HMC8205BF10

0.3 GHz to 6 GHz, 35 W, GaN Power Amplifier

Manufacturer

Analog Devices Inc.

Overview

Part: HMC8205BF10 from Analog Devices

Type: GaN Power Amplifier

Key Specs:

Saturated Output Power (PSAT): 46 dBm
Output Power: 35 W
Power Added Efficiency (PAE): 38%
Instantaneous Bandwidth: 0.3 GHz to 6 GHz
Power Gain for PSAT: 20 dB
Supply Voltage (VDD): 50 V
Total Supply Current (IDQ): 1300 mA

Features:

Gallium Nitride (GaN) broadband power amplifier
No external matching required to achieve full band operation
No external inductor required to bias the amplifier
Integrated dc blocking capacitors for RFIN and RFOUT pins
Ideal for pulsed or continuous wave (CW) applications

Applications:

Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment
General-purpose amplification

Package:

10-lead LDCC package

Features

High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package

Applications

Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment

Pin Configuration

Figure 2. Pin Configuration

Table 6. Pin Function Descriptions

Pin No.	Mnemonic	Description
1, 2	VDD2	Drain Bias for Second Stage of Amplifier. See Figure 3 for the VDD2 interface schematic.
3	RFIN	RF Input (RFIN). It is ac-coupled and internally matched to 50 Ω. See Figure 4 for the RFIN interface schematic.
4, 5, 9, 10	NC	No Internal Connection.
6	VDD1	Drain Bias for First Stage of Amplifier. See Figure 5 for the VDD1 interface schematic.
7	VGG1	Gate Control for Second Stage of Amplifier. See Figure 6 for the VGG1 interface schematic.
8	RFOUT	RF Output (RFOUT). It is ac-coupled and internally matched to 50 Ω. See Figure 7 for the RFOUT interface schematic.
Package Base	GND	Package Base. The package base must be connected to RF/dc ground. See Figure 8 for the GND Interface schematic.

INTERFACE SCHEMATICS

Figure 3. VDD2 Interface

Figure 4. RFIN Interface

Figure 5. VDD1 Interface

HMC8205BF10 Data Sheet

Electrical Characteristics

TA = 25°C, VDD = 50 V, IDQ = 1300 mA, frequency range = 0.3 GHz to 3 GHz.

Table 1.

Parameter	Symbol	Min	Typ	Max	Unit
FREQUENCY RANGE		0.3		3	GHz
GAIN
Small Signal Gain		23	26		dB
Gain Flatness			±2		dB
RETURN LOSS
Input			13		dB
Output			12		dB
POWER
4 dB Compressed Power	P4dB	39	45		dBm
Saturated Output Power	PSAT		46		dBm
Power Gain for PSAT			20		dB
Power Added Efficiency	PAE		38		%
TOTAL SUPPLY CURRENT	IDQ		1300		mA
SUPPLY VOLTAGE	VDD	28	50	55	V

Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
4 dB Compressed Power
Saturated Output Power
Power Gain for PSAT
Power Added Efficiency
TOTAL SUPPLY CURRENT
SUPPLY VOLTAGE

Absolute Maximum Ratings

This device is not surface mountable and is not intended nor suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above 150°C.

Table 3.

Parameter	Rating
Drain Bias Voltage (VDD)	60 V dc
Gate Bias Voltage (VGG1)	-8 V to 0 V dc
Radio Frequency (RF) Input Power (RFIN)	35 dBm
Continuous Power Dissipation (PDISS) (T = 85°C) (Derate 636 mW/°C Above 85°C)	89.4 W
Storage Temperature Range	-55°C to +150°C
Operating Temperature Range	-40°C to +85°C
Human Body Model (HBM) Electrostatic Discharge (ESD) Sensitivity	375 V

Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.

THERMAL RESISTANCE

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.

Table 4. Thermal Resistance

Package Type	θJC	Unit
EJ-10-1	1.57	°C/W

Table 5. Reliability Information

Parameter	Temperature (°C)
Junction Temperature to Maintain 1,000,000 Hour Mean Time to Failure (MTTF)	225
Nominal Junction Temperature (T = 85°C, VDD = 50 V)	187

ESD CAUTION

Thermal Information

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
HMC8205	Analog Devices Inc.	—
HMC8205FB10	Analog Devices Inc.	—

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