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HoJLR1206-1W-1mR-1%-75ppm

The HoJLR1206-1W-1mR-1%-75ppm is an electronic component from Milliohm. View the full HoJLR1206-1W-1mR-1%-75ppm datasheet below including specifications and datasheet sections.

Manufacturer

Milliohm

Category

Chip SMD Resistors

Overview

Part: STTA1206D/DI/G — STMicroelectronics

Type: TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

Description: 12 A average forward current, 600 V repetitive peak reverse voltage, 28 ns typical reverse recovery time, and 1.5 V maximum forward voltage.

Operating Conditions:

  • Max operating junction temperature: 150 °C
  • Storage temperature: -65 to 150 °C
  • Repetitive peak reverse voltage: 600 V

Absolute Maximum Ratings:

  • Max reverse voltage: 600 V (V RRM)
  • Max RMS forward current: 30 A (TO-220AC / D2PAK)
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Repetitive peak reverse voltage (V RRM): 600 V
  • Average forward current (I F(AV)): 12 A
  • RMS forward current (I F(RMS)): 30 A (TO-220AC / D2PAK)
  • Forward voltage drop (V F): 1.5 V (max, Tj = 125°C, I F =12A)
  • Reverse recovery time (t rr): 28 ns (typ, Tj = 25°C, I F = 0.5 A, I R = 1A, Irr = 0.25A, I F = 1 A dI F /dt =-50A/μs V R =30V)
  • Reverse leakage current (I R): 5 mA (max, V R =0.8 x V RRM, Tj = 125°C)
  • Dynamic resistance (rd): 29 mΩ
  • Junction to case thermal resistance (R th(j-c)): 1.9 °C/W (TO-220AC / D 2 PAK)

Features:

  • Specific to 'freewheel mode' operations: freewheel or booster diode.
  • Ultra-fast and soft recovery.
  • Very low overall power losses in both the diode and the companion transistor.
  • High frequency operations.
  • Insulated package: TO-220AC (Electrical insulation: 2500VRMS, Capacitance < 7 pF).

Applications:

  • Motor control freewheel applications.
  • Booster diode applications in power factor control circuitries.
  • Use on 240V domestic mains.

Package:

  • TO-220AC
  • TO-220AC Ins.
  • D2PAK

Thermal Information

SymbolParameterTest conditionsTest conditionsValueUnit
R th(j-c)Junction to case thermal resistanceTO-220AC / D 2 PAK TO-220AC ins.1.9 3.0°C/W
P 1Conduction power dissipation I F(AV) = 12A d =0.5TO-220AC / D 2 PAK TO-220AC ins.Tc= 108°C Tc= 84°C22W
P maxTotal power dissipation Pmax = P1 + P3 (P3 = 10% P1)TO-220AC /D 2 PAK TO-220AC ins.Tc= 104°C Tc= 78°C24W
SymbolParameterTest conditionsTest conditionsMinTypMaxUnit
V F *Forward voltage dropI F =12ATj = 25°C Tj = 125°C1.251.75 1.5V V
I R **Reverse leakage currentV R =0.8 x V RRMTj = 25°C Tj = 125°C2100 5m A mA
V toThreshold voltageIp < 3.I AVTj = 125°C1.15V
rdDynamic resistance29m W
SymbolParameterTest conditionsMinTypMaxUnit
t rrReverse recovery timeTj = 25°C I F = 0.5 A I R = 1A Irr = 0.25A I F = 1 A dI F /dt =-50A/ m s V R =30V2855ns
I RMMaximum reverse recovery currentTj = 125°C VR = 400V I F =12A dI F /dt = -96 A/ m s dI F /dt = -500 A/ m s167.5A
S factorSoftness factorTj = 125°C V R = 400V I F =12A dI F /dt = -500 A/ m s0.45-

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
STTA1206DSTMicroelectronics
STTA1206DISTMicroelectronics
STTA1206GSTMicroelectronics
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