HMC8205
0.3 GHz to 6 GHz, 35 W, GaN Power Amplifier
Manufacturer
Analog Devices Inc.
Category
RF and Wireless
Overview
Part: HMC8205BF10 from Analog Devices
Type: GaN Power Amplifier
Key Specs:
- Saturated Output Power (PSAT): 46 dBm
- Output Power: 35 W
- Power Added Efficiency (PAE): 38%
- Instantaneous Bandwidth: 0.3 GHz to 6 GHz
- Power Gain for PSAT: 20 dB
- Supply Voltage (VDD): 50 V
- Total Supply Current (IDQ): 1300 mA
Features:
- Gallium Nitride (GaN) broadband power amplifier
- No external matching required to achieve full band operation
- No external inductor required to bias the amplifier
- Integrated dc blocking capacitors for RFIN and RFOUT pins
- Ideal for pulsed or continuous wave (CW) applications
Applications:
- Military jammers
- Commercial and military radar
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
- General-purpose amplification
Package:
- 10-lead LDCC package
Features
High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package
Applications
Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment
Pin Configuration
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
| Pin No. | Mnemonic | Description |
|---|---|---|
| 1, 2 | VDD2 | Drain Bias for Second Stage of Amplifier. See Figure 3 for the VDD2 interface schematic. |
| 3 | RFIN | RF Input (RFIN). It is ac-coupled and internally matched to 50 Ω. See Figure 4 for the RFIN interface schematic. |
| 4, 5, 9, 10 | NC | No Internal Connection. |
| 6 | VDD1 | Drain Bias for First Stage of Amplifier. See Figure 5 for the VDD1 interface schematic. |
| 7 | VGG1 | Gate Control for Second Stage of Amplifier. See Figure 6 for the VGG1 interface schematic. |
| 8 | RFOUT | RF Output (RFOUT). It is ac-coupled and internally matched to 50 Ω. See Figure 7 for the RFOUT interface schematic. |
| Package Base | GND | Package Base. The package base must be connected to RF/dc ground. See Figure 8 for the GND Interface schematic. |
INTERFACE SCHEMATICS
Figure 3. VDD2 Interface
Figure 4. RFIN Interface
Figure 5. VDD1 Interface
HMC8205BF10 Data Sheet
Electrical Characteristics
TA = 25°C, VDD = 50 V, IDQ = 1300 mA, frequency range = 0.3 GHz to 3 GHz.
Table 1.
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions/Comments |
|---|---|---|---|---|---|---|
| FREQUENCY RANGE | 0.3 | 3 | GHz | |||
| GAIN | ||||||
| Small Signal Gain | 23 | 26 | dB | |||
| Gain Flatness | ±2 | dB | ||||
| RETURN LOSS | ||||||
| Input | 13 | dB | ||||
| Output | 12 | dB | ||||
| POWER | ||||||
| 4 dB Compressed Power | P4dB | 39 | 45 | dBm | ||
| Saturated Output Power | PSAT | 46 | dBm | |||
| Power Gain for PSAT | 20 | dB | ||||
| Power Added Efficiency | PAE | 38 | % | |||
| TOTAL SUPPLY CURRENT | IDQ | 1300 | mA | |||
| SUPPLY VOLTAGE | VDD | 28 | 50 | 55 | V |
- Parameter
- FREQUENCY RANGE
- GAIN
- Small Signal Gain
- Gain Flatness
- RETURN LOSS
- Input
- Output
- POWER
- 4 dB Compressed Power
- Saturated Output Power
- Power Gain for PSAT
- Power Added Efficiency
- TOTAL SUPPLY CURRENT
- SUPPLY VOLTAGE
Absolute Maximum Ratings
This device is not surface mountable and is not intended nor suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above 150°C.
Table 3.
| Parameter | Rating |
|---|---|
| Drain Bias Voltage (VDD) | 60 V dc |
| Gate Bias Voltage (VGG1) | -8 V to 0 V dc |
| Radio Frequency (RF) Input Power (RFIN) | 35 dBm |
| Continuous Power Dissipation (PDISS) (T = 85°C) (Derate 636 mW/°C Above 85°C) | 89.4 W |
| Storage Temperature Range | -55°C to +150°C |
| Operating Temperature Range | -40°C to +85°C |
| Human Body Model (HBM) Electrostatic Discharge (ESD) Sensitivity | 375 V |
Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.
Table 4. Thermal Resistance
| Package Type | θJC | Unit |
|---|---|---|
| EJ-10-1 | 1.57 | °C/W |
Table 5. Reliability Information
| Parameter | Temperature (°C) |
|---|---|
| Junction Temperature to Maintain 1,000,000 Hour Mean Time to Failure (MTTF) | 225 |
| Nominal Junction Temperature (T = 85°C, VDD = 50 V) | 187 |
ESD CAUTION
Thermal Information
Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| HMC8205BF10 | Analog Devices Inc. | 10-CLCC |
| HMC8205FB10 | Analog Devices Inc. | — |
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