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FOD817B

Phototransistor Optocoupler

The FOD817B is a phototransistor optocoupler from onsemi. View the full FOD817B datasheet below including key specifications, absolute maximum ratings.

Manufacturer

onsemi

Category

Optocouplers

Key Specifications

ParameterValue
Current - DC Forward (If) (Max)50 mA
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50mA
Current - Output / Channel50mA
Current Transfer Ratio (Max)160% @ 5mA
Current Transfer Ratio (Max)160% @ 5mA
Current Transfer Ratio (Min)80% @ 5mA
Current Transfer Ratio (Min)80% @ 5mA
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Number of Channels1
Operating Temperature-55°C ~ 110°C
Output TypeTransistor
Package / Case4-SMD, Gull Wing
PackagingTube
Rise / Fall Time (Typ)4µs, 3µs
Rise / Fall Time (Typ)4µs, 3µs
Standard Pack Qty2000
Supplier Device Package4-SMD
Supplier Device Package4-SMD
Vce Saturation (Max)200mV
Vce Saturation (Max)200mV
Forward Voltage (Vf)1.2V
Voltage - Isolation5000Vrms
Voltage - Isolation5000Vrms
Output Voltage (Max)70V

Overview

Part: FOD814 Series, FOD817 Series — Fairchild Semiconductor

Type: Phototransistor Optocoupler

Description: The FOD814 series consists of two inverse-parallel gallium arsenide infrared emitting diodes driving a silicon phototransistor, while the FOD817 series uses a single gallium arsenide infrared emitting diode driving a silicon phototransistor, both in a 4-pin dual in-line package with 5000Vrms isolation and high operating temperatures.

Operating Conditions:

  • Operating temperature: -55 to +110 °C (FOD817), -55 to +105 °C (FOD814)
  • Lead Solder Temperature: 260 °C for 10 sec
  • Junction Temperature: 125 °C Max.

Absolute Maximum Ratings:

  • Max continuous forward current (emitter): ±50 mA (FOD814), 50 mA (FOD817)
  • Max collector-emitter voltage: 70 V
  • Max continuous collector current: 50 mA
  • Max total power dissipation: 200 mW
  • Max junction temperature: 125 °C
  • Max storage temperature: -55 to +150 °C

Key Specs:

  • Input-Output Isolation Voltage: 5000 Vac(rms) (f = 60Hz, t = 1 min)
  • Collector-Emitter Breakdown Voltage: 70 V (I C = 0.1mA, I F = 0)
  • Forward Voltage (emitter): 1.2 V (Typ.) at I F = ±20mA (FOD814), 20mA (FOD817)
  • Collector Dark Current: 100 nA (Max.) at V CE = 20V, I F = 0
  • Current Transfer Ratio (FOD814): 20–300% (I F = ±1mA, V CE = 5V)
  • Current Transfer Ratio (FOD817): 50–600% (I F = 5mA, V CE = 5V)
  • Cut-Off Frequency (FOD814): 15 kHz (Min.) at V CE = 5V, I C = 2mA, R L = 100 Ω
  • Response Time (Rise/Fall): 4 μs (Typ. rise), 3 μs (Typ. fall) at V CE = 2 V, I C = 2mA, R L = 100 Ω

Features:

  • AC input response (FOD814 only)
  • Applicable to Pb-free IR reflow soldering
  • Compact 4-pin package
  • C-UL, UL and VDE approved
  • High input-output isolation voltage of 5000Vrms
  • Minimum BV CEO of 70V guaranteed
  • Higher operating temperatures (versus H11AXXX counterparts)

Applications:

  • AC line monitor (FOD814 Series)
  • Unknown polarity DC sensor (FOD814 Series)
  • Telephone line interface (FOD814 Series)
  • Power supply regulators (FOD817 Series)
  • Digital logic inputs (FOD817 Series)
  • Microprocessor inputs (FOD817 Series)

Package:

  • 4-pin dual in-line package

Features

  • ■ AC input response (FOD814 only)

  • ■ Applicable to Pb-free IR reflow soldering

  • ■ Compact 4-pin package

  • ■ C-UL, UL and VDE approved

  • ■ High input-output isolation voltage of 5000Vrms

  • ■ Minimum BV CEO of 70V guaranteed

  • ■ Higher operating temperatures (versus H11AXXX counterparts)

  • ■ Current transfer ratio in selected groups:

FOD814: 20-300%

FOD817: 50-600%

FOD814A: 50-150%

FOD817A: 80-160%

FOD817B: 130-260%

FOD817C: 200-400%

FOD817D: 300-600%

Applications

FOD814 Series

  • ■ AC line monitor
  • ■ Unknown polarity DC sensor
  • ■ Telephone line interface

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

ValueValueUnits
SymbolParameterFOD814FOD817
TOTAL DEVICETOTAL DEVICE
T STGStorage Temperature-55 to +150-55 to +150°C
T OPROperating Temperature-55 to +105-55 to +110°C
T SOLLead Solder Temperature260 for 10 sec260 for 10 sec°C
T JJunction Temperature125 Max.125 Max.°C
θ JCJunction-to-Case Thermal Resistance210210°C/W
P TOTTotal Power Dissipation200200mW
EMITTEREMITTER
I FContinuous Forward Current±5050mA
V RReverse Voltage6
P DPower Dissipation Derate above 100°C70 1.770 1.7mW mW/°C
DETECTORDETECTOR
V CEOCollector-Emitter Voltage7070V
V ECOEmitter-Collector Voltage66V
I CContinuous Collector Current5050mA
P CCollector Power Dissipation Derate above 90°C150 2.9150 2.9mW mW/°C

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
FOD814onsemi
FOD814Aonsemi
FOD817onsemi
FOD817Aonsemi
FOD817ASonsemi4-SMD, Gull Wing
FOD817Consemi4-pin Dual In-line Package
FOD817Donsemi
FOD81Xonsemi
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