FRC1206F1202TS
The FRC1206F1202TS is an electronic component from FOJAN. View the full FRC1206F1202TS datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
FOJAN
Category
Chip SMD Resistors
Overview
Part: FQP12N60C / FQPF12N60C — Fairchild Semiconductor
Type: N-Channel MOSFET
Description: N-Channel enhancement mode power field effect transistor with 600V Drain-Source Voltage, 12A continuous drain current, and 0.65 Ω on-resistance, featuring low gate charge and fast switching.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max continuous current: 12 A (Drain Current, T C = 25 ° C)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 600 V (V GS = 0V, I D = 250 μ A)
- Zero Gate Voltage Drain Current (I DSS): 1 μ A (V DS = 600V, V GS = 0V)
- Gate Threshold Voltage (V GS(th)): 2.0 V min, 4.0 V max (V DS = V GS , I D = 250 μ A)
- Static Drain-Source On-Resistance (R DS(on)): 0.65 Ω max (V GS = 10V, I D = 6A)
- Total Gate Charge (Q g): 63 nC max (V DS = 400V, I D = 12A, V GS = 10V)
- Input Capacitance (C iss): 2290 pF max (V DS = 25V, V GS = 0V, f = 1.0MHz)
- Turn-On Delay Time (t d(on)): 70 ns max (V DD = 300V, I D = 12A, R G = 25 Ω)
- Peak Diode Recovery dv/dt: 4.5 V/ns
Features:
- 12A, 600V, R DS(on) = 0.65 Ω @V GS = 10 V
- Low gate charge (typical 48 nC)
- Low Crss (typical 21pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Applications:
- High efficient switched mode power supplies
- Active power factor correction
- Electronic lamp ballast based on half bridge topology
Package:
- TO-220
- TO-220F
Features
- 12A, 600V, R DS(on) = 0.65 Ω @V GS = 10 V
- Low gate charge ( typical 48 nC)
- Low Crss ( typical 21pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Electrical Characteristics
| Symbol | Parameter | Conditions | Min Typ | Max | Units | |
|---|---|---|---|---|---|---|
| Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0V, I D = 250 μ A, T J = 25 ° | C | 600 -- | -- | V |
| ∆ BV DSS / ∆ T J | Breakdown Voltage Temperature Coefficient | I D = 250 μ A, Referenced to 25 ° C | -- 0.5 | -- | V/ ° C | |
| I DSS | Zero Gate Voltage Drain Current | V DS = 600V, V GS = 0V V DS = 480V, T C = 125 ° C | -- -- -- -- | 1 10 | μ A μ A | |
| I GSSF | Gate-Body Leakage Current, Forward | V GS = 30V, V DS = 0V | -- -- | 100 | nA | |
| I GSSR | Gate-Body Leakage Current, Reverse | V GS = -30V, V DS = 0V | -- -- | -100 | nA | |
| On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 250 μ A | 2.0 -- | 4.0 | V | |
| R DS(on) | Static Drain-Source On-Resistance | V GS = 10V, I D = 6A | -- 0.53 | 0.65 | Ω | |
| g FS | Forward Transconductance | V DS = 40V, I D = 6A | (Note 4) | -- 13 | -- | S |
| Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics |
| C iss | Input Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 1760 | 2290 | pF | |
| C oss | Output Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 182 | 235 | pF | |
| C rss | Reverse Transfer Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 21 | 28 | pF | |
| Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics |
| t d(on) | Turn-On Delay Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 30 | 70 | ns | |
| t r | Turn-On Rise Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 85 | 180 | ns | |
| t d(off) | Turn-Off Delay Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 140 | 280 | ns | |
| t f | Turn-Off Fall Time | V DD = 300V, I D = 12A R G = 25 Ω | (Note 4, 5) | -- 90 | 190 | ns |
| Q g | Total Gate Charge | V DS = 400V, I D = 12A V GS = 10V | -- 48 | 63 | nC | |
| Q gs | Gate-Source Charge | V DS = 400V, I D = 12A V GS = 10V | -- 8.5 | -- | nC | |
| Q gd | Gate-Drain Charge | V DS = 400V, I D = 12A V GS = 10V | (Note 4, 5) | -- 21 | -- | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings |
| I S | Maximum Continuous Drain-Source Diode Forward Current | Maximum Continuous Drain-Source Diode Forward Current | -- -- | 12 | A | |
| I SM | Maximum Pulsed Drain-Source Diode Forward Current | Maximum Pulsed Drain-Source Diode Forward Current | -- -- | 48 | A | |
| V SD | Drain-Source Diode Forward Voltage | V GS = 0V, I S = 12A | -- -- | 1.4 | V | |
| t rr | Reverse Recovery Time | V GS = 0V, I S = 12A dI /dt =100A/ μ s | -- 420 | -- | ns | |
| Q rr | Reverse Recovery Charge | F | (Note 4) | -- 4.9 | -- | μ C |
Absolute Maximum Ratings
| Symbol | Parameter | Parameter | Parameter | FQP12N60C | FQPF12N60C | Unit |
|---|---|---|---|---|---|---|
| V DSS | Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | 600 | 600 | V |
| I D | Drain Current | - Continuous (T C = 25 ° C) - Continuous (T C = 100 ° C) | - Continuous (T C = 25 ° C) - Continuous (T C = 100 ° C) | 12 7.4 | 12* 7.4* | A A |
| I DM | Drain Current | - Pulsed | (Note 1) | 48 | 48* | A |
| V GSS | Gate-Source voltage | Gate-Source voltage | Gate-Source voltage | ± 30 | ± 30 | V |
| E AS | Single Pulsed Avalanche Energy | Single Pulsed Avalanche Energy | (Note 2) | 870 | 870 | mJ |
| I AR | Avalanche Current | Avalanche Current | (Note 1) | 12 | 12 | A |
| E AR | Repetitive Avalanche Energy | Repetitive Avalanche Energy | (Note 1) | 22.5 | 22.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | Peak Diode Recovery dv/dt | (Note 3) | 4.5 | 4.5 | V/ns |
| P D | Power Dissipation | (T C = 25 ° C) - Derate above 25 ° C | (T C = 25 ° C) - Derate above 25 ° C | 225 1.78 | 51 0.41 | W W/ ° C |
| T J, T STG | Operating and Storage Temperature Range | Operating and Storage Temperature Range | Operating and Storage Temperature Range | -55 to +150 | -55 to +150 | ° C |
| T L | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | 300 | 300 | ° C |
*Drain current limited by maximum junction temperature
Thermal Information
| Symbol | Parameter | FQP12N60C | FQPF12N60C | Unit |
|---|---|---|---|---|
| R θ JC | Thermal Resistance, Junction-to-Case | 0.56 | 2.43 | ° C/W |
| R θ JS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | -- | ° C/W |
| R θ JA | Thermal Resistance, Junction-to-Ambient | 62.5 | 62.5 | ° C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| FQP12N60C | Fairchild Semiconductor | — |
| FQPF12N60C | Fairchild Semiconductor | — |
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