ADH8411S

Part: ADH8411S-CSL from Analog Devices, Inc.

Type: Low Noise Amplifier

Key Specs:

• Frequency Range: 0.01 GHz to 10 GHz
• Noise Figure: 1.7 dB typical
• Gain: 15.5 dB typical
• Output Third-Order Intercept (OIP3): 34 dBm typical
• Supply Voltage: 5 V
• Supply Current: 55 mA

Features:

• Low noise figure: 1.7 dB typical
• Single positive supply (self biased)
• High gain: 15.5 dB typical
• High OIP3: 34 dBm typical
• Support aerospace applications
• Wafer diffusion lot traceability
• Radiation lot acceptance test: TID
• Radiation benchmark: No SEL occurs at effective linear energy transfer (LET): ≤ 62.4 MeV-cm²/mg
• Inputs and outputs internally matched to 50 Ω

Applications:

• Low earth orbit (LEO) satellites
• Military communications
• Surface-mounted technology (SMT)-based, high capacity microwave radio applications

Package:

• 6-lead LFCSP: 2 mm × 2 mm

• ► Low noise figure: 1.7 dB typical
• ► Single positive supply (self biased)
• ► High gain: 15.5 dB typical
• ► High OIP3: 34 dBm typical
• ► 6-lead, 2 mm × 2 mm LFCSP

• ► Low earth orbit (LEO) satellites
• ► Military communications

Table 10. Pin Function Descriptions

INTERFACE SCHEMATICS

Figure 6. RFOUT/VDD Interface Schematic

Figure 4. RBIAS Interface Schematic

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Figure 5. RFIN Interface Schematic

Figure 8. Gain vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 9. Input Return Loss vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 10. Output Return Loss vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 11. Gain vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 12. Input Return Loss vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 13. Output Return Loss vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 14. Reverse Isolation vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 17. Reverse Isolation vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 18. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 19. P1dB vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 20. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 23. PSAT vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 24. PAE vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 25. OIP3 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 26. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Figure 27. OIP2 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA

Table 5.

¹ When referring to a single function of a multifunction pin in the parameters, only the portion of the pin name that is relevant to the specification is listed. For full pin names of multifunction pins, refer to the Pin Configuration and Function Descriptions section.

² For maximum power dissipation vs. case temperature, see Figure 2.

Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.

THERMAL RESISTANCE

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required.

θJC is the junction to case thermal resistance.

Table 6. Thermal Resistance

POWER DERATING CURVES

Figure 2. Maximum Power Dissipation vs. Case Temperature

Figure 2 shows the maximum power dissipation vs. case temperature.

OUTGAS TESTING

The criteria used for the acceptance and rejection of materials must be determined by the user and based on specific component and system requirements. Historically, a total mass loss (TML) of 1.00% and collected volatile condensable material (CVCM) of 0.10% have been used as screening levels for rejection of spacecraft materials.

Table 7. Outgas Testing

RADIATION FEATURES

Table 8. Radiation Features

• ¹ Guaranteed by device and process characterization. Contact Analog Devices for data available up to 30 krads.
• ² Limits are characterized at initial qualification and after any design or process changes that may affect the SEL characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract. For more information on single event effect (SEE) test results, contact Analog Devices for further data beyond published report on the Analog Devices website.

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required.

θJC is the junction to case thermal resistance.