C80670

The C80670 is an electronic component. View the full C80670 datasheet below including electrical characteristics, absolute maximum ratings.

Overview

Part: 2SC6082-1E — onsemi

Type: NPN Bipolar Transistor

Description: 50 V, 15 A NPN bipolar transistor with low collector-to-emitter saturation voltage and high-speed switching capabilities.

Operating Conditions:

Collector-to-Emitter Voltage (VCEO): 50 V
Operating junction temperature: up to 150 °C
Collector current: up to 15 A

Absolute Maximum Ratings:

Max Collector-to-Base Voltage (VCBO): 60 V
Max Collector-to-Emitter Voltage (VCES): 60 V
Max continuous Collector Current (IC): 15 A
Max Junction Temperature (Tj): 150 °C
Max Storage Temperature (Tstg): -55 to +150 °C

Key Specs:

Collector Cutoff Current (ICBO): 10 μA (V CB = 40 V, I E = 0 A)
DC Current Gain (HFE1): 200 min (V CE = 2 V, I C = 330 mA)
DC Current Gain (HFE2): 50 min (V CE = 2 V, I C = 10 A)
Gain-Bandwidth Product (fT): 195 MHz typ (V CE = 10 V, I C = 2 A)
Output Capacitance (Cob): 85 pF typ (V CB = 10 V, f = 1 MHz)
Collector-to-Emitter Saturation Voltage (VCE(sat)): 200 mV typ, 400 mV max (I C = 7.5 mA, I B = 375 mA)
Turn-On Time (ton): 52 ns typ
Fall Time (tf): 37 ns typ

Features:

Low Collector-to-Emitter Saturation Voltage
Adoption of MBIT Process
Large Current Capacitance
Pb-Free Device
High-Speed Switching

Applications:

High-Speed Switching Applications (Switching Regulator, Driver Circuit)

Package:

TO-220F-3SG (TO-220 Fullpack, 3-Lead)

Features

Low Collector -to -Emitter Saturation Voltage
Adoption of MBIT Process
Large Current Capacitance
This is a Pb -Free Device
High -Speed Switching

Applications

High -Speed Switching Applications (Switching Regulator, Driver Circuit)

Electrical Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
I CBO	Collector Cutoff Current	V CB = 40 V, I E = 0 A	-	-	10	μ A
I EBO	Emitter Cutoff Current	V EB = 4 V, I C = 0 A	-	-	10	μ A
H FE 1	DC Current Gain	V CE = 2 V, I C = 330 mA	200	-	560
H FE 2		V CE = 2 V, I C = 10 A	50	-	-
f T	Gain - Bandwidth Product	V CE = 10 V, I C = 2 A	-	195	-	MHz
Cob	Output Capacitance	V CB = 10 V, f = 1 MHz	-	85	-	pF
V CE (sat)	Collector - to - Emitter Saturation Voltage	I C = 7.5 mA, I B = 375 mA	-	200	400	mV
V BE (sat)	Base - to - Emitter Saturation Voltage	I C = 7.5 mA, I B = 375 mA	-	-	1.2	V
V (BR)CBO	Collector - to - Base Breakdown Voltage	I C = 100 m A, I E = 0 A	60	-	-	V
V (BR)CES	Collector - to - Emitter Breakdown Voltage	I C = 100 m A, R BE = 0 W	60	-	-	V
V (BR)CEO		I C = 1 mA, R BE = ∞	50	-	-	V
V (BR)EBO	Emitter - to - Base Breakdown Voltage	I E = 100 m A, I C = 0 A	5	-	-	V
t on	Turn - On Time	See specified Test Circuit		52	-	ns
t stg	Storage Time			560	-	ns
t f	Fall Time			37	-	ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Absolute Maximum Ratings

Symbol	Rating	Condition	Value	Unit
V CBO	Collector - to - Base Voltage		60	V
V CES	Collector - to - Emitter Voltage		60	V
V CEO			50	V
V EBO	Emitter - to - Base Voltage		6	V
I C	Collector Current		15	A
I CP	Collector Current (Pulse)	PW ≤ 10 μ s, duty cycle ≤ 1%	20	A
I B	Base Current		3	A
P C	Collector Dissipation		2	W
		T C = 25 ° C	23	W
Tj	Junction Temperature		150	° C
Tstg	Storage Temperature		- 55 to +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO -220 Fullpack, 3 -Lead / TO -220F -3SG CASE 221AT

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
2SC6082	onsemi	—

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