HGC0402R5105K500NTEJ

SPC584Bx

Overview

Part: SPC584Bx Type: 32-bit Power Architecture Microcontroller

Key Specs:

  • CPU: e200z420, 32-bit Power Architecture
  • Core Frequency: 120 MHz
  • On-chip Flash Memory: 2112 KB (2048 KB code + 64 KB data)
  • HSM Dedicated Flash Memory: 176 KB (1

Features

  • AEC-Q100 qualified
  • High performance e200z420
    • 32-bit Power Architecture technology CPU
    • Core frequency as high as 120 MHz
    • Variable Length Encoding (VLE)
  • 2112 KB (2048 KB code flash + 64 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation
  • 176 KB HSM dedicated flash memory (144 KB code + 32 KB data)
  • 128 KB on-chip general-purpose SRAM (in addition to 64 KB core local data RAM
  • Crossbar switch architecture for concurrent access to peripherals, Flash, or RAM from multiple bus masters with end-to-end ECC
  • Multi-channel direct memory access controller (eDMA) with 64 channels
  • 1 interrupt controller (INTC)
  • Comprehensive new generation ASIL-B safety concept
    • ASIL-B of ISO 26262
    • FCCU for collection and reaction to failure notifications
  • Memory Error Management Unit (MEMU) for collection and reporting of error events in memories
  • Cyclic redundancy check (CRC) unit
  • Enhanced low power support
    • Ultra low power STANDBY
    • Smart Wake-up Unit
    • Fast wake-up and execute from RAM
  • Enhanced modular IO subsystem (eMIOS): up to 64 timed I/O channels with 16-bit counter resolution
  • Body cross triggering unit (BCTU)
    • Triggers ADC conversions from any eMIOS channel
    • Triggers ADC conversions from up to 2 dedicated PIT_RTIs
  • Enhanced analog-to-digital converter system with:
    • 2 independent fast 12-bit SAR analog converters
    • 1 supervisor 12-bit SAR analog converter
    • 1 10-bit SAR analog converter with STDBY mode support
  • Communication interfaces
    • 1 Ethernet controller 10/100 Mbps, compliant IEEE 802.3-2008
    • 8 MCAN interfaces with advanced shared memory scheme and ISO CAN-FD support
    • 14 LINFlexD modules
    • 7 Deserial Serial Peripheral Interface (DSPI) modules
  • Dual phase-locked loops with stable clock domain for peripherals and FM modulation domain for computational shell
  • Nexus Development Interface (NDI) per IEEE-ISTO 5001-2003 standard, with some support for 2010 standard

This is information on a product in full production.

  • Boot Assist Flash (BAF) supports factory programming using a serial bootload through the asynchronous CAN or LIN/UART

  • Junction temperature range -40 °C to 150 °C

  • eTQFP64

  • eTQFP100

  • eTQFP144

  • eTQFP176

Table 1. Device summary

Applications

Features

  • AEC-Q100 qualified
  • High performance e200z420
    • 32-bit Power Architecture technology CPU
    • Core frequency as high as 120 MHz
    • Variable Length Encoding (VLE)
  • 2112 KB (2048 KB code flash + 64 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation
  • 176 KB HSM dedicated flash memory (144 KB code + 32 KB data)
  • 128 KB on-chip general-purpose SRAM (in addition to 64 KB core local data RAM
  • Crossbar switch architecture for concurrent access to peripherals, Flash, or RAM from multiple bus masters with end-to-end ECC
  • Multi-channel direct memory access controller (eDMA) with 64 channels
  • 1 interrupt controller (INTC)
  • Comprehensive new generation ASIL-B safety concept
    • ASIL-B of ISO 26262
    • FCCU for collection and reaction to failure notifications
  • Memory Error Management Unit (MEMU) for collection and reporting of error events in memories
  • Cyclic redundancy check (CRC) unit
  • Enhanced low power support
    • Ultra low power STANDBY
    • Smart Wake-up Unit
    • Fast wake-up and execute from RAM
  • Enhanced modular IO subsystem (eMIOS): up to 64 timed I/O channels with 16-bit counter resolution
  • Body cross triggering unit (BCTU)
    • Triggers ADC conversions from any eMIOS channel
    • Triggers ADC conversions from up to 2 dedicated PIT_RTIs
  • Enhanced analog-to-digital converter system with:
    • 2 independent fast 12-bit SAR analog converters
    • 1 supervisor 12-bit SAR analog converter
    • 1 10-bit SAR analog converter with STDBY mode support
  • Communication interfaces
    • 1 Ethernet controller 10/100 Mbps, compliant IEEE 802.3-2008
    • 8 MCAN interfaces with advanced shared memory scheme and ISO CAN-FD support
    • 14 LINFlexD modules
    • 7 Deserial Serial Peripheral Interface (DSPI) modules
  • Dual phase-locked loops with stable clock domain for peripherals and FM modulation domain for computational shell
  • Nexus Development Interface (NDI) per IEEE-ISTO 5001-2003 standard, with some support for 2010 standard

This is information on a product in full production.

  • Boot Assist Flash (BAF) supports factory programming using a serial bootload through the asynchronous CAN or LIN/UART

  • Junction temperature range -40 °C to 150 °C

  • eTQFP64

  • eTQFP100

  • eTQFP144

  • eTQFP176

Table 1. Device summary

Electrical Characteristics

4.1 Introduction

The present document contains the target Electrical Specification for the 40 nm family 32-bit MCU SPC584Bx products.

In the tables where the device logic provides signals with their respective timing characteristics, the symbol "CC" (Controller Characteristics) is included in the "Symbol" column.

In the tables where the external system must provide signals with their respective timing characteristics to the device, the symbol "SR" (System Requirement) is included in the "Symbol" column.

The electrical parameters shown in this document are guaranteed by various methods. To give the customer a better understanding, the classifications listed in Table 3 are used and the parameters are tagged accordingly in the tables where appropriate.

Classification tagTag description
PThose parameters are guaranteed during production testing on each individual device.
CThose parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations.
TThose parameters are achieved by design validation on a small sample size from typical devices.
DThose parameters are derived mainly from simulations.

Classification tagTag description

4.2 Absolute maximum ratings

Table 4 describes the maximum ratings for the device. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Stress beyond the listed maxima, even momentarily, may affect device reliability or cause permanent damage to the device.

SymbolCParameterConditionsMinTypMaxUnit
VDD_LVSRDCore voltage
operating life
range(1)
–0.31.4
VDD_HV_IO_MAIN
VDD_HV_IO_ETH
VDD_HV_OSC
VDD_HV_FLA
SRDI/O supply
voltage(2)
–0.36.0
VSS_HV_ADVSRDADC ground<br

Table 4. Absolute maximum ratings
-----------------------------------

SymbolParameterValue
CConditionsMin
TSTGSRTMaximum non
operating
Storage
temperature
range
–55
TPASSRCMaximum
nonoperating
temperature
during passive
lifetime
–55
TSTORAGESRMaximum
storage time,
assembled part
programmed in
ECU
No supply; storage
temperature in
range –40 °C to
60 °C
TSDRSRTMaximum solder
temperature Pb
free packaged(8)
MSLSRTMoisture
sensitivity
level(9)
TXRAY doseSRTMaximum
cumulated
XRAY dose
Typical range for
X-rays source
during
inspection:80 ÷
130 KV; 20 ÷
50 A
Table 4. Absolute maximum ratings

2. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions.

    1. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal calculations.
    1. Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
    1. This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum limits to the transition time.
    1. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
    1. 175 °C are allowed for limited time. Mission profile with passive lifetime temperature >150 °C have to be evaluated by ST to confirm that are granted by product qualification.
    1. Solder profile per IPC/JEDEC J-STD-020D.
  1. Moisture sensitivity per JDEC test method A112.

4.3 Operating conditions

Table 5 describes the operating conditions for the device, and for which all the specifications in the data sheet are valid, except where explicitly noted. The device operating conditions must not be exceeded or the functionality of the device is not guaranteed.

SymbolCPParameterConditionsMinTypMaxUnit
FSYSSRPOperating
system clock
frequency(2)
120MHz
TA_125 Grade(3)SRDOperating
Ambient
temperature
–40125°C
TJ_125 Grade(3)SRPJunction
temperature
under bias
TA<br

Table 5. Operating conditions
-------------------------------------

Unit
SymbolCParameterConditionsMinTyp
VSS_HV_ADR_S
VSS_HV_ADV
SRDVSS_HV_ADR_S
differential
voltage
–25
VRAMP_HVSRDSlew rate on
HV power
supply
VINSRPI/O input
voltage range
0
IINJ1SRTInjection
current (per
pin) without
performance
degradation(7)
(8) (9)
Digital pins and
analog pins
–3.0
IINJ2SRDDynamic
Injection
current (per
pin) with
performance
degradation(9)
(10)
Digital pins and
analog pins
–10

Table 5. Operating conditions (continued)

  1. The ranges in this table are design targets and actual data may vary in the given range.

  2. Maximum operating frequency is applicable to the cores and platform of the device. See the Clock Chapter in the Microcontroller Reference Manual for more information on the clock limitations for the various IP blocks on the device.

  • 3. In order to evaluate the actual difference between ambient and junction temperatures in the application, refer to Section 5.5: Package thermal characteristics.
    1. Core voltage as measured on device pin to guarantee published silicon performance.
    1. Core voltage can exceed 1.26 V with the limitations provided in Section 4.2: Absolute maximum ratings, provided that HVD134_C monitor reset is disabled.
    1. 1.260 V 1.290 V range allowed periodically for supply with sinusoidal shape and average supply value below or equal to 1.236 V at the given temperature profile.
    1. Full device lifetime. I/O and analog input specifications are only valid if the injection current on adjacent pins is within these limits. See Section 4.2: Absolute maximum ratings for maximum input current for reliability requirements.
    1. The I/O pins on the device are clamped to the I/O supply rails for ESD protection. When the voltage of the input pins is above the supply rail, current will be injected through the clamp diode to the supply rails. For external RC network calculation, assume typical 0.3 V drop across the active diode. The diode voltage drop varies with temperature.
  • 9. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
    1. Positive and negative Dynamic current injection pulses are allowed up to this limit. I/O and ADC specifications are not granted. See the dedicated chapters for the different specification limits. See the Absolute Maximum Ratings table for maximum input current for reliability requirements. Refer to the following pulses definitions: Pulse1 (ISO 7637-2:2011), Pulse 2a(ISO 7637-2:2011 5.6.2), Pulse 3a (ISO 7637-2:2011 5.6.3), Pulse 3b (ISO 7637-2:2011 5.6.3).

4.3.1 Power domains and power up/down sequencing

The following table shows the constraints and relationships for the different power domains. Supply1 (on rows) can exceed Supply2 (on columns), only if the cell at the given row and column is reporting 'ok'. This limitation is valid during power-up and power-down phases, as well as during normal device operation.

Supply2
VDD_LV
Supply1VDD_HV_IO_ETHok
VDD_HV_IO_MAIN
VDD_HV_FLA
VDD_HV_OSC
ok
VDD_HV_ADVok
VDD_HV_ADRok

Table 6. Device supply relation during power-up/power-down sequence

During power-up, all functional terminals are maintained in a known state as described in the device pinout Microsoft Excel file attached to the IO_Definition document.

4.4 Electrostatic discharge (ESD)

The following table describes the ESD ratings of the device:

  • All ESD testing are in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.

  • Device failure is defined as: "If after exposure to ESD pulses, the device does not meet the device specification requirements, which include the complete DC parametric and functional testing at room temperature and hot temperature, maximum DC parametric variation within 10 % of maximum specification".

  • Parameter

  • ESD for Human Body Model (HBM)(1)

  • ESD for field induced Charged Device Model (CDM)(2)

  1. This parameter tested in conformity with ANSI/ESD STM5.1-2007 Electrostatic Discharge Sensitivity Testing.

  2. This parameter tested in conformity with ANSI/ESD STM5.3-1990 Charged Device Model - Component Level.

4.5 Electromagnetic compatibility characteristics

EMC measurements at IC-level IEC standards are available from STMicroelectronics on request.

4.6 Temperature profile

The device is qualified in accordance to AEC-Q100 Grade1 requirements, such as HTOL 1,000 h and HTDR 1,000 hrs, TJ = 150 °C.

4.7 Device consumption

SymbolCParameterConditionsMinTypMaxUnit
Value$^{(1)}$
MinTypMaxUnit
IDD_LKG$^{(2),(3)}$CCLeakage current on the V$_{DD_LV}$ supplyT$_{J}$ = 40 °C7mA
T$_{J}$ = 25 °C1.55mA
T$_{J}$ = 55 °C10mA

Table 8. Device consumption

| Symbol | C | Parameter | Conditions | Value(1) | Unit | |---|---|---|---|:---:|:---:|:---:|---| | | | | | Min | Typ | Max | | | IDD_LKG$^{(2),(3)}$ | CC | C | Leakage current on the V${DD_LV}$ supply | T${J}$ = 40 °C | — | — | 7 | mA | | | | D | | T${J}$ = 25 °C | — | 1.5 | 5 | mA | | | | D | | T${J}$ = 55 °C | — | — | 10 | mA | | | |

Table 8. Device consumption (continued)
---------------------------------------------

1. The ranges in this table are design targets and actual data may vary in the given range.

    1. The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered, and they are computed in the dynamic IDD_LV and IDD_HV parameters.
  • 3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the consumption contributors. The tests used in validation, characterization and production are verifying that the total consumption (leakage+dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG + IDD_LV). The two parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions and the software profile used.
  • 4. Use case: 1 x e200Z4 @120 MHz, HSM @60 MHz, all IPs clock enabled, Flash access with prefetch disabled, Flash consumption includes parallel read and program/erase, all SARADC in continuous conversion, DMA continuously triggered by ADC conversion, 2 DSPI / 8 CAN / 2 LINFlex transmitting, RTC and STM running, 1 x EMIOS running (4 channels in OPWMT mode), FIRC, SIRC, FXOSC, PLL0-1 running. The switching activity estimated for dynamic consumption does not include I/O toggling, which is highly dependent on the application. Details of the software configuration are available separately. The total device consumption is IDD_LV + IDD_HV + IDD_LKG for the selected temperature.
  • 5. Gateway use case: One core running at 120 MHz, HSM 40 MHz, DMA, PLL, FLASH read only 25%, 8xCAN, 1xSARADC.
  • 6. BCM use case: One Core running at 80 MHz, HSM 40 MHz, DMA, PLL, FLASH read only 25%, 1xCAN, 3xSARADC.
    1. Dynamic consumption of the HSM module, including the dedicated memories, during the execution of Electronic Code Book crypto algorithm on 1 block of 16 byte of shared RAM.
    1. Flash in Low Power. Sysclk at 120 MHz, HSM 60 MHz, PLL0_PHI at 400 MHz, XTAL at 40 MHz, FIRC 16 MHz ON, RCOSC1M off. FlexCAN: instances: 0, 1, 2, 3, 4, 5, 6, 7 ON (configured but no reception or transmission), Ethernet ON (configured but no reception or transmission), ADC ON (continuously converting). All others IPs clock-gated.
    1. Sysclk = RC16 MHz, RC16 MHz ON, RC1 MHz ON, PLL OFF. All possible peripherals off and clock gated. Flash in power down mode.
  • 10. STANDBY mode: device configured for minimum consumption, RC16 MHz off, RC1 MHz on.

    1. SSWU1 mode adder: FIRC = ON, SSWU clocked at 8 MHz and running over all STANDBY period, ADC off. The total standby consumption can be obtained by adding this parameter to the IDDSTBY parameter for the selected memory size and temperature.
    1. SSWU2 mode adder: FIRC = ON, SSWU clocked at 8 MHz and running over all STANDBY period, ADC on in continuous conversion. The total standby consumption can be obtained by adding this parameter to the IDDSTBY parameter for the selected memory size and temperature.

4.8 I/O pad specification

The following table describes the different pad type configurations.

Pad typeDescription
Weak configurationProvides a good compromise between transition time and low electromagnetic emission.
Medium configurationProvides transition fast enough for the serial communication channels with controlled
current to reduce electromagnetic emission.
Strong configurationProvides fast transition speed; used for fast interface.
Very strong
configuration
Provides maximum speed and controlled symmetric behavior for rise and fall transition.
Used for fast interface including Ethernet interface requiring fine control of rising/falling
edge jitter.
Differential
configuration
A few pads provide differential capability providing very fast interface together with good
EMC performances.
Input only padsThese low input leakage pads are associated with the ADC channels.
Standby padsThese pads (LP pads) are active during STANDBY. They are configured in CMOS level
logic and this configuration cannot be changed. Moreover, when the device enters the
STANDBY mode, the pad-keeper feature is activated for LP pads. It means that:
– if the pad voltage level is above the pad keeper high threshold, a weak pull-up resistor
is automatically enabled
– if the pad voltage level is below the pad keeper low threshold, a weak pull-down resistor
is automatically enabled.
For the pad-keeper high/low thresholds, consider(VDD_HV_IO_MAIN / 2) +/-20 %.

Table 9. I/O pad specification descriptions
-----------------------------------------------------

Note: Each I/O pin on the device supports specific drive configurations. See the signal description table in the device reference manual for the available drive configurations for each I/O pin. PMC_DIG_VSIO register has to be configured to select the voltage level (3.3 V or 5.0 V) for each IO segment.

Logic level is configurable in running mode while it is CMOS not-configurable in STANDBY for LP (low power) pads, so if a LP pad is used to wakeup from STANDBY, it should be configured as CMOS also in running mode in order to prevent device wrong behavior in STANDBY.

4.8.1 I/O input DC characteristics

The following table provides input DC electrical characteristics, as described in Figure 3.

Figure 3. I/O input electrical characteristics
  • TTL
  • Vihttl
  • Vilttl
  • Vhysttl
  • CMOS
  • Vihcmos
  • Vilcmos
  • Vhyscmos
  • COMMON
  • ILKG
  • ILKG
  • ILKG

SymbolParameter
Conditions
C
CP1CCDPad
capacitance
VdriftCCDInput Vil/Vih
temperature
drift
WFISRCWakeup input
filtered pulse(1)
WNFISRCWakeup input
not filtered
pulse(1)

Table 10. I/O input electrical characteristics (continued)

1. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature.

SymbolCParameterConditionsMinTypMaxUnit
IWPUCCTWeak pull-up current absolute valueVIN = 1.1 V(1)130
CCPVIN = 0.69 *
VDD_HV_IO(2)
15
RWPUCCDWeak Pull-up
resistance
VDD_HV_IO = 5.0 V ±
10%
3393
RW

Table 11. I/O pull-up/pull-down electrical characteristics

1. Maximum current when forcing a change in the pin level opposite to the pull configuration.

2. Minimum current when keeping the same pin level state than the pull configuration.

Note: When the device enters into standby mode, the LP pads have the input buffer switched-on. As a consequence, if the pad input voltage VIN is VSS<VIN<VDD_HV, an additional consumption can be measured in the VDD_HV domain. The highest consumption can be seen around mid-range (VIN ~=VDD_HV/2), 2-3 mA depending on process, voltage and temperature.

This situation may occur if the PAD is used as a ADC input channel, and VSS<VIN<VDD_HV. The applications should ensure that LP pads are always set to VDD_HV or VSS, to avoid the extra consumption. Refer to the device pinout IO definition excel file to identify the lowpower pads which also have an ADC function.

4.8.2 I/O output DC characteristics

Figure 4 provides description of output DC electrical characteristics.

Figure 4. I/O output DC electrical characteristics definition

The following tables provide DC characteristics for bidirectional pads:

  • Table 12 provides output driver characteristics for I/O pads when in WEAK/SLOW configuration.
  • Table 13 provides output driver characteristics for I/O pads when in MEDIUM configuration.
  • Table 14 provides output driver characteristics for I/O pads when in STRONG/FAST configuration.
  • Table 15 provides output driver characteristics for I/O pads when in VERY STRONG/VERY FAST configuration.

Note: 10 %/90 % is the default condition for any parameter if not explicitly mentioned differently.

SymbolCParameterConditionsMinTypMaxUnit
Vol_WCCDOutput low voltage for Weak type PADsIol = 0.5 mA
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 %
0.1*VDDV
Voh_WCCDOutput high voltage for Weak type PADsIoh = 0.5 mA
VDD

| Table 12. WEAK/SLOW I/O output characteristics | |---|---|---|---|---|---|---|---| | Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit | | Vol_W | CC | D | Output low voltage for Weak type PADs | Iol = 0.5 mA
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 0.1*VDD | V | | Voh_W | CC | D | Output high voltage for Weak type PADs | Ioh = 0.5 mA
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 0.9*VDD | — | — | V | | R_W | CC | P | Output impedance for Weak type PADs | VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 380
250 | — | 1040
700 | Ω | | Fmax_W | CC | T | Maximum output frequency for Weak type PADs | CL = 25 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 2 | MHz | | | | | CL = 50 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 1 | MHz | | tTR_W | CC | T | Transition time output pin weak configuration, 10%-90% | CL = 25 pF
VDD = 5.0 V + 10 %
VDD = 3.3 V + 10 % | 25 | — | 120 | ns | | | | | CL = 50 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 50 | — | 240 | ns | | tSKEW_W | CC | T | Difference between rise and fall time, 90%-10% | — | — | 25 | % | | IDCMAX_W | CC | D | Maximum DC current | VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 0.5 | mA |

Table 13. MEDIUM I/O output characteristics

SymbolCParameterConditionsValue
Min
Vol_MCCDOutput low
voltage for
Medium type
PADs
Iol
= 2.0 mA
VDD
=5.0 V ± 10 %
VDD
=3.3 V ± 10 %
Voh_MCCDOutput high
voltage for
Medium type
PADs
Ioh=2.0 mA
VDD
= 5.0 V ± 10 %
VDD
= 3.3 V ± 10 %
0.9*VDD

SymbolCParameterConditionsValue
Min
Output
impedance for
Medium type
PADs
VDD
= 5.0 V ± 10 %
90
R_MCCPVDD
= 3.3 V ± 10 %
60
Fmax_MCCMaximum output
frequency for
Medium type
PADs
CL = 25 pF
VDD
= 5.0 V ± 10 %
VDD
= 3.3 V ± 10 %
TCL = 50 pF
VDD
= 5.0 V ± 10 %
VDD
= 3.3 V ± 10 %
tTR_MCC
tSKEW_MCCTDifference
between rise
and fall time,
90%-10%
IDCMAX_MCCDMaximum DC
current
VDD
= 5.0 V ± 10 %
VDD
= 3.3 V ± 10 %
Table 13. MEDIUM I/O output characteristics (continued)
-----------------------------------------------------------
-----------------------------------------------------------

Table 14. STRONG/FAST I/O output characteristics

SymbolCParameterConditionsValueUnit
MinTypMax
Vol_SCCDOutput low
voltage for
Strong type
PADs
Iol
= 8.0 mA
VDD
= 5.0 V ± 10 %
0.1*VDDV
Iol
= 5.5 mA
VDD
= 3.3 V ± 10 %
0.15*VDDV
Voh_SCCDOutput high
voltage for
Strong type
PADs
Ioh
= 8.0 mA
VDD
= 5.0 V ± 10 %
0.9*VDDV
Ioh
= 5.5 mA
VDD
= 3.3 V ± 10 %
0.85*VDDV
R_SCCPOutput
impedance for
Strong type
PADs
VDD
= 5.0 V ± 10 %
2065
VDD
= 3.3 V ± 10 %
2890Ω

SymbolCParameterConditionsValue
Min
Fmax_SCCMaximum output
frequency for
Strong type
PADs
CL = 25 pF
VDD=5.0 V ± 10 %
TCL = 50 pF
VDD=5.0 V ± 10 %
CL = 25 pF
VDD
= 3.3 V ± 10 %
CL = 50 pF
VDD
= 3.3 V ± 10 %
tTR_SCCTTransition time
output pin
STRONG
configuration,
10%-90%
CL = 25 pF
VDD
= 5.0 V ± 10 %
3
CL = 50 pF
VDD
= 5.0 V ± 10 %
5
CL = 25 pF
VDD
= 3.3 V ± 10 %
1.5
CL = 50 pF
VDD
= 3.3 V ± 10 %
2.5
IDCMAX_SCCDMaximum DC
current
VDD
= 5 V ± 10 %
VDD
= 3.3 V ± 10 %
tSKEW_SCCTDifference
between rise
and fall time,
90 %-10 %

Table 15. VERY STRONG/VERY FAST I/O output characteristics

SymbolCParameterConditionsValue
Min
Vol_V
CC
Output low
voltage for Very
Strong type
PADs
Iol
= 9.0 mA
VDD
=5.0 V ± 10 %
DIol
= 9.0 mA
VDD
=3.3 V ± 10 %
Voh_VCC
D
Output high
voltage for Very
Ioh
= 9.0 mA
VDD
= 5.0 V ± 10 %
0.9*VDD
Strong type
PADs
R_VCCPOutput
impedance for
Very Strong type
PADs
VDD
= 5.0 V ± 10 %
20
VDD
= 3.3 V ± 10 %
18

Value
SymbolCParameterConditionsMin
Fmax_V
CC
Maximum output
frequency for
Very Strong type
PADs
CL = 25 pF
VDD
= 5.0 V ± 10 %
TCL = 50 pF
VDD
= 5.0 V ± 10 %
CL = 25 pF
VDD
= 3.3 V ± 10 %
CL = 50 pF
VDD
= 3.3 V ± 10 %
10–90%
threshold
transition time
output pin VERY
STRONG
configuration
CL = 25 pF
VDD
= 5.0 V ± 10 %
1
CCTCL = 50 pF
VDD
= 5.0 V ± 10 %
3
tTR_VCL = 25 pF
VDD
= 3.3 V ± 10 %
1.5
CL = 50 pF
VDD
= 3.3 V ± 10 %
3
T20–80%
threshold
transition time
CL = 25 pF
VDD
= 5.0 V ± 10 %
0.8
tTR20-80_VCCoutput pin VERY
STRONG
configuration
tTRTTL_VCCTTTL threshold
transition time
for output pin in
VERY STRONG
configuration
(Ethernet
standard)
CL = 25 pF
VDD
= 3.3 V ± 10 %
0.88
tTR20-80_VTSum of
transition time
20–80% output
pin VERY
STRONG
configuration
CL = 25 pF
VDD
= 5.0 V ± 10 %
CCCL = 15 pF
VDD
= 3.3 V ± 10 %
tSKEW_VCCTDifference
between rise
and fall delay
CL = 25 pF
VDD
= 5.0 V ± 10 %
0
IDCMAX_VCCDMaximum DC
current
VDD
= 5.0 V±10 %
VDD
= 3.3 V ± 10 %

Table 15. VERY STRONG/VERY FAST I/O output characteristics (continued)

4.8.3 I/O pad current specifications

The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a VDD/VSS supply pair as described in the device pinout Microsoft Excel file attached to the IO_Definition document.

Table 16 provides I/O consumption figures.

In order to ensure device reliability, the average current of the I/O on a single segment should remain below the IRMSSEG maximum value.

In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single segment should remain below the IDYNSEG maximum value.

Pad mapping on each segment can be optimized using the pad usage information provided on the I/O Signal Description table.

SymbolCParameterConditionsMinTypMaxUnit
Average consumption(2)
IRMSSEGSRDSum of all the DC I/O current within a supply segment80mA
IRMS_WCCDRMS I/O current for WEAK configurationCL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 %1.1
CL = 50 pF, 1 MHz, VDD = 5

Table 16. I/O consumption

SymbolCDParameterConditionsMinTypMaxUnit
Average consumption(2)
IRMSSEGSRDSum of all the DC I/O current within a supply segment80mA
IRMS_WCCDRMS I/O current for WEAK configurationCL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 %1.1mA
CL = 50 pF, 1

Table 16. I/O consumption (continued)

Electrical characteristics SPC584Bx

SymbolCDParameterConditionsValue(1)Unit
MinTypMax
Average consumption(2)
IRMSSEGSRDSum of all the DC I/O current within a supply segment80mA
IRMS_WCCDRMS I/O current for WEAK configurationCL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 %1.1mA

Table 16. I/O consumption (continued)

  1. I/O current consumption specifications for the 4.5 V VDD_HV_IO 5.5 V range are valid for VSIO_[VSIO_xx] = 1, and VSIO[VSIO_xx] = 0 for 3.0 V VDD_HV_IO 3.6 V.

  2. Average consumption in one pad toggling cycle.

  3. Stated maximum values represent peak consumption that lasts only a few ns during I/O transition. When possible (timed output) it is recommended to delay transition between pads by few cycles to reduce noise and consumption.

4.9 Reset pad (PORST) electrical characteristics

The device implements dedicated bidirectional reset pins as below specified. PORST pin does not require active control. It is possible to implement an external pull-up to ensure correct reset exit sequence. Recommended value is 4.7 K.

Figure 5. Startup reset requirements

Figure 6 describes device behavior depending on supply signal on PORST:

    1. PORST low pulse has too low amplitude: it is filtered by input buffer hysteresis. Device remains in current state.
    1. PORST low pulse has too short duration: it is filtered by low pass filter. Device remains in current state.
    1. PORST low pulse is generating a reset:
    • a) PORST low but initially filtered during at least WFRST. Device remains initially in current state.
    • b) PORST potentially filtered until WNFRST. Device state is unknown. It may either be reset or remains in current state depending on extra condition (temperature, voltage, device).
    • c) PORST asserted for longer than WNFRST. Device is under reset.

Figure 6. Noise filtering on reset signal

Table 17. Reset PAD electrical characteristics

SymbolCParameterConditionsValue
Min
VIHRESSRPInput high level
TTL
VDD_HV
= 5.0 V ± 10 %
VDD_HV
= 3.3 V ± 10 %
2
VILRESSRPInput low levelVDD_HV
= 5.0 V ± 10 %
-0.3
TTLVDD_HV
= 3.3 V ± 10 %
-0.3
VHYSRESCCCInput hysteresisVDD_HV
= 5.0 V ± 10 %
0.3
TTLVDD_HV
= 3.3 V ± 10 %
0.2
VDD_PORCCDMinimum supplyVDD_HV
= 5.0 V ± 10 %
for strong pull
down activation
VDD_HV
= 3.3 V ± 10 %
SymbolCPParameterConditionsMinTypMaxUnit
VIHRESSRPInput high level TTLVDD_HV = 5.0 V ± 10 %
VDD_HV = 3.3 V ± 10 %
2VDD_HV_IO +0.3V
VILRESSRPInput low level TTLVDD_HV = 5.0 V ± 10 %
VDD_HV = 3.3 V ± 10 %
-0.30.8
0.6
V
VHYSHRESCCCInput hysteresis TTLVDD_HV = 5.0 V ± 10 %
VDD_HV = 3.3 V ± 10 %
0.3
0.2
V
VDD_PORCCDMinimum supply for strong pull-down activationVDD_HV = 5.0 V ± 10 %
VDD_HV = 3.3 V ± 10 %
1.6
1.05
V
  1. Iol_r applies to PORST: Strong Pull-down is active on PHASE0 for PORST. Refer to the device pinout IO definition excel file for details regarding pin usage.

2. Maximum current when forcing a change in the pin level opposite to the pull configuration.

  1. Minimum current when keeping the same pin level state than the pull configuration.

Table 18. Reset PAD state during power-up and reset

PADPOWER-UP StateRESET stateDEFAULT state(1)STANDBY state
PORSTStrong pull-downWeak pull-downWeak pull-downWeak pull-up
  1. Before SW Configuration. Refer to the Device Reference Manual, Reset Generation Module (MC_RGM) Functional Description chapter for the details of the power-up phases.

4.10 PLLs

Two phase-locked loop (PLL) modules are implemented to generate system and auxiliary clocks on the device.

Figure 7 depicts the integration of the two PLLs. Refer to device Reference Manual for more detailed schematic.

4.10.1 PLL0

Table 19. PLL0 electrical characteristics

SymbolCParameterConditionsMinTypMaxUnit
fPLL0INSRPLL0 input clock(1)844MHz
PLL0INSRPLL0 input clock duty
cycle(1)
4060%
fINFINSRPLL0 PFD (Phase
Frequency Detector) input
clock frequency
820MHz
fPLL0VCOCCPPLL0 VCO frequency600

SymbolCParameterConditionsMinTypMaxUnit
fPLL0INSRPLL0 input clock(1)844MHz
ΔPLL0INSRPLL0 input clock duty cycle(1)4060%
fINFINSRPLL0 PFD (Phase Frequency Detector) input clock frequency820MHz
fPLL0VCOCCPPLL0 VCO frequency6001400MHz

Table 19. PLL0 electrical characteristics (continued)

1. PLL0IN clock retrieved directly from either internal RCOSC or external FXOSC clock. Input characteristics are granted when using internal RCOSC or external oscillator is used in functional mode.

  1. If the PLL0_PHI1 is used as an input for PLL1, then the PLL0_PHI1 frequency shall obey the maximum input frequency limit set for PLL1 (87.5 MHz, according to Table 20).

3. Jitter values reported in this table refer to the internal jitter, and do not include the contribution of the divider and the path to the output CLKOUT pin.

4. VDD_LV noise due to application in the range VDD_LV = 1.20 V±5 %, with frequency below PLL bandwidth (40 kHz) will be filtered.

4.10.2 PLL1

PLL1 is a frequency modulated PLL with Spread Spectrum Clock Generation (SSCG) support.

SymbolValueUnit
CParameterConditionsMinTypMax
fPLL1INSRPLL1 input clock(1)37.587.5MHz
PLL1INSRPLL1 input clock duty
cycle(1)
3565%
fINFINSRPLL1 PFD (Phase
Frequency Detector)
input clock frequency
37.587.5MHz
fPLL1VCOCCPPLL1 VCO frequency6001400MHz
fPLL1PHI0CCDPLL1 output clock PHI04.762FSYS(2)MHz
tPLL1LOCKCCPPLL1 lock time50μs
fPLL1MODCCTPLL1 modulation
frequency
250kHz
PLL1MODCCTPLL1 modulation depth
(when enabled)
Center spread(3)0.252%
Down spread0.54%
PLL1PHI0SPJ
(4)
CCTPLL1_PHI0 single period
peak to peak jitter
fPLL1PHI0 =
200 MHz, 6-sigma
500(5)ps
IPLL1CCDPLL1 consumptionFINE LOCK state5mA
Table 20. PLL1 electrical characteristics
-------------------------------------------------
  1. PLL1IN clock retrieved directly from either internal PLL0 or external FXOSC clock. Input characteristics are granted when using internal PPL0 or external oscillator is used in functional mode.

  2. Refer to Section 4.3: Operating conditions for the maximum operating frequency.

  3. The device maximum operating frequency FSYS (max) includes the frequency modulation. If center modulation is selected, the FSYS must be below the maximum by MD (Modulation Depth Percentage), such that FSYS(max)=FSYS(1+MD %). Refer to the Reference Manual for the PLL programming details.

  4. Jitter values reported in this table refer to the internal jitter, and do not include the contribution of the divider and the path to the output CLKOUT pin.

  5. 1.25 V±5 %, application noise below 40 kHz at VDD_LV pin - no frequency modulation.

4.11 Oscillators

4.11.1 Crystal oscillator 40 MHz

Table 21. External 40 MHz oscillator electrical specifications

SymbolCTypeParameterConditionsMinMaxUnit
fXTALCCDCrystal Frequency Range(1)4(2)8MHz
>820
>2040
tcstCCTCrystal start-up time (3),(4)TJ = 150 °C5ms
trecCCDCrystal recovery time(5)0.5ms
VIHEXTCCD

SymbolCTypeParameterConditionsMinMaxUnit
fXTALCCDCrystal Frequency Range(1)4(2)8MHz
>820
>2040
tcstCCTCrystal start-up time (3),(4)TJ = 150 °C5ms
trecCCDCrystal recovery time(5)0.5ms
VIHEXTCC

Table 21. External 40 MHz oscillator electrical specifications (continued)

  1. The range is selectable by UTEST miscellaneous DCF client XOSC_FREQ_SEL.

  2. The XTAL frequency, if used to feed the PPL0 (or PLL1), shall obey the minimum input frequency limit set for PLL0 (or PLL1).

  3. This value is determined by the crystal manufacturer and board design, and it can potentially be higher than the maximum provided.

    1. Proper PC board layout procedures must be followed to achieve specifications.
    1. Crystal recovery time is the time for the oscillator to settle to the correct frequency after adjustment of the integrated load capacitor value.
  • 6. Applies to an external clock input and not to crystal mode.
  • 7. See crystal manufacturer's specification for recommended load capacitor (CL) values.The external oscillator requires external load capacitors when operating from 8 MHz to 16 MHz. Account for on-chip stray capacitance (CS_EXTAL/CS_XTAL) and PCB capacitance when selecting a load capacitor value. When operating at 20 MHz/40 MHz, the integrated load capacitor value is selected via S/W to match the crystal manufacturer's specification, while accounting for on-chip and PCB capacitance.
  • 8. Amplitude on the EXTAL pin after startup is determined by the ALC block, that is the Automatic Level Control Circuit. The function of the ALC is to provide high drive current during oscillator startup, but reduce current after oscillation in order to reduce power, distortion, and RFI, and to avoid over driving the crystal. The operating point of the ALC is dependent on the crystal value and loading conditions.
    1. IXTAL is the oscillator bias current out of the XTAL pin with both EXTAL and XTAL pins grounded. This is the maximum current during startup of the oscillator.

4.11.2 Crystal Oscillator 32 kHz

  • fsxosc
  • gmsxosc
  • Vsxosc
  • Isxoosc
  • Tsxosc

Table 22. 32 kHz external slow oscillator electrical specifications

4.11.3 RC oscillator 16 MHz

Table 23. Internal RC oscillator electrical specifications
-------------------
SymbolC
fTargetCCD
fvar_noTCCP
fvar_TCCT
fvar_SWT
Tstart_noTCCT
Tstart_TCCT
IFIRCCCT

4.11.4 Low power RC oscillator

SymbolParameterConditions
C
FsircCCTSlow Internal
RC oscillator
frequency
fvar_TCCPFrequency
variation across
temperature
–40 °C < T <
150 °C
fvar_VCCPFrequency
variation across
voltage
–40 °C < T <
150 °C
IsircCCTSlow Internal
RC oscillator
current
T = 55 °C
TsircCCTStart up time,
after switching
ON the internal
regulator.

Table 24. 1024 kHz internal RC oscillator electrical characteristics

4.12 ADC system

4.12.1 ADC input description

Figure 8 shows the input equivalent circuit for SARn and SARB channels.

Figure 8. Input equivalent circuit (Fast SARn and SARB channels)

All specifications in the following table valid for the full input voltage range for the analog inputs.

SymbolCDParameterConditionsMinMaxUnit
R20KCCDInternal voltage reference source impedance.1630K
ILKGCCInput leakage current, two ADC channels on input-only pin.See IO chapter Table 10: I/O input electrical characteristics, parameter ILKG.
IINJ1SRInjection current on analog input preserving functionality at full or degraded performances.See Operating Conditions chapter Table 5: Operating conditions, IINJ1 parameter.
CHV_ADCSRDVDD_HV_ADV external capacitance.See Power Management chapter Table 33: External components integration, CADC parameter.
CP1CCDPad capacitanceSee IO chapter Table 10: I/O input

Table 25. ADC pin specification

SymbolCParameterConditionsValueUnit
MinMax
R20KΩCCInternal voltage reference source impedance.1630
ILKGCCInput leakage current, two ADC channels on input-only pin.See IO chapter Table 10: I/O input electrical characteristics, parameter ILKG.
IINJ1SRInjection current on analog input preserving functionality at full or degraded performances.See Operating Conditions chapter Table 5: Operating conditions, IINJ1 parameter.
CHV_ADCSRVDD_HV_ADV external capacitance.See Power Management chapter Table 33: External components integration, CADC parameter.
CP1CCPad capacitanceSee IO chapter Table 10: I/O input electrical characteristics, parameter CP1.
  1. It enables discharge of up to 100 nF from 5 V every 300 ms. Refer to the device pinout Microsoft Excel file attached to the IO_Definition document for the pads supporting it.

4.12.2 SAR ADC 12 bit electrical specification

The SARn ADCs are 12-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing.

Note: The functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the listed maximum may affect device reliability or cause permanent damage to the device.

SymbolCParameterConditionsMinMaxUnit
CP2CCInternal routing capacitanceSARB channels2pF
SARn 10bit channels0.5pF
SARn 12bit channels1pF
CSCCSAR ADC sampling capacitanceSARn 12bit5pF
SARn 10bit2pF
RSWnCCAnalog switches resistanceSARB channels01.8
SARn 10bit channels00.8
SARn 12bit channels01.8
RADCCADC input analog switches resistanceSARn 12bit0.8
SARn 10bit3.2
RCMSWCCCommon mode switch resistanceSum of the two resistances9
RCMRLCCCommon mode resistive ladder9
RSAFEPD(1)CCDischarge resistance for ADC input-only pins (strong pull-down for safety)VDD_HV_IO = 5.0 V ± 10 %300W
VDD_HV_IO = 3.3 V ± 10 %500W
ABGAPCCADC digital bandgap accuracy-1.5+1.5%
CEXTSRExternal capacitance at the pad input pinTo preserve the accuracy of the ADC, it is necessary that analog input pins have low AC impedance. Placing a capacitor with good high frequency characteristics at the input pin of the device can be
Table 26. SARn ADC electrical specification
---------------------------------------------

SymbolCPParameterConditionsValue MinValue MaxUnit
fADCKSRPClock frequencyStandard frequency mode7.513.33MHz
THigh frequency mode>13.3316.0
tADCINITSR-ADC initialization time-1.5-µs
tADCBISINITSR-ADC BIAS initialization time-5-µs
tADCPRECHSRTADC decharge timeFast SAR1/fADCK-µs
Slow SAR (SARDAC_B)2/fADCK-
ΔVPRECHSRDDecharge voltage precisionTJ < 150 °C00.25V
R20KΩCCDInternal voltage reference source impedance-1630
ΔVINTREFCCPInternal reference voltage precisionApplies to all internal reference points (VSS_HV_ADR, 1/3 * VDD_HV_ADR, 2/3 * VDD_HV_ADR, VDD_HV_ADR)-0.200.20V

SymbolCParameterConditionsMinMaxUnit
fADCKSRClock frequencyStandard frequency mode7.513.33MHz
High frequency mode>13.3316.0
tADCINITSRADC initialization time1.5μs
tADCBISINITSRADC BIAS initialization time5μs
tADCPRECHSRADC decharge timeFast SAR1/fADCKμs
Slow SAR (SARDAC_B)2/fADCK
ΔVPRECHSRDecharge voltage precisionTJ < 150 °C00.25V
R20KΩCCInternal voltage reference source impedance1630
ΔVINTREFCCInternal reference voltage precisionApplies to all internal reference points (VSS_HV_ADR, 1/3 * VDD_HV_ADR, 2/3 * VDD_HV_ADR, VDD_HV_ADR)-0.200.20V
SymbolCParameterConditionsValueUnit
MinMax
fADCKSRPClock frequency
Standard frequency mode7.513.33MHz
THigh frequency mode>13.3316.0
tADCINITSRADC initialization time1.5µs
tADCBISINITSRADC BIAS initialization time5µs
tADCPRECH

| Table 26. SARn ADC electrical specification | | :------- | :-- | :-------------------------------------- | 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-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

  1. Minimum ADC sample times are dependent on adequate charge transfer from the external driving circuit to the internal sample capacitor. The time constant of the entire circuit must allow the sampling capacitor to charge within 1/2 LSB within the sampling window. Refer to Figure 8 for models of the internal ADC circuit, and the values to use in external RC sizing and calculating the sampling window duration.

2. Mode1: 6 sampling cycles + 10 conversion cycles at 13.33 MHz.

3. Mode2: 5 sampling cycles + 10 conversion cycles at 13.33 MHz.

4. Mode3: 6 sampling cycles + 10 conversion cycles at 16 MHz.

  1. IADCREFH and IADCREFL are independent from ADC clock frequency. It depends on conversion rate: consumption is driven by the transfer of charge between internal capacitances during the conversion.

6. Current parameter values are for a single ADC.

  • 7. TUE is granted with injection current within the range defined in Table 25, for parameters classified as T and D.
    1. DNL is granted with injection current within the range defined in Table 25, for parameters classified as T and D.

4.12.3 SAR ADC 10 bit electrical specification

The ADC comparators are 10-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing.

Note: The functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the listed maximum may affect device reliability or cause permanent damage to the device.

SymbolCPParameterConditionsMinMaxUnit
Value
MinMax
fADCKSRPClock frequencyStandard frequency mode7.513.33MHz
THigh frequency mode>13.3316.0
tADCINITSRADC initialization time1.5μs
tADCBIASINITSRADC BIAS initialization time5

SymbolCParameterConditionsValue MinValue MaxUnit
fADCKSRClock frequencyStandard frequency mode7.513.33MHz
PHigh frequency mode>13.3316.0
T
tADCINITSRADC initialization time1.5μs
tADCBIA SINITSRADC BIAS initialization time5μs
tADCINITSBYSRADC initialization time in standby

Table 27. ADC-Comparator electrical specification (continued)

SymbolCParameterConditionsMinMaxUnit
fADCKSRPClock frequency7.513.33MHz
THigh frequency mode>13.3316.0
tADCINITSRADC initialization time1.5µs
tADCBASINITSRADC BIAS initialization time5µs
tADCINITSBYSRADC initialization time in standby8µs
tADCPRECH
Table 27. ADC-Comparator electrical specification (continued)
  1. Minimum ADC sample times are dependent on adequate charge transfer from the external driving circuit to the internal sample capacitor. The time constant of the entire circuit must allow the sampling capacitor to charge within 1/2 LSB within the sampling window. Refer to Figure 8 for models of the internal ADC circuit, and the values to use in external RC sizing and calculating the sampling window duration.

  2. IADCREFH and IADCREFL are independent from ADC clock frequency. It depends on conversion rate: consumption is driven by the transfer of charge between internal capacitances during the conversion.

  3. Current parameter values are for a single ADC.

4. All channels of all SAR-ADC12bit and SAR-ADC10bit are impacted with same degradation, independently from the ADC and the channel subject to current injection.

  1. TUE is granted with injection current within the range defined in Table 25, for parameters classified as T and D.

  2. DNL is granted with injection current within the range defined in Table 25, for parameters classified as T and D.

4.13 Temperature sensor

The following table describes the temperature sensor electrical characteristics.

| | | | | | Value | Unit | |---|---|---|---|---|---|---|---| | Symbol | | C | Parameter | Conditions | Min | Typ | Max | Unit | | — | CC | — | Temperature monitoring range | — | –40 | — | 150 | °C | | TSENS | CC | T | Sensitivity | — | — | 5.18 | — | mV/°C | | TACC | CC | P | Accuracy | TJ < 150 °C | –3 | — | 3 | °C |

Table 28. Temperature sensor electrical characteristics

4.14 LFAST pad electrical characteristics

The LFAST(LVDS Fast Asynchronous Serial Transmission) pad electrical characteristics apply to high-speed debug serial interfaces on the device.

4.14.1 LFAST interface timing diagrams

Figure 9. LFAST LVDS timing definition

Figure 11. Rise/fall time

4.14.2 LFAST LVDS interface electrical characteristics

The following table contains the electrical characteristics for the LFAST interface.

Table 29. LVDS pad startup and receiver electrical characteristics(1),(2)
---------------------------------------------------------------------------
CParameterValue
SymbolSTARTUP(3),(4)ConditionsMin
tSTRT_BIASCCTBias current reference startup
time(5)
tPD2NM_TXCCTTransmitter startup time (power
down to normal mode)(6)

58/142 DS11701 Rev 4

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Value
SymbolCParameter
Conditions
Min
tSM2NM_TXCCTTransmitter startup time (sleep
mode to normal mode)(7)
Not applicable to the
MSC/DSPI LVDS pad
tPD2NM_RXCCTReceiver startup time (power
down to normal mode)(8)
tPD2SM_RXCCTReceiver startup time (power
down to sleep mode)(9)
Not applicable to the
MSC/DSPI LVDS pad
ILVDS_BIASCCDLVDS bias current consumption
TRANSMISSION LINE CHARACTERISTICS (PCB Track)
Tx or Rx enabled
Z0SRDTransmission line characteristic
impedance
47.5
ZDIFFSRDTransmission line differential
impedance
95
RECEIVER
VICOMSRTCommon mode voltage0.15
(10)
VISRTDifferential input voltage(12)100
VHYSCCTInput hysteresis25
RINCCDTerminating resistanceVDD_HV_IO = 5.0 V ±
10 %
-40 °C <tj< 150="" td="" °c<="">
8015080
VDD_HV_IO = 3.3 V ±
10 %
-40 °C <tj
< 150 °C</tj
80
CINCCDDifferential input capacitance(13)
ILVDS_RXCCCReceiver DC current
consumption
Enabled
IPIN_RXCCDMaximum consumption on
receiver input pin
VI
= 400 mV,
RIN
= 80 
Table 29. LVDS pad startup and receiver electrical characteristics(1),(2) (continued)
---------------------------------------------------------------------------------------
---------------------------------------------------------------------------------------
  1. The LVDS pad startup and receiver electrical characteristics in this table apply to both the LFAST & High-speed Debug (HSD) LVDS pad.

  2. All LVDS pad electrical characteristics are valid from -40 °C to 150 °C.

  3. All startup times are defined after a 2 peripheral bridge clock delay from writing to the corresponding enable bit in the LVDS control registers (LCR) of the LFAST and High-speed Debug modules. The value of the LCR bits for the LFAST/HSD modules don't take effect until the corresponding SIUL2 MSCR ODC bits are set to LFAST LVDS mode. Startup times for MSC/DSPI LVDS are defined after 2 peripheral bridge clock delay after selecting MSC/DSPI LVDS in the corresponding SIUL2 MSCR ODC field.

  4. Startup times are valid for the maximum external loads CL defined in both the LFAST/HSD and MSC/DSPI transmitter electrical characteristic tables.

  5. Bias startup time is defined as the time taken by the current reference block to reach the settling bias current after being enabled.

  6. Total transmitter startup time from power down to normal mode is tSTRT_BIAS + tPD2NM_TX + 2 peripheral bridge clock periods.

  7. Total transmitter startup time from sleep mode to normal mode is tSM2NM_TX + 2 peripheral bridge clock periods. Bias block remains enabled in sleep mode.

Electrical characteristics SPC584Bx

    1. Total receiver startup time from power down to normal mode is tSTRT_BIAS + tPD2NM_RX + 2 peripheral bridge clock periods.
    1. Total receiver startup time from power down to sleep mode is tPD2SM_RX + 2 peripheral bridge clock periods. Bias block remains enabled in sleep mode.
    1. Absolute min = 0.15 V (285 mV/2) = 0 V
    1. Absolute max = 1.6 V + (285 mV/2) = 1.743 V
    1. Value valid for LFAST mode. The LXRXOP[0] bit in the LFAST LVDS Control Register (LCR) must be set to one to ensure proper LFAST receive timing.
    1. Total internal capacitance including receiver and termination, co-bonded GPIO pads, and package contributions.
SymbolParameterConditionsValue
CMin
fDATASRDData rate
VOSCCPCommon mode voltage1.08
VODCCPDifferential output voltage swing
(terminated)(4),(5)
110
tTRCCTRise time from - VOD(min) to
+ VOD(min) . Fall time from
+ VOD(min) to - VOD(min)
0.26
CL
SR
DExternal lumped differential loadVDD_HV_IO = 4.5 V
ILVDS_TXCCCTransmitter DC current consumptionEnabled
IPIN_TXCCDTransmitter DC current sourced through
output pin
1.1

Table 30. LFAST transmitter electrical characteristics(1),(2),(3)

  1. This table is applicable to LFAST LVDS pads used in LFAST configuration (SIUL2_MSCR_IO_n.ODC=101).

  2. The LFAST and High-Speed Debug LFAST pad electrical characteristics are based on worst case internal capacitance values shown in Figure 12.

  3. All LFAST and High-Speed Debug LVDS pad electrical characteristics are valid from -40 °C to 150 °C.

4. Valid for maximum data rate fDATA. Value given is the capacitance on each terminal of the differential pair, as shown in Figure 12.

  1. Valid for maximum external load CL.

4.14.3 LFAST PLL electrical characteristics

The following table contains the electrical characteristics for the LFAST PLL.

SymbolCParameterConditionsMinTypMaxUnit
fRF_REFSRDPLL reference clock frequency (CLKIN)10(2)30
ERRREFCCDPLL reference clock frequency error-11
DCREFCCDPLL reference clock duty cycle (CLKIN)3070
PNCCDIntegrated phase noise
(single side band)
fRF_REF = 20 MHz-58
fVCOCCPPLL VCO frequency312320(3)
tLOCKCCDPLL phase lock150(4)

Table 31. LFAST PLL electrical characteristics(1)
-------------------------------------------------------

SymbolCParameterConditionsMinTypMaxUnit
fRF_REFSRD PLL reference clock frequency (CLKIN)10$^{(2)}$30MHz
ERRREFCCD PLL reference clock frequency error-11%
DCREFCCD PLL reference clock duty cycle (CLKIN)3070%
PNCCD Integrated phase noise (single side band)fRF_REF = 20 MHz-58dBc
fVCOCCP PLL VCO frequency312320$^{(3)}$MHz
tLOCKCCD PLL phase lock150$^{(4)}$µs

Table 31. LFAST PLL electrical characteristics(1) (continued)

  1. The specifications in this table apply to both the interprocessor bus and debug LFAST interfaces.

  2. If the input frequency is lower than 20 MHz, it is required to set a input division factor of 1.

  3. The 320 MHz frequency is achieved with a 20 MHz reference clock.

  4. The total lock time is the sum of the coarse lock time plus the programmable lock delay time 2 clock cycles of the peripheral bridge clock that is connected to the PLL on the device (to set the PLL enable bit).

  5. Measured at the transmitter output across a 100 termination resistor on a device evaluation board. See Figure 12.

4.15 Power management

The power management module monitors the different power supplies as well as it generates the required internal supplies. The device can operate in the following configurations:

DeviceExternal
regulator
Internal
SMPS
regulator
Internal
linear
regulator
external
ballast
Internal
linear
regulator
internal
ballast
Auxiliary
regulator
Clamp
regulator
Internal
standby
regulator(1)
SPC584BxX(2)XXXX

  1. Standby regulator is automatically activated when the device enters standby mode.

  2. For compatibility purpose with SPC584Cx/SPC58ECx, or for the optimization of the power dissipation, the operability of the device with external ballast can be used. The external ballast option is available only on specific devices, contact the local sales.

4.15.1 Power management integration

Use the integration schemes provided below to ensure the proper device function, according to the selected regulator configuration.

The internal regulators are supplied by VDD_HV_IO_MAIN supply and are used to generate VDD_LV supply.

Place capacitances on the board as near as possible to the associated pins and limit the serial inductance of the board to less than 5 nH.

It is recommended to use the internal regulators only to supply the device itself.

Figure 13. Internal regulator with external ballast mode

Figure 14. Internal regulator with internal ballast mode

Figure 15. Standby regulator with external ballast mode

Figure 16. Standby regulator with internal ballast mode
Symbol
-----------------------
Common Components
CESR
RESR
CLVnSR
RLVnSR
CBVSR
CHVnSR

Table 33. External components integration

SymbolCParameterConditions(1)MinTypMaxUnit
Common Components
CESRDInternal voltage regulator stability external capacitance(2) (3)1.12.23.0µF
RESRDStability capacitor equivalent serial resistanceTotal resistance including board track50
CLVnSRDInternal voltage regulator decoupling external capacitance(3) (4) (5)Each VDD_LV/VSS pair47
RLVnSRDStability capacitor equivalent serial resistance50
CBVSRDBulk capacitance for HV supply(3)on one VDD_HV_IO_MAIN/ VSS pair4.7
CHVnSRDDecoupling capacitance for ballast and IOs(3)on all VDD_HV_IO/VSS and VDD_HV_ADV/VSS pairs100

Table 33. External components integration (continued)

  1. VDD = 3.3 V ± 10 % / 5.0 V ± 10 %, TJ = –40 / 150 °C, unless otherwise specified.

2. Recommended X7R or X5R ceramic –50 % / +35 % variation across process, temperature, voltage and after aging.

3. CE capacitance is required both in internal and external regulator mode.

4. For noise filtering, add a high frequency bypass capacitance of 10 nF.

  1. For applications it is recommended to implement at least 5 CLV capacitances.

  2. Recommended X7R capacitors. For noise filtering, add a high frequency bypass capacitance of 100 nF.

  3. CB capacitance is required if only the external ballast is implemented.

4.15.2 Voltage regulators

SymbolC
Parameter
Value
ConditionsMin
VMREGCCPPower-up, before
trimming, no load
1.14
CCPMain regulator output voltageAfter trimming,
maximum load
1.09
Main regulator current provided toInternal ballast
IDDMREGCCTVDD_LV domain
The maximum current supported
is the sum of the Main Regulator
and the Auxiliary Regulator
maximum current both regulators
are working in parallel.
External ballast
IDDCLAMPCCDMain regulator rush current
sinked from VDD_HV_IO_MAIN
domain during VDD_LV domain
loading
Power-up condition
IDDMREGCCTMain regulator output current
variation
20 μs observation
window
-100
DMain regulator currentIMREG = max
IMREGINTCCDconsumptionIMREG = 0 mA

Table 34. Linear regulator specifications

Table 35. Auxiliary regulator specifications

SymbolCParameterConditionsMinTypMaxUnit
VAUXCC PAux regulator output voltageAfter trimming, internal
regulator mode
1.091.191.22V
IDDAUXCC TAux regulator current provided to
VDD_LV domain
150mA
IDDAUXCC TAux regulator current variation20 μs observation
window
-100100mA
IAUXINTCC DAux regulator current
consumption
IMREG = max1.1mA
DIMREG = 0 mA1.1mA

Electrical characteristics SPC584Bx

SymbolCParameterConditionsMinTypMaxUnit
VAUXCCPAux regulator output voltageAfter trimming, internal regulator mode1.091.191.22
IDDAUXCCTAux regulator current provided to VDD_LV domain150mA
ΔIDDAUXCCTAux regulator current variation20 μs observation window-100100
IAUXINTCCDAux regulator current consumptionIMREG = max

Table 36. Clamp regulator specifications

Table 37. Standby regulator specifications

SymbolCParameterConditionsMinTypMaxUnit
MinTypMax
VSBYCCPStandby regulator output voltageAfter trimming,
maximum load
1.021.061.26V
IDDSBYCCTStandby regulator current provided to VDD_LV domainExternal Ballast50mA
Internal Ballast10mA

4.15.3 Voltage monitors

The monitors and their associated levels for the device are given in Table 38. Figure 17 illustrates the workings of voltage monitoring threshold.

SymbolCSupply/Parameter(1)ConditionsMinTypMaxUnit
PowerOn Reset HV
VPOR200_CCCPVDD_HV_IO_MAIN1.802.182.40
Minimum Voltage Detectors HV
VMVD270_CCCPVDD_HV_IO_MAIN2.712.762.80
VMVD270

Table 38. Voltage monitor electrical characteristics
SymbolCSupply/Parameter(1)ConditionsMinTypMaxUnit
PowerOn Reset HV
VPOR200_CCCPVDD_HV_IO_MAIN1.802.182.40
Minimum Voltage Detectors HV
VMVD270_CCCPVDD_HV_IO_MAIN2.712.762.80
VMVD270_FCCPVDD_HV_FLA2.712.762.80
VMVD270_SBYCCPVDD_HV_IO_MAIN (in Standby)2.712.762.80
Low Voltage Detectors HV
VLVD290_CCCPVDD_HV_IO_MAIN2.892.942.99
VLVD290_FCCPVDD_HV_FLA2.892.942.99
VLVD290_ASCCPVDD_HV_ADV (ADCSAR pad)2.892.942.99
VLVD290_IFCCPVDD_HV_IO_ETH2.892.942.99
VLVD400_ASCC
  1. Even if LVD/HVD monitor reaction is configurable, the application ensures that the device remains in the operative condition range, and the internal LVDx monitors are disabled by the application. Then an external voltage monitor with minimum threshold of VDD_LV(min) = 1.08 V measured at the device pad, has to be implemented. For HVDx, if the application disables them, then they need to grant that VDD_LV and VDD_HV voltage levels stay withing the limitations provided in Section 4.2: Absolute maximum ratings.

  2. The values reported are Trimmed values, where applicable.

  3. See Figure 17. Transitions shorter than minimum are filtered. Transitions longer than maximum are not filtered, and will be delayed by TVMFILTER time. Transitions between minimum and maximum can be filtered or not filtered, according to temperature, process and voltage variations.

4.16 Flash

The following table shows the Wait state configuration.

APCRWSCFrequency range (MHz)
000(1)0f ≤ 30
1f ≤ 60
2f ≤ 90
3f ≤ 120
100(2)0f ≤ 30
1f ≤ 60
2f ≤ 90
3f ≤ 120
001(3)255 < f ≤ 80
355 < f ≤ 120
  1. STD pipelined, no address anticipation.

  2. No pipeline (STD + 1 Tck).

  3. Pipeline with 1 Tck address anticipation.

The following table shows the Program/Erase characteristics.

Table 40. Flash memory program and erase specifications
---------------------------------------------------------
Value
SymbolCharacteristics(1)(2)Typ(3)
tdwprogramDouble Word (64 bits)
program time [Packaged part]
43
tpprogramPage (256 bits) program time72
tpprogrameepPage (256 bits) program time
Data Flash - EEPROM
(partition 1) [Packaged part]
83
tqprogramQuad Page (1024 bits)
program time
220
tqprogrameepQuad Page (1024 bits)
program time Data Flash -
EEPROM (partition 1)
[Packaged part]
245

Table 40. Flash memory program and erase specifications (continued)
-------------------------------------------------------------------------------------------
SymbolCharacteristics(1)(2)
t16kpperase16 KB block pre-program and
erase time
t32kpperase32 KB block pre-program and
erase time
t64kpperase64 KB block pre-program and
erase time
t128kpperase128 KB block pre-program
and erase time
t256kpperase256 KB block pre-program
and erase time
t16kprogram16 KB block program time
t32kprogram32 KB block program time
t64kprogram64 KB block program time
t128kprogram128 KB block program time
t256kprogram256 KB block program time
t16kprogrameepProgram 16 KB Data Flash -
EEPROM (partition 1)
[Packaged part]
t16keraseeepErase 16 KB Data Flash -
EEPROM (partition 1)
[Packaged part]
t16kprogrameepProgram 16 KB HSM Data
Flash - EEPROM (partition 1)
[Packaged part]
t16keraseeepErase 16 KB HSM Data Flash
- EEPROM (partition 1)
[Packaged part]
tprrProgram rate(8)
tprErase rate(8)
ttprfmProgram rate Factory Mode(8)
terfmErase rate Factory Mode(8)
tffprogramFull flash programming time(9)

Value
SymbolCharacteristics(1)(2)Typ(3)
tfferaseFull flash erasing time(9)9.9
tESRTErase suspend request
rate(10)
tPSRTProgram suspend request
rate(10)
30
tAMRTArray Integrity Check - Margin
Read suspend request rate
15
tPSUSProgram suspend latency(11)
tESUSErase suspend latency(11)
tAIC0SArray Integrity Check (2.0 MB,
sequential)(12)
12.8
tAIC256KSArray Integrity Check (256
KB, sequential)(12)
1.5
tAIC0PArray Integrity Check (2.0 MB,
proprietary)(12)
4.0
tMR0SMargin Read (2.0 MB,
sequential)(12)
35
tMR256KSMargin Read (256 KB,
sequential)(12)
4.0
Table 40. Flash memory program and erase specifications (continued)
---------------------------------------------------------------------
  1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.

  2. Actual hardware operation times; this does not include software overhead.

  3. Typical program and erase times assume nominal supply values and operation at 25 °C.

    1. Typical End of Life program and erase times represent the median performance and assume nominal supply values. Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but not tested.
    1. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.
    1. Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5 %) supply voltages.
    1. Initial maximum "All temp" program and erase times provide guidance for time-out limits used in the factory and apply for less than or equal to 100 program or erase cycles, –40 °C < TJ < 150 °C junction temperature and nominal (± 5 %) supply voltages.
  • 8. Rate computed based on 256 KB sectors.
  • 9. Only code sectors, not including EEPROM.
  • 10. Time between suspend resume and next suspend. Value stated actually represents Min value specification.
  • 11. Timings guaranteed by design.
  • 12. AIC is done using system clock, thus all timing is dependent on system frequency and number of wait states. Timing in the table is calculated at max frequency.

All the Flash operations require the presence of the system clock for internal synchronization. About 50 synchronization cycles are needed: this means that the timings of the previous table can be longer if a low frequency system clock is used.

Characteristics(1) (2)
Symbol
NCER16K16 KB CODE Flash endurance
NCER32K32 KB CODE Flash endurance
NCER64K64 KB CODE Flash endurance
NCER128K128 KB CODE Flash endurance
256 KB CODE Flash endurance
NCER256K256 KB CODE Flash endurance(3)
NDER16K16 KB DATA EEPROM Flash endurance
NDER16K16 KB HSM DATA EEPROM Flash endurance
tDR1kMinimum data retention Blocks with 0 - 1,000 P/E
cycles
tDR10kMinimum data retention Blocks with 1,001 - 10,000
P/E cycles
tDR100kMinimum data retention Blocks with 10,001 - 100,000
P/E cycles
tDR250kMinimum data retention Blocks with 100,001 -
250,000 P/E cycles
Table 41. Flash memory life specification
---------------------------------------------------
  1. Program and erase cycles supported across specified temperature specifications.

  2. It is recommended that the application enables the core cache memory.

  3. 10K cycles on 4-256 KB blocks is not intended for production. Reduced reliability and degraded erase time are possible.

4.17 AC specifications

All AC timing specifications are valid up to 150 °C, except where explicitly noted.

4.17.1 Debug and calibration interface timing

4.17.1.1 JTAG interface timing

SymbolValue(1),(2)Unit
#CCharacteristicMinMax
1tJCYCCCDTCK cycle time100ns
2tJDCCCTTCK clock pulse width4060%
3tTCKRISECCDTCK rise and fall times (40 %–70 %)3ns
4tTMSS, tTDISCCDTMS, TDI data setup time5ns
5tTMSH, tTDIHCCDTMS, TDI data hold time5ns
6tTDOVCCDTCK low to TDO data valid15(3)ns
7tTDOICCDTCK low to TDO data invalid0ns
8tTDOHZCCDTCK low to TDO high impedance15ns
9tJCMPPWCCDJCOMP assertion time100ns
10tJCMPSCCDJCOMP setup time to TCK low40ns
11tBSDVCCDTCK falling edge to output valid600(4)ns
12tBSDVZCCDTCK falling edge to output valid out of high impedance600ns
13tBSDHZ
CC
D
TCK falling edge to output high impedance600ns
14tBSDST
CC
D
Boundary scan input valid to TCK rising edge
15ns
15tBSDHTCCDTCK rising edge to boundary scan input invalid15ns

Table 42. JTAG pin AC electrical characteristics

  1. These specifications apply to JTAG boundary scan only. See Table 43 for functional specifications.

  2. JTAG timing specified at VDD_HV_IO_JTAG = 4.0 to 5.5 V and max. loading per pad type as specified in the I/O section of the datasheet.

  3. Timing includes TCK pad delay, clock tree delay, logic delay and TDO output pad delay.

  4. Applies to all pins, limited by pad slew rate. Refer to IO delay and transition specification and add 20 ns for JTAG delay.

Figure 21. JTAG boundary scan timing

DS11701 Rev 4 79/142

4.17.1.2 Nexus interface timing

SymbolCCharacteristicValue(1)
#Max
7tEVTIPWCCDEVTI pulse width4
8tEVTOPWCCDEVTO pulse width40
9tTCYCTCK cycle time2(3),(4)
CCDAbsolute minimum TCK cycle time(5)
(TDO sampled on posedge of TCK)
Absolute minimum TCK cycle time(7)
(TDO sampled on negedge of TCK)
40(6)
20(6)
11tNTDISCCDTDI data setup time5
12tNTDIHCCDTDI data hold time5
13tNTMSSCCDTMS data setup time5
14tNTMSHCCDTMS data hold time5
15CCDTDO propagation delay from falling edge of TCK(8)16
16CCDTDO hold time with respect to TCK falling edge
(minimum TDO propagation delay)
2.25

Table 43. Nexus debug port timing

  1. Nexus timing specified at VDD_HV_IO_JTAG = 3.0 V to 5.5 V, and maximum loading per pad type as specified in the I/O section of the data sheet.
  • 2. tCYC is system clock period.
    1. Achieving the absolute minimum TCK cycle time may require a maximum clock speed (system frequency / 8) that is less than the maximum functional capability of the design (system frequency / 4) depending on the actual peripheral frequency being used. To ensure proper operation TCK frequency should be set to the peripheral frequency divided by a number greater than or equal to that specified here.
    1. This is a functionally allowable feature. However, it may be limited by the maximum frequency specified by the Absolute minimum TCK period specification.
    1. This value is TDO propagation time 36 ns + 4 ns setup time to sampling edge.
  • 6. This may require a maximum clock speed (system frequency / 8) that is less than the maximum functional capability of the design (system frequency / 4) depending on the actual system frequency being used.
    1. This value is TDO propagation time 16 ns + 4 ns setup time to sampling edge.
    1. Timing includes TCK pad delay, clock tree delay, logic delay and TDO output pad delay.

Figure 23. Nexus event trigger and test clock timings

4.17.1.3 External interrupt timing (IRQ pin)

Table 44. External interrupt timing

CharacteristicSymbolMinMaxUnit
IRQ Pulse Width LowtIPWL3tcyc
IRQ Pulse Width HightIPWH3tcyc
IRQ Edge to Edge Time(1)tICYC6tcyc
  1. Applies when IRQ pins are configured for rising edge or falling edge events, but not both.

4.17.2 DSPI timing with CMOS pads

DSPI channel frequency support is shown in Table 45. Timing specifications are shown in the tables below.

Max usable
frequency
(MHz)(2),(3)
Full duplex – Classic timing (Table 46)
Full duplex – Modified timing (Table 47)
CMOS (Master
mode)Output only mode (SCK/SOUT/PCS) (Table 46 and
Table 47)
Output only mode TSB mode (SCK/SOUT/PCS)
CMOS (Slave mode Full duplex) (Table 48)

  1. Each DSPI module can be configured to use different pins for the interface. Refer to the device pinout Microsoft Excel file attached to the IO_Definition document for the available combinations. It is not possible to reach the maximum performance with every possible combination of pins.

  2. Maximum usable frequency can be achieved if used with fastest configuration of the highest drive pads.

  3. Maximum usable frequency does not take into account external device propagation delay.

4.17.2.1 DSPI master mode full duplex timing with CMOS pads

4.17.2.1.1 DSPI CMOS master mode – classic timing

Note: In the following table, all output timing is worst case and includes the mismatching of rise and fall times of the output pads.

Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1

#SymbolCharacteristicConditionValue(1)
CPad drive(2)Load (CL)Min
1tSCKD SCK cycle timeSCK drive strength
CCVery strong25 pF59.0
Strong50 pF80.0
Medium

ConditionValue(1)
#SymbolCCharacteristicPad drive(2)
SCK and PCS drive strength
Load (CL)MinMax
D PCS to SCKVery strong25 pF(N(3) × tSYS(4))

16
2CCStrong50 pF(N(3) × tSYS(4))

16
tCSCdelayMedium
PCS medium
and SCK
strong
SCK and PCS drive strength
50 pF
PCS = 50 pF
SCK = 50 pF
(N(3) × tSYS(4))

16
(N(3) × tSYS(4))

29

tASC
CC
Very strongPCS = 0 pF
SCK = 50 pF
(M(5) × tSYS(4))

35
3CCD After SCK delay
D SCK duty
Strong
Medium
PCS = 0 pF
SCK = 50 pF
PCS = 0 pF
SCK = 50 pF
SCK drive strength
(M(5) × tSYS(4))

35
(M(5) × tSYS(4))

35
PCS medium
and SCK
strong


PCS = 0 pF
SCK = 50 pF
Very strong0 pF1/2tSCK
– 2
1/2tSCK
+ 2
4tSDCcycle(6)Strong0 pF
PCS strobe timing
1/2tSCK
– 2
1/2tSCK
+ 2
5tPCSCCCD PCSx to PCSSPCS and PCSS drive strength
6tPASCCCD PCSS to PCSxPCS and PCSS drive strength
time(7)Strong
SCK drive strength
25 pF
SIN setup time
16.0
7tSUICCD SIN setup time to
SCK(8)
Very strong25 pF25.0
Strong50 pF31.0

Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1 (continued)

Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1 (continued)

SymbolConditionValue(1)
#CCharacteristic
D SIN hold time
from SCK(8)
Pad drive(2)
SCK drive strength
Load (CL)
SIN hold time
MinMax
Very strong0 pF–1.0
8tHI
SOUT data valid time (after SCK edge)
tSUO
CCStrong
SOUT and SCK drive strength
0 pF–1.0
Medium

0 pF
9CCD SOUT data validVery strong25 pF7.0
time from SCK(9)
D SOUT data hold
Strong
SOUT and SCK drive strength
50 pF
SOUT data hold time (after SCK edge)
8.0
10CCVery strong25 pF–7.7
tHOtime after SCK(9)Strong
Medium
50 pF
50 pF
–11.0
–15.0

  1. Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.

3. N is the number of clock cycles added to time between PCS assertion and SCK assertion and is software programmable using DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, N is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).

4. tSYS is the period of DSPI_CLKn clock, the input clock to the DSPI module. Maximum frequency is 100 MHz (min tSYS = 10 ns).

5. M is the number of clock cycles added to time between SCK negation and PCS negation and is software programmable using DSPI_CTARx[PASC] and DSPI_CTARx[ASC]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, M is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).

  1. tSDC is only valid for even divide ratios. For odd divide ratios the fundamental duty cycle is not 50:50. For these odd divide ratios cases, the absolute spec number is applied as jitter/uncertainty to the nominal high time and low time.

7. PCSx and PCSS using same pad configuration.

8. Input timing assumes an input slew rate of 1 ns (10 % – 90 %) and uses TTL voltage thresholds.

9. SOUT Data valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value.

Figure 27. DSPI CMOS master mode — classic timing, CPHA = 0

Figure 29. DSPI PCS strobe (PCSS) timing (master mode)

4.17.2.1.2 DSPI CMOS master mode — modified timing

Note: In the following table, all output timing is worst case and includes the mismatching of rise and fall times of the output pads.

Table 47. DSPI CMOS master modified timing (full duplex and output only)
MTFE = 1, CPHA = 0 or 1

SymbolConditionValue(1)
#CCharacteristicPad drive(2)
SCK drive strength
Load (CL)Min
CCD SCK cycle timeVery strong25 pF33.0
1tSCKStrong50 pF80.0
Medium
SCK and PCS drive
strength
50 pF200.0
tCSCD PCS to SCK
delay
Very strong25 pF(N(3) × tSYS(4))
– 16
2CCStrong50 pF(N(3) × tSYS(4))
– 16
Medium50 pF(N(3) × tSYS(4))
– 16
tASCCC
3D After SCK delay
PCS
medium and
SCK strong
PCS = 0 pF
SCK = 50 pF
(M(5) × tSYS(4))
– 35
C
Characteristic
ConditionValue(1)
#SymbolPad drive(2)
SCK drive strength
Load (CL)Min
4D SCK duty cycle(6)Very strong0 pF1/2tSCK
– 2
tSDCCCStrong0 pF1/2tSCK
– 2
Medium0 pF
PCS strobe timing
1/2tSCK
– 5
5tPCSC
CC
D PCSx to PCSS
time(7)
PCS and PCSS drive
strength
Strong25 pF16.0
6tPASCCC
SIN setup timeSIN setup time to
SCK
CPHA = 0(8)
SCK drive strengthStrong
Very strong25 pF25 – (P(9) ×
tSYS(4))
Strong50 pF(9) ×
tSYS(4))
31 – (P
7tSUICCDMedium
SCK drive strength
50 pF52 – (P(9) ×
tSYS(4))
SCKSIN setup time toVery strong
Medium
SCK drive strength
50 pF
SIN hold time
52.0
SIN hold time
from SCK
Very strong0 pF
CPHA = 0(8)Strong0 pF(9) ×
tSYS(3))
–1 + (P
8tHICCDMedium
SCK drive strength
0 pF–1 + (P(9) ×
tSYS(3))
SIN hold time
from SCK
Very strong0 pF–1.0
CPHA = 1(8)Strong0 pF–1.0
Medium

Table 47. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued)

ConditionValue(1)
#SymbolCCharacteristicPad drive(2)
SOUT and SCK drive
strength
Load (CL)
SOUT data valid time (after SCK edge)
Min
SOUT data valid
time from SCK
Very strong25 pF
CPHA = 0, (10)Strong50 pF
Medium50 pF
9tSUOCCDSOUT and SCK drive
strength
SOUT data valid
time from SCK
CPHA = 1(10)
Very strong25 pF
Strong50 pF
SOUT and SCK drive
strength
SOUT data hold time (after SCK edge)Medium
D
CPHA = 0(10)Strong
Medium50 pF–15.0 + tSYS(4)
10tHOCCSOUT and SCK drive
strength
SOUT data hold
time after SCK
Very strong25 pF
CPHA = 1(10)Strong50 pF–11.0
Medium50 pF–15.0

Table 47. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued)

  1. All timing values for output signals in this table are measured to 50 % of the output voltage.

  2. Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.

  • 3. N is the number of clock cycles added to time between PCS assertion and SCK assertion and is software programmable using DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, N is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
  • 4. tSYS is the period of DSPI_CLKn clock, the input clock to the DSPI module. Maximum frequency is 100 MHz (min tSYS = 10 ns).
  • 5. M is the number of clock cycles added to time between SCK negation and PCS negation and is software programmable using DSPI_CTARx[PASC] and DSPI_CTARx[ASC]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, M is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
    1. tSDC is only valid for even divide ratios. For odd divide ratios the fundamental duty cycle is not 50:50. For these odd divide ratios cases, the absolute spec number is applied as jitter/uncertainty to the nominal high time and low time.
  • 7. PCSx and PCSS using same pad configuration.
  • 8. Input timing assumes an input slew rate of 1 ns (10 % – 90 %) and uses TTL voltage thresholds.
  • 9. P is the number of clock cycles added to delay the DSPI input sample point and is software programmable using DSPI_ MCR[SMPL_PT]. The value must be 0, 1 or 2. If the baud rate divide ratio is /2 or /3, this value is automatically set to 1.

10. SOUT Data valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value.

Figure 30. DSPI CMOS master mode — modified timing, CPHA = 0

Figure 31. DSPI CMOS master mode — modified timing, CPHA = 1

Figure 32. DSPI PCS strobe (PCSS) timing (master mode)

4.17.2.2 Slave mode timing

Table 48. DSPI CMOS slave timing — full duplex — normal and modified transfer formats (MTFE = 0/1)

SymbolCharacteristicCondition
#CPad Drive
1tSCKCCDSCK Cycle Time(1)
2tCSCSRDSS to SCK Delay(1)
3tASCSRDSCK to SS Delay(1)
4tSDCCCDSCK Duty Cycle(1)
Slave Access Time(1) (2) (3)
(SS active to SOUT driven)
Very
strong
5tACCDStrong
Medium
CCDSlave SOUT Disable Time(1)
(2) (3)
(SS inactive to SOUT High
Z or invalid)
Very
strong
6tDISStrong
Medium
9tSUICCDData Setup Time for
Inputs(1)
10tHICCDData Hold Time for Inputs(1)
11tSUOCC
D(after SCK edge)Strong
Medium
CC
12tHOD(after SCK edge)Strong

2. All timing values for output signals in this table, are measured to 50 % of the output voltage.

3. All output timing is worst case and includes the mismatching of rise and fall times of the output pads.

Figure 33. DSPI slave mode — modified transfer format timing (MFTE = 0/1) CPHA = 0

4.17.3 Ethernet timing

The Ethernet provides both MII and RMII interfaces. The MII and RMII signals can be configured for either CMOS or TTL signal levels compatible with devices operating at either 5.0 V or 3.3 V. Check the device pinout details to review the packages supporting MII and RMII.

4.17.3.1 MII receive signal timing (RXD[3:0], RX_DV, RX_ER, and RX_CLK)

The receiver functions correctly up to a RX_CLK maximum frequency of 25 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the RX_CLK frequency.

Note: In the following table, all timing specifications are referenced from RX_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V.

SymbolCCharacteristicValueUnit
MinMax
M1CCD RXD[3:0], RX_DV, RX_ER to RX_CLK setup5ns
M2CCD RX_CLK to RXD[3:0], RX_DV, RX_ER hold5ns
M3CCD RX_CLK pulse width high35 %65 %RX_CLK period
M4CCD RX_CLK pulse width low35 %65 %RX_CLK period
Table 49. MII receive signal timing

4.17.3.2 MII transmit signal timing (TXD[3:0], TX_EN, TX_ER, TX_CLK)

The transmitter functions correctly up to a TX_CLK maximum frequency of 25 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the TX_CLK frequency.

The transmit outputs (TXD[3:0], TX_EN, TX_ER) can be programmed to transition from either the rising or falling edge of TX_CLK, and the timing is the same in either case. This option allows the use of non-compliant MII PHYs.

Refer to the SPC584Bx 32-bit Power Architecture microcontroller reference manual's Ethernet chapter for details of this option and how to enable it.

Note: In the following table, all timing specifications are referenced from TX_CLK = 1.4 V to the valid output levels, 0.8 V and 2.0 V.

SymbolCCharacteristicValue(1)Unit
MinMax
M5CCD TX_CLK to TXD[3:0], TX_EN, TX_ER invalid5ns
M6CCD TX_CLK to TXD[3:0], TX_EN, TX_ER valid25ns
M7CCD TX_CLK pulse width high35 %65 %TX_CLK period
M8CCD TX_CLK pulse width low35 %65 %TX_CLK period

Table 50. MII transmit signal timing

  1. Output parameters are valid for CL = 25 pF, where CL is the external load to the device. The internal package capacitance is accounted for, and does not need to be subtracted from the 25 pF value

Figure 36. MII transmit signal timing diagram

4.17.3.3 MII async inputs signal timing (CRS and COL)

Table 51. MII async inputs signal timing

SymbolCValueUnit
CharacteristicMinMax
M9
CC
D CRS, COL minimum pulse width1.5TX_CLK period

Figure 37. MII async inputs timing diagram

4.17.3.4 MII and RMII serial management channel timing (MDIO and MDC)

The Ethernet functions correctly with a maximum MDC frequency of 2.5 MHz.

Figure 38. MII serial management channel timing diagram

4.17.3.5 MII and RMII serial management channel timing (MDIO and MDC)

The Ethernet functions correctly with a maximum MDC frequency of 2.5 MHz.

Note: In the following table, all timing specifications are referenced from MDC = 1.4 V (TTL levels) to the valid input and output levels, 0.8 V and 2.0 V (TTL levels). For 5 V operation, timing is referenced from MDC = 50 % to 2.2 V/3.5 V input and output levels.

SymbolCCharacteristicValueUnit
MinMax
M10CCD MDC falling edge to MDIO output invalid
(minimum propagation delay)
0ns
M11CCD MDC falling edge to MDIO output valid
(maximum propagation delay)
25ns
M12CCD MDIO (input) to MDC rising edge setup10ns
M13CCD MDIO (input) to MDC rising edge hold0ns
M14CCD MDC pulse width high40 %60 %MDC period
M15CCD MDC pulse width low40 %60 %MDC period
Table 52. MII serial management channel timing
------------------------------------------------

Note: In the following table, all timing specifications are referenced from MDC = 1.4 V (TTL levels) to the valid input and output levels, 0.8 V and 2.0 V (TTL levels). For 5 V operation, timing is referenced from MDC = 50 % to 2.2 V/3.5 V input and output levels.

SymbolCCharacteristicValueUnit
MinMax
M10CCD MDC falling edge to MDIO output invalid
(minimum propagation delay)
0ns
M11CCD MDC falling edge to MDIO output valid
(maximum propagation delay)
25ns
M12CCD MDIO (input) to MDC rising edge setup10ns
M13CCD MDIO (input) to MDC rising edge hold0ns
M14CCD MDC pulse width high40 %60 %MDC period
M15CCD MDC pulse width low40 %60 %MDC period

Table 53. RMII serial management channel timing

Figure 39. MII serial management channel timing diagram

4.17.3.6 RMII receive signal timing (RXD[1:0], CRS_DV)

The receiver functions correctly up to a REF_CLK maximum frequency of 50 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the RX_CLK frequency, which is half that of the REF_CLK frequency.

Note: In the following table, all timing specifications are referenced from REF_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V.

SymbolCCharacteristicValueUnit
MinMax
R1CCD RXD[1:0], CRS_DV to REF_CLK setup4ns
R2CCD REF_CLK to RXD[1:0], CRS_DV hold2ns
R3CCD REF_CLK pulse width high35 %65 %REF_CLK period
R4CCD REF_CLK pulse width low35 %65 %REF_CLK period

Figure 40. RMII receive signal timing diagram

4.17.3.7 RMII transmit signal timing (TXD[1:0], TX_EN)

The transmitter functions correctly up to a REF_CLK maximum frequency of 50 MHz + 1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the TX_CLK frequency, which is half that of the REF_CLK frequency.

The transmit outputs (TXD[1:0], TX_EN) can be programmed to transition from either the rising or falling edge of REF_CLK, and the timing is the same in either case. This option allows the use of non-compliant RMII PHYs.

Note: In the following table, all timing specifications are referenced from REF_CLK = 1.4 V to the valid output levels, 0.8 V and 2.0 V.

RMII transmit signal valid timing specified is considering the rise/fall time of the ref_clk on the pad as 1ns.

Value
SymbolCCharacteristicMinMax
R5CCD REF_CLK to TXD[1:0], TX_EN invalid2
R6CCD REF_CLK to TXD[1:0], TX_EN valid14
R7CCD REF_CLK pulse width high35 %65 %
R8CCD REF_CLK pulse width low35 %65 %

Figure 41. RMII transmit signal timing diagram

4.17.4 CAN timing

The following table describes the CAN timing.

SymbolParameterValue
CConditionMin
CCDCAN
controller
propagation
delay time
standard
pads
Medium type pads 25 pF load
CCDMedium type pads 50 pF load
tP(RX:TX)CCDSTRONG, VERY STRONG type pads
25 pF load
CCDSTRONG, VERY STRONG type pads
50 pF load
CCDCAN
controller
propagation
delay time
low power
pads
Medium type pads 25 pF load
CCDMedium type pads 50 pF load
tPLP(RX:TX)CCDSTRONG, VERY STRONG type pads
25 pF load
CCDSTRONG, VERY STRONG type pads
50 pF load

Table 56. CAN timing

4.17.5 UART timing

UART channel frequency support is shown in the following table.

LINFlexD clock
frequency LIN_CLK
(MHz)
Oversampling rateVoting schemeMax usable frequency
(Mbaud)
163:1 majority voting5
810
806Limited voting on one13.33
5sample with configurable16
4sampling point20
163:1 majority voting6.25
812.5
1006Limited voting on one16.67
5sample with configurable20
4sampling point25

Table 57. UART frequency support

4.17.6 I2C timing

The I2C AC timing specifications are provided in the following tables.

Note: In the following table, I2C input timing is valid for Automotive and TTL inputs levels, hysteresis enabled, and an input edge rate no slower than 1 ns (10 % – 90 %).

No.
Symbol
CParameterValueUnit
MinMax
1CCD Start condition hold time2PER_CLK
Cycle(1)
2CCD Clock low time8PER_CLK Cycle
3CCD Bus free time between Start and Stop condition4.7μs
4CCD Data hold time0.0ns
5CCD Clock high time4PER_CLK Cycle
6CCD Data setup time0.0ns
7CCD Start condition setup time (for repeated start condition only)2PER_CLK Cycle
8CCD Stop condition setup time2PER_CLK Cycle
Table 58. I2C input timing specifications – SCL and SDA
-------------------------------------------------------------
  1. PER_CLK is the SoC peripheral clock, which drives the I2C BIU and module clock inputs. See the Clocking chapter in the device reference manual for more detail.

Note: In the following table:

• All output timing is worst case and includes the mismatching of rise and fall times of the output pads.

• Output parameters are valid for CL = 25 pF, where CL is the external load to the device (lumped). The internal package capacitance is accounted for, and does not need to be subtracted from the 25 pF value.

• Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.

• Programming the IBFD register (I2C bus Frequency Divider) with the maximum frequency results in the minimum output timings listed. The I2C interface is designed to scale the data transition time, moving it to the middle of the SCL low period. The actual position is affected by the pre-scale and division values programmed in the IBC field of the IBFD register.

No.
Symbol
CValue
ParameterMin
1CCDStart condition hold time6
2CCDClock low time10
3CCDBus free time between Start and Stop condition4.7
4CCDData hold time7
5CCDClock high time10
6CCDData setup time2
7CCDStart condition setup time (for repeated start condition only)20
8CCDStop condition setup time10

Table 59. I2C output timing specifications — SCL and SDA

  1. PER_CLK is the SoC peripheral clock, which drives the I2C BIU and module clock inputs. See the Clocking chapter in the device reference manual for more detail.

Figure 42. I2C input/output timing

DS11701 Rev 4 101/142

Absolute Maximum Ratings

Table 4 describes the maximum ratings for the device. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Stress beyond the listed maxima, even momentarily, may affect device reliability or cause permanent damage to the device.

SymbolCParameterConditionsMinTypMaxUnit
VDD_LVSRDCore voltage
operating life
range(1)
–0.31.4
VDD_HV_IO_MAIN
VDD_HV_IO_ETH
VDD_HV_OSC
VDD_HV_FLA
SRDI/O supply
voltage(2)
–0.36.0
VSS_HV_ADVSRDADC ground<br

Table 4. Absolute maximum ratings
-----------------------------------

SymbolParameterValue
CConditionsMin
TSTGSRTMaximum non
operating
Storage
temperature
range
–55
TPASSRCMaximum
nonoperating
temperature
during passive
lifetime
–55
TSTORAGESRMaximum
storage time,
assembled part
programmed in
ECU
No supply; storage
temperature in
range –40 °C to
60 °C
TSDRSRTMaximum solder
temperature Pb
free packaged(8)
MSLSRTMoisture
sensitivity
level(9)
TXRAY doseSRTMaximum
cumulated
XRAY dose
Typical range for
X-rays source
during
inspection:80 ÷
130 KV; 20 ÷
50 A
Table 4. Absolute maximum ratings

2. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions.

    1. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal calculations.
    1. Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
    1. This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum limits to the transition time.
    1. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
    1. 175 °C are allowed for limited time. Mission profile with passive lifetime temperature >150 °C have to be evaluated by ST to confirm that are granted by product qualification.
    1. Solder profile per IPC/JEDEC J-STD-020D.
  1. Moisture sensitivity per JDEC test method A112.

Thermal Information

The following tables describe the thermal characteristics of the device. The parameters in this chapter have been evaluated by considering the device consumption configuration reported in the Section 4.7: Device consumption.

5.5.1 eTQFP64

SymbolCParameter(1)ConditionsValueUnit
RJACCDJunction-to-Ambient, Natural Convection(2)Four layer board (2s2p)30.8°C/W
RJMACCDJunction-to-Moving-Air, Ambient(2)at 200 ft./min., four layer
board (2s2p)
24.4°C/W
RJBCCDJunction-to-board(3)12.1°C/W
RJCtopCCDJunction-to-case top(4)15.2°C/W
RJCbottomCCDJunction-to-case bottom(5)4.5°C/W
JTCCDJunction-to-package top(6)Natural convection3.7°C/W

Table 69. Thermal characteristics for 64 exposed pad eTQFP package

  1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.

2. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.

  1. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package.
    1. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).
    1. Thermal resistance between the die and the exposed pad ground on the bottom of the package based on simulation without any interface resistance.
    1. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
SPC584BxNot explicitly stated in provided text, but 'SPC' prefix is commonly STMicroelectronics
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