HMC8205BF10

Part: HMC8205BF10 — Analog Devices

Type: Gallium Nitride (GaN) Broadband Power Amplifier

Description: A 0.3 GHz to 6 GHz, 35 W gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm with 38% power added efficiency (PAE).

Operating Conditions:

• Supply voltage: 28–55 V
• Operating temperature: -40°C to +85°C
• Frequency range: 0.3 GHz to 6 GHz
• Total supply current (IDQ): 1300 mA

Absolute Maximum Ratings:

• Max drain bias voltage (VDD): 60V dc
• Max RF input power (RFIN): 35 dBm
• Max continuous power dissipation (PDISS): 89.4 W (at T=85°C)
• Max storage temperature: -55°C to +150°C

Key Specs:

• Frequency Range: 0.3 GHz to 6 GHz
• Saturated Output Power (PSAT): 46 dBm (Typ)
• Power Added Efficiency (PAE): 38% (Typ, 0.3-3 GHz)
• Small Signal Gain: 26–28 dB (Typ)
• Power Gain for PSAT: 19–20 dB (Typ)
• Input Return Loss: 10–13 dB (Typ)
• Output Return Loss: 7–12 dB (Typ)
• Total Supply Current (IDQ): 1300 mA (Typ)

Features:

• High PSAT: 46 dBm
• High power gain: 20 dB
• High PAE: 38%
• Instantaneous bandwidth: 0.3 GHz to 6 GHz
• No external matching required
• No external inductor required to bias
• Integrated dc blocking capacitors for RFIN and RFOUT

Applications:

• Military jammers
• Commercial and military radar
• Power amplifier stage for wireless infrastructure
• Test and measurement equipment
• Pulsed or continuous wave (CW) applications
• General-purpose amplification

Package:

• 10-lead Ceramic Leaded Chip Carrier [LDCC] (EJ-10-1)

High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package

Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment

Figure 2. Pin Configuration

TA = 25°C, VDD = 50 V, IDQ = 1300 mA, frequency range = 0.3 GHz to 3 GHz.

This device is not surface mountable and is not intended nor suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above 150°C.

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.

Figure 39. Typical Application Circuit

Unless otherwise noted, all measurements and data shown in this data sheet were taken using the evaluation PCB shown in Figure 39. The bias conditions, shown in Table 1 and Table 2, are the operating points recommended to optimize the overall performance of the HMC8205BF10.

Unless otherwise noted, the data shown in the Specifications section was taken using the recommended bias conditions. Operation of the HMC8205BF10 at other bias conditions can provide performance that differs from what is shown in this data sheet. Some applications can benefit from the reduced power consumption afforded by the use of lower drain voltages and/or lower drain currents. To understand the trade-offs between power consumption and performance, see Theory of Operation section.

The evaluation printed circuit board (PCB) provides the HMC8205BF10 (see Figure 39), allowing easy operation using standard dc power supplies and 50 Ω RF test equipment.