HGC0402R5105K500NTEJ
SPC584Bx
Overview
Part: SPC584Bx Type: 32-bit Power Architecture Microcontroller
Key Specs:
- CPU: e200z420, 32-bit Power Architecture
- Core Frequency: 120 MHz
- On-chip Flash Memory: 2112 KB (2048 KB code + 64 KB data)
- HSM Dedicated Flash Memory: 176 KB (1
Features
- AEC-Q100 qualified
- High performance e200z420
- 32-bit Power Architecture technology CPU
- Core frequency as high as 120 MHz
- Variable Length Encoding (VLE)
- 2112 KB (2048 KB code flash + 64 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation
- 176 KB HSM dedicated flash memory (144 KB code + 32 KB data)
- 128 KB on-chip general-purpose SRAM (in addition to 64 KB core local data RAM
- Crossbar switch architecture for concurrent access to peripherals, Flash, or RAM from multiple bus masters with end-to-end ECC
- Multi-channel direct memory access controller (eDMA) with 64 channels
- 1 interrupt controller (INTC)
- Comprehensive new generation ASIL-B safety concept
- ASIL-B of ISO 26262
- FCCU for collection and reaction to failure notifications
- Memory Error Management Unit (MEMU) for collection and reporting of error events in memories
- Cyclic redundancy check (CRC) unit
- Enhanced low power support
- Ultra low power STANDBY
- Smart Wake-up Unit
- Fast wake-up and execute from RAM
- Enhanced modular IO subsystem (eMIOS): up to 64 timed I/O channels with 16-bit counter resolution
- Body cross triggering unit (BCTU)
- Triggers ADC conversions from any eMIOS channel
- Triggers ADC conversions from up to 2 dedicated PIT_RTIs
- Enhanced analog-to-digital converter system with:
- 2 independent fast 12-bit SAR analog converters
- 1 supervisor 12-bit SAR analog converter
- 1 10-bit SAR analog converter with STDBY mode support
- Communication interfaces
- 1 Ethernet controller 10/100 Mbps, compliant IEEE 802.3-2008
- 8 MCAN interfaces with advanced shared memory scheme and ISO CAN-FD support
- 14 LINFlexD modules
- 7 Deserial Serial Peripheral Interface (DSPI) modules
- Dual phase-locked loops with stable clock domain for peripherals and FM modulation domain for computational shell
- Nexus Development Interface (NDI) per IEEE-ISTO 5001-2003 standard, with some support for 2010 standard
This is information on a product in full production.
-
Boot Assist Flash (BAF) supports factory programming using a serial bootload through the asynchronous CAN or LIN/UART
-
Junction temperature range -40 °C to 150 °C
-
eTQFP64
-
eTQFP100
-
eTQFP144
-
eTQFP176
Table 1. Device summary
Applications
Features
- AEC-Q100 qualified
- High performance e200z420
- 32-bit Power Architecture technology CPU
- Core frequency as high as 120 MHz
- Variable Length Encoding (VLE)
- 2112 KB (2048 KB code flash + 64 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation
- 176 KB HSM dedicated flash memory (144 KB code + 32 KB data)
- 128 KB on-chip general-purpose SRAM (in addition to 64 KB core local data RAM
- Crossbar switch architecture for concurrent access to peripherals, Flash, or RAM from multiple bus masters with end-to-end ECC
- Multi-channel direct memory access controller (eDMA) with 64 channels
- 1 interrupt controller (INTC)
- Comprehensive new generation ASIL-B safety concept
- ASIL-B of ISO 26262
- FCCU for collection and reaction to failure notifications
- Memory Error Management Unit (MEMU) for collection and reporting of error events in memories
- Cyclic redundancy check (CRC) unit
- Enhanced low power support
- Ultra low power STANDBY
- Smart Wake-up Unit
- Fast wake-up and execute from RAM
- Enhanced modular IO subsystem (eMIOS): up to 64 timed I/O channels with 16-bit counter resolution
- Body cross triggering unit (BCTU)
- Triggers ADC conversions from any eMIOS channel
- Triggers ADC conversions from up to 2 dedicated PIT_RTIs
- Enhanced analog-to-digital converter system with:
- 2 independent fast 12-bit SAR analog converters
- 1 supervisor 12-bit SAR analog converter
- 1 10-bit SAR analog converter with STDBY mode support
- Communication interfaces
- 1 Ethernet controller 10/100 Mbps, compliant IEEE 802.3-2008
- 8 MCAN interfaces with advanced shared memory scheme and ISO CAN-FD support
- 14 LINFlexD modules
- 7 Deserial Serial Peripheral Interface (DSPI) modules
- Dual phase-locked loops with stable clock domain for peripherals and FM modulation domain for computational shell
- Nexus Development Interface (NDI) per IEEE-ISTO 5001-2003 standard, with some support for 2010 standard
This is information on a product in full production.
-
Boot Assist Flash (BAF) supports factory programming using a serial bootload through the asynchronous CAN or LIN/UART
-
Junction temperature range -40 °C to 150 °C
-
eTQFP64
-
eTQFP100
-
eTQFP144
-
eTQFP176
Table 1. Device summary
Electrical Characteristics
4.1 Introduction
The present document contains the target Electrical Specification for the 40 nm family 32-bit MCU SPC584Bx products.
In the tables where the device logic provides signals with their respective timing characteristics, the symbol "CC" (Controller Characteristics) is included in the "Symbol" column.
In the tables where the external system must provide signals with their respective timing characteristics to the device, the symbol "SR" (System Requirement) is included in the "Symbol" column.
The electrical parameters shown in this document are guaranteed by various methods. To give the customer a better understanding, the classifications listed in Table 3 are used and the parameters are tagged accordingly in the tables where appropriate.
| Classification tag | Tag description |
|---|---|
| P | Those parameters are guaranteed during production testing on each individual device. |
| C | Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. |
| T | Those parameters are achieved by design validation on a small sample size from typical devices. |
| D | Those parameters are derived mainly from simulations. |
| Classification tag | Tag description |
|---|---|
4.2 Absolute maximum ratings
Table 4 describes the maximum ratings for the device. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Stress beyond the listed maxima, even momentarily, may affect device reliability or cause permanent damage to the device.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| VDD_LV | SR | D | Core voltage operating life range(1) | — | –0.3 | — | 1.4 |
| VDD_HV_IO_MAIN VDD_HV_IO_ETH VDD_HV_OSC VDD_HV_FLA | SR | D | I/O supply voltage(2) | — | –0.3 | — | 6.0 |
| VSS_HV_ADV | SR | D | ADC ground<br |
| Table 4. Absolute maximum ratings |
|---|
| ----------------------------------- |
| Symbol | Parameter | Value | |||
|---|---|---|---|---|---|
| C | Conditions | Min | |||
| TSTG | SR | T | Maximum non operating Storage temperature range | — | –55 |
| TPAS | SR | C | Maximum nonoperating temperature during passive lifetime | — | –55 |
| TSTORAGE | SR | — | Maximum storage time, assembled part programmed in ECU | No supply; storage temperature in range –40 °C to 60 °C | — |
| TSDR | SR | T | Maximum solder temperature Pb free packaged(8) | — | — |
| MSL | SR | T | Moisture sensitivity level(9) | — | — |
| TXRAY dose | SR | T | Maximum cumulated XRAY dose | Typical range for X-rays source during inspection:80 ÷ 130 KV; 20 ÷ 50 A | — |
| Table 4. Absolute maximum ratings |
|---|
2. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions.
-
- The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal calculations.
-
- Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
-
- This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum limits to the transition time.
-
- The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
-
- 175 °C are allowed for limited time. Mission profile with passive lifetime temperature >150 °C have to be evaluated by ST to confirm that are granted by product qualification.
-
- Solder profile per IPC/JEDEC J-STD-020D.
- Moisture sensitivity per JDEC test method A112.
4.3 Operating conditions
Table 5 describes the operating conditions for the device, and for which all the specifications in the data sheet are valid, except where explicitly noted. The device operating conditions must not be exceeded or the functionality of the device is not guaranteed.
| Symbol | C | P | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|---|
| FSYS | SR | P | Operating system clock frequency(2) | — | — | — | 120 | MHz |
| TA_125 Grade(3) | SR | D | Operating Ambient temperature | — | –40 | — | 125 | °C |
| TJ_125 Grade(3) | SR | P | Junction temperature under bias | TA<br |
| Table 5. Operating conditions | |||
|---|---|---|---|
| -- | -- | -- | ------------------------------- |
| Unit | ||||||
|---|---|---|---|---|---|---|
| Symbol | C | Parameter | Conditions | Min | Typ | |
| VSS_HV_ADR_S VSS_HV_ADV | SR | D | VSS_HV_ADR_S differential voltage | — | –25 | — |
| VRAMP_HV | SR | D | Slew rate on HV power supply | — | — | — |
| VIN | SR | P | I/O input voltage range | — | 0 | — |
| IINJ1 | SR | T | Injection current (per pin) without performance degradation(7) (8) (9) | Digital pins and analog pins | –3.0 | — |
| IINJ2 | SR | D | Dynamic Injection current (per pin) with performance degradation(9) (10) | Digital pins and analog pins | –10 | — |
Table 5. Operating conditions (continued)
-
The ranges in this table are design targets and actual data may vary in the given range.
-
Maximum operating frequency is applicable to the cores and platform of the device. See the Clock Chapter in the Microcontroller Reference Manual for more information on the clock limitations for the various IP blocks on the device.
- 3. In order to evaluate the actual difference between ambient and junction temperatures in the application, refer to Section 5.5: Package thermal characteristics.
-
- Core voltage as measured on device pin to guarantee published silicon performance.
-
- Core voltage can exceed 1.26 V with the limitations provided in Section 4.2: Absolute maximum ratings, provided that HVD134_C monitor reset is disabled.
-
- 1.260 V 1.290 V range allowed periodically for supply with sinusoidal shape and average supply value below or equal to 1.236 V at the given temperature profile.
-
- Full device lifetime. I/O and analog input specifications are only valid if the injection current on adjacent pins is within these limits. See Section 4.2: Absolute maximum ratings for maximum input current for reliability requirements.
-
- The I/O pins on the device are clamped to the I/O supply rails for ESD protection. When the voltage of the input pins is above the supply rail, current will be injected through the clamp diode to the supply rails. For external RC network calculation, assume typical 0.3 V drop across the active diode. The diode voltage drop varies with temperature.
- 9. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
-
- Positive and negative Dynamic current injection pulses are allowed up to this limit. I/O and ADC specifications are not granted. See the dedicated chapters for the different specification limits. See the Absolute Maximum Ratings table for maximum input current for reliability requirements. Refer to the following pulses definitions: Pulse1 (ISO 7637-2:2011), Pulse 2a(ISO 7637-2:2011 5.6.2), Pulse 3a (ISO 7637-2:2011 5.6.3), Pulse 3b (ISO 7637-2:2011 5.6.3).
4.3.1 Power domains and power up/down sequencing
The following table shows the constraints and relationships for the different power domains. Supply1 (on rows) can exceed Supply2 (on columns), only if the cell at the given row and column is reporting 'ok'. This limitation is valid during power-up and power-down phases, as well as during normal device operation.
| Supply2 | ||
|---|---|---|
| VDD_LV | ||
| Supply1 | VDD_HV_IO_ETH | ok |
| VDD_HV_IO_MAIN VDD_HV_FLA VDD_HV_OSC | ok | |
| VDD_HV_ADV | ok | |
| VDD_HV_ADR | ok |
Table 6. Device supply relation during power-up/power-down sequence
During power-up, all functional terminals are maintained in a known state as described in the device pinout Microsoft Excel file attached to the IO_Definition document.
4.4 Electrostatic discharge (ESD)
The following table describes the ESD ratings of the device:
-
All ESD testing are in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
-
Device failure is defined as: "If after exposure to ESD pulses, the device does not meet the device specification requirements, which include the complete DC parametric and functional testing at room temperature and hot temperature, maximum DC parametric variation within 10 % of maximum specification".
-
Parameter
-
ESD for Human Body Model (HBM)(1)
-
ESD for field induced Charged Device Model (CDM)(2)
-
This parameter tested in conformity with ANSI/ESD STM5.1-2007 Electrostatic Discharge Sensitivity Testing.
-
This parameter tested in conformity with ANSI/ESD STM5.3-1990 Charged Device Model - Component Level.
4.5 Electromagnetic compatibility characteristics
EMC measurements at IC-level IEC standards are available from STMicroelectronics on request.
4.6 Temperature profile
The device is qualified in accordance to AEC-Q100 Grade1 requirements, such as HTOL 1,000 h and HTDR 1,000 hrs, TJ = 150 °C.
4.7 Device consumption
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Value$^{(1)}$ | |||||||
| Min | Typ | Max | Unit | ||||
| IDD_LKG$^{(2),(3)}$ | CC | Leakage current on the V$_{DD_LV}$ supply | T$_{J}$ = 40 °C | — | — | 7 | mA |
| T$_{J}$ = 25 °C | — | 1.5 | 5 | mA | |||
| T$_{J}$ = 55 °C | — | — | 10 | mA |
Table 8. Device consumption
| Symbol | C | Parameter | Conditions | Value(1) | Unit | |---|---|---|---|:---:|:---:|:---:|---| | | | | | Min | Typ | Max | | | IDD_LKG$^{(2),(3)}$ | CC | C | Leakage current on the V${DD_LV}$ supply | T${J}$ = 40 °C | — | — | 7 | mA | | | | D | | T${J}$ = 25 °C | — | 1.5 | 5 | mA | | | | D | | T${J}$ = 55 °C | — | — | 10 | mA | | | |
| Table 8. Device consumption (continued) | ||
|---|---|---|
| -- | -- | ----------------------------------------- |
1. The ranges in this table are design targets and actual data may vary in the given range.
-
- The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered, and they are computed in the dynamic IDD_LV and IDD_HV parameters.
- 3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the consumption contributors. The tests used in validation, characterization and production are verifying that the total consumption (leakage+dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG + IDD_LV). The two parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions and the software profile used.
- 4. Use case: 1 x e200Z4 @120 MHz, HSM @60 MHz, all IPs clock enabled, Flash access with prefetch disabled, Flash consumption includes parallel read and program/erase, all SARADC in continuous conversion, DMA continuously triggered by ADC conversion, 2 DSPI / 8 CAN / 2 LINFlex transmitting, RTC and STM running, 1 x EMIOS running (4 channels in OPWMT mode), FIRC, SIRC, FXOSC, PLL0-1 running. The switching activity estimated for dynamic consumption does not include I/O toggling, which is highly dependent on the application. Details of the software configuration are available separately. The total device consumption is IDD_LV + IDD_HV + IDD_LKG for the selected temperature.
- 5. Gateway use case: One core running at 120 MHz, HSM 40 MHz, DMA, PLL, FLASH read only 25%, 8xCAN, 1xSARADC.
- 6. BCM use case: One Core running at 80 MHz, HSM 40 MHz, DMA, PLL, FLASH read only 25%, 1xCAN, 3xSARADC.
-
- Dynamic consumption of the HSM module, including the dedicated memories, during the execution of Electronic Code Book crypto algorithm on 1 block of 16 byte of shared RAM.
-
- Flash in Low Power. Sysclk at 120 MHz, HSM 60 MHz, PLL0_PHI at 400 MHz, XTAL at 40 MHz, FIRC 16 MHz ON, RCOSC1M off. FlexCAN: instances: 0, 1, 2, 3, 4, 5, 6, 7 ON (configured but no reception or transmission), Ethernet ON (configured but no reception or transmission), ADC ON (continuously converting). All others IPs clock-gated.
-
- Sysclk = RC16 MHz, RC16 MHz ON, RC1 MHz ON, PLL OFF. All possible peripherals off and clock gated. Flash in power down mode.
- 10. STANDBY mode: device configured for minimum consumption, RC16 MHz off, RC1 MHz on.
-
- SSWU1 mode adder: FIRC = ON, SSWU clocked at 8 MHz and running over all STANDBY period, ADC off. The total standby consumption can be obtained by adding this parameter to the IDDSTBY parameter for the selected memory size and temperature.
-
- SSWU2 mode adder: FIRC = ON, SSWU clocked at 8 MHz and running over all STANDBY period, ADC on in continuous conversion. The total standby consumption can be obtained by adding this parameter to the IDDSTBY parameter for the selected memory size and temperature.
4.8 I/O pad specification
The following table describes the different pad type configurations.
| Pad type | Description |
|---|---|
| Weak configuration | Provides a good compromise between transition time and low electromagnetic emission. |
| Medium configuration | Provides transition fast enough for the serial communication channels with controlled current to reduce electromagnetic emission. |
| Strong configuration | Provides fast transition speed; used for fast interface. |
| Very strong configuration | Provides maximum speed and controlled symmetric behavior for rise and fall transition. Used for fast interface including Ethernet interface requiring fine control of rising/falling edge jitter. |
| Differential configuration | A few pads provide differential capability providing very fast interface together with good EMC performances. |
| Input only pads | These low input leakage pads are associated with the ADC channels. |
| Standby pads | These pads (LP pads) are active during STANDBY. They are configured in CMOS level logic and this configuration cannot be changed. Moreover, when the device enters the STANDBY mode, the pad-keeper feature is activated for LP pads. It means that: – if the pad voltage level is above the pad keeper high threshold, a weak pull-up resistor is automatically enabled – if the pad voltage level is below the pad keeper low threshold, a weak pull-down resistor is automatically enabled. For the pad-keeper high/low thresholds, consider(VDD_HV_IO_MAIN / 2) +/-20 %. |
| Table 9. I/O pad specification descriptions | ||||
|---|---|---|---|---|
| -- | -- | -- | -- | --------------------------------------------- |
Note: Each I/O pin on the device supports specific drive configurations. See the signal description table in the device reference manual for the available drive configurations for each I/O pin. PMC_DIG_VSIO register has to be configured to select the voltage level (3.3 V or 5.0 V) for each IO segment.
Logic level is configurable in running mode while it is CMOS not-configurable in STANDBY for LP (low power) pads, so if a LP pad is used to wakeup from STANDBY, it should be configured as CMOS also in running mode in order to prevent device wrong behavior in STANDBY.
4.8.1 I/O input DC characteristics
The following table provides input DC electrical characteristics, as described in Figure 3.
| Figure 3. I/O input electrical characteristics |
|---|
- TTL
- Vihttl
- Vilttl
- Vhysttl
- CMOS
- Vihcmos
- Vilcmos
- Vhyscmos
- COMMON
- ILKG
- ILKG
- ILKG
| Symbol | Parameter Conditions | ||
|---|---|---|---|
| C | |||
| CP1 | CC | D | Pad capacitance |
| Vdrift | CC | D | Input Vil/Vih temperature drift |
| WFI | SR | C | Wakeup input filtered pulse(1) |
| WNFI | SR | C | Wakeup input not filtered pulse(1) |
Table 10. I/O input electrical characteristics (continued)
1. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| IWPU | CC | T | Weak pull-up current absolute value | VIN = 1.1 V(1) | — | — | 130 |
| CC | P | VIN = 0.69 * VDD_HV_IO(2) | 15 | — | — | ||
| RWPU | CC | D | Weak Pull-up resistance | VDD_HV_IO = 5.0 V ± 10% | 33 | — | 93 |
| RW |
Table 11. I/O pull-up/pull-down electrical characteristics
1. Maximum current when forcing a change in the pin level opposite to the pull configuration.
2. Minimum current when keeping the same pin level state than the pull configuration.
Note: When the device enters into standby mode, the LP pads have the input buffer switched-on. As a consequence, if the pad input voltage VIN is VSS<VIN<VDD_HV, an additional consumption can be measured in the VDD_HV domain. The highest consumption can be seen around mid-range (VIN ~=VDD_HV/2), 2-3 mA depending on process, voltage and temperature.
This situation may occur if the PAD is used as a ADC input channel, and VSS<VIN<VDD_HV. The applications should ensure that LP pads are always set to VDD_HV or VSS, to avoid the extra consumption. Refer to the device pinout IO definition excel file to identify the lowpower pads which also have an ADC function.
4.8.2 I/O output DC characteristics
Figure 4 provides description of output DC electrical characteristics.
Figure 4. I/O output DC electrical characteristics definition
The following tables provide DC characteristics for bidirectional pads:
- Table 12 provides output driver characteristics for I/O pads when in WEAK/SLOW configuration.
- Table 13 provides output driver characteristics for I/O pads when in MEDIUM configuration.
- Table 14 provides output driver characteristics for I/O pads when in STRONG/FAST configuration.
- Table 15 provides output driver characteristics for I/O pads when in VERY STRONG/VERY FAST configuration.
Note: 10 %/90 % is the default condition for any parameter if not explicitly mentioned differently.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|---|
| Vol_W | CC | D | Output low voltage for Weak type PADs | Iol = 0.5 mA VDD = 5.0 V ± 10 % VDD = 3.3 V ± 10 % | — | — | 0.1*VDD | V |
| Voh_W | CC | D | Output high voltage for Weak type PADs | Ioh = 0.5 mA VDD | ||||
| Table 12. WEAK/SLOW I/O output characteristics |
|---|---|---|---|---|---|---|---|
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
| Vol_W | CC | D | Output low voltage for Weak type PADs | Iol = 0.5 mA
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 0.1*VDD | V |
| Voh_W | CC | D | Output high voltage for Weak type PADs | Ioh = 0.5 mA
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 0.9*VDD | — | — | V |
| R_W | CC | P | Output impedance for Weak type PADs | VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 380
250 | — | 1040
700 | Ω |
| Fmax_W | CC | T | Maximum output frequency for Weak type PADs | CL = 25 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 2 | MHz |
| | | | CL = 50 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 1 | MHz |
| tTR_W | CC | T | Transition time output pin weak configuration, 10%-90% | CL = 25 pF
VDD = 5.0 V + 10 %
VDD = 3.3 V + 10 % | 25 | — | 120 | ns |
| | | | CL = 50 pF
VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | 50 | — | 240 | ns |
| tSKEW_W | CC | T | Difference between rise and fall time, 90%-10% | — | — | 25 | % |
| IDCMAX_W | CC | D | Maximum DC current | VDD = 5.0 V ± 10 %
VDD = 3.3 V ± 10 % | — | — | 0.5 | mA |
Table 13. MEDIUM I/O output characteristics
| Symbol | C | Parameter | Conditions | Value | |
|---|---|---|---|---|---|
| Min | |||||
| Vol_M | CC | D | Output low voltage for Medium type PADs | Iol = 2.0 mA VDD =5.0 V ± 10 % VDD =3.3 V ± 10 % | — |
| Voh_M | CC | D | Output high voltage for Medium type PADs | Ioh=2.0 mA VDD = 5.0 V ± 10 % VDD = 3.3 V ± 10 % | 0.9*VDD |
| Symbol | C | Parameter | Conditions | Value | |
|---|---|---|---|---|---|
| Min | |||||
| Output impedance for Medium type PADs | VDD = 5.0 V ± 10 % | 90 | |||
| R_M | CC | P | VDD = 3.3 V ± 10 % | 60 | |
| Fmax_M | CC | Maximum output frequency for Medium type PADs | CL = 25 pF VDD = 5.0 V ± 10 % VDD = 3.3 V ± 10 % | — | |
| T | CL = 50 pF VDD = 5.0 V ± 10 % VDD = 3.3 V ± 10 % | — | |||
| tTR_M | CC | ||||
| tSKEW_M | CC | T | Difference between rise and fall time, 90%-10% | — | — |
| IDCMAX_M | CC | D | Maximum DC current | VDD = 5.0 V ± 10 % VDD = 3.3 V ± 10 % | — |
| Table 13. MEDIUM I/O output characteristics (continued) | |||||
| --------------------------------------------------------- | -- | ||||
| --------------------------------------------------------- | -- |
Table 14. STRONG/FAST I/O output characteristics
| Symbol | C | Parameter | Conditions | Value | Unit | ||||
|---|---|---|---|---|---|---|---|---|---|
| Min | Typ | Max | |||||||
| Vol_S | CC | D | Output low voltage for Strong type PADs | Iol = 8.0 mA VDD = 5.0 V ± 10 % | — | — | 0.1*VDD | V | |
| Iol = 5.5 mA VDD = 3.3 V ± 10 % | — | — | 0.15*VDD | V | |||||
| Voh_S | CC | D | Output high voltage for Strong type PADs | Ioh = 8.0 mA VDD = 5.0 V ± 10 % | 0.9*VDD | — | — | V | |
| Ioh = 5.5 mA VDD = 3.3 V ± 10 % | 0.85*VDD | — | — | V | |||||
| R_S | CC | P | Output impedance for Strong type PADs | VDD = 5.0 V ± 10 % | 20 | — | 65 | ||
| VDD = 3.3 V ± 10 % | 28 | — | 90 | Ω |
| Symbol | C | Parameter | Conditions | Value | |
|---|---|---|---|---|---|
| Min | |||||
| Fmax_S | CC | Maximum output frequency for Strong type PADs | CL = 25 pF VDD=5.0 V ± 10 % | — | |
| T | CL = 50 pF VDD=5.0 V ± 10 % | — | |||
| CL = 25 pF VDD = 3.3 V ± 10 % | — | ||||
| CL = 50 pF VDD = 3.3 V ± 10 % | — | ||||
| tTR_S | CC | T | Transition time output pin STRONG configuration, 10%-90% | CL = 25 pF VDD = 5.0 V ± 10 % | 3 |
| CL = 50 pF VDD = 5.0 V ± 10 % | 5 | ||||
| CL = 25 pF VDD = 3.3 V ± 10 % | 1.5 | ||||
| CL = 50 pF VDD = 3.3 V ± 10 % | 2.5 | ||||
| IDCMAX_S | CC | D | Maximum DC current | VDD = 5 V ± 10 % | — |
| VDD = 3.3 V ± 10 % | — | ||||
| tSKEW_S | CC | T | Difference between rise and fall time, 90 %-10 % | — | — |
Table 15. VERY STRONG/VERY FAST I/O output characteristics
| Symbol | C | Parameter | Conditions | Value | |
|---|---|---|---|---|---|
| Min | |||||
| Vol_V CC | Output low voltage for Very Strong type PADs | Iol = 9.0 mA VDD =5.0 V ± 10 % | — | ||
| D | Iol = 9.0 mA VDD =3.3 V ± 10 % | — | |||
| Voh_V | CC D | Output high voltage for Very | Ioh = 9.0 mA VDD = 5.0 V ± 10 % | 0.9*VDD | |
| Strong type PADs | |||||
| R_V | CC | P | Output impedance for Very Strong type PADs | VDD = 5.0 V ± 10 % | 20 |
| VDD = 3.3 V ± 10 % | 18 |
| Value | |||||
|---|---|---|---|---|---|
| Symbol | C | Parameter | Conditions | Min | |
| Fmax_V CC | Maximum output frequency for Very Strong type PADs | CL = 25 pF VDD = 5.0 V ± 10 % | — | ||
| T | CL = 50 pF VDD = 5.0 V ± 10 % | — | |||
| CL = 25 pF VDD = 3.3 V ± 10 % | — | ||||
| CL = 50 pF VDD = 3.3 V ± 10 % | — | ||||
| 10–90% threshold transition time output pin VERY STRONG configuration | CL = 25 pF VDD = 5.0 V ± 10 % | 1 | |||
| CC | T | CL = 50 pF VDD = 5.0 V ± 10 % | 3 | ||
| tTR_V | CL = 25 pF VDD = 3.3 V ± 10 % | 1.5 | |||
| CL = 50 pF VDD = 3.3 V ± 10 % | 3 | ||||
| T | 20–80% threshold transition time | CL = 25 pF VDD = 5.0 V ± 10 % | 0.8 | ||
| tTR20-80_V | CC | output pin VERY STRONG configuration | |||
| tTRTTL_V | CC | T | TTL threshold transition time for output pin in VERY STRONG configuration (Ethernet standard) | CL = 25 pF VDD = 3.3 V ± 10 % | 0.88 |
| tTR20-80_V | T | Sum of transition time 20–80% output pin VERY STRONG configuration | CL = 25 pF VDD = 5.0 V ± 10 % | — | |
| CC | CL = 15 pF VDD = 3.3 V ± 10 % | — | |||
| tSKEW_V | CC | T | Difference between rise and fall delay | CL = 25 pF VDD = 5.0 V ± 10 % | 0 |
| IDCMAX_V | CC | D | Maximum DC current | VDD = 5.0 V±10 % VDD = 3.3 V ± 10 % | — |
Table 15. VERY STRONG/VERY FAST I/O output characteristics (continued)
4.8.3 I/O pad current specifications
The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a VDD/VSS supply pair as described in the device pinout Microsoft Excel file attached to the IO_Definition document.
Table 16 provides I/O consumption figures.
In order to ensure device reliability, the average current of the I/O on a single segment should remain below the IRMSSEG maximum value.
In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single segment should remain below the IDYNSEG maximum value.
Pad mapping on each segment can be optimized using the pad usage information provided on the I/O Signal Description table.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Average consumption(2) | |||||||
| IRMSSEG | SR | D | Sum of all the DC I/O current within a supply segment | — | — | 80 | mA |
| IRMS_W | CC | D | RMS I/O current for WEAK configuration | CL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 % | — | — | 1.1 |
| CL = 50 pF, 1 MHz, VDD = 5 |
Table 16. I/O consumption
| Symbol | C | D | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|---|
| Average consumption(2) | ||||||||
| IRMSSEG | SR | D | Sum of all the DC I/O current within a supply segment | — | — | — | 80 | mA |
| IRMS_W | CC | D | RMS I/O current for WEAK configuration | CL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 % | — | — | 1.1 | mA |
| CL = 50 pF, 1 |
Table 16. I/O consumption (continued)
Electrical characteristics SPC584Bx
| Symbol | C | D | Parameter | Conditions | Value(1) | Unit | ||
|---|---|---|---|---|---|---|---|---|
| Min | Typ | Max | ||||||
| Average consumption(2) | ||||||||
| IRMSSEG | SR | D | Sum of all the DC I/O current within a supply segment | — | — | — | 80 | mA |
| IRMS_W | CC | D | RMS I/O current for WEAK configuration | CL = 25 pF, 2 MHz, VDD = 5.0 V ± 10 % | — | — | 1.1 | mA |
Table 16. I/O consumption (continued)
-
I/O current consumption specifications for the 4.5 V VDD_HV_IO 5.5 V range are valid for VSIO_[VSIO_xx] = 1, and VSIO[VSIO_xx] = 0 for 3.0 V VDD_HV_IO 3.6 V.
-
Average consumption in one pad toggling cycle.
-
Stated maximum values represent peak consumption that lasts only a few ns during I/O transition. When possible (timed output) it is recommended to delay transition between pads by few cycles to reduce noise and consumption.
4.9 Reset pad (PORST) electrical characteristics
The device implements dedicated bidirectional reset pins as below specified. PORST pin does not require active control. It is possible to implement an external pull-up to ensure correct reset exit sequence. Recommended value is 4.7 K.
Figure 5. Startup reset requirements
Figure 6 describes device behavior depending on supply signal on PORST:
-
- PORST low pulse has too low amplitude: it is filtered by input buffer hysteresis. Device remains in current state.
-
- PORST low pulse has too short duration: it is filtered by low pass filter. Device remains in current state.
-
- PORST low pulse is generating a reset:
- a) PORST low but initially filtered during at least WFRST. Device remains initially in current state.
- b) PORST potentially filtered until WNFRST. Device state is unknown. It may either be reset or remains in current state depending on extra condition (temperature, voltage, device).
- c) PORST asserted for longer than WNFRST. Device is under reset.
Figure 6. Noise filtering on reset signal
Table 17. Reset PAD electrical characteristics
| Symbol | C | Parameter | Conditions | Value | |
|---|---|---|---|---|---|
| Min | |||||
| VIHRES | SR | P | Input high level TTL | VDD_HV = 5.0 V ± 10 % VDD_HV = 3.3 V ± 10 % | 2 |
| VILRES | SR | P | Input low level | VDD_HV = 5.0 V ± 10 % | -0.3 |
| TTL | VDD_HV = 3.3 V ± 10 % | -0.3 | |||
| VHYSRES | CC | C | Input hysteresis | VDD_HV = 5.0 V ± 10 % | 0.3 |
| TTL | VDD_HV = 3.3 V ± 10 % | 0.2 | |||
| VDD_POR | CC | D | Minimum supply | VDD_HV = 5.0 V ± 10 % | — |
| for strong pull down activation | VDD_HV = 3.3 V ± 10 % | — |
| Symbol | C | P | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|---|
| VIHRES | SR | P | Input high level TTL | VDD_HV = 5.0 V ± 10 % VDD_HV = 3.3 V ± 10 % | 2 | — | VDD_HV_IO +0.3 | V |
| VILRES | SR | P | Input low level TTL | VDD_HV = 5.0 V ± 10 % VDD_HV = 3.3 V ± 10 % | -0.3 | — | 0.8 0.6 | V |
| VHYSHRES | CC | C | Input hysteresis TTL | VDD_HV = 5.0 V ± 10 % VDD_HV = 3.3 V ± 10 % | 0.3 0.2 | — | — | V |
| VDD_POR | CC | D | Minimum supply for strong pull-down activation | VDD_HV = 5.0 V ± 10 % VDD_HV = 3.3 V ± 10 % | — | — | 1.6 1.05 | V |
- Iol_r applies to PORST: Strong Pull-down is active on PHASE0 for PORST. Refer to the device pinout IO definition excel file for details regarding pin usage.
2. Maximum current when forcing a change in the pin level opposite to the pull configuration.
- Minimum current when keeping the same pin level state than the pull configuration.
Table 18. Reset PAD state during power-up and reset
| PAD | POWER-UP State | RESET state | DEFAULT state(1) | STANDBY state |
|---|---|---|---|---|
| PORST | Strong pull-down | Weak pull-down | Weak pull-down | Weak pull-up |
- Before SW Configuration. Refer to the Device Reference Manual, Reset Generation Module (MC_RGM) Functional Description chapter for the details of the power-up phases.
4.10 PLLs
Two phase-locked loop (PLL) modules are implemented to generate system and auxiliary clocks on the device.
Figure 7 depicts the integration of the two PLLs. Refer to device Reference Manual for more detailed schematic.
4.10.1 PLL0
Table 19. PLL0 electrical characteristics
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| fPLL0IN | SR | — | PLL0 input clock(1) | 8 | — | 44 | MHz |
| PLL0IN | SR | — | PLL0 input clock duty cycle(1) | 40 | — | 60 | % |
| fINFIN | SR | — | PLL0 PFD (Phase Frequency Detector) input clock frequency | 8 | — | 20 | MHz |
| fPLL0VCO | CC | P | PLL0 VCO frequency | 600 | — |
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| fPLL0IN | SR | — | PLL0 input clock(1) | 8 | — | 44 | MHz |
| ΔPLL0IN | SR | — | PLL0 input clock duty cycle(1) | 40 | — | 60 | % |
| fINFIN | SR | — | PLL0 PFD (Phase Frequency Detector) input clock frequency | 8 | — | 20 | MHz |
| fPLL0VCO | CC | P | PLL0 VCO frequency | 600 | — | 1400 | MHz |
Table 19. PLL0 electrical characteristics (continued)
1. PLL0IN clock retrieved directly from either internal RCOSC or external FXOSC clock. Input characteristics are granted when using internal RCOSC or external oscillator is used in functional mode.
- If the PLL0_PHI1 is used as an input for PLL1, then the PLL0_PHI1 frequency shall obey the maximum input frequency limit set for PLL1 (87.5 MHz, according to Table 20).
3. Jitter values reported in this table refer to the internal jitter, and do not include the contribution of the divider and the path to the output CLKOUT pin.
4. VDD_LV noise due to application in the range VDD_LV = 1.20 V±5 %, with frequency below PLL bandwidth (40 kHz) will be filtered.
4.10.2 PLL1
PLL1 is a frequency modulated PLL with Spread Spectrum Clock Generation (SSCG) support.
| Symbol | Value | Unit | ||||||
|---|---|---|---|---|---|---|---|---|
| C | Parameter | Conditions | Min | Typ | Max | |||
| fPLL1IN | SR | — | PLL1 input clock(1) | — | 37.5 | — | 87.5 | MHz |
| PLL1IN | SR | — | PLL1 input clock duty cycle(1) | — | 35 | — | 65 | % |
| fINFIN | SR | — | PLL1 PFD (Phase Frequency Detector) input clock frequency | — | 37.5 | — | 87.5 | MHz |
| fPLL1VCO | CC | P | PLL1 VCO frequency | — | 600 | — | 1400 | MHz |
| fPLL1PHI0 | CC | D | PLL1 output clock PHI0 | — | 4.762 | — | FSYS(2) | MHz |
| tPLL1LOCK | CC | P | PLL1 lock time | — | — | — | 50 | μs |
| fPLL1MOD | CC | T | PLL1 modulation frequency | — | — | — | 250 | kHz |
| PLL1MOD | CC | T | PLL1 modulation depth (when enabled) | Center spread(3) | 0.25 | — | 2 | % |
| Down spread | 0.5 | — | 4 | % | ||||
| PLL1PHI0SPJ (4) | CC | T | PLL1_PHI0 single period peak to peak jitter | fPLL1PHI0 = 200 MHz, 6-sigma | — | — | 500(5) | ps |
| IPLL1 | CC | D | PLL1 consumption | FINE LOCK state | — | — | 5 | mA |
| Table 20. PLL1 electrical characteristics | |||
|---|---|---|---|
| -- | -- | -- | ------------------------------------------- |
-
PLL1IN clock retrieved directly from either internal PLL0 or external FXOSC clock. Input characteristics are granted when using internal PPL0 or external oscillator is used in functional mode.
-
Refer to Section 4.3: Operating conditions for the maximum operating frequency.
-
The device maximum operating frequency FSYS (max) includes the frequency modulation. If center modulation is selected, the FSYS must be below the maximum by MD (Modulation Depth Percentage), such that FSYS(max)=FSYS(1+MD %). Refer to the Reference Manual for the PLL programming details.
-
Jitter values reported in this table refer to the internal jitter, and do not include the contribution of the divider and the path to the output CLKOUT pin.
-
1.25 V±5 %, application noise below 40 kHz at VDD_LV pin - no frequency modulation.
4.11 Oscillators
4.11.1 Crystal oscillator 40 MHz
Table 21. External 40 MHz oscillator electrical specifications
| Symbol | C | Type | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|---|
| fXTAL | CC | D | Crystal Frequency Range(1) | — | 4(2) | 8 | MHz |
| >8 | 20 | ||||||
| >20 | 40 | ||||||
| tcst | CC | T | Crystal start-up time (3),(4) | TJ = 150 °C | — | 5 | ms |
| trec | CC | D | Crystal recovery time(5) | — | — | 0.5 | ms |
| VIHEXT | CC | D |
| Symbol | C | Type | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|---|
| fXTAL | CC | D | Crystal Frequency Range(1) | — | 4(2) | 8 | MHz |
| >8 | 20 | ||||||
| >20 | 40 | ||||||
| tcst | CC | T | Crystal start-up time (3),(4) | TJ = 150 °C | — | 5 | ms |
| trec | CC | D | Crystal recovery time(5) | — | — | 0.5 | ms |
| VIHEXT | CC |
Table 21. External 40 MHz oscillator electrical specifications (continued)
-
The range is selectable by UTEST miscellaneous DCF client XOSC_FREQ_SEL.
-
The XTAL frequency, if used to feed the PPL0 (or PLL1), shall obey the minimum input frequency limit set for PLL0 (or PLL1).
-
This value is determined by the crystal manufacturer and board design, and it can potentially be higher than the maximum provided.
-
- Proper PC board layout procedures must be followed to achieve specifications.
-
- Crystal recovery time is the time for the oscillator to settle to the correct frequency after adjustment of the integrated load capacitor value.
- 6. Applies to an external clock input and not to crystal mode.
- 7. See crystal manufacturer's specification for recommended load capacitor (CL) values.The external oscillator requires external load capacitors when operating from 8 MHz to 16 MHz. Account for on-chip stray capacitance (CS_EXTAL/CS_XTAL) and PCB capacitance when selecting a load capacitor value. When operating at 20 MHz/40 MHz, the integrated load capacitor value is selected via S/W to match the crystal manufacturer's specification, while accounting for on-chip and PCB capacitance.
- 8. Amplitude on the EXTAL pin after startup is determined by the ALC block, that is the Automatic Level Control Circuit. The function of the ALC is to provide high drive current during oscillator startup, but reduce current after oscillation in order to reduce power, distortion, and RFI, and to avoid over driving the crystal. The operating point of the ALC is dependent on the crystal value and loading conditions.
-
- IXTAL is the oscillator bias current out of the XTAL pin with both EXTAL and XTAL pins grounded. This is the maximum current during startup of the oscillator.
4.11.2 Crystal Oscillator 32 kHz
- fsxosc
- gmsxosc
- Vsxosc
- Isxoosc
- Tsxosc
Table 22. 32 kHz external slow oscillator electrical specifications
4.11.3 RC oscillator 16 MHz
| Table 23. Internal RC oscillator electrical specifications | ||
|---|---|---|
| ------------ | ---- | --- |
| Symbol | C | |
| fTarget | CC | D |
| fvar_noT | CC | P |
| fvar_T | CC | T |
| fvar_SW | T | |
| Tstart_noT | CC | T |
| Tstart_T | CC | T |
| IFIRC | CC | T |
4.11.4 Low power RC oscillator
| Symbol | Parameter | Conditions | ||
|---|---|---|---|---|
| C | ||||
| Fsirc | CC | T | Slow Internal RC oscillator frequency | — |
| fvar_T | CC | P | Frequency variation across temperature | –40 °C < T < 150 °C |
| fvar_V | CC | P | Frequency variation across voltage | –40 °C < T < 150 °C |
| Isirc | CC | T | Slow Internal RC oscillator current | T = 55 °C |
| Tsirc | CC | T | Start up time, after switching ON the internal regulator. | — |
Table 24. 1024 kHz internal RC oscillator electrical characteristics
4.12 ADC system
4.12.1 ADC input description
Figure 8 shows the input equivalent circuit for SARn and SARB channels.
Figure 8. Input equivalent circuit (Fast SARn and SARB channels)
All specifications in the following table valid for the full input voltage range for the analog inputs.
| Symbol | C | D | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|---|
| R20K | CC | D | Internal voltage reference source impedance. | — | 16 | 30 | K |
| ILKG | CC | — | Input leakage current, two ADC channels on input-only pin. | See IO chapter Table 10: I/O input electrical characteristics, parameter ILKG. | |||
| IINJ1 | SR | — | Injection current on analog input preserving functionality at full or degraded performances. | See Operating Conditions chapter Table 5: Operating conditions, IINJ1 parameter. | |||
| CHV_ADC | SR | D | VDD_HV_ADV external capacitance. | See Power Management chapter Table 33: External components integration, CADC parameter. | |||
| CP1 | CC | D | Pad capacitance | See IO chapter Table 10: I/O input |
Table 25. ADC pin specification
| Symbol | C | Parameter | Conditions | Value | Unit |
|---|---|---|---|---|---|
| Min | Max | ||||
| R20KΩ | CC | Internal voltage reference source impedance. | — | 16 | 30 |
| ILKG | CC | Input leakage current, two ADC channels on input-only pin. | See IO chapter Table 10: I/O input electrical characteristics, parameter ILKG. | ||
| IINJ1 | SR | Injection current on analog input preserving functionality at full or degraded performances. | See Operating Conditions chapter Table 5: Operating conditions, IINJ1 parameter. | ||
| CHV_ADC | SR | VDD_HV_ADV external capacitance. | See Power Management chapter Table 33: External components integration, CADC parameter. | ||
| CP1 | CC | Pad capacitance | See IO chapter Table 10: I/O input electrical characteristics, parameter CP1. |
- It enables discharge of up to 100 nF from 5 V every 300 ms. Refer to the device pinout Microsoft Excel file attached to the IO_Definition document for the pads supporting it.
4.12.2 SAR ADC 12 bit electrical specification
The SARn ADCs are 12-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing.
Note: The functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the listed maximum may affect device reliability or cause permanent damage to the device.
| Symbol | C | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|
| CP2 | CC | Internal routing capacitance | SARB channels | — | 2 | pF |
| SARn 10bit channels | — | 0.5 | pF | |||
| SARn 12bit channels | — | 1 | pF | |||
| CS | CC | SAR ADC sampling capacitance | SARn 12bit | — | 5 | pF |
| SARn 10bit | — | 2 | pF | |||
| RSWn | CC | Analog switches resistance | SARB channels | 0 | 1.8 | kΩ |
| SARn 10bit channels | 0 | 0.8 | kΩ | |||
| SARn 12bit channels | 0 | 1.8 | kΩ | |||
| RAD | CC | ADC input analog switches resistance | SARn 12bit | — | 0.8 | kΩ |
| SARn 10bit | — | 3.2 | kΩ | |||
| RCMSW | CC | Common mode switch resistance | Sum of the two resistances | — | 9 | kΩ |
| RCMRL | CC | Common mode resistive ladder | — | 9 | kΩ | |
| RSAFEPD(1) | CC | Discharge resistance for ADC input-only pins (strong pull-down for safety) | VDD_HV_IO = 5.0 V ± 10 % | — | 300 | W |
| VDD_HV_IO = 3.3 V ± 10 % | — | 500 | W | |||
| ABGAP | CC | ADC digital bandgap accuracy | -1.5 | +1.5 | % | |
| CEXT | SR | External capacitance at the pad input pin | To preserve the accuracy of the ADC, it is necessary that analog input pins have low AC impedance. Placing a capacitor with good high frequency characteristics at the input pin of the device can be | |||
| Table 26. SARn ADC electrical specification |
|---|
| --------------------------------------------- |
| Symbol | C | P | Parameter | Conditions | Value Min | Value Max | Unit |
|---|---|---|---|---|---|---|---|
| fADCK | SR | P | Clock frequency | Standard frequency mode | 7.5 | 13.33 | MHz |
| T | High frequency mode | >13.33 | 16.0 | ||||
| tADCINIT | SR | - | ADC initialization time | - | 1.5 | - | µs |
| tADCBISINIT | SR | - | ADC BIAS initialization time | - | 5 | - | µs |
| tADCPRECH | SR | T | ADC decharge time | Fast SAR | 1/fADCK | - | µs |
| Slow SAR (SARDAC_B) | 2/fADCK | - | |||||
| ΔVPRECH | SR | D | Decharge voltage precision | TJ < 150 °C | 0 | 0.25 | V |
| R20KΩ | CC | D | Internal voltage reference source impedance | - | 16 | 30 | KΩ |
| ΔVINTREF | CC | P | Internal reference voltage precision | Applies to all internal reference points (VSS_HV_ADR, 1/3 * VDD_HV_ADR, 2/3 * VDD_HV_ADR, VDD_HV_ADR) | -0.20 | 0.20 | V |
| Symbol | C | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|
| fADCK | SR | Clock frequency | Standard frequency mode | 7.5 | 13.33 | MHz |
| High frequency mode | >13.33 | 16.0 | ||||
| tADCINIT | SR | ADC initialization time | — | 1.5 | — | μs |
| tADCBISINIT | SR | ADC BIAS initialization time | — | 5 | — | μs |
| tADCPRECH | SR | ADC decharge time | Fast SAR | 1/fADCK | — | μs |
| Slow SAR (SARDAC_B) | 2/fADCK | — | ||||
| ΔVPRECH | SR | Decharge voltage precision | TJ < 150 °C | 0 | 0.25 | V |
| R20KΩ | CC | Internal voltage reference source impedance | — | 16 | 30 | KΩ |
| ΔVINTREF | CC | Internal reference voltage precision | Applies to all internal reference points (VSS_HV_ADR, 1/3 * VDD_HV_ADR, 2/3 * VDD_HV_ADR, VDD_HV_ADR) | -0.20 | 0.20 | V |
| Symbol | C | Parameter | Conditions | Value | Unit | |
|---|---|---|---|---|---|---|
| Min | Max | |||||
| fADCK | SR | P | Clock frequency | |||
| Standard frequency mode | 7.5 | 13.33 | MHz | |||
| T | High frequency mode | >13.33 | 16.0 | |||
| tADCINIT | SR | — | ADC initialization time | — | 1.5 | µs |
| tADCBISINIT | SR | — | ADC BIAS initialization time | — | 5 | µs |
| tADCPRECH |
| Table 26. 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- Minimum ADC sample times are dependent on adequate charge transfer from the external driving circuit to the internal sample capacitor. The time constant of the entire circuit must allow the sampling capacitor to charge within 1/2 LSB within the sampling window. Refer to Figure 8 for models of the internal ADC circuit, and the values to use in external RC sizing and calculating the sampling window duration.
2. Mode1: 6 sampling cycles + 10 conversion cycles at 13.33 MHz.
3. Mode2: 5 sampling cycles + 10 conversion cycles at 13.33 MHz.
4. Mode3: 6 sampling cycles + 10 conversion cycles at 16 MHz.
- IADCREFH and IADCREFL are independent from ADC clock frequency. It depends on conversion rate: consumption is driven by the transfer of charge between internal capacitances during the conversion.
6. Current parameter values are for a single ADC.
- 7. TUE is granted with injection current within the range defined in Table 25, for parameters classified as T and D.
-
- DNL is granted with injection current within the range defined in Table 25, for parameters classified as T and D.
4.12.3 SAR ADC 10 bit electrical specification
The ADC comparators are 10-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing.
Note: The functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the listed maximum may affect device reliability or cause permanent damage to the device.
| Symbol | C | P | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|---|
| Value | |||||||
| Min | Max | ||||||
| fADCK | SR | P | Clock frequency | Standard frequency mode | 7.5 | 13.33 | MHz |
| T | High frequency mode | >13.33 | 16.0 | ||||
| tADCINIT | SR | — | ADC initialization time | — | 1.5 | — | μs |
| tADCBIASINIT | SR | — | ADC BIAS initialization time | — | 5 |
| Symbol | C | Parameter | Conditions | Value Min | Value Max | Unit |
|---|---|---|---|---|---|---|
| fADCK | SR | Clock frequency | Standard frequency mode | 7.5 | 13.33 | MHz |
| P | High frequency mode | >13.33 | 16.0 | |||
| T | ||||||
| tADCINIT | SR | ADC initialization time | — | 1.5 | — | μs |
| tADCBIA SINIT | SR | ADC BIAS initialization time | — | 5 | — | μs |
| tADCINITSBY | SR | ADC initialization time in standby |
Table 27. ADC-Comparator electrical specification (continued)
| Symbol | C | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|---|
| fADCK | SR | P | Clock frequency | 7.5 | 13.33 | MHz |
| T | High frequency mode | >13.33 | 16.0 | |||
| tADCINIT | SR | — | ADC initialization time | 1.5 | — | µs |
| tADCBASINIT | SR | — | ADC BIAS initialization time | 5 | — | µs |
| tADCINITSBY | SR | — | ADC initialization time in standby | 8 | — | µs |
| tADCPRECH | ||||||
| Table 27. ADC-Comparator electrical specification (continued) |
-
Minimum ADC sample times are dependent on adequate charge transfer from the external driving circuit to the internal sample capacitor. The time constant of the entire circuit must allow the sampling capacitor to charge within 1/2 LSB within the sampling window. Refer to Figure 8 for models of the internal ADC circuit, and the values to use in external RC sizing and calculating the sampling window duration.
-
IADCREFH and IADCREFL are independent from ADC clock frequency. It depends on conversion rate: consumption is driven by the transfer of charge between internal capacitances during the conversion.
-
Current parameter values are for a single ADC.
4. All channels of all SAR-ADC12bit and SAR-ADC10bit are impacted with same degradation, independently from the ADC and the channel subject to current injection.
-
TUE is granted with injection current within the range defined in Table 25, for parameters classified as T and D.
-
DNL is granted with injection current within the range defined in Table 25, for parameters classified as T and D.
4.13 Temperature sensor
The following table describes the temperature sensor electrical characteristics.
| | | | | | Value | Unit | |---|---|---|---|---|---|---|---| | Symbol | | C | Parameter | Conditions | Min | Typ | Max | Unit | | — | CC | — | Temperature monitoring range | — | –40 | — | 150 | °C | | TSENS | CC | T | Sensitivity | — | — | 5.18 | — | mV/°C | | TACC | CC | P | Accuracy | TJ < 150 °C | –3 | — | 3 | °C |
Table 28. Temperature sensor electrical characteristics
4.14 LFAST pad electrical characteristics
The LFAST(LVDS Fast Asynchronous Serial Transmission) pad electrical characteristics apply to high-speed debug serial interfaces on the device.
4.14.1 LFAST interface timing diagrams
Figure 9. LFAST LVDS timing definition
Figure 11. Rise/fall time
4.14.2 LFAST LVDS interface electrical characteristics
The following table contains the electrical characteristics for the LFAST interface.
| Table 29. LVDS pad startup and receiver electrical characteristics(1),(2) |
|---|
| --------------------------------------------------------------------------- |
| C | Parameter | Value | |||
|---|---|---|---|---|---|
| Symbol | STARTUP(3),(4) | Conditions | Min | ||
| tSTRT_BIAS | CC | T | Bias current reference startup time(5) | — | — |
| tPD2NM_TX | CC | T | Transmitter startup time (power down to normal mode)(6) | — | — |
58/142 DS11701 Rev 4
| Value | |||||||||
|---|---|---|---|---|---|---|---|---|---|
| Symbol | C | Parameter Conditions | |||||||
| Min | |||||||||
| tSM2NM_TX | CC | T | Transmitter startup time (sleep mode to normal mode)(7) | Not applicable to the MSC/DSPI LVDS pad | — | ||||
| tPD2NM_RX | CC | T | Receiver startup time (power down to normal mode)(8) | — | — | ||||
| tPD2SM_RX | CC | T | Receiver startup time (power down to sleep mode)(9) | Not applicable to the MSC/DSPI LVDS pad | — | ||||
| ILVDS_BIAS | CC | D | LVDS bias current consumption TRANSMISSION LINE CHARACTERISTICS (PCB Track) | Tx or Rx enabled | — | ||||
| Z0 | SR | D | Transmission line characteristic impedance | — | 47.5 | ||||
| ZDIFF | SR | D | Transmission line differential impedance | — | 95 | ||||
| RECEIVER | |||||||||
| VICOM | SR | T | Common mode voltage | — | 0.15 (10) | ||||
| VI | SR | T | Differential input voltage(12) | — | 100 | ||||
| VHYS | CC | T | Input hysteresis | — | 25 | ||||
| RIN | CC | D | Terminating resistance | VDD_HV_IO = 5.0 V ± 10 % -40 °C <tj< 150="" td="" °c<=""> | 80 | — | 150 | | 80 |
| VDD_HV_IO = 3.3 V ± 10 % -40 °C <tj < 150 °C</tj | 80 | ||||||||
| CIN | CC | D | Differential input capacitance(13) | — | — | ||||
| ILVDS_RX | CC | C | Receiver DC current consumption | Enabled | — | ||||
| IPIN_RX | CC | D | Maximum consumption on receiver input pin | VI = 400 mV, RIN = 80 | — | ||||
| Table 29. LVDS pad startup and receiver electrical characteristics(1),(2) (continued) | |||||||||
| --------------------------------------------------------------------------------------- | |||||||||
| --------------------------------------------------------------------------------------- |
-
The LVDS pad startup and receiver electrical characteristics in this table apply to both the LFAST & High-speed Debug (HSD) LVDS pad.
-
All LVDS pad electrical characteristics are valid from -40 °C to 150 °C.
-
All startup times are defined after a 2 peripheral bridge clock delay from writing to the corresponding enable bit in the LVDS control registers (LCR) of the LFAST and High-speed Debug modules. The value of the LCR bits for the LFAST/HSD modules don't take effect until the corresponding SIUL2 MSCR ODC bits are set to LFAST LVDS mode. Startup times for MSC/DSPI LVDS are defined after 2 peripheral bridge clock delay after selecting MSC/DSPI LVDS in the corresponding SIUL2 MSCR ODC field.
-
Startup times are valid for the maximum external loads CL defined in both the LFAST/HSD and MSC/DSPI transmitter electrical characteristic tables.
-
Bias startup time is defined as the time taken by the current reference block to reach the settling bias current after being enabled.
-
Total transmitter startup time from power down to normal mode is tSTRT_BIAS + tPD2NM_TX + 2 peripheral bridge clock periods.
-
Total transmitter startup time from sleep mode to normal mode is tSM2NM_TX + 2 peripheral bridge clock periods. Bias block remains enabled in sleep mode.
Electrical characteristics SPC584Bx
-
- Total receiver startup time from power down to normal mode is tSTRT_BIAS + tPD2NM_RX + 2 peripheral bridge clock periods.
-
- Total receiver startup time from power down to sleep mode is tPD2SM_RX + 2 peripheral bridge clock periods. Bias block remains enabled in sleep mode.
-
- Absolute min = 0.15 V (285 mV/2) = 0 V
-
- Absolute max = 1.6 V + (285 mV/2) = 1.743 V
-
- Value valid for LFAST mode. The LXRXOP[0] bit in the LFAST LVDS Control Register (LCR) must be set to one to ensure proper LFAST receive timing.
-
- Total internal capacitance including receiver and termination, co-bonded GPIO pads, and package contributions.
| Symbol | Parameter | Conditions | Value | ||
|---|---|---|---|---|---|
| C | Min | ||||
| fDATA | SR | D | Data rate | — | — |
| VOS | CC | P | Common mode voltage | — | 1.08 |
| VOD | CC | P | Differential output voltage swing (terminated)(4),(5) | — | 110 |
| tTR | CC | T | Rise time from - VOD(min) to + VOD(min) . Fall time from + VOD(min) to - VOD(min) | — | 0.26 |
| CL SR | D | External lumped differential load | VDD_HV_IO = 4.5 V | ||
| ILVDS_TX | CC | C | Transmitter DC current consumption | Enabled | — |
| IPIN_TX | CC | D | Transmitter DC current sourced through output pin | — | 1.1 |
Table 30. LFAST transmitter electrical characteristics(1),(2),(3)
-
This table is applicable to LFAST LVDS pads used in LFAST configuration (SIUL2_MSCR_IO_n.ODC=101).
-
The LFAST and High-Speed Debug LFAST pad electrical characteristics are based on worst case internal capacitance values shown in Figure 12.
-
All LFAST and High-Speed Debug LVDS pad electrical characteristics are valid from -40 °C to 150 °C.
4. Valid for maximum data rate fDATA. Value given is the capacitance on each terminal of the differential pair, as shown in Figure 12.
- Valid for maximum external load CL.
4.14.3 LFAST PLL electrical characteristics
The following table contains the electrical characteristics for the LFAST PLL.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| fRF_REF | SR | D | PLL reference clock frequency (CLKIN) | — | 10(2) | — | 30 |
| ERRREF | CC | D | PLL reference clock frequency error | — | -1 | — | 1 |
| DCREF | CC | D | PLL reference clock duty cycle (CLKIN) | — | 30 | — | 70 |
| PN | CC | D | Integrated phase noise (single side band) | fRF_REF = 20 MHz | — | — | -58 |
| fVCO | CC | P | PLL VCO frequency | — | 312 | — | 320(3) |
| tLOCK | CC | D | PLL phase lock | — | — | — | 150(4) |
| Table 31. LFAST PLL electrical characteristics(1) | ||
|---|---|---|
| -- | -- | --------------------------------------------------- |
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| fRF_REF | SR | D PLL reference clock frequency (CLKIN) | — | 10$^{(2)}$ | — | 30 | MHz |
| ERRREF | CC | D PLL reference clock frequency error | — | -1 | — | 1 | % |
| DCREF | CC | D PLL reference clock duty cycle (CLKIN) | — | 30 | — | 70 | % |
| PN | CC | D Integrated phase noise (single side band) | fRF_REF = 20 MHz | — | — | -58 | dBc |
| fVCO | CC | P PLL VCO frequency | — | 312 | — | 320$^{(3)}$ | MHz |
| tLOCK | CC | D PLL phase lock | — | — | — | 150$^{(4)}$ | µs |
Table 31. LFAST PLL electrical characteristics(1) (continued)
-
The specifications in this table apply to both the interprocessor bus and debug LFAST interfaces.
-
If the input frequency is lower than 20 MHz, it is required to set a input division factor of 1.
-
The 320 MHz frequency is achieved with a 20 MHz reference clock.
-
The total lock time is the sum of the coarse lock time plus the programmable lock delay time 2 clock cycles of the peripheral bridge clock that is connected to the PLL on the device (to set the PLL enable bit).
-
Measured at the transmitter output across a 100 termination resistor on a device evaluation board. See Figure 12.
4.15 Power management
The power management module monitors the different power supplies as well as it generates the required internal supplies. The device can operate in the following configurations:
| Device | External regulator | Internal SMPS regulator | Internal linear regulator external ballast | Internal linear regulator internal ballast | Auxiliary regulator | Clamp regulator | Internal standby regulator(1) |
|---|---|---|---|---|---|---|---|
| SPC584Bx | — | — | X(2) | X | X | X | X |
-
Standby regulator is automatically activated when the device enters standby mode.
-
For compatibility purpose with SPC584Cx/SPC58ECx, or for the optimization of the power dissipation, the operability of the device with external ballast can be used. The external ballast option is available only on specific devices, contact the local sales.
4.15.1 Power management integration
Use the integration schemes provided below to ensure the proper device function, according to the selected regulator configuration.
The internal regulators are supplied by VDD_HV_IO_MAIN supply and are used to generate VDD_LV supply.
Place capacitances on the board as near as possible to the associated pins and limit the serial inductance of the board to less than 5 nH.
It is recommended to use the internal regulators only to supply the device itself.
Figure 13. Internal regulator with external ballast mode
Figure 14. Internal regulator with internal ballast mode
Figure 15. Standby regulator with external ballast mode
| Figure 16. Standby regulator with internal ballast mode | |
|---|---|
| Symbol | |
| ------------------- | ---- |
| Common Components | |
| CE | SR |
| RE | SR |
| CLVn | SR |
| RLVn | SR |
| CBV | SR |
| CHVn | SR |
Table 33. External components integration
| Symbol | C | Parameter | Conditions(1) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Common Components | |||||||
| CE | SR | D | Internal voltage regulator stability external capacitance(2) (3) | 1.1 | 2.2 | 3.0 | µF |
| RE | SR | D | Stability capacitor equivalent serial resistance | Total resistance including board track | — | — | 50 |
| CLVn | SR | D | Internal voltage regulator decoupling external capacitance(3) (4) (5) | Each VDD_LV/VSS pair | — | 47 | — |
| RLVn | SR | D | Stability capacitor equivalent serial resistance | — | — | — | 50 |
| CBV | SR | D | Bulk capacitance for HV supply(3) | on one VDD_HV_IO_MAIN/ VSS pair | — | 4.7 | — |
| CHVn | SR | D | Decoupling capacitance for ballast and IOs(3) | on all VDD_HV_IO/VSS and VDD_HV_ADV/VSS pairs | — | 100 | — |
Table 33. External components integration (continued)
- VDD = 3.3 V ± 10 % / 5.0 V ± 10 %, TJ = –40 / 150 °C, unless otherwise specified.
2. Recommended X7R or X5R ceramic –50 % / +35 % variation across process, temperature, voltage and after aging.
3. CE capacitance is required both in internal and external regulator mode.
4. For noise filtering, add a high frequency bypass capacitance of 10 nF.
-
For applications it is recommended to implement at least 5 CLV capacitances.
-
Recommended X7R capacitors. For noise filtering, add a high frequency bypass capacitance of 100 nF.
-
CB capacitance is required if only the external ballast is implemented.
4.15.2 Voltage regulators
| Symbol | C Parameter | Value | |||
|---|---|---|---|---|---|
| Conditions | Min | ||||
| VMREG | CC | P | Power-up, before trimming, no load | 1.14 | |
| CC | P | Main regulator output voltage | After trimming, maximum load | 1.09 | |
| Main regulator current provided to | Internal ballast | — | |||
| IDDMREG | CC | T | VDD_LV domain The maximum current supported is the sum of the Main Regulator and the Auxiliary Regulator maximum current both regulators are working in parallel. | External ballast | — |
| IDDCLAMP | CC | D | Main regulator rush current sinked from VDD_HV_IO_MAIN domain during VDD_LV domain loading | Power-up condition | — |
| IDDMREG | CC | T | Main regulator output current variation | 20 μs observation window | -100 |
| D | Main regulator current | IMREG = max | — | ||
| IMREGINT | CC | D | consumption | IMREG = 0 mA |
Table 34. Linear regulator specifications
Table 35. Auxiliary regulator specifications
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| VAUX | CC P | Aux regulator output voltage | After trimming, internal regulator mode | 1.09 | 1.19 | 1.22 | V |
| IDDAUX | CC T | Aux regulator current provided to VDD_LV domain | — | — | — | 150 | mA |
| IDDAUX | CC T | Aux regulator current variation | 20 μs observation window | -100 | — | 100 | mA |
| IAUXINT | CC D | Aux regulator current consumption | IMREG = max | — | — | 1.1 | mA |
| D | IMREG = 0 mA | — | — | 1.1 | mA |
Electrical characteristics SPC584Bx
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| VAUX | CC | P | Aux regulator output voltage | After trimming, internal regulator mode | 1.09 | 1.19 | 1.22 |
| IDDAUX | CC | T | Aux regulator current provided to VDD_LV domain | — | — | 150 | mA |
| ΔIDDAUX | CC | T | Aux regulator current variation | 20 μs observation window | -100 | — | 100 |
| IAUXINT | CC | D | Aux regulator current consumption | IMREG = max | — |
Table 36. Clamp regulator specifications
Table 37. Standby regulator specifications
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|---|
| Min | Typ | Max | ||||||
| VSBY | CC | P | Standby regulator output voltage | After trimming, maximum load | 1.02 | 1.06 | 1.26 | V |
| IDDSBY | CC | T | Standby regulator current provided to VDD_LV domain | External Ballast | — | — | 50 | mA |
| Internal Ballast | — | — | 10 | mA |
4.15.3 Voltage monitors
The monitors and their associated levels for the device are given in Table 38. Figure 17 illustrates the workings of voltage monitoring threshold.
| Symbol | C | Supply/Parameter(1) | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| PowerOn Reset HV | |||||||
| VPOR200_C | CC | P | VDD_HV_IO_MAIN | — | 1.80 | 2.18 | 2.40 |
| Minimum Voltage Detectors HV | |||||||
| VMVD270_C | CC | P | VDD_HV_IO_MAIN | — | 2.71 | 2.76 | 2.80 |
| VMVD270 |
| Table 38. Voltage monitor electrical characteristics |
|---|
| Symbol | C | Supply/Parameter(1) | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| PowerOn Reset HV | |||||||
| VPOR200_C | CC | P | VDD_HV_IO_MAIN | — | 1.80 | 2.18 | 2.40 |
| Minimum Voltage Detectors HV | |||||||
| VMVD270_C | CC | P | VDD_HV_IO_MAIN | — | 2.71 | 2.76 | 2.80 |
| VMVD270_F | CC | P | VDD_HV_FLA | — | 2.71 | 2.76 | 2.80 |
| VMVD270_SBY | CC | P | VDD_HV_IO_MAIN (in Standby) | — | 2.71 | 2.76 | 2.80 |
| Low Voltage Detectors HV | |||||||
| VLVD290_C | CC | P | VDD_HV_IO_MAIN | — | 2.89 | 2.94 | 2.99 |
| VLVD290_F | CC | P | VDD_HV_FLA | — | 2.89 | 2.94 | 2.99 |
| VLVD290_AS | CC | P | VDD_HV_ADV (ADCSAR pad) | — | 2.89 | 2.94 | 2.99 |
| VLVD290_IF | CC | P | VDD_HV_IO_ETH | — | 2.89 | 2.94 | 2.99 |
| VLVD400_AS | CC |
-
Even if LVD/HVD monitor reaction is configurable, the application ensures that the device remains in the operative condition range, and the internal LVDx monitors are disabled by the application. Then an external voltage monitor with minimum threshold of VDD_LV(min) = 1.08 V measured at the device pad, has to be implemented. For HVDx, if the application disables them, then they need to grant that VDD_LV and VDD_HV voltage levels stay withing the limitations provided in Section 4.2: Absolute maximum ratings.
-
The values reported are Trimmed values, where applicable.
-
See Figure 17. Transitions shorter than minimum are filtered. Transitions longer than maximum are not filtered, and will be delayed by TVMFILTER time. Transitions between minimum and maximum can be filtered or not filtered, according to temperature, process and voltage variations.
4.16 Flash
The following table shows the Wait state configuration.
| APC | RWSC | Frequency range (MHz) |
|---|---|---|
| 000(1) | 0 | f ≤ 30 |
| 1 | f ≤ 60 | |
| 2 | f ≤ 90 | |
| 3 | f ≤ 120 | |
| 100(2) | 0 | f ≤ 30 |
| 1 | f ≤ 60 | |
| 2 | f ≤ 90 | |
| 3 | f ≤ 120 | |
| 001(3) | 2 | 55 < f ≤ 80 |
| 3 | 55 < f ≤ 120 |
-
STD pipelined, no address anticipation.
-
No pipeline (STD + 1 Tck).
-
Pipeline with 1 Tck address anticipation.
The following table shows the Program/Erase characteristics.
| Table 40. Flash memory program and erase specifications |
|---|
| --------------------------------------------------------- |
| Value | ||
|---|---|---|
| Symbol | Characteristics(1)(2) | Typ(3) |
| tdwprogram | Double Word (64 bits) program time [Packaged part] | 43 |
| tpprogram | Page (256 bits) program time | 72 |
| tpprogrameep | Page (256 bits) program time Data Flash - EEPROM (partition 1) [Packaged part] | 83 |
| tqprogram | Quad Page (1024 bits) program time | 220 |
| tqprogrameep | Quad Page (1024 bits) program time Data Flash - EEPROM (partition 1) [Packaged part] | 245 |
| Table 40. Flash memory program and erase specifications (continued) | |
|---|---|
| ---------------- | --------------------------------------------------------------------------- |
| Symbol | Characteristics(1)(2) |
| t16kpperase | 16 KB block pre-program and erase time |
| t32kpperase | 32 KB block pre-program and erase time |
| t64kpperase | 64 KB block pre-program and erase time |
| t128kpperase | 128 KB block pre-program and erase time |
| t256kpperase | 256 KB block pre-program and erase time |
| t16kprogram | 16 KB block program time |
| t32kprogram | 32 KB block program time |
| t64kprogram | 64 KB block program time |
| t128kprogram | 128 KB block program time |
| t256kprogram | 256 KB block program time |
| t16kprogrameep | Program 16 KB Data Flash - EEPROM (partition 1) [Packaged part] |
| t16keraseeep | Erase 16 KB Data Flash - EEPROM (partition 1) [Packaged part] |
| t16kprogrameep | Program 16 KB HSM Data Flash - EEPROM (partition 1) [Packaged part] |
| t16keraseeep | Erase 16 KB HSM Data Flash - EEPROM (partition 1) [Packaged part] |
| tprr | Program rate(8) |
| tpr | Erase rate(8) |
| ttprfm | Program rate Factory Mode(8) |
| terfm | Erase rate Factory Mode(8) |
| tffprogram | Full flash programming time(9) |
| Value | ||
|---|---|---|
| Symbol | Characteristics(1)(2) | Typ(3) |
| tfferase | Full flash erasing time(9) | 9.9 |
| tESRT | Erase suspend request rate(10) | |
| tPSRT | Program suspend request rate(10) | 30 |
| tAMRT | Array Integrity Check - Margin Read suspend request rate | 15 |
| tPSUS | Program suspend latency(11) | — |
| tESUS | Erase suspend latency(11) | — |
| tAIC0S | Array Integrity Check (2.0 MB, sequential)(12) | 12.8 |
| tAIC256KS | Array Integrity Check (256 KB, sequential)(12) | 1.5 |
| tAIC0P | Array Integrity Check (2.0 MB, proprietary)(12) | 4.0 |
| tMR0S | Margin Read (2.0 MB, sequential)(12) | 35 |
| tMR256KS | Margin Read (256 KB, sequential)(12) | 4.0 |
| Table 40. Flash memory program and erase specifications (continued) |
|---|
| --------------------------------------------------------------------- |
-
Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.
-
Actual hardware operation times; this does not include software overhead.
-
Typical program and erase times assume nominal supply values and operation at 25 °C.
-
- Typical End of Life program and erase times represent the median performance and assume nominal supply values. Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but not tested.
-
- Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.
-
- Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5 %) supply voltages.
-
- Initial maximum "All temp" program and erase times provide guidance for time-out limits used in the factory and apply for less than or equal to 100 program or erase cycles, –40 °C < TJ < 150 °C junction temperature and nominal (± 5 %) supply voltages.
- 8. Rate computed based on 256 KB sectors.
- 9. Only code sectors, not including EEPROM.
- 10. Time between suspend resume and next suspend. Value stated actually represents Min value specification.
- 11. Timings guaranteed by design.
- 12. AIC is done using system clock, thus all timing is dependent on system frequency and number of wait states. Timing in the table is calculated at max frequency.
All the Flash operations require the presence of the system clock for internal synchronization. About 50 synchronization cycles are needed: this means that the timings of the previous table can be longer if a low frequency system clock is used.
| Characteristics(1) (2) | |
|---|---|
| Symbol | |
| NCER16K | 16 KB CODE Flash endurance |
| NCER32K | 32 KB CODE Flash endurance |
| NCER64K | 64 KB CODE Flash endurance |
| NCER128K | 128 KB CODE Flash endurance |
| 256 KB CODE Flash endurance | |
| NCER256K | 256 KB CODE Flash endurance(3) |
| NDER16K | 16 KB DATA EEPROM Flash endurance |
| NDER16K | 16 KB HSM DATA EEPROM Flash endurance |
| tDR1k | Minimum data retention Blocks with 0 - 1,000 P/E cycles |
| tDR10k | Minimum data retention Blocks with 1,001 - 10,000 P/E cycles |
| tDR100k | Minimum data retention Blocks with 10,001 - 100,000 P/E cycles |
| tDR250k | Minimum data retention Blocks with 100,001 - 250,000 P/E cycles |
| Table 41. Flash memory life specification | ||||
|---|---|---|---|---|
| -- | -- | -- | -- | ------------------------------------------- |
-
Program and erase cycles supported across specified temperature specifications.
-
It is recommended that the application enables the core cache memory.
-
10K cycles on 4-256 KB blocks is not intended for production. Reduced reliability and degraded erase time are possible.
4.17 AC specifications
All AC timing specifications are valid up to 150 °C, except where explicitly noted.
4.17.1 Debug and calibration interface timing
4.17.1.1 JTAG interface timing
| Symbol | Value(1),(2) | Unit | |||||
|---|---|---|---|---|---|---|---|
| # | C | Characteristic | Min | Max | |||
| 1 | tJCYC | CC | D | TCK cycle time | 100 | — | ns |
| 2 | tJDC | CC | T | TCK clock pulse width | 40 | 60 | % |
| 3 | tTCKRISE | CC | D | TCK rise and fall times (40 %–70 %) | — | 3 | ns |
| 4 | tTMSS, tTDIS | CC | D | TMS, TDI data setup time | 5 | — | ns |
| 5 | tTMSH, tTDIH | CC | D | TMS, TDI data hold time | 5 | — | ns |
| 6 | tTDOV | CC | D | TCK low to TDO data valid | — | 15(3) | ns |
| 7 | tTDOI | CC | D | TCK low to TDO data invalid | 0 | — | ns |
| 8 | tTDOHZ | CC | D | TCK low to TDO high impedance | — | 15 | ns |
| 9 | tJCMPPW | CC | D | JCOMP assertion time | 100 | — | ns |
| 10 | tJCMPS | CC | D | JCOMP setup time to TCK low | 40 | — | ns |
| 11 | tBSDV | CC | D | TCK falling edge to output valid | — | 600(4) | ns |
| 12 | tBSDVZ | CC | D | TCK falling edge to output valid out of high impedance | — | 600 | ns |
| 13 | tBSDHZ CC D | TCK falling edge to output high impedance | — | 600 | ns | ||
| 14 | tBSDST CC D Boundary scan input valid to TCK rising edge | 15 | — | ns | |||
| 15 | tBSDHT | CC | D | TCK rising edge to boundary scan input invalid | 15 | — | ns |
Table 42. JTAG pin AC electrical characteristics
-
These specifications apply to JTAG boundary scan only. See Table 43 for functional specifications.
-
JTAG timing specified at VDD_HV_IO_JTAG = 4.0 to 5.5 V and max. loading per pad type as specified in the I/O section of the datasheet.
-
Timing includes TCK pad delay, clock tree delay, logic delay and TDO output pad delay.
-
Applies to all pins, limited by pad slew rate. Refer to IO delay and transition specification and add 20 ns for JTAG delay.
Figure 21. JTAG boundary scan timing
DS11701 Rev 4 79/142
4.17.1.2 Nexus interface timing
| Symbol | C | Characteristic | Value(1) | |||
|---|---|---|---|---|---|---|
| # | Max | |||||
| 7 | tEVTIPW | CC | D | EVTI pulse width | 4 | — |
| 8 | tEVTOPW | CC | D | EVTO pulse width | 40 | — |
| 9 | tTCYC | TCK cycle time | 2(3),(4) | — | ||
| CC | D | Absolute minimum TCK cycle time(5) (TDO sampled on posedge of TCK) Absolute minimum TCK cycle time(7) (TDO sampled on negedge of TCK) | 40(6) 20(6) | — | ||
| 11 | tNTDIS | CC | D | TDI data setup time | 5 | — |
| 12 | tNTDIH | CC | D | TDI data hold time | 5 | — |
| 13 | tNTMSS | CC | D | TMS data setup time | 5 | — |
| 14 | tNTMSH | CC | D | TMS data hold time | 5 | — |
| 15 | — | CC | D | TDO propagation delay from falling edge of TCK(8) | — | 16 |
| 16 | — | CC | D | TDO hold time with respect to TCK falling edge (minimum TDO propagation delay) | 2.25 | — |
Table 43. Nexus debug port timing
- Nexus timing specified at VDD_HV_IO_JTAG = 3.0 V to 5.5 V, and maximum loading per pad type as specified in the I/O section of the data sheet.
- 2. tCYC is system clock period.
-
- Achieving the absolute minimum TCK cycle time may require a maximum clock speed (system frequency / 8) that is less than the maximum functional capability of the design (system frequency / 4) depending on the actual peripheral frequency being used. To ensure proper operation TCK frequency should be set to the peripheral frequency divided by a number greater than or equal to that specified here.
-
- This is a functionally allowable feature. However, it may be limited by the maximum frequency specified by the Absolute minimum TCK period specification.
-
- This value is TDO propagation time 36 ns + 4 ns setup time to sampling edge.
- 6. This may require a maximum clock speed (system frequency / 8) that is less than the maximum functional capability of the design (system frequency / 4) depending on the actual system frequency being used.
-
- This value is TDO propagation time 16 ns + 4 ns setup time to sampling edge.
-
- Timing includes TCK pad delay, clock tree delay, logic delay and TDO output pad delay.
Figure 23. Nexus event trigger and test clock timings
4.17.1.3 External interrupt timing (IRQ pin)
Table 44. External interrupt timing
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| IRQ Pulse Width Low | tIPWL | 3 | — | tcyc |
| IRQ Pulse Width High | tIPWH | 3 | — | tcyc |
| IRQ Edge to Edge Time(1) | tICYC | 6 | — | tcyc |
- Applies when IRQ pins are configured for rising edge or falling edge events, but not both.
4.17.2 DSPI timing with CMOS pads
DSPI channel frequency support is shown in Table 45. Timing specifications are shown in the tables below.
| Max usable frequency (MHz)(2),(3) | |
|---|---|
| Full duplex – Classic timing (Table 46) | |
| Full duplex – Modified timing (Table 47) | |
| CMOS (Master | |
| mode) | Output only mode (SCK/SOUT/PCS) (Table 46 and Table 47) |
| Output only mode TSB mode (SCK/SOUT/PCS) | |
| CMOS (Slave mode Full duplex) (Table 48) |
-
Each DSPI module can be configured to use different pins for the interface. Refer to the device pinout Microsoft Excel file attached to the IO_Definition document for the available combinations. It is not possible to reach the maximum performance with every possible combination of pins.
-
Maximum usable frequency can be achieved if used with fastest configuration of the highest drive pads.
-
Maximum usable frequency does not take into account external device propagation delay.
4.17.2.1 DSPI master mode full duplex timing with CMOS pads
4.17.2.1.1 DSPI CMOS master mode – classic timing
Note: In the following table, all output timing is worst case and includes the mismatching of rise and fall times of the output pads.
Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1
| # | Symbol | Characteristic | Condition | Value(1) | |||
|---|---|---|---|---|---|---|---|
| C | Pad drive(2) | Load (CL) | Min | ||||
| 1 | tSCK | D SCK cycle time | SCK drive strength | ||||
| CC | Very strong | 25 pF | 59.0 | ||||
| Strong | 50 pF | 80.0 Medium |
| Condition | Value(1) | |||||||
|---|---|---|---|---|---|---|---|---|
| # | Symbol | C | Characteristic | Pad drive(2) SCK and PCS drive strength | Load (CL) | Min | Max | |
| D PCS to SCK | Very strong | 25 pF | (N(3) × tSYS(4)) – 16 | — | ||||
| 2 | CC | Strong | 50 pF | (N(3) × tSYS(4)) – 16 | — | |||
| tCSC | delay | Medium PCS medium and SCK strong SCK and PCS drive strength | 50 pF PCS = 50 pF SCK = 50 pF | (N(3) × tSYS(4)) – 16 (N(3) × tSYS(4)) – 29 | — — | |||
| tASC CC | Very strong | PCS = 0 pF SCK = 50 pF | (M(5) × tSYS(4)) – 35 | — | ||||
| 3 | CC | D After SCK delay D SCK duty | Strong Medium | PCS = 0 pF SCK = 50 pF PCS = 0 pF SCK = 50 pF SCK drive strength | (M(5) × tSYS(4)) – 35 (M(5) × tSYS(4)) – 35 PCS medium and SCK strong | — — PCS = 0 pF SCK = 50 pF | ||
| Very strong | 0 pF | 1/2tSCK – 2 | 1/2tSCK + 2 | |||||
| 4 | tSDC | cycle(6) | Strong | 0 pF PCS strobe timing | 1/2tSCK – 2 | 1/2tSCK + 2 | ||
| 5 | tPCSC | CC | D PCSx to PCSS | PCS and PCSS drive strength | ||||
| 6 | tPASC | CC | D PCSS to PCSx | PCS and PCSS drive strength | ||||
| time(7) | Strong SCK drive strength | 25 pF SIN setup time | 16.0 | — | ||||
| 7 | tSUI | CC | D SIN setup time to SCK(8) | Very strong | 25 pF | 25.0 | — | |
| Strong | 50 pF | 31.0 | — |
Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1 (continued)
Table 46. DSPI CMOS master classic timing (full duplex and output only) MTFE = 0, CPHA = 0 or 1 (continued)
| Symbol | Condition | Value(1) | ||||||
|---|---|---|---|---|---|---|---|---|
| # | C | Characteristic D SIN hold time from SCK(8) | Pad drive(2) SCK drive strength | Load (CL) SIN hold time | Min | Max | ||
| Very strong | 0 pF | –1.0 | — | |||||
| 8 | tHI SOUT data valid time (after SCK edge) tSUO | CC | Strong SOUT and SCK drive strength | 0 pF | –1.0 Medium | — 0 pF | ||
| 9 | CC | D SOUT data valid | Very strong | 25 pF | — | 7.0 | ||
| time from SCK(9) D SOUT data hold | Strong SOUT and SCK drive strength | 50 pF SOUT data hold time (after SCK edge) | — | 8.0 | ||||
| 10 | CC | Very strong | 25 pF | –7.7 | — | |||
| tHO | time after SCK(9) | Strong Medium | 50 pF 50 pF | –11.0 –15.0 | — — |
- Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.
3. N is the number of clock cycles added to time between PCS assertion and SCK assertion and is software programmable using DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, N is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
4. tSYS is the period of DSPI_CLKn clock, the input clock to the DSPI module. Maximum frequency is 100 MHz (min tSYS = 10 ns).
5. M is the number of clock cycles added to time between SCK negation and PCS negation and is software programmable using DSPI_CTARx[PASC] and DSPI_CTARx[ASC]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, M is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
- tSDC is only valid for even divide ratios. For odd divide ratios the fundamental duty cycle is not 50:50. For these odd divide ratios cases, the absolute spec number is applied as jitter/uncertainty to the nominal high time and low time.
7. PCSx and PCSS using same pad configuration.
8. Input timing assumes an input slew rate of 1 ns (10 % – 90 %) and uses TTL voltage thresholds.
9. SOUT Data valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value.
Figure 27. DSPI CMOS master mode — classic timing, CPHA = 0
Figure 29. DSPI PCS strobe (PCSS) timing (master mode)
4.17.2.1.2 DSPI CMOS master mode — modified timing
Note: In the following table, all output timing is worst case and includes the mismatching of rise and fall times of the output pads.
| Table 47. DSPI CMOS master modified timing (full duplex and output only) |
|---|
| MTFE = 1, CPHA = 0 or 1 |
| Symbol | Condition | Value(1) | |||||
|---|---|---|---|---|---|---|---|
| # | C | Characteristic | Pad drive(2) SCK drive strength | Load (CL) | Min | ||
| CC | D SCK cycle time | Very strong | 25 pF | 33.0 | |||
| 1 | tSCK | Strong | 50 pF | 80.0 | |||
| Medium SCK and PCS drive strength | 50 pF | 200.0 | |||||
| tCSC | D PCS to SCK delay | Very strong | 25 pF | (N(3) × tSYS(4)) – 16 | |||
| 2 | CC | Strong | 50 pF | (N(3) × tSYS(4)) – 16 | |||
| Medium | 50 pF | (N(3) × tSYS(4)) – 16 | |||||
| tASC | CC | ||||||
| 3 | D After SCK delay | ||||||
| PCS medium and SCK strong | PCS = 0 pF SCK = 50 pF | (M(5) × tSYS(4)) – 35 |
| C Characteristic | Condition | Value(1) | |||||
|---|---|---|---|---|---|---|---|
| # | Symbol | Pad drive(2) SCK drive strength | Load (CL) | Min | |||
| 4 | D SCK duty cycle(6) | Very strong | 0 pF | 1/2tSCK – 2 | |||
| tSDC | CC | Strong | 0 pF | 1/2tSCK – 2 | |||
| Medium | 0 pF PCS strobe timing | 1/2tSCK – 5 | |||||
| 5 | tPCSC CC | D PCSx to PCSS time(7) | PCS and PCSS drive strength | ||||
| Strong | 25 pF | 16.0 | |||||
| 6 | tPASC | CC | |||||
| SIN setup time | SIN setup time to SCK CPHA = 0(8) | SCK drive strength | Strong | ||||
| Very strong | 25 pF | 25 – (P(9) × tSYS(4)) | |||||
| Strong | 50 pF | (9) × tSYS(4)) 31 – (P | |||||
| 7 | tSUI | CC | D | Medium SCK drive strength | 50 pF | 52 – (P(9) × tSYS(4)) | |
| SCK | SIN setup time to | Very strong | |||||
| Medium SCK drive strength | 50 pF SIN hold time | 52.0 | |||||
| SIN hold time from SCK | Very strong | 0 pF | |||||
| CPHA = 0(8) | Strong | 0 pF | (9) × tSYS(3)) –1 + (P | ||||
| 8 | tHI | CC | D | Medium SCK drive strength | 0 pF | –1 + (P(9) × tSYS(3)) | |
| SIN hold time from SCK | Very strong | 0 pF | –1.0 | ||||
| CPHA = 1(8) | Strong | 0 pF | –1.0 | ||||
| Medium |
Table 47. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued)
| Condition | Value(1) | ||||||
|---|---|---|---|---|---|---|---|
| # | Symbol | C | Characteristic | Pad drive(2) SOUT and SCK drive strength | Load (CL) SOUT data valid time (after SCK edge) | Min | |
| SOUT data valid time from SCK | Very strong | 25 pF | — | ||||
| CPHA = 0, (10) | Strong | 50 pF | — | ||||
| Medium | 50 pF | — | |||||
| 9 | tSUO | CC | D | SOUT and SCK drive strength | |||
| SOUT data valid time from SCK CPHA = 1(10) | Very strong | 25 pF | — | ||||
| Strong | 50 pF | — | |||||
| SOUT and SCK drive strength | SOUT data hold time (after SCK edge) | Medium | |||||
| D | |||||||
| CPHA = 0(10) | Strong | ||||||
| Medium | 50 pF | –15.0 + tSYS(4) | |||||
| 10 | tHO | CC | SOUT and SCK drive strength | ||||
| SOUT data hold time after SCK | Very strong | 25 pF | |||||
| CPHA = 1(10) | Strong | 50 pF | –11.0 | ||||
| Medium | 50 pF | –15.0 |
Table 47. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued)
-
All timing values for output signals in this table are measured to 50 % of the output voltage.
-
Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.
- 3. N is the number of clock cycles added to time between PCS assertion and SCK assertion and is software programmable using DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, N is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
- 4. tSYS is the period of DSPI_CLKn clock, the input clock to the DSPI module. Maximum frequency is 100 MHz (min tSYS = 10 ns).
- 5. M is the number of clock cycles added to time between SCK negation and PCS negation and is software programmable using DSPI_CTARx[PASC] and DSPI_CTARx[ASC]. The minimum value is 2 cycles unless TSB mode or Continuous SCK clock mode is selected, in which case, M is automatically set to 0 clock cycles (PCS and SCK are driven by the same edge of DSPI_CLKn).
-
- tSDC is only valid for even divide ratios. For odd divide ratios the fundamental duty cycle is not 50:50. For these odd divide ratios cases, the absolute spec number is applied as jitter/uncertainty to the nominal high time and low time.
- 7. PCSx and PCSS using same pad configuration.
- 8. Input timing assumes an input slew rate of 1 ns (10 % – 90 %) and uses TTL voltage thresholds.
- 9. P is the number of clock cycles added to delay the DSPI input sample point and is software programmable using DSPI_ MCR[SMPL_PT]. The value must be 0, 1 or 2. If the baud rate divide ratio is /2 or /3, this value is automatically set to 1.
10. SOUT Data valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value.
Figure 30. DSPI CMOS master mode — modified timing, CPHA = 0
Figure 31. DSPI CMOS master mode — modified timing, CPHA = 1
Figure 32. DSPI PCS strobe (PCSS) timing (master mode)
4.17.2.2 Slave mode timing
Table 48. DSPI CMOS slave timing — full duplex — normal and modified transfer formats (MTFE = 0/1)
| Symbol | Characteristic | Condition | |||
|---|---|---|---|---|---|
| # | C | Pad Drive | |||
| 1 | tSCK | CC | D | SCK Cycle Time(1) | — |
| 2 | tCSC | SR | D | SS to SCK Delay(1) | — |
| 3 | tASC | SR | D | SCK to SS Delay(1) | — |
| 4 | tSDC | CC | D | SCK Duty Cycle(1) | — |
| Slave Access Time(1) (2) (3) (SS active to SOUT driven) | Very strong | ||||
| 5 | tA | CC | D | Strong | |
| Medium | |||||
| CC | D | Slave SOUT Disable Time(1) (2) (3) (SS inactive to SOUT High Z or invalid) | Very strong | ||
| 6 | tDIS | Strong | |||
| Medium | |||||
| 9 | tSUI | CC | D | Data Setup Time for Inputs(1) | — |
| 10 | tHI | CC | D | Data Hold Time for Inputs(1) | — |
| 11 | tSUO | CC | |||
| D | (after SCK edge) | Strong | |||
| Medium | |||||
| CC | |||||
| 12 | tHO | D | (after SCK edge) | Strong | |
2. All timing values for output signals in this table, are measured to 50 % of the output voltage.
3. All output timing is worst case and includes the mismatching of rise and fall times of the output pads.
Figure 33. DSPI slave mode — modified transfer format timing (MFTE = 0/1) CPHA = 0
4.17.3 Ethernet timing
The Ethernet provides both MII and RMII interfaces. The MII and RMII signals can be configured for either CMOS or TTL signal levels compatible with devices operating at either 5.0 V or 3.3 V. Check the device pinout details to review the packages supporting MII and RMII.
4.17.3.1 MII receive signal timing (RXD[3:0], RX_DV, RX_ER, and RX_CLK)
The receiver functions correctly up to a RX_CLK maximum frequency of 25 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the RX_CLK frequency.
Note: In the following table, all timing specifications are referenced from RX_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V.
| Symbol | C | Characteristic | Value | Unit | ||
|---|---|---|---|---|---|---|
| Min | Max | |||||
| M1 | CC | D RXD[3:0], RX_DV, RX_ER to RX_CLK setup | 5 | — | ns | |
| M2 | CC | D RX_CLK to RXD[3:0], RX_DV, RX_ER hold | 5 | — | ns | |
| M3 | CC | D RX_CLK pulse width high | 35 % | 65 % | RX_CLK period | |
| M4 | CC | D RX_CLK pulse width low | 35 % | 65 % | RX_CLK period |
| Table 49. MII receive signal timing |
|---|
4.17.3.2 MII transmit signal timing (TXD[3:0], TX_EN, TX_ER, TX_CLK)
The transmitter functions correctly up to a TX_CLK maximum frequency of 25 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the TX_CLK frequency.
The transmit outputs (TXD[3:0], TX_EN, TX_ER) can be programmed to transition from either the rising or falling edge of TX_CLK, and the timing is the same in either case. This option allows the use of non-compliant MII PHYs.
Refer to the SPC584Bx 32-bit Power Architecture microcontroller reference manual's Ethernet chapter for details of this option and how to enable it.
Note: In the following table, all timing specifications are referenced from TX_CLK = 1.4 V to the valid output levels, 0.8 V and 2.0 V.
| Symbol | C | Characteristic | Value(1) | Unit | ||
|---|---|---|---|---|---|---|
| Min | Max | |||||
| M5 | CC | D TX_CLK to TXD[3:0], TX_EN, TX_ER invalid | 5 | — | ns | |
| M6 | CC | D TX_CLK to TXD[3:0], TX_EN, TX_ER valid | — | 25 | ns | |
| M7 | CC | D TX_CLK pulse width high | 35 % | 65 % | TX_CLK period | |
| M8 | CC | D TX_CLK pulse width low | 35 % | 65 % | TX_CLK period |
Table 50. MII transmit signal timing
- Output parameters are valid for CL = 25 pF, where CL is the external load to the device. The internal package capacitance is accounted for, and does not need to be subtracted from the 25 pF value
Figure 36. MII transmit signal timing diagram
4.17.3.3 MII async inputs signal timing (CRS and COL)
Table 51. MII async inputs signal timing
| Symbol | C | Value | Unit | |||
|---|---|---|---|---|---|---|
| Characteristic | Min | Max | ||||
| M9 CC | D CRS, COL minimum pulse width | 1.5 | — | TX_CLK period |
Figure 37. MII async inputs timing diagram
4.17.3.4 MII and RMII serial management channel timing (MDIO and MDC)
The Ethernet functions correctly with a maximum MDC frequency of 2.5 MHz.
Figure 38. MII serial management channel timing diagram
4.17.3.5 MII and RMII serial management channel timing (MDIO and MDC)
The Ethernet functions correctly with a maximum MDC frequency of 2.5 MHz.
Note: In the following table, all timing specifications are referenced from MDC = 1.4 V (TTL levels) to the valid input and output levels, 0.8 V and 2.0 V (TTL levels). For 5 V operation, timing is referenced from MDC = 50 % to 2.2 V/3.5 V input and output levels.
| Symbol | C | Characteristic | Value | Unit | ||
|---|---|---|---|---|---|---|
| Min | Max | |||||
| M10 | CC | D MDC falling edge to MDIO output invalid (minimum propagation delay) | 0 | — | ns | |
| M11 | CC | D MDC falling edge to MDIO output valid (maximum propagation delay) | — | 25 | ns | |
| M12 | CC | D MDIO (input) to MDC rising edge setup | 10 | — | ns | |
| M13 | CC | D MDIO (input) to MDC rising edge hold | 0 | — | ns | |
| M14 | CC | D MDC pulse width high | 40 % | 60 % | MDC period | |
| M15 | CC | D MDC pulse width low | 40 % | 60 % | MDC period |
| Table 52. MII serial management channel timing |
|---|
| ------------------------------------------------ |
Note: In the following table, all timing specifications are referenced from MDC = 1.4 V (TTL levels) to the valid input and output levels, 0.8 V and 2.0 V (TTL levels). For 5 V operation, timing is referenced from MDC = 50 % to 2.2 V/3.5 V input and output levels.
| Symbol | C | Characteristic | Value | Unit | ||
|---|---|---|---|---|---|---|
| Min | Max | |||||
| M10 | CC | D MDC falling edge to MDIO output invalid (minimum propagation delay) | 0 | — | ns | |
| M11 | CC | D MDC falling edge to MDIO output valid (maximum propagation delay) | — | 25 | ns | |
| M12 | CC | D MDIO (input) to MDC rising edge setup | 10 | — | ns | |
| M13 | CC | D MDIO (input) to MDC rising edge hold | 0 | — | ns | |
| M14 | CC | D MDC pulse width high | 40 % | 60 % | MDC period | |
| M15 | CC | D MDC pulse width low | 40 % | 60 % | MDC period |
Table 53. RMII serial management channel timing
Figure 39. MII serial management channel timing diagram
4.17.3.6 RMII receive signal timing (RXD[1:0], CRS_DV)
The receiver functions correctly up to a REF_CLK maximum frequency of 50 MHz +1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the RX_CLK frequency, which is half that of the REF_CLK frequency.
Note: In the following table, all timing specifications are referenced from REF_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V.
| Symbol | C | Characteristic | Value | Unit | ||
|---|---|---|---|---|---|---|
| Min | Max | |||||
| R1 | CC | D RXD[1:0], CRS_DV to REF_CLK setup | 4 | — | ns | |
| R2 | CC | D REF_CLK to RXD[1:0], CRS_DV hold | 2 | — | ns | |
| R3 | CC | D REF_CLK pulse width high | 35 % | 65 % | REF_CLK period | |
| R4 | CC | D REF_CLK pulse width low | 35 % | 65 % | REF_CLK period |
Figure 40. RMII receive signal timing diagram
4.17.3.7 RMII transmit signal timing (TXD[1:0], TX_EN)
The transmitter functions correctly up to a REF_CLK maximum frequency of 50 MHz + 1 %. There is no minimum frequency requirement. The system clock frequency must be at least equal to or greater than the TX_CLK frequency, which is half that of the REF_CLK frequency.
The transmit outputs (TXD[1:0], TX_EN) can be programmed to transition from either the rising or falling edge of REF_CLK, and the timing is the same in either case. This option allows the use of non-compliant RMII PHYs.
Note: In the following table, all timing specifications are referenced from REF_CLK = 1.4 V to the valid output levels, 0.8 V and 2.0 V.
RMII transmit signal valid timing specified is considering the rise/fall time of the ref_clk on the pad as 1ns.
| Value | |||||
|---|---|---|---|---|---|
| Symbol | C | Characteristic | Min | Max | |
| R5 | CC | D REF_CLK to TXD[1:0], TX_EN invalid | 2 | — | |
| R6 | CC | D REF_CLK to TXD[1:0], TX_EN valid | — | 14 | |
| R7 | CC | D REF_CLK pulse width high | 35 % | 65 % | |
| R8 | CC | D REF_CLK pulse width low | 35 % | 65 % |
Figure 41. RMII transmit signal timing diagram
4.17.4 CAN timing
The following table describes the CAN timing.
| Symbol | Parameter | Value | |||
|---|---|---|---|---|---|
| C | Condition | Min | |||
| CC | D | CAN controller propagation delay time standard pads | Medium type pads 25 pF load | — | |
| CC | D | Medium type pads 50 pF load | — | ||
| tP(RX:TX) | CC | D | STRONG, VERY STRONG type pads 25 pF load | — | |
| CC | D | STRONG, VERY STRONG type pads 50 pF load | — | ||
| CC | D | CAN controller propagation delay time low power pads | Medium type pads 25 pF load | — | |
| CC | D | Medium type pads 50 pF load | — | ||
| tPLP(RX:TX) | CC | D | STRONG, VERY STRONG type pads 25 pF load | — | |
| CC | D | STRONG, VERY STRONG type pads 50 pF load | — |
Table 56. CAN timing
4.17.5 UART timing
UART channel frequency support is shown in the following table.
| LINFlexD clock frequency LIN_CLK (MHz) | Oversampling rate | Voting scheme | Max usable frequency (Mbaud) |
|---|---|---|---|
| 16 | 3:1 majority voting | 5 | |
| 8 | 10 | ||
| 80 | 6 | Limited voting on one | 13.33 |
| 5 | sample with configurable | 16 | |
| 4 | sampling point | 20 | |
| 16 | 3:1 majority voting | 6.25 | |
| 8 | 12.5 | ||
| 100 | 6 | Limited voting on one | 16.67 |
| 5 | sample with configurable | 20 | |
| 4 | sampling point | 25 |
Table 57. UART frequency support
4.17.6 I2C timing
The I2C AC timing specifications are provided in the following tables.
Note: In the following table, I2C input timing is valid for Automotive and TTL inputs levels, hysteresis enabled, and an input edge rate no slower than 1 ns (10 % – 90 %).
| No. Symbol | C | Parameter | Value | Unit | |||
|---|---|---|---|---|---|---|---|
| Min | Max | ||||||
| 1 | — | CC | D Start condition hold time | 2 | — | PER_CLK Cycle(1) | |
| 2 | — | CC | D Clock low time | 8 | — | PER_CLK Cycle | |
| 3 | — | CC | D Bus free time between Start and Stop condition | 4.7 | — | μs | |
| 4 | — | CC | D Data hold time | 0.0 | — | ns | |
| 5 | — | CC | D Clock high time | 4 | — | PER_CLK Cycle | |
| 6 | — | CC | D Data setup time | 0.0 | — | ns | |
| 7 | — | CC | D Start condition setup time (for repeated start condition only) | 2 | — | PER_CLK Cycle | |
| 8 | — | CC | D Stop condition setup time | 2 | — | PER_CLK Cycle |
| Table 58. I2C input timing specifications – SCL and SDA | ||
|---|---|---|
| -- | -- | --------------------------------------------------------- |
- PER_CLK is the SoC peripheral clock, which drives the I2C BIU and module clock inputs. See the Clocking chapter in the device reference manual for more detail.
Note: In the following table:
• All output timing is worst case and includes the mismatching of rise and fall times of the output pads.
• Output parameters are valid for CL = 25 pF, where CL is the external load to the device (lumped). The internal package capacitance is accounted for, and does not need to be subtracted from the 25 pF value.
• Timing is guaranteed to same drive capabilities for all signals, mixing of pad drives may reduce operating speeds and may cause incorrect operation.
• Programming the IBFD register (I2C bus Frequency Divider) with the maximum frequency results in the minimum output timings listed. The I2C interface is designed to scale the data transition time, moving it to the middle of the SCL low period. The actual position is affected by the pre-scale and division values programmed in the IBC field of the IBFD register.
| No. Symbol | C | Value | |||
|---|---|---|---|---|---|
| Parameter | Min | ||||
| 1 | — | CC | D | Start condition hold time | 6 |
| 2 | — | CC | D | Clock low time | 10 |
| 3 | — | CC | D | Bus free time between Start and Stop condition | 4.7 |
| 4 | — | CC | D | Data hold time | 7 |
| 5 | — | CC | D | Clock high time | 10 |
| 6 | — | CC | D | Data setup time | 2 |
| 7 | — | CC | D | Start condition setup time (for repeated start condition only) | 20 |
| 8 | — | CC | D | Stop condition setup time | 10 |
Table 59. I2C output timing specifications — SCL and SDA
- PER_CLK is the SoC peripheral clock, which drives the I2C BIU and module clock inputs. See the Clocking chapter in the device reference manual for more detail.
Figure 42. I2C input/output timing
DS11701 Rev 4 101/142
Absolute Maximum Ratings
Table 4 describes the maximum ratings for the device. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Stress beyond the listed maxima, even momentarily, may affect device reliability or cause permanent damage to the device.
| Symbol | C | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| VDD_LV | SR | D | Core voltage operating life range(1) | — | –0.3 | — | 1.4 |
| VDD_HV_IO_MAIN VDD_HV_IO_ETH VDD_HV_OSC VDD_HV_FLA | SR | D | I/O supply voltage(2) | — | –0.3 | — | 6.0 |
| VSS_HV_ADV | SR | D | ADC ground<br |
| Table 4. Absolute maximum ratings |
|---|
| ----------------------------------- |
| Symbol | Parameter | Value | |||
|---|---|---|---|---|---|
| C | Conditions | Min | |||
| TSTG | SR | T | Maximum non operating Storage temperature range | — | –55 |
| TPAS | SR | C | Maximum nonoperating temperature during passive lifetime | — | –55 |
| TSTORAGE | SR | — | Maximum storage time, assembled part programmed in ECU | No supply; storage temperature in range –40 °C to 60 °C | — |
| TSDR | SR | T | Maximum solder temperature Pb free packaged(8) | — | — |
| MSL | SR | T | Moisture sensitivity level(9) | — | — |
| TXRAY dose | SR | T | Maximum cumulated XRAY dose | Typical range for X-rays source during inspection:80 ÷ 130 KV; 20 ÷ 50 A | — |
| Table 4. Absolute maximum ratings |
|---|
2. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions.
-
- The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal calculations.
-
- Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
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- This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum limits to the transition time.
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- The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications.
-
- 175 °C are allowed for limited time. Mission profile with passive lifetime temperature >150 °C have to be evaluated by ST to confirm that are granted by product qualification.
-
- Solder profile per IPC/JEDEC J-STD-020D.
- Moisture sensitivity per JDEC test method A112.
Thermal Information
The following tables describe the thermal characteristics of the device. The parameters in this chapter have been evaluated by considering the device consumption configuration reported in the Section 4.7: Device consumption.
5.5.1 eTQFP64
| Symbol | C | Parameter(1) | Conditions | Value | Unit | |
|---|---|---|---|---|---|---|
| RJA | CC | D | Junction-to-Ambient, Natural Convection(2) | Four layer board (2s2p) | 30.8 | °C/W |
| RJMA | CC | D | Junction-to-Moving-Air, Ambient(2) | at 200 ft./min., four layer board (2s2p) | 24.4 | °C/W |
| RJB | CC | D | Junction-to-board(3) | — | 12.1 | °C/W |
| RJCtop | CC | D | Junction-to-case top(4) | — | 15.2 | °C/W |
| RJCbottom | CC | D | Junction-to-case bottom(5) | — | 4.5 | °C/W |
| JT | CC | D | Junction-to-package top(6) | Natural convection | 3.7 | °C/W |
Table 69. Thermal characteristics for 64 exposed pad eTQFP package
- Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
- Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package.
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- Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).
-
- Thermal resistance between the die and the exposed pad ground on the bottom of the package based on simulation without any interface resistance.
-
- Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| SPC584Bx | Not explicitly stated in provided text, but 'SPC' prefix is commonly STMicroelectronics | — |
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