DRV5023FAQDBZR
Digital Switch Hall Effect SensorThe DRV5023FAQDBZR is a digital switch hall effect sensor from Texas Instruments. View the full DRV5023FAQDBZR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official DRV5023FAQDBZR datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
Digital Switch Hall Effect Sensor
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle
Active
DRV5023FAQDBZR Key Specifications
| Parameter | Value |
|---|---|
| Current - Output (Max) | 30mA |
| Supply Current (Max) | 3.5mA |
| Function | Unipolar Switch |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TA) |
| Output Type | Open Drain |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Polarization | South Pole |
| Sensing Range | 3.5mT Trip, 2mT Release |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | Hall Effect |
| Test Condition | -40°C ~ 125°C |
| Supply Voltage | 2.5V ~ 38V |
DRV5023FAQDBZR Overview
Part: DRV5023FAQDBZR — Texas Instruments
Type: Digital Unipolar-Switch Hall Effect Sensor
Description: 2.5–38 V chopper-stabilized unipolar Hall effect switch with open-drain output (30 mA sink), FA sensitivity option (BOP / BRP of 3.5 / 2 mT), and reverse supply protection to -22 V.
Operating Conditions:
- Supply voltage: 2.5–38 V
- Operating temperature: -40 to 125 °C (Q grade)
- Output pin voltage: 0–38 V; output sink current: 0–30 mA
Absolute Maximum Ratings:
- Max output pin voltage: 40 V
- Max junction temperature: 150 °C
- Storage temperature: -65 to 150 °C
Key Specs:
- Supply current ICC: 2.7 mA typ at TA = 25 °C; 3 mA typ, 3.5 mA max at TA = 125 °C (VCC = 2.5 to 38 V)
- Power-on time (FA version): 35 μs typ, 70 μs max
- FET on-resistance rDS(on): 22 Ω typ at 25 °C; 36 Ω typ, 50 Ω max at 125 °C (VCC = 3.3 V, IO = 10 mA)
- Off-state leakage current: 1 μA max
- Overcurrent protection level IOCP: 15 / 30 / 45 mA (min / typ / max), OUT shorted to VCC
- Output delay time: 13–25 μs
- Output rise / fall time: 200 ns / 31 ns (R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V)
- Bandwidth: 20 kHz min, 30 kHz typ
- Thermal resistance RθJA (SOT-23 DBZ): 333.2 °C/W
Features:
- Digital unipolar-switch Hall sensor
- Sensitivity ±10% over temperature
- Multiple sensitivity options (FA, AJ, BI)
- No external regulator required
- Open-drain output with 30 mA sink
- Reverse supply protection up to -22 V
- Supports up to 40 V load dump
- Output short-circuit protection and current limitation
- ESD: HBM ±2500 V, CDM ±500 V
Applications:
- Docking detection
- Door open and close detection
- Proximity sensing
- Valve positioning
- Pulse counting
Package:
- SOT-23 (DBZ), 3-pin, 2.92 mm × 1.30 mm body
- TO-92 (LPG), 3-pin, 4.00 mm × 3.15 mm
DRV5023FAQDBZR Features
- 1 · Digital Unipolar-Switch Hall Sensor
- Superior Temperature Stability
- -Sensitivity ±10% Over Temperature
- Multiple Sensitivity Options (BOP / BRP):
- -3.5 / 2 mT (FA, see Figure 24)
- -6.9 / 3.2 mT (AJ, see Figure 24)
- -14.5 / 6 mT (BI, see Figure 24)
- Supports a Wide Voltage Range
- -2.5 to 38 V
- -No External Regulator Required
- Wide Operating Temperature Range
- -TA = -40 to 125°C (Q, see Figure 24)
- Open Drain Output (30-mA Sink)
- Fast 35-μs Power-On Time
- Small Package and Footprint
- -Surface Mount 3-Pin SOT-23 (DBZ)
- -2.92 mm × 2.37 mm
- -Through-Hole 3-Pin TO-92 (LPG)
- -4.00 mm × 3.15 mm
DRV5023FAQDBZR Applications
- Docking Detection
- Door Open and Close Detection
- Proximity Sensing
- Valve Positioning
- Pulse Counting
DRV5023FAQDBZR Pin Configuration
For additional configuration information, see Device Markings and Mechanical, Packaging, and Orderable Information .
DRV5023FAQDBZR Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| POWER SUPPLIES (V CC ) | POWER SUPPLIES (V CC ) | |||||
| V CC | V CC operating voltage | 2.5 | 38 | V | ||
| I CC | Operating supply current | V CC = 2.5 to 38 V, T A = 25°C | 2.7 | mA | ||
| I CC | Operating supply current | V CC = 2.5 to 38 V, T A = 125°C | 3 | 3.5 | mA | |
| t on | Power-on time | AJ, BI versions | 35 | 50 | μs | |
| t on | Power-on time | FA version | 35 | 70 | μs | |
| OPEN DRAIN OUTPUT (OUT) | OPEN DRAIN OUTPUT (OUT) | |||||
| r DS(on) | FET on-resistance | V CC = 3.3 V, I O = 10 mA, T A = 25°C | 22 | Ω | ||
| r DS(on) | FET on-resistance | V CC = 3.3 V, I O = 10 mA, T A = 125°C | 36 | 50 | Ω | |
| I lkg(off) | Off-state leakage current | Output Hi-Z | 1 | μA | ||
| PROTECTION CIRCUITS | PROTECTION CIRCUITS | |||||
| V CCR | Reverse supply voltage | -22 | V | |||
| I OCP | Overcurrent protection level | OUT shorted V CC | 15 | 30 | 45 | mA |
DRV5023FAQDBZR Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Power supply voltage | V CC | -22 (2) | 40 | V |
| Voltage ramp rate (V CC ), V CC < 5 V | Unlimited | Unlimited | V/μs | |
| Voltage ramp rate (V CC ), V CC > 5 V | 0 | 2 | V/μs | |
| Output pin voltage | Output pin voltage | -0.5 | 40 | V |
| Output pin reverse current during reverse supply condition | Output pin reverse current during reverse supply condition | 0 | 100 | mA |
| Magnetic flux density, B MAX | Magnetic flux density, B MAX | Unlimited | Unlimited | |
| Operating junction temperature, T J | Operating junction temperature, T J | -40 | 150 | °C |
| Storage temperature, T stg | Storage temperature, T stg | -65 | 150 | °C |
DRV5023FAQDBZR Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V CC | Power supply voltage | 2.5 | 38 | V |
| V O | Output pin voltage (OUT) | 0 | 38 | V |
| I SINK | Output pin current sink (OUT) (1) | 0 | 30 | mA |
| T A | Operating ambient temperature | -40 | 125 | °C |
DRV5023FAQDBZR Thermal Information
| THERMAL METRIC | (1) | DRV5023 - DBZ (SOT-23) - 3 PINS | DRV5023 - LPG (TO-92) - 3 PINS | UNIT |
|---|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 333.2 | 180 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 99.9 | 98.6 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 66.9 | 154.9 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 4.9 | 40 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 65.2 | 154.9 | °C/W |
DRV5023FAQDBZR Typical Application
The DRV5023 device is used in magnetic-field sensing applications.
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