ADH8411S
GaAs pHEMT Low Noise AmplifierThe ADH8411S is a gaas phemt low noise amplifier from Analog Devices. View the full ADH8411S datasheet below including key specifications.
ADH8411S Key Specifications
| Parameter | Value |
|---|---|
| Gain | 15.5 dB typ (0.01-1 GHz), 15 dB typ (1-6 GHz), 14 dB typ (6-10 GHz) |
| OIP3 | 34 dBm typ |
| P1dB | 20 dBm typ (up to 6 GHz) |
| Noise Figure | 1.7 dB typ (1-6 GHz) |
| SEL Immunity | No SEL at LET ≤ 62.4 MeV-cm²/mg |
| Frequency Range | 0.01 GHz to 10 GHz |
| Package Dimensions | 2 mm × 2 mm, 0.85 mm height |
| Total Ionizing Dose | 30 krads (Si) |
| Supply Current (IDQ) | 55 mA typ |
| Supply Voltage (VDD) | 2 V to 6 V (5 V typ) |
| Input/Output Impedance | 50 Ω internally matched |
| Operating Temperature Range | -55°C to +125°C |
| Saturated Output Power (PSAT) | 19.5 dBm typ to 21 dBm typ |
ADH8411S Overview
Part: ADH8411S-CSL — Analog Devices, Inc.
Type: Low Noise Amplifier (LNA)
Description: A gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier operating from 0.01 GHz to 10 GHz, providing a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical OIP3 of 34 dBm, requiring 55 mA from a 5 V supply.
Operating Conditions:
- Supply voltage: 2–6 V
- Operating temperature: -55°C to +125°C
- Frequency range: 0.01 GHz to 10 GHz
Absolute Maximum Ratings:
- Max supply voltage: 7 V
- Max RF input power: 20 dBm
- Max channel temperature: 175°C
- Max storage temperature: -65°C to +150°C
Key Specs:
- Frequency Range: 0.01 GHz to 10 GHz
- Gain: 15.5 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 1 GHz)
- Noise Figure: 1.7 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
- Output Third-Order Intercept (OIP3): 34 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz, P OUT per tone = 6 dBm)
- Output Power for 1 dB Compression (P1dB): 20 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 0.01 GHz to 6 GHz)
- Saturated Output Power (P SAT): 21 dBm typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
- Supply Current (I DQ): 55 mA typical (at VDD = 5 V, R BIAS = 1.1 kΩ)
- Input Return Loss: 25 dB typical (at VDD = 5 V, IDQ = 55 mA, TA = 25°C, 1 GHz to 6 GHz)
Features:
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- Inputs and outputs internally matched to 50 Ω
- Support aerospace applications
- Wafer diffusion lot traceability
- Radiation lot acceptance test: TID
- No SEL occurs at effective linear energy transfer (LET): ≤ 62.4 MeV-cm 2 /mg
Applications:
- Low earth orbit (LEO) satellites
- Military communications
- High capacity microwave radio applications
Package:
- 6-lead, 2 mm × 2 mm LFCSP
ADH8411S Features
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- 6-lead, 2 mm × 2 mm LFCSP
ADH8411S Applications
- Low earth orbit (LEO) satellites
- Military communications
ADH8411S Pin Configuration
Figure 3. Pin Configuration
Table 10. Pin Function Descriptions
| Pin No. | Mnemonic | Description |
|---|---|---|
| 1 | R BIAS | Current Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See Figure 4 for the interface schematic. |
| 2 | RF IN | RF Input. This pin is AC-coupled and matched to 50 Ω. See Figure 5 for the interface schematic. |
| 3, 4 | NIC | Not Internally Connected. This pin is not connected internally. This pin must be connected to the RF and DC ground. |
| 5 | RF OUT /V DD | Radio Frequency Output (RF OUT ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. Drain Bias for the Amplifier (V DD ). This pin is AC-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. |
| 6 | GND | Ground. This pin must be connected to the RF and DC ground. See Figure 7 for the interface schematic. |
ADH8411S Thermal Information
Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required.
θ JC is the junction to case thermal resistance.
Table 6. Thermal Resistance
| Package Type | θ JC | Unit |
|---|---|---|
| CP-6-12 | 115.35 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| ADH8411S-CSL | Analog Devices | — |
| ADH8411TCPZ-CSL-PT | Analog Devices | — |
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All Integrated Circuits datasheetsAll Analog Devices datasheets (700)
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