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FAN7380MX

Half-Bridge Gate Driver

The FAN7380MX is a half-bridge gate driver from onsemi. View the full FAN7380MX datasheet below including key specifications, absolute maximum ratings.

Manufacturer

onsemi

Category

Half-Bridge Gate Driver

Package

8-SOIC (0.154", 3.90mm Width)

Lifecycle

Active

Key Specifications

ParameterValue
Channel TypeIndependent
Channel TypeIndependent
Current - Peak Output (Source, Sink)90mA, 180mA
Current - Peak Output (Source, Sink)90mA, 180mA
DigiKey ProgrammableNot Verified
DigiKey ProgrammableNot Verified
Driven ConfigurationHalf-Bridge
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap)600 V
High Side Voltage - Max (Bootstrap)600 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH0.8V, 2.5V
Logic Voltage - VIL, VIH0.8V, 2.5V
Mounting TypeSurface Mount
Number of Drivers2
Number of Drivers2
Operating Temperature-40°C ~ 150°C (TJ)
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingMouseReel
PackagingMouseReel
PackagingMouseReel
Rise / Fall Time (Typ)230ns, 90ns
Rise / Fall Time (Typ)230ns, 90ns
Standard Pack Qty3000
Standard Pack Qty3000
Standard Pack Qty3000
Supplier Device Package8-SOIC
Supplier Device Package8-SOIC
Supply Voltage10V ~ 20V

Overview

Part: FAN7380 — onsemi

Type: Half-Bridge Gate Driver

Description: Monolithic half-bridge gate-drive IC for MOSFETs and IGBTs operating up to +600 V, featuring 90 mA / 180 mA typical sourcing/sinking current and 100 ns built-in dead-time control.

Operating Conditions:

  • Supply voltage: 10–20 V (VCC & VBS)
  • Operating temperature: -40 to 125 °C
  • High-side floating supply offset voltage: 6 - VCC to 600 V

Absolute Maximum Ratings:

  • Max supply voltage (VCC): 25.0 V
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Output Sourcing Current (I O+): 90 mA (Typ) at V O = 0 V, V IN = 5 V
  • Output Sinking Current (I O-): 180 mA (Typ) at V O = 15 V, V IN = 0 V
  • High-side Floating Supply Voltage (V B): up to 600 V
  • Turn-on Propagation Delay (t on): 135 ns (Typ) at VCC, VBS = 15 V, TA = 25 °C, C L = 1000 pF
  • Turn-off Propagation Delay (t off): 130 ns (Typ) at VCC, VBS = 15 V, TA = 25 °C, C L = 1000 pF
  • Dead Time (DT): 120 ns (Typ)
  • Delay Matching (MT): 50 ns (Max)

Features:

  • Typically 90 mA / 180 mA Sourcing/Sinking Current Driving Capability for Both Channels
  • Floating Channel Designed for Bootstrapping Operation to +600 V
  • Common-Mode dv/dt Noise Cancelling Circuit
  • Built-in 100 ns Dead-Time Control Function
  • UVLO Functions for Both Channels
  • TTL-Compatible Input Logic Threshold Levels

Applications:

  • Compact Fluorescent Lamp Ballast
  • Fluorescent Lamp Ballast

Package:

  • SOIC8 (8-SOP)

Features

  • Typically 90 mA / 180 mA Sourcing/Sinking Current Driving Capability for Both Channels
  • Floating Channel Designed for Bootstrapping Operation to +600 V
  • Common-Mode dv/dt Noise Cancelling Circuit
  • VCC & VBS Supply Range from 10 V to 20 V
  • Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at VCC = VBS = 15 V
  • UVLO Functions for Both Channels
  • Matched Propagation Delay Below 50 ns
  • TTL-Compatible Input Logic Threshold Levels
  • Built-in 100 ns Dead-Time Control Function
  • This is a Pb-Free Device
  • Output In-Phase with Input Signal

Applications

  • Compact Fluorescent Lamp Ballast
  • Fluorescent Lamp Ballast

Pin Configuration

Figure 3. Pin Configuration (Top View)

Absolute Maximum Ratings

SymbolParameterMinMaxUnit
V SHigh-side Offset VoltageV B - 25V B + 0.3V
V BHigh-side Floating Supply Voltage-0.3625.0
V HOHigh-side Floating Output Voltage HOV S - 0.3V B + 0.3
V CCLow-side and Logic-fixed Supply Voltage-0.325.0
V LOLow-side Output Voltage LO-0.3V CC + 0.3
V INLogic Input Voltage (HIN, LIN)-0.3V CC + 0.3
COMLogic GroundV CC - 25V CC + 0.3
dV S /dtAllowable Offset Voltage Slew Rate-50V/ns
P D (Note 1, 2, 3)Power Dissipation-0.625W
q JAThermal Resistance, Junction-to-ambient-200° C/W
T JJunction Temperature-150° C
T SStorage Temperature-50150° C

Recommended Operating Conditions

SymbolParameterMinMaxUnit
V BHigh-side Floating Supply VoltageV S + 10V S + 20V
V SHigh-side Floating Supply Offset Voltage6 - V CC600
V HOHigh-side (HO) Output VoltageV SV B
V LOLow-side (LO) Output VoltageCOMV CC
V INLogic Input Voltage (HIN, LIN)COMV CC
V CCLow-side Supply Voltage1020
T AAmbient Temperature-40125° C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

STATIC ELECTRICAL CHARACTERISTICS (V BIAS (V CC , V BS ) = 15.0 V, T A = 25 ° C, unless otherwise specified. The V IN and I IN parameters are referenced to COM. The V O and I O parameters are referenced to V S and COM and are applicable to the respective outputs HO and LO.)

SymbolParameterTest ConditionMinTypMaxUnit
V CCUV + V BSUV +V CC & V BS Supply Under-voltage Positive Going Threshold8.29.210.0V
V CCUV - V BSUV -V CC & V BS Supply Under-voltage Negative Going Threshold7.68.79.6V
V CCUVH V BSUVHV CC Supply Under-voltage Lockout Hysteresis-0.5-V
I LKOffset Supply Leakage CurrentV B = V S = 600 V--50m A
I QBSQuiescent V BS Supply CurrentV IN = 0 V or 5 V-44100m A
I QCCQuiescent V CC Supply CurrentV IN = 0 V or 5 V-70180m A
I PBSOperating V BS Supply Currentf IN = 20 kHz, rms value--600m A
I PCCOperating V CC Supply Currentf IN = 20 kHz, rms value--610m A
V IHLogic '1' Input Voltage2.5--V
V ILLogic '0' Input Voltage--0.8V
V OHHigh-level Output Voltage, V BIAS -V OI O = 20 mA--2.8V
V OLLow-level Output Voltage, V O--1.2V
I IN+Logic '1' Input Bias CurrentV IN = 5 V-540m A
I IN-Logic '0' Input Bias CurrentV IN = 0 V-1.02.0m A
I O+Output HIGH Short-circuit Pulse CurrentV O = 0 V, V IN = 5 V with PW ≤ 10 m s6090-mA
I O-Output LOW Short-circuit Pulsed CurrentV O = 15 V, V IN = 0 V with PW ≤ 10 m s130180-mA
V SAllowable Negative V S Pin Voltage for HIN Signal Propagation to HO--9.8-7.0V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DYNAMIC ELECTRICAL CHARACTERISTICS (V BIAS (V CC , V BS ) = 15.0 V, V S = COM, C L = 1000 pF and T A = 25 ° C, unless otherwise specified.)

SymbolParameterTest ConditionMinTypMaxUnit
t onTurn-on Propagation DelayV S = 0 V70135200ns
t offTurn-off Propagation DelayV S = 0 V or 600 V (Note 4)60130190
t rTurn-on Rise Time160230290
t fTurn-off Fall Time2090160
DTDead Time80120190
MTDelay Matching, HS & LS Turn-on/off--50
  1. This parameter guaranteed by design.

Typical Application

  • Compact Fluorescent Lamp Ballast
  • Fluorescent Lamp Ballast

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
FAN7380onsemiSOIC8 (8-SOP)
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