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LFE5U

FPGA

The LFE5U is a fpga from Lattice Semiconductor. View the full LFE5U datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Lattice Semiconductor

Overview

Part: ECP5 and ECP5-5G Family — Lattice Semiconductor

Type: FPGA

Description: Lattice ECP5 and ECP5-5G family of low power, small form factor, and low cost FPGAs featuring high-performance SERDES up to 5 Gbps, flexible I/O, high-performance DSP blocks, and embedded block RAM.

Operating Conditions:

  • Supply voltage: 1.14–3.465 V
  • Operating temperature: -40 to +125 °C (Junction)
  • SERDES data rate: Up to 5.0 Gbps

Absolute Maximum Ratings:

  • Max supply voltage (VCC): 1.32 V
  • Max supply voltage (VCCAUX): 3.6 V
  • Max supply voltage (VCCIO): 3.9 V
  • Max junction temperature: +150 °C
  • Max storage temperature: +150 °C

Key Specs:

  • Core Supply Voltage (VCC): 1.2 V (nominal)
  • Auxiliary Supply Voltage (VCCAUX): 2.5 V or 3.3 V (nominal)
  • I/O Supply Voltage (VCCIO): 1.2 V to 3.3 V (nominal)
  • SERDES Data Rate: Up to 5.0 Gbps (ECP5-5G)
  • Max I/O Buffer Speed (LVCMOS33): 200 MHz
  • Max I/O Buffer Speed (LVDS25): 1.25 Gbps
  • sysMEM Embedded Block RAM: Up to 40 Kbits per block
  • Static VCC Current (LFE5-45F, Tj=25°C): 10 mA (typical)

Features:

  • Low power, small form factor, low cost FPGAs
  • High-performance SERDES: Up to 5 Gbps per channel
  • Flexible I/O: Dedicated DDR memory support, on-chip termination, hot socketing
  • High-performance DSP blocks: Dedicated multiply, accumulate, and sum blocks
  • Enhanced sysCLOCK PLLs: Flexible clocking
  • sysMEM Embedded Block RAM
  • Enhanced configuration options: TransFR™ reconfigurability, single event upset (SEU) support
  • On-chip oscillator
  • IEEE 1149.1-compliant Boundary Scan Testability

Features

  • Higher Logic Density for Increased System Integration

  • 12K to 84K LUTs

  • 197 to 365 user programmable I/O

  • Embedded SERDES

  • 270 Mb/s, up to 3.2 Gb/s, SERDES interface (ECP5)

  • 270 Mb/s, up to 5.0 Gb/s, SERDES interface (ECP5-5G)

  • Supports eDP in RDR (1.62 Gb/s) and HDR

  • (2.7 Gb/s)

  • Up to four channels per device: PCI Express, Ethernet (1GbE, SGMII, XAUI), and CPRI

  • sysDSP™

  • Fully cascadable slice architecture

  • 12 to 160 slices for high performance multiply and accumulate

  • Powerful 54-bit ALU operations

  • Time Division Multiplexing MAC Sharing

  • Rounding and truncation

  • Each slice supports

  • Half 36 x 36, two 18 x 18 or four 9 x 9 multipliers

  • Advanced 18 x 36 MAC and 18 x 18 Multiply-Multiply-Accumulate (MMAC) operations

  • Flexible Memory Resources

  • Up to 3.744 Mb sysMEM™ Embedded Block

  • RAM (EBR)

  • 194K to 669K bits distributed RAM

  • sysCLOCK Analog PLLs and DLLs

  • Four DLLs and four PLLs in LFE5-45 and LFE5-85; two DLLs and two PLLs in LFE5-25 and LFE5-12

  • Pre-Engineered Source Synchronous I/O

  • DDR registers in I/O cells

  • Dedicated read/write levelling functionality

  • Dedicated gearing logic

  • Source synchronous standards support

  • ADC/DAC, 7:1 LVDS, XGMII

  • High Speed ADC/DAC devices

  • Dedicated DDR2/DDR3 and LPDDR2/LPDDR3 memory support with DQS logic, up to 800 Mb/s data-rate

  • Programmable sysI/O™ Buffer Supports Wide Range of Interfaces

  • On-chip termination

  • LVTTL and LVCMOS 33/25/18/15/12

  • SSTL 18/15 I, II

  • HSUL12

  • LVDS, Bus-LVDS, LVPECL, RSDS, MLVDS

  • subLVDS and SLVS, SoftIP MIPI D-PHY receiver/transmitter interfaces

Electrical Characteristics

Over Recommended Operating Conditions

Table 3.7. DC Electrical Characteristics

SymbolParameterConditionMinTypMaxUnit
I IL , I IH 1, 4Input or I/O Low Leakage0 V IN V CCIO--10μA
I IH 1, 3Input or I/O High LeakageV CCIO < V IN V IH(MAX)--100μA
I PUI/O Active Pull-up Current, sustaining logic HIGH state0.7 V CCIO V IN V CCIO-30--μA
I PUI/O Active Pull-up Current, pulling down from logic HIGH state0 V IN 0.7 V CCIO---150μA
I PDI/O Active Pull-down Current, sustaining logic LOW state0 V IN V IL (MAX)30--μA
I PDI/O Active Pull-down Current, pulling up from logic LOW state0 V IN V CCIO--150μA
C1I/O Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = 1.2 V, V IO = 0 to V IH(MAX)-58pf
C2Dedicated Input Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = 1.2 V, V IO = 0 to V IH(MAX)-57pf
V HYSTHysteresis for Single-Ended InputsV CCIO = 3.3 V-300-mV
V HYSTV CCIO = 2.5 V-250-mV
  1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tristated. It is not measured with the output driver active. Bus maintenance circuits are disabled.
  2. TA 25 o C, f = 1.0 MHz.
  3. Applicable to general purpose I/O in top and bottom banks.
  4. When used as VREF, maximum leakage= 25 μA.

Absolute Maximum Ratings

SymbolParameterMinMaxUnit
V CCSupply Voltage-0.51.32V
V CCASupply Voltage-0.51.32V
V CCAUX , V CCAUXASupply Voltage-0.52.75V
V CCIOSupply Voltage-0.53.63V
-Input or I/O Transient Voltage Applied-0.53.63V
V CCHRX , V CCHTXSERDES RX/TX Buffer Supply Voltages-0.51.32V
-Voltage Applied on SERDES Pins-0.51.8V
T AStorage Temperature (Ambient)-65150°C
T JJunction Temperature-125°C
  1. Stress above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
  2. Compliance with the Lattice Thermal Management document is required.
  3. All voltages referenced to GND.

Recommended Operating Conditions

Table 3.2. Recommended Operating Conditions

SymbolParameterMinMaxUnit
V CC 2Core Supply VoltageECP51.0451.155V
V CC 2Core Supply VoltageECP5-5G1.141.26V
V CCAUX 2, 4Auxiliary Supply Voltage-2.3752.625V
V CCIO 2, 3I/O Driver Supply Voltage-1.143.465V
V REF 1Input Reference Voltage-0.51V
t JCOMJunction Temperature, Commercial Operation-085°C
t JINDJunction Temperature, Industrial Operation--40100°C
SERDES External Power Supply 5SERDES External Power Supply 5
V CCASERDES Analog Power SupplyECP5UM1.0451.155V
V CCASERDES Analog Power SupplyECP5-5G1.1641.236V
V CCAUXASERDES Auxiliary Supply Voltage-2.3742.625V
V CCHRX 6SERDES Input Buffer Power SupplyECP5UM0.31.155V
V CCHRX 6SERDES Input Buffer Power SupplyECP5-5G0.31.26V
V CCHTXSERDES Output Buffer Power SupplyECP5UM1.0451.155V
V CCHTXSERDES Output Buffer Power SupplyECP5-5G1.141.26V
  1. For correct operation, all supplies except V REF must be held in their valid operation range. This is true independent of feature usage.
  2. All supplies with same voltage, except SERDES Power Supplies, should be connected together.
  3. See recommended voltages by I/O standard in Table 3.4.
  4. VCCAUX ramp rate must not exceed 30 mV/μs during power-up when transitioning between 0 V and 3 V.
  5. Refer to ECP5 and ECP5-5G SERDES/PCS Usage Guide (FPGA-TN-02206) for information on board considerations for SERDES power supplies.
  6. VCCHRX is used for Rx termination. It can be biased to Vcm if external AC coupling is used. This voltage needs to meet all the HDin input voltage level requirements specified in the Rx section of this Data Sheet.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
LFE5U-12Lattice Semiconductor
LFE5U-12FLattice Semiconductor
LFE5U-12F/LFE5U-25FLattice Semiconductor
LFE5U-25Lattice Semiconductor
LFE5U-25FLattice Semiconductor
LFE5U-45Lattice Semiconductor
LFE5U-45FLattice Semiconductor
LFE5U-85Lattice Semiconductor
LFE5U-85FLattice Semiconductor
LFE5UMLattice Semiconductor
LFE5UM-25Lattice Semiconductor
LFE5UM-25FLattice Semiconductor
LFE5UM-45Lattice Semiconductor
LFE5UM-45FLattice Semiconductor
LFE5UM-85Lattice Semiconductor
LFE5UM-85FLattice Semiconductor
LFE5UM5GLattice Semiconductor
LFE5UM5G-25Lattice Semiconductor
LFE5UM5G-25FLattice Semiconductor
LFE5UM5G-45Lattice Semiconductor
LFE5UM5G-45FLattice Semiconductor
LFE5UM5G-85Lattice Semiconductor
LFE5UM5G-85FLattice Semiconductor
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