ADH8411S
The ADH8411S is an electronic component from Analog Devices, Inc.. View the full ADH8411S datasheet below including specifications and datasheet sections.
Manufacturer
Analog Devices, Inc.
Overview
Part: ADH8411S-CSL — Analog Devices, Inc.
Type: Low Noise Amplifier (LNA)
Description: A gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier operating from 0.01 GHz to 10 GHz, providing a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical OIP3 of 34 dBm, requiring 55 mA from a 5 V supply.
Operating Conditions:
- Supply voltage: 2–6 V
- Operating temperature: -55°C to +125°C
- Frequency range: 0.01 GHz to 10 GHz
Absolute Maximum Ratings:
- Max supply voltage: 7 V
- Max RF input power: 20 dBm
- Max channel temperature: 175°C
- Max storage temperature: -65°C to +150°C
Key Specs:
- Frequency Range: 0.01 GHz to 10 GHz
- Gain: 15.5 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 1 GHz)
- Noise Figure: 1.7 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
- Output Third-Order Intercept (OIP3): 34 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz, P OUT per tone = 6 dBm)
- Output Power for 1 dB Compression (P1dB): 20 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 6 GHz)
- Saturated Output Power (P SAT): 21 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
- Supply Current (I DQ): 55 mA typical (at VDD = 5 V, R BIAS = 1.1 kΩ)
- Input Return Loss: 25 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
Features:
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- Inputs and outputs internally matched to 50 Ω
- Support aerospace applications
- Wafer diffusion lot traceability
- Radiation lot acceptance test: TID
- No SEL occurs at effective linear energy transfer (LET): ≤ 62.4 MeV-cm 2 /mg
Applications:
- Low earth orbit (LEO) satellites
- Military communications
- High capacity microwave radio applications
Package:
- 6-lead, 2 mm × 2 mm LFCSP
Features
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- 6-lead, 2 mm × 2 mm LFCSP
Applications
- Low earth orbit (LEO) satellites
- Military communications
Pin Configuration
Figure 3. Pin Configuration
Table 10. Pin Function Descriptions
| Pin No. | Mnemonic | Description |
|---|---|---|
| 1 | R BIAS | Current Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See Figure 4 for the interface schematic. |
| 2 | RF IN | RF Input. This pin is AC-coupled and matched to 50 Ω. See Figure 5 for the interface schematic. |
| 3, 4 | NIC | Not Internally Connected. This pin is not connected internally. This pin must be connected to the RF and DC ground. |
| 5 | RF OUT /V DD | Radio Frequency Output (RF OUT ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. Drain Bias for the Amplifier (V DD ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. |
| 6 | GND | Ground. This pin must be connected to the RF and DC ground. See Figure 7 for the interface schematic. |
Thermal Information
Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required.
θ JC is the junction to case thermal resistance.
Table 6. Thermal Resistance
| Package Type | θ JC | Unit |
|---|---|---|
| CP-6-12 | 115.35 | °C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| ADH8411S-CSL | Analog Devices | — |
| ADH8411S-CSL | Analog Devices, Inc. | — |
| ADH8411TCPZ-CSL-PT | Analog Devices | — |
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