KSC2383

Part: KSC2383 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High voltage NPN epitaxial silicon transistor with 160 V Collector-Emitter Voltage and 1 A Collector Current, available in a TO-92 package.

Operating Conditions:

• Max Collector-Emitter Voltage: 160 V
• Operating temperature: -55 to +150 °C
• Max Collector Current: 1 A

Absolute Maximum Ratings:

• Max Collector-Base Voltage: 160 V
• Max continuous Collector Current: 1 A
• Max junction temperature: 150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage (BV_CEO): 160 V (min, at I_C = 10 mA, I_B = 0)
• DC Current Gain (h_FE): 60 (min, at V_CE = 5 V, I_C = 200 mA)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.5 V (max, at I_C = 500 mA, I_B = 50 mA)
• Base-Emitter On Voltage (V_BE(on)): 0.45 V (min) to 0.75 V (max, at V_CE = 5 V, I_C = 5 mA)
• Current Gain Bandwidth Product (f_T): 20 MHz (min, at V_CE = 5 V, I_C = 200 mA)
• Output Capacitance (C_ob): 20 pF (max, at V_CB = 10 V, I_E = 0, f = 1 MHz)
• Collector Cut-Off Current (I_CBO): 1 mA (max, at V_CB = 150 V, I_E = 0)

Features:

• High Collector-Emitter Voltage (160 V)
• High Collector Current (1 A)
• Pb-Free package
• hFE classified for specific gain ranges

Package:

• TO-92 3 LF

(Values are at T A = 25 ° C unless otherwise noted.)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

hFE CLASSIFICATION

(Values are at T A = 25 ° C unless otherwise noted.)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

TO-92 3 LF CASE 135AM

A

= Assembly Code

C2383

= Device Code

X

= O / Y

YWW

= Date Code