MC74HC00A

The MC74HC00A is an electronic component from onsemi. View the full MC74HC00A datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

onsemi

Overview

Part: MC74HC00A — onsemi Type: Quad 2-Input NAND Gate Description: High-performance silicon-gate CMOS quad 2-input NAND gate with 2 to 6 V operating voltage range and 10 LSTTL loads output drive capability.

Operating Conditions:

Supply voltage: 2.0–6.0 V
Operating temperature: -55 to +125 °C
Input/Output voltage: 0 to V CC V

Absolute Maximum Ratings:

Max supply voltage: +6.5 V
Max continuous current: ±50 mA (DC Supply Current, V CC and GND Pins)
Max junction/storage temperature: +150 °C

Key Specs:

Minimum High-Level Input Voltage (V IH ): 1.50 V (V CC = 2.0 V, -55 to 25 °C)
Maximum Low-Level Input Voltage (V IL ): 0.50 V (V CC = 2.0 V, -55 to 25 °C)
Minimum High-Level Output Voltage (V OH ): 1.9 V (V CC = 2.0 V, -55 to 25 °C)
Maximum Low-Level Output Voltage (V OL ): 0.1 V (V CC = 2.0 V, -55 to 25 °C)
Maximum Input Leakage Current (I in ): ±0.1 μA (V CC = 6.0 V, -55 to 25 °C)
Maximum Quiescent Supply Current (I CC ): 1.0 μA (V CC = 6.0 V, -55 to 25 °C)
Maximum Propagation Delay (t PLH, t PHL ): 15 ns (V CC = 4.5 V, -55 to 25 °C)
Maximum Input Capacitance (C in ): 10 pF

Features:

Outputs Directly Interface to CMOS, NMOS and TTL
Output Drive Capability: 10 LSTTL Loads
High Noise Immunity Characteristic of CMOS Devices
Low Input Current: 1 μA
In Compliance With the JEDEC Standard No. 7 A Requirements
-Q Suffix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q100 Qualified and PPAP Capable
Chip Complexity: 32 FETs or 8 Equivalent Gates
Pb-Free, Halogen Free and RoHS Compliant

Applications:

Package:

SOIC-14
TSSOP-14

Features

Outputs Directly Interface to CMOS, NMOS and TTL
Output Drive Capability: 10 LSTTL Loads
Operating Voltage Range: 2 to 6 V
High Noise Immunity Characteristic of CMOS Devices
Low Input Current: 1 m A
In Compliance With the JEDEC Standard No. 7 A Requirements
-Q Suffix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable
Chip Complexity: 32 FETs or 8 Equivalent Gates
These Devices are Pb -Free, Halogen Free and are RoHS Compliant

Figure 1. Logic Diagram

Figure 1. Logic Diagram

Electrical Characteristics

			V CC	Guaranteed Limit	Guaranteed Limit	Guaranteed Limit
Symbol	Parameter	Condition	V	- 55 to 25 ° C	≤ 85 ° C	≤ 125 ° C
V IH	Minimum High - Level Input Volt- age	V out = 0.1V or V CC - 0.1V \	I out \	≤ 20 m A	2.0 3.0 4.5 6.0	1.50 2.10 3.15 4.20
V IL	Maximum Low - Level Input Volt- age	V out = 0.1V or V CC - 0.1V \	I out \	≤ 20 m A	2.0 3.0 4.5 6.0	0.50 0.90 1.35 1.80
V OH	Minimum High - Level Output Voltage	V in = V IH or V IL \	I out \	≤ 20 m A	2.0 4.5 6.0	1.9 4.4 5.9
V OH		V in =V IH or V IL \	I out \	≤ \	I out \	≤ \
V OL	Maximum Low - Level Output Voltage	V in = V IH or V IL \	I out \	≤ 20 m A	2.0 4.5 6.0	0.1 0.1 0.1
V OL		V in = V IH or V IL \	I out \	≤ \	I out \	≤ \
I in	Maximum Input Leakage Current	V in = V CC or GND	6.0	± 0.1	± 1.0	± 1.0
I CC	Maximum Quiescent Supply Current (per Package)	V in = V CC or GND I out = 0 m A	6.0	1.0	10	40

Absolute Maximum Ratings

Symbol	Parameter	Parameter	Value	Unit
V CC	DC Supply Voltage	DC Supply Voltage	- 0.5 to +6.5	V
V I	DC Input Voltage	DC Input Voltage	- 0.5 to V CC + 0.5	V
V O	DC Output Voltage	DC Output Voltage	- 0.5 to V CC + 0.5	V
I IN	DC Input Current, per Pin	DC Input Current, per Pin	± 20	mA
I OUT	DC Output Current, Per Pin	DC Output Current, Per Pin	± 25	mA
I CC	DC Supply Current, V CC and GND Pins	DC Supply Current, V CC and GND Pins	± 50	mA
I IK	Input Clamp Current (V IN < 0 or V IN > V CC )	Input Clamp Current (V IN < 0 or V IN > V CC )	± 20	mA
I OK	Output Clamp Current (V OUT < 0 or V OUT > V CC )	Output Clamp Current (V OUT < 0 or V OUT > V CC )	± 20	mA
T STG	Storage Temperature Range	Storage Temperature Range	- 65 to +150	° C
T L	Lead Temperature, 1 mmfrom Case for 10 secs	Lead Temperature, 1 mmfrom Case for 10 secs	260	° C
T J	Junction Temperature Under Bias	Junction Temperature Under Bias	+150	° C
q JA	Thermal Resistance (Note 1)	SOIC - 14 QFN14 TSSOP - 14	116 130 150	° C/W
P D	Power Dissipation in Still Air at 25 ° C	SOIC - 14 QFN14 TSSOP - 20	1077 962 833	mW
MSL	Moisture Sensitivity	Moisture Sensitivity	Level 1	-
F R	Flammability Rating	Oxygen Index: 28 to 34	UL 94 V - 0 @0.125 in	-
V ESD	ESD Withstand Voltage (Note 2)	Human Body Model Charged Device Model	> 2000 > 1000	V

Recommended Operating Conditions

Symbol	Parameter	Min	Max	Unit
V CC	DC Supply Voltage (Referenced to GND)	2.0	6.0	V
V IN , V OUT	DC Input, Output Voltage (Referenced to GND) (Note 3)	0	V CC	V
T A	Operating Free - Air Temperature	- 55	+125	° C
t r , t f	Input Rise or Fall Rate	- 0 0 0	1000 500 400	ns

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
HGC0402R5105K500NTEJ	—	—

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