C2881912

Part: SPC584Bx — STMicroelectronics

Type: 32-bit Power Architecture microcontroller

Description: 32-bit Power Architecture microcontroller for automotive ASIL-B applications, featuring a 120 MHz e200z420 CPU, up to 2112 KB Flash, 128 KB SRAM, and extensive communication interfaces including Ethernet, MCAN (CAN-FD), LINFlexD, and DSPI.

Operating Conditions:

• Supply voltage: 1.335–1.400 V (Core voltage, for 60 seconds cumulative time)
• Operating temperature: -40 to 150 °C (Junction temperature range)
• Core frequency: up to 120 MHz

Absolute Maximum Ratings:

• Max supply voltage: 1.4 V (Core voltage operating life range), 6.0 V (I/O supply voltage, ADC Supply voltage, SAR ADC voltage reference)
• Max DC injection current for each analog/digital PAD: 5 mA
• Max junction/storage temperature: 150 °C (non-operating temperature during passive lifetime)

Key Specs:

• CPU Core: e200z420 32-bit Power Architecture
• Core Frequency: up to 120 MHz
• Flash Memory: up to 2112 KB (2048 KB code flash + 64 KB data flash)
• SRAM: 128 KB general-purpose SRAM + 64 KB core local data RAM
• ADC: 2 independent fast 12-bit SAR, 1 supervisor 12-bit SAR, 1 10-bit SAR
• Ethernet: 10/100 Mbps controller, IEEE 802.3-2008 compliant
• CAN: 8 MCAN interfaces with ISO CAN-FD support
• LIN/UART: 14 LINFlexD modules
• DSPI: 7 modules

Features:

• AEC-Q100 qualified
• ASIL-B of ISO 26262 safety concept
• Memory Error Management Unit (MEMU)
• Cyclic redundancy check (CRC) unit
• Enhanced low power support (STANDBY, Smart Wake-up Unit)
• Enhanced modular IO subsystem (eMIOS): up to 64 timed I/O channels
• Hardware security module (HSM) with HW cryptographic co-processor
• Nexus Development Interface (NDI) per IEEE-ISTO 5001-2003 standard

Applications:

• Automotive ASIL-B applications

Package:

• eTQFP64 (10 x 10 x 1.0 mm)
• eTQFP100 (14 x 14 x 1.0 mm)
• eTQFP144 (20 x 20 x 1.0 mm)
• eLQFP176 (24 x 24 x 1.4 mm)

• AEC-Q100 qualified

eTQFP100 (14 x 14 x 1.0 mm)

eTQFP100 (14 x 14 x 1.0 mm)

eTQFP176 (24 x 24 x 1.4 mm)

• High performance e200z420

• -32-bit Power Architecture technology CPU

• -Core frequency as high as 120 MHz

• -Variable Length Encoding (VLE)

• 2112 KB (2048 KB code flash + 64 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation

• 176 KB HSM dedicated flash memory (144 KB code + 32 KB data)

• 128 KB on-chip general-purpose SRAM (in addition to 64 KB core local data RAM

• Crossbar switch architecture for concurrent access to peripherals, Flash, or RAM from multiple bus masters with end-to-end ECC

• Multi-channel direct memory access controller (eDMA) with 64 channels

• 1 interrupt controller (INTC)

• Comprehensive new generation ASIL-B safety concept

• -ASIL-B of ISO 26262

• -FCCU for collection and reaction to failure notifications

• Boot Assist Flash (BAF) supports factory programming using a serial bootload through the asynchronous CAN or LIN/UART

• Junction temperature range -40 °C to 150 °C

Table 1. Device summary

Table 1. Device summary

The following table provides input DC electrical characteristics, as described in Figure 3 .

Figure 3. I/O input electrical characteristics

Table 4 describes the maximum ratings for the device. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Stress beyond the listed maxima, even momentarily, may affect device reliability or cause permanent damage to the device.

Table 4. Absolute maximum ratings

Table 4. Absolute maximum ratings

16

Table 4. Absolute maximum ratings (continued)

1. VDD_LV : allowed 1.335 V - 1.400 V for 60 seconds cumulative time at the given temperature profile. Remaining time allowed 1.260 V - 1.335 V for 10 hours cumulative time at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions .
2. VDD_HV : allowed 5.5 V - 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating conditions .
3. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal calculations.
4. Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
5. This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum limits to the transition time.
6. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in Section 4.8.3: I/O pad current specifications .
7. 175 °C are allowed for limited time. Mission profile with passive lifetime temperature >150 °C have to be evaluated by ST to confirm that are granted by product qualification.
8. Solder profile per IPC/JEDEC J-STD-020D.
9. Moisture sensitivity per JDEC test method A112.

The following tables describe the thermal characteristics of the device. The parameters in this chapter have been evaluated by considering the device consumption configuration reported in the Section 4.7: Device consumption .

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.

The following table lists the case numbers for SPC584Bx.

Table 60. Package case numbers