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EBC3015B65059D8B66A600FF66CEA0EBF3300B6BB9AE180B942F57689F7CEB9F

The EBC3015B65059D8B66A600FF66CEA0EBF3300B6BB9AE180B942F57689F7CEB9F is an electronic component. View the full EBC3015B65059D8B66A600FF66CEA0EBF3300B6BB9AE180B942F57689F7CEB9F datasheet below including specifications and datasheet sections.

Overview

Part: ADH8411S-CSL — Analog Devices, Inc.

Type: Low Noise Amplifier (LNA)

Description: A gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier operating from 0.01 GHz to 10 GHz, providing a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical OIP3 of 34 dBm, requiring 55 mA from a 5 V supply.

Operating Conditions:

  • Supply voltage: 2–6 V
  • Operating temperature: -55°C to +125°C
  • Frequency range: 0.01 GHz to 10 GHz

Absolute Maximum Ratings:

  • Max supply voltage: 7 V
  • Max RF input power: 20 dBm
  • Max channel temperature: 175°C
  • Max storage temperature: -65°C to +150°C

Key Specs:

  • Frequency Range: 0.01 GHz to 10 GHz
  • Gain: 15.5 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 1 GHz)
  • Noise Figure: 1.7 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
  • Output Third-Order Intercept (OIP3): 34 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz, P OUT per tone = 6 dBm)
  • Output Power for 1 dB Compression (P1dB): 20 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 6 GHz)
  • Saturated Output Power (P SAT): 21 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
  • Supply Current (I DQ): 55 mA typical (at VDD = 5 V, R BIAS = 1.1 kΩ)
  • Input Return Loss: 25 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)

Features:

  • Low noise figure: 1.7 dB typical
  • Single positive supply (self biased)
  • High gain: 15.5 dB typical
  • High OIP3: 34 dBm typical
  • Inputs and outputs internally matched to 50 Ω
  • Support aerospace applications
  • Wafer diffusion lot traceability
  • Radiation lot acceptance test: TID
  • No SEL occurs at effective linear energy transfer (LET): ≤ 62.4 MeV-cm 2 /mg

Applications:

  • Low earth orbit (LEO) satellites
  • Military communications
  • High capacity microwave radio applications

Package:

  • 6-lead, 2 mm × 2 mm LFCSP

Features

  • Low noise figure: 1.7 dB typical
  • Single positive supply (self biased)
  • High gain: 15.5 dB typical
  • High OIP3: 34 dBm typical
  • 6-lead, 2 mm × 2 mm LFCSP

Applications

  • Low earth orbit (LEO) satellites
  • Military communications

Pin Configuration

Figure 3. Pin Configuration

Table 10. Pin Function Descriptions

Pin No.MnemonicDescription
1R BIASCurrent Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See Figure 4 for the interface schematic.
2RF INRF Input. This pin is AC-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
3, 4NICNot Internally Connected. This pin is not connected internally. This pin must be connected to the RF and DC ground.
5RF OUT /V DDRadio Frequency Output (RF OUT ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. Drain Bias for the Amplifier (V DD ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic.
6GNDGround. This pin must be connected to the RF and DC ground. See Figure 7 for the interface schematic.

Thermal Information

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required.

θ JC is the junction to case thermal resistance.

Table 6. Thermal Resistance

Package Typeθ JCUnit
CP-6-12115.35°C/W

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ADH8411SAnalog Devices, Inc.
ADH8411S-CSLAnalog Devices, Inc.
ADH8411S-CSLAnalog Devices
ADH8411TCPZ-CSL-PTAnalog Devices
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