C5331602

The C5331602 is an electronic component. View the full C5331602 datasheet below including electrical characteristics, absolute maximum ratings.

Overview

Part: KSC3503 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High voltage (VCEO = 300 V), high frequency (150 MHz) NPN epitaxial silicon transistor with low reverse transfer capacitance, suitable for video output, audio, and general purpose amplifier applications.

Operating Conditions:

Operating temperature: -50 to +150 °C
Max DC collector current: 100 mA

Absolute Maximum Ratings:

Collector-Base Voltage (BV CBO): 300 V
Collector-Emitter Voltage (BV CEO): 300 V
Max continuous collector current: 100 mA
Max junction and storage temperature: -50 to +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (BV CEO): 300 V (min, at I C = 1 mA, I B = 0)
Collector-Base Breakdown Voltage (BV CBO): 300 V (min, at I C = 10 mA, I E = 0)
Emitter-Base Breakdown Voltage (BV EBO): 5 V (min, at I E = 10 mA, I C = 0)
DC Current Gain (h FE): 60 (min) to 120 (max) (at V CE = 10 V, I C = 10 mA)
Collector-Emitter Saturation Voltage (V CE(sat)): 0.6 V (max, at I C = 20 mA, I B = 2 mA)
Current Gain Bandwidth Product (f T): 150 MHz (typ, at V CE = 30 V, I C = 10 mA)
Output Capacitance (C ob): 1.8 pF (typ, at V CB = 30 V, f = 1 MHz)

Features:

High Voltage: VCEO = 300 V
Low Reverse Transfer Capacitance: Cre = 1.8 pF at V CB = 30 V
Excellent Gain Linearity for Low THD
Full Thermal and Electrical Spice Models are Available
High Frequency: 150 MHz
Complement to KSA1381
Pb-Free and RoHS Compliant

Applications:

CRT Display, Video Output
Audio, Voltage Amplifier and Current Source
General Purpose Amplifier

Package:

TO-126-3LD (Pb-Free)

Features

High Voltage: VCEO = 300 V
Low Reverse Transfer Capacitance: Cre = 1.8 pF at V CB = 30 V
·
Excellent Gain Linearity for Low THD
Full Thermal and Electrical Spice Models are Available
High Frequency: 150 MHz
Complement to KSA1381
These Devices are Pb -Free and are RoHS Compliant

Applications

CRT Display, Video Output
Audio, Voltage Amplifier and Current Source
General Purpose Amplifier

Electrical Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV CBO	Collector - Base Breakdown Voltage	I C = 10 m A, I E = 0	300			V
BV CEO	Collector - Emitter Breakdown Voltage	I C = 1 mA, I B = 0	300			V
BV EBO	Emitter - Base Breakdown Voltage	I E = 10 m A, I C = 0	5			V
I CBO	Collector Cut - Off Current	V CB = 200 V, I E = 0			0.1	m A
I EBO	Emitter Cut - Off Current	V EB = 4 V, I C = 0			0.1	m A
h FE	DC Current Gain	V CE = 10 V, I C = 10 mA	60		120
V CE (sat)	Collector - Emitter Saturation Voltage	I C = 20 mA, I B = 2 mA			0.6	V
V BE (sat)	Base - Emitter Saturation Voltage	I C = 20 mA, I B = 2 mA			1	V
f T	Current Gain Bandwidth Product	V CE = 30 V, I C = 10 mA		150		MHz
C ob	Output Capacitance	V CB = 30 V, f = 1 MHz		2.6		pF
C ob	Output Capacitance	V CB = 30 V, f = 1 MHz		1.8		pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Units
Collector - Base Voltage	BV CBO	300	V
Collector - Emitter Voltage	BV CEO	300	V
Emitter - Base Voltage	BV EBO	5	V
Collector Current (DC)	I C	100	mA
Collector Current (Pulse)	I CP	200	mA
Total Device Dissipation, T C = 25 ° C T C = 125 ° C	P C	7 1.2	W W
Junction and Storage Temperature	T J , T STG	- 50 ~ +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Thermal Information

(T A = 25 ° C unless otherwise noted)

Parameter	Symbol	Max.	Units
Thermal Resistance, Junction to Case	R q JC	17.8	° C/W

Device mounted on minimum pad size.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
KSC3503	onsemi	—

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