C3278637

Part: ISC027N10NM6 — Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 2.7 mΩ N-channel power MOSFET with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification, featuring very low on-resistance and 175°C operating temperature.

Operating Conditions:

• Supply voltage: 100 V (Drain-Source)
• Operating temperature: -55 to 175 °C
• Gate-source voltage: -20 to 20 V

Absolute Maximum Ratings:

• Max drain-source voltage: 100 V
• Max continuous drain current: 192 A (VGS=10 V, TC=25 °C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-source breakdown voltage V(BR)DSS: 100 V (VGS=0 V, ID=1 mA)
• Drain-source on-state resistance R DS(on): 2.7 mΩ (Max, VGS=10 V, ID=50 A)
• Gate threshold voltage V GS(th): 2.3 V (Min) to 3.3 V (Max) (VDS=VGS, ID=116 μA)
• Zero gate voltage drain current I DSS: 1.0 μA (Max, VDS=80 V, VGS=0 V, Tj=25 °C)
• Total gate charge Q g: 58 nC (Typ, VDD=50 V, ID=25 A, VGS=0 to 10 V)
• Output capacitance C oss: 960 pF (Typ, VGS=0 V, VDS=50 V, f=1 MHz)
• Reverse recovery charge Q rr: 62 nC (Typ)
• Transconductance g fs: 85 S (Typ)

Features:

• N-channel, normal-level
• Very low on-resistance RDS(on)
• Excellent gate-charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• High avalanche energy rating
• 175°C operating temperature
• Optimized for high-frequency switching and synchronous rectification
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• MSL-1 classified according to J-STD-020

Package:

• PG-TDSON-8 FL

• ·-N-channel,-normal-level
• ·-Very-low-on-resistance-RDS(on)
• ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
• ·-Very-low-reverse-recovery-charge-(Qrr)
• ·-High-avalanche-energy-rating
• ·-175°C-operating-temperature
• ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
• ·-Pb-free-lead-plating;-RoHS-compliant
• ·-Halogen-free-according-to-IEC61249-2-21
• ·-MSL-1-classified-according-to-J-STD-020