C40752
The C40752 is an electronic component. View the full C40752 datasheet below including electrical characteristics.
Overview
Part: BC546B, BC547A, B, C, BC548B, C — onsemi
Type: NPN Bipolar Junction Transistor (BJT)
Description: NPN Silicon Amplifier Transistors with collector-emitter breakdown voltages up to 65 V and DC current gain up to 800.
Operating Conditions:
- Ambient temperature for electrical characteristics: 25 °C (up to 125 °C for some parameters)
Key Specs:
- BC546 Collector-Emitter Breakdown Voltage (V_BR_CEO): 65 V min (I_C = 1.0 mA, I_B = 0)
- BC546 Collector-Base Breakdown Voltage (V_BR_CBO): 80 V min (I_C = 100 mA)
- Emitter-Base Breakdown Voltage (V_BR_EBO): 6.0 V min (I_E = 10 mA, I_C = 0)
- BC546B/547B/548B DC Current Gain (h_FE): 200 min (I_C = 2.0 mA, V_CE = 5.0 V)
- Collector-Emitter Saturation Voltage (V_CE(sat)): 0.25 V max (I_C = 10 mA, I_B = 0.5 mA)
- Base-Emitter Saturation Voltage (V_BE(sat)): 0.7 V typ (I_C = 10 mA, I_B = 0.5 mA)
- Current-Gain-Bandwidth Product (f_T): 150 MHz min (I_C = 10 mA, V_CE = 5.0 V, f = 100 MHz)
- Output Capacitance (C_obo): 1.7 pF typ (V_CB = 10 V, I_C = 0, f = 1.0 MHz)
Features:
- Pb-Free Packages are Available
Package:
- TO-92 (TO-226)
Features
- Pb -Free Packages are Available*
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector - Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0) | BC546 BC547 BC548 V (BR)CEO | 65 45 30 | - - - | - - - | V |
| Collector - Base Breakdown Voltage (I C = 100 m Adc) | BC546 BC547 BC548 V (BR)CBO | 80 50 30 | - - - | - - - | V |
| Emitter - Base Breakdown Voltage (I E = 10 m A, I C = 0) | BC546 BC547 BC548 V (BR)EBO | 6.0 6.0 6.0 | - - - | - - - | V |
| Collector Cutoff Current (V CE = 70 V, V BE = 0) (V CE = 50 V, V BE = 0) (V CE = 35 V, V BE = 0) (V CE = 30 V, T A = 125 ° C) | BC546 BC547 BC548 BC546/547/548 I CES | - - - - | 0.2 0.2 0.2 - | 15 15 15 4.0 | nA m A |
| ON CHARACTERISTICS | |||||
| DC Current Gain (I C = 10 m A, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) (I C = 100 mA, V CE = 5.0 V) | BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C h FE | - - - 110 110 110 110 200 420 - - - | 90 150 270 - - - 180 290 520 120 180 300 | - - - 450 800 800 220 450 800 - - - | - |
| Collector - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) (I C = 100 mA, I B = 5.0 mA) (I C = 10 mA, I B = See Note 1) | V CE(sat) | - - - | 0.09 0.2 0.3 | 0.25 0.6 0.6 | V |
| Base - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) | V BE(sat) | - | 0.7 | - | V |
| Base - Emitter On Voltage (I C = 2.0 mA, V CE = 5.0 V) | V BE(on) | 0.55 | - - | 0.7 0.77 | V |
| (I C = 10 mA, V CE = 5.0 V) | - | 300 300 | - | ||
| SMALL - SIGNAL CHARACTERISTICS | |||||
| Current - Gain - Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 100 MHz) | BC546 BC547 BC548 f T | 150 150 150 | 300 | - - | MHz |
| Output Capacitance (V CB = 10 V, I C = 0, f = 1.0 MHz) | C obo | - | 1.7 | 4.5 | pF |
| Input Capacitance (V EB = 0.5 V, I C = 0, f = 1.0 MHz) | C ibo | - | 10 | - | pF |
| Small - Signal Current Gain (I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547A | BC546B/547B/548B BC547C/548C h fe | 125 125 125 240 450 | - - 220 330 600 | 500 900 260 500 900 | - |
| Noise Figure (I C = 0.2 mA, V CE = 5.0 V, R S = 2 k W , f = 1.0 kHz, D f = 200 Hz) BC546 BC547 | BC548 NF | - - - | 2.0 2.0 2.0 | 10 10 10 | dB |
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