuous current: 4 A (Collector Current)
  • Max junction/storage temperature: +150 °C
  • Total Device Dissipation (TC = 25 °C): 75 W

Key Specs:

  • Collector-Emitter Sustaining Voltage (VCEO(sus)): 400 Vdc (IC = 10 mA, IB = 0)
  • Collector Cutoff Current (ICEV): 1 mAdc (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
  • Collector Cutoff Current (ICEV): 5 mAdc (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100 °C)
  • DC Current Gain (hFE): 40 (IC = 2 Adc, VCE = 5 Vdc)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.6 Vdc (IC = 2 Adc, IB = 0.5 Adc)
  • Output Capacitance (Cob): 65 pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
  • Crossover Time (tc): 0.9 µs (IC = 2 A, Vclamp = 300 Vdc, IB = 0.4 A, VB = 5 Vdc, TC = 100 °C)
  • Fall Time (tf): 0.4 µs (Resistive Load)

Features:

  • Reverse Bias SOA with Inductive Loads @ TC = 100 °C
  • VCEO(sus) 400 V
  • Inductive Switching Matrix 2 to 4 A, 25 and 100 °C
  • tc @ 3A, 100 °C is 180 ns (Typ)
  • 700 V Blocking Capability
  • Pb-Free and RoHS Compliant

Applications:

  • Switching Regulator's
  • Inverters
  • Motor Controls
  • Solenoid/Relay drivers
  • Deflection circuits

Package:

  • TO-220AB (CASE 221A-09 STYLE 1)

Features

  • Reverse Bias SOA with Inductive Loads @ TC = 100 _ C
  • VCEO(sus) 400 V
  • Inductive Switching Matrix 2 to 4 A, 25 and 100 _ C t c @ 3A, 100 _ C is 180 ns (Typ)
  • SOA and Switching Applications Information
  • 700 V Blocking Capability
  • These Devices are Pb -Free and are RoHS Compliant*

Absolute Maximum Ratings

RatingRatingSymbolValueUnit
Collector - Emitter VoltageCollector - Emitter VoltageV CEO(sus)400Vdc
Collector - Emitter VoltageCollector - Emitter VoltageV CEV700Vdc
Emitter - Base VoltageEmitter - Base VoltageV EBO9Vdc
Collector Current- Continuous - Peak (Note 1)I C I CM4 8Adc
Base Current- Continuous - Peak (Note 1)I B I BM2 4Adc
Emitter Current- Continuous - Peak (Note 1)I E I EM6 12Adc
Total Device Dissipation@T A = 25 _ C Derate above 25 ° CTotal Device Dissipation@T A = 25 _ C Derate above 25 ° CP D2 0.016W W/ _ C
Total Device Dissipation@T C = 25 _ C Derate above 25 ° CTotal Device Dissipation@T C = 25 _ C Derate above 25 ° CP D75 0.6W W/ _ C
Operating and Storage Junction Temperature RangeOperating and Storage Junction Temperature RangeT J , T stg- 65 to +150_ C

Thermal Information

CharacteristicsSymbolMaxUnit
Thermal Resistance, Junction - to - AmbientR q JA62.5_ C/W
Thermal Resistance, Junction - to - CaseR q JC1.67_ C/W
Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 5 SecondsT L275_ C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

  1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
MJE13005onsemi
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