FOD814A

Part: FOD814 Series, FOD817 Series

Type: Phototransistor Optocouplers

Key Specs:

• Input-Output Isolation Voltage: 5000 Vrms
• Collector-Emitter Breakdown Voltage (Min): 70 V
• Operating Temperature: -55 to +110 °C
• Current Transfer Ratio: 20-600%

Features:

• AC input response (FOD814 only)
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• C-UL, UL and VDE approved
• Higher operating temperatures (versus H11AXXX counterparts)

Applications:

• FOD814 Series:
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
• FOD817 Series:
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs

Package:

• 4-pin dual in-line package: No dimensions specified

• AC input response (FOD814 only)
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• Current transfer ratio in selected groups:

FOD814: 20–300% FOD814A: 50–150% FOD817: 50–600% FOD817A: 80–160%

FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600%

• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000Vrms
• Minimum BV_CEO of 70V guaranteed
• Higher operating temperatures (versus H11AXXX counterparts)

FOD814 Series

• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface

Individual Component Characteristics

Symbol	Parameter	Device	Test Conditions	Min.	Typ.*	Max.	Unit
EMITTER
VF	Forward Voltage	FOD814	IF = ±20mA		1.2	1.4	V
		FOD817	IF = 20mA		1.2	1.4
IR	Reverse Leakage Current	FOD817	VR = 4.0V			10	μA
Ct	Terminal Capacitance	FOD814	V = 0, f = 1kHz		50	250	pF
		FOD817	V = 0, f = 1kHz		30	250
DETECTOR
ICEO	Collector Dark Current	FOD814	VCE = 20V, IF = 0			100	nA
		FOD817	VCE = 20V, IF = 0			100
BVCEO	Collector-Emitter Breakdown	FOD814	IC = 0.1mA, IF = 0	70			V
	Voltage	FOD817	IC = 0.1mA, IF = 0	70
BVECO	Emitter-Collector Breakdown	FOD814	IE = 10μA, IF = 0	6			V
	Voltage	FOD817	IE = 10μA, IF = 0	6

DC Transfer Characteristics

Symbol	DC Characteristic	Device	Test Conditions	Min.	Typ.*	Max.	Unit
CTR	Current Transfer	FOD814	IF = ±1mA, VCE = 5V(1)	20		300	%
	Ratio	FOD814A		50		150
		FOD817	IF = 5mA, VCE = 5V(1)	50		600
		FOD817A		80		160
		FOD817B		130		260
		FOD817C		200		400
		FOD817D		300		600
VCE (sat)	Collector-Emitter	FOD814	IF = ±20mA, IC = 1mA		0.1	0.2	V
	Saturation Voltage	FOD817	IF = 20mA, IC = 1mA		0.1	0.2

AC Transfer Characteristics

Symbol	AC Characteristic	Device	Test Conditions	Min.	Typ.*	Max.	Unit
fC	Cut-Off Frequency	FOD814	VCE = 5V, IC = 2mA, RL = 100Ω, -3dB	15	80		kHz
tr	Response Time (Rise)	FOD814, FOD817	VCE = 2 V, IC = 2mA, RL = 100Ω(2)		4	18	μs
tf	Response Time (Fall)	FOD814, FOD817			3	18	μs

^*Typical values at TA = 25°C

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

				Value	Units
Symbol	Parameter		FOD814	FOD817
TOTAL DEVICE
TSTG	Storage Temperature			-55 to +150	°C
TOPR	Operating Temperature		-55 to +105	-55 to +110	°C
TSOL	Lead Solder Temperature			260 for 10 sec	°C
TJ	Junction Temperature			125 Max.	°C
θJC	Junction-to-Case Thermal Resistance			210	°C/W
PTOT	Total Power Dissipation			200
EMITTER
IF	Continuous Forward Current		±50	50	mA
VR	Reverse Voltage			6
PD	Power Dissipation Derate above 100°C			70 1.7	mW mW/°C
DETECTOR
VCEO	Collector-Emitter Voltage			70	V
VECO	Emitter-Collector Voltage			6	V
IC	Continuous Collector Current			50	mA
PC	Collector Power Dissipation			150	mW
	Derate above 90°C			2.9	mW/°C