FAN7380

Half-Bridge Gate Driver

The FAN7380 is a half-bridge gate driver from onsemi. View the full FAN7380 datasheet below including key specifications, pinout, absolute maximum ratings.

Manufacturer

onsemi

Key Specifications

Parameter	Value
Packaging	Reel
Standard Pack Qty	3000
Dead Time	120 ns (typical)
Output Sinking Current	180 mA (typical)
Output Sourcing Current	90 mA (typical)
Propagation Delay Matching	50 ns (maximum)
Supply Voltage (VCC & VBS)	10 V to 20 V
Operating Temperature Range	-40 °C to +125 °C
Quiescent VBS Supply Current	44 µA (typical)
Quiescent VCC Supply Current	70 µA (typical)
High-Side Offset Voltage (VS)	up to +600 V
Logic Input Low Voltage (VIL)	0.8 V (maximum)
Logic Input High Voltage (VIH)	2.5 V (minimum)

Overview

Part: FAN7380 — onsemi

Type: Half-Bridge Gate Driver

Description: Monolithic half-bridge gate-drive IC for MOSFETs and IGBTs operating up to +600 V, featuring 90 mA / 180 mA typical sourcing/sinking current and 100 ns built-in dead-time control.

Operating Conditions:

Supply voltage: 10–20 V (VCC & VBS)
Operating temperature: -40 to 125 °C
High-side floating supply offset voltage: 6 - VCC to 600 V

Absolute Maximum Ratings:

Max supply voltage (VCC): 25.0 V
Max junction temperature: 150 °C
Max storage temperature: 150 °C

Key Specs:

Output Sourcing Current (I O+): 90 mA (Typ) at V O = 0 V, V IN = 5 V
Output Sinking Current (I O-): 180 mA (Typ) at V O = 15 V, V IN = 0 V
High-side Floating Supply Voltage (V B): up to 600 V
Turn-on Propagation Delay (t on): 135 ns (Typ) at VCC, VBS = 15 V, TA = 25 °C, C L = 1000 pF
Turn-off Propagation Delay (t off): 130 ns (Typ) at VCC, VBS = 15 V, TA = 25 °C, C L = 1000 pF
Dead Time (DT): 120 ns (Typ)
Delay Matching (MT): 50 ns (Max)

Features:

Typically 90 mA / 180 mA Sourcing/Sinking Current Driving Capability for Both Channels
Floating Channel Designed for Bootstrapping Operation to +600 V
Common-Mode dv/dt Noise Cancelling Circuit
Built-in 100 ns Dead-Time Control Function
UVLO Functions for Both Channels
TTL-Compatible Input Logic Threshold Levels

Applications:

Compact Fluorescent Lamp Ballast
Fluorescent Lamp Ballast

Package:

SOIC8 (8-SOP)

Features

Typically 90 mA / 180 mA Sourcing/Sinking Current Driving Capability for Both Channels
Floating Channel Designed for Bootstrapping Operation to +600 V
Common-Mode dv/dt Noise Cancelling Circuit
VCC & VBS Supply Range from 10 V to 20 V
Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at VCC = VBS = 15 V
UVLO Functions for Both Channels
Matched Propagation Delay Below 50 ns
TTL-Compatible Input Logic Threshold Levels
Built-in 100 ns Dead-Time Control Function
This is a Pb-Free Device
Output In-Phase with Input Signal

Applications

Compact Fluorescent Lamp Ballast
Fluorescent Lamp Ballast

Pin Configuration

FAN7380 SOIC8 Pinout

Pin Number	Pin Name	Type	Description
1	LIN	I	Low-side gate driver input
2	HIN	I	High-side gate driver input
3	VCC	P	Power supply
4	COM	P	Common ground reference
5	LO	O	Low-side gate driver output
6	VS	P	Low-side source voltage
7	HO	O	High-side gate driver output
8	VB	P	High-side bootstrap supply

Notes

FAN7380 is a high-speed gate driver for half-bridge topologies
VB (pin 8) requires bootstrap capacitor for high-side gate drive
VS (pin 6) is the source reference for low-side output
COM (pin 4) is the ground reference for input logic

Absolute Maximum Ratings

Symbol	Parameter	Min	Max	Unit
V S	High-side Offset Voltage	V B - 25	V B + 0.3	V
V B	High-side Floating Supply Voltage	-0.3	625.0
V HO	High-side Floating Output Voltage HO	V S - 0.3	V B + 0.3
V CC	Low-side and Logic-fixed Supply Voltage	-0.3	25.0
V LO	Low-side Output Voltage LO	-0.3	V CC + 0.3
V IN	Logic Input Voltage (HIN, LIN)	-0.3	V CC + 0.3
COM	Logic Ground	V CC - 25	V CC + 0.3
dV S /dt	Allowable Offset Voltage Slew Rate	-	50	V/ns
P D (Note 1, 2, 3)	Power Dissipation	-	0.625	W
q JA	Thermal Resistance, Junction-to-ambient	-	200	° C/W
T J	Junction Temperature	-	150	° C
T S	Storage Temperature	-50	150	° C

Recommended Operating Conditions

Symbol	Parameter	Min	Max	Unit
V B	High-side Floating Supply Voltage	V S + 10	V S + 20	V
V S	High-side Floating Supply Offset Voltage	6 - V CC	600
V HO	High-side (HO) Output Voltage	V S	V B
V LO	Low-side (LO) Output Voltage	COM	V CC
V IN	Logic Input Voltage (HIN, LIN)	COM	V CC
V CC	Low-side Supply Voltage	10	20
T A	Ambient Temperature	-40	125	° C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

STATIC ELECTRICAL CHARACTERISTICS (V BIAS (V CC , V BS ) = 15.0 V, T A = 25 ° C, unless otherwise specified. The V IN and I IN parameters are referenced to COM. The V O and I O parameters are referenced to V S and COM and are applicable to the respective outputs HO and LO.)

Symbol	Parameter	Test Condition	Min	Typ	Max	Unit
V CCUV + V BSUV +	V CC & V BS Supply Under-voltage Positive Going Threshold		8.2	9.2	10.0	V
V CCUV - V BSUV -	V CC & V BS Supply Under-voltage Negative Going Threshold		7.6	8.7	9.6	V
V CCUVH V BSUVH	V CC Supply Under-voltage Lockout Hysteresis		-	0.5	-	V
I LK	Offset Supply Leakage Current	V B = V S = 600 V	-	-	50	m A
I QBS	Quiescent V BS Supply Current	V IN = 0 V or 5 V	-	44	100	m A
I QCC	Quiescent V CC Supply Current	V IN = 0 V or 5 V	-	70	180	m A
I PBS	Operating V BS Supply Current	f IN = 20 kHz, rms value	-	-	600	m A
I PCC	Operating V CC Supply Current	f IN = 20 kHz, rms value	-	-	610	m A
V IH	Logic '1' Input Voltage		2.5	-	-	V
V IL	Logic '0' Input Voltage		-	-	0.8	V
V OH	High-level Output Voltage, V BIAS -V O	I O = 20 mA	-	-	2.8	V
V OL	Low-level Output Voltage, V O		-	-	1.2	V
I IN+	Logic '1' Input Bias Current	V IN = 5 V	-	5	40	m A
I IN-	Logic '0' Input Bias Current	V IN = 0 V	-	1.0	2.0	m A
I O+	Output HIGH Short-circuit Pulse Current	V O = 0 V, V IN = 5 V with PW ≤ 10 m s	60	90	-	mA
I O-	Output LOW Short-circuit Pulsed Current	V O = 15 V, V IN = 0 V with PW ≤ 10 m s	130	180	-	mA
V S	Allowable Negative V S Pin Voltage for HIN Signal Propagation to HO		-	-9.8	-7.0	V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DYNAMIC ELECTRICAL CHARACTERISTICS (V BIAS (V CC , V BS ) = 15.0 V, V S = COM, C L = 1000 pF and T A = 25 ° C, unless otherwise specified.)

Symbol	Parameter	Test Condition	Min	Typ	Max	Unit
t on	Turn-on Propagation Delay	V S = 0 V	70	135	200	ns
t off	Turn-off Propagation Delay	V S = 0 V or 600 V (Note 4)	60	130	190
t r	Turn-on Rise Time		160	230	290
t f	Turn-off Fall Time		20	90	160
DT	Dead Time		80	120	190
MT	Delay Matching, HS & LS Turn-on/off		-	-	50

This parameter guaranteed by design.

Typical Application

Compact Fluorescent Lamp Ballast
Fluorescent Lamp Ballast

Ordering Information

No ordering information found in the provided section. Please refer to page 11 of the datasheet as indicated.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
FAN7380MX	onsemi	8-SOIC (0.154", 3.90mm Width)

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