C23380874

The C23380874 is an electronic component. View the full C23380874 datasheet below including electrical characteristics, absolute maximum ratings.

Overview

Part: KSC2383 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: 160 V Collector-Emitter Voltage, 1 A Collector Current NPN Epitaxial Silicon Transistor.

Operating Conditions:

Collector-Emitter Voltage: up to 160 V
Collector Current: up to 1 A
Operating temperature: -55 to +150 °C
Power Dissipation: 900 mW (at T_A = 25 °C)

Absolute Maximum Ratings:

Max Collector-Base Voltage: 160 V
Max Collector-Emitter Voltage: 160 V
Max Emitter-Base Voltage: 6 V
Max Collector Current: 1 A
Max Base Current: 0.5 A
Max Junction Temperature: 150 °C
Max Storage Temperature: -55 to +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (BV_CEO): 160 V (min) at I_C = 10 mA, I_B = 0
DC Current Gain (h_FE): 60 (min) to 320 (max) at V_CE = 5 V, I_C = 200 mA
Collector Cut-Off Current (I_CBO): 1 mA (max) at V_CB = 150 V, I_E = 0
Collector-Emitter Saturation Voltage (V_CE(sat)): 1.5 V (max) at I_C = 500 mA, I_B = 50 mA
Base-Emitter On Voltage (V_BE(on)): 0.45 V (min) to 0.75 V (max) at V_CE = 5 V, I_C = 5 mA
Current Gain Bandwidth Product (f_T): 20 MHz (min) at V_CE = 5 V, I_C = 200 mA
Output Capacitance (C_ob): 20 pF (max) at V_CB = 10 V, I_E = 0, f = 1 MHz

Features:

NPN Epitaxial Silicon Transistor
hFE Classification (R, O, Y)

Package:

TO-92 3 LF (Pb-Free)

Electrical Characteristics

(Values are at T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
I CBO	Collector Cut-Off Current	V CB = 150 V, I E = 0	-	-	1	m A
I EBO	Emitter Cut-Off Current	V EB = 6 V, I C = 0	-	-	1	m A
BV CEO	Collector-Emitter Breakdown Voltage	I C = 10 mA, I B = 0	160	-	-	V
h FE	DC Current Gain	V CE = 5 V, I C = 200 mA	60	-	320
V CE (sat)	Collector-Emitter Saturation Voltage	I C = 500 mA, I B = 50 mA	-	-	1.5	V
V BE (on)	Base-Emitter On Voltage	V CE = 5 V, I C = 5 mA	0.45	-	0.75	V
f T	Current Gain Bandwidth Product	V CE = 5 V, I C = 200 mA	20	100	-	MHz
C ob	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz	-	-	20	pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

hFE CLASSIFICATION

Classification	R	O	Y
h FE	60 ~ 120	100 ~ 200	160 ~ 320

Absolute Maximum Ratings

(Values are at T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Value	Unit
V CBO	Collector-Base Voltage	160	V
V CEO	Collector-Emitter Voltage	160	V
V EBO	Emitter-Base Voltage	6	V
I C	Collector Current	1	A
I B	Base Current	0.5	A
T J	Junction Temperature	150	° C
T STG	Storage Temperature	-55 to +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Thermal Information

(Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

Symbol	Parameter	Value	Unit
P D	Power Dissipation	900	mW
	Derate Above 25 _ C	7.2	mW/ ° C
R θ JA	Thermal Resistance, Junction-to-Ambient	138	° C/W

TO-92 3 LF CASE 135AM

= Assembly Code

C2383

= Device Code

= O / Y

YWW

= Date Code

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
KSC2383	onsemi	—

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free