C2057475
The C2057475 is an electronic component. View the full C2057475 datasheet below including electrical characteristics, absolute maximum ratings.
Overview
Part: BC327 — onsemi
Type: PNP Epitaxial Silicon Transistor
Description: PNP Epitaxial Silicon Transistor suitable for switching and amplifier applications, featuring a Collector-Emitter breakdown voltage of -45 V and a maximum DC Collector Current of -800 mA.
Operating Conditions:
- Collector-Emitter Voltage: up to -45 V
- Operating temperature: -55 to +150 °C
- Collector Current: up to -800 mA
Absolute Maximum Ratings:
- Max Collector-Emitter Voltage (V_CES): -50 V
- Max Collector Current (DC): -800 mA
- Max Junction Temperature (T_J): 150 °C
- Max Storage Temperature (T_STG): -55 to +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (BV_CEO): -45 V (I_C = -10 mA, I_B = 0)
- Emitter-Base Breakdown Voltage (BV_EBO): -5 V (I_E = -10 mA, I_C = 0)
- Collector Cut-Off Current (I_CES): Max -100 nA (V_CE = -45 V, I_B = 0)
- DC Current Gain (h_FE1): 100 to 630 (V_CE = -1 V, I_C = -100 mA)
- Collector-Emitter Saturation Voltage (V_CE(sat)): Max -0.7 V (I_C = -500 mA, I_B = -50 mA)
- Base-Emitter On Voltage (V_BE(on)): Max -1.2 V (V_CE = -1 V, I_C = -300 mA)
- Current Gain Bandwidth Product (f_T): Typ 100 MHz (V_CE = -5 V, I_C = -10 mA, f = 20 MHz)
- Output Capacitance (C_ob): Typ 12 pF (V_CB = -10 V, I_E = 0, f = 1 MHz)
Features:
- Switching and Amplifier Applications
- Suitable for AF -Driver Stages and Low -Power Output Stages
- Complement to BC337/BC338
- Pb -Free Devices
Applications:
- AF -Driver Stages
- Low -Power Output Stages
Package:
- TO-92 3
- TO-92 3 LF
Features
- Switching and Amplifier Applications
- Suitable for AF -Driver Stages and Low -Power Output Stages
- Complement to BC337/BC338
- These are Pb -Free Devices
Electrical Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BV CEO | Collector - Emitter Breakdown Voltage | I C = - 10 mA, I B = 0 | - 45 | - | - | V |
| BV CES | Collector - Emitter Breakdown Voltage | I C = - 0.1 mA, V BE = 0 | - 50 | - | - | V |
| BV EBO | Emitter - Base Breakdown Voltage | I E = - 10 m A, I C = 0 | - 5 | - | - | V |
| I CES | Collector Cut - Off Current | V CE = - 45 V, I B = 0 | - | - 2 | - 100 | nA |
| h FE1 | DC Current Gain | V CE = - 1 V, I C = - 100 mA | 100 | - | 630 | |
| h FE2 | V CE = - 1 V, I C = - 300 mA | 60 | - | |||
| V CE (sat) | Collector - Emitter Saturation Voltage | I C = - 500 mA, I B = - 50 mA | - | - | - 0.7 | V |
| V BE (on) | Base - Emitter On Voltage | V CE = - 1 V, I C = - 300 mA | - | - | - 1.2 | V |
| f T | Current Gain Bandwidth Product | V CE = - 5 V, I C = - 10 mA, f = 20 MHz | - | 100 | - | MHz |
| C ob | Output Capacitance | V CB = - 10 V, I E = 0, f = 1 MHz | - | 12 | - | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Absolute Maximum Ratings
(T A = 25 C unless otherwise noted.)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V CES | Collector - Emitter Voltage | - 50 | V |
| V CEO | Collector - Emitter Voltage | - 45 | V |
| V EBO | Emitter - Base Voltage | - 5 | V |
| I C | Collector Current (DC) | - 800 | mA |
| T J | Junction Temperature | 150 | C |
| T STG | Storage Temperature | - 55 to +150 | C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Information
(T A = 25 C unless otherwise noted.) (Note 1)
| Symbol | Characteristic | Value | Unit |
|---|---|---|---|
| P D | Power Dissipation Derate Above 25 C | 625 5.0 | mW mW/ C |
| R q JA | Thermal Resistance, Junction to Ambient | 200 | C/W |
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