BQ25628RYKR
Synchronous Buck ChargerThe BQ25628RYKR is a synchronous buck charger from Texas Instruments. View the full BQ25628RYKR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Synchronous Buck Charger
Package
18-PowerWFQFN
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Battery Chemistry | Lithium Ion/Polymer |
| Battery Pack Voltage | 4.8V (Max) |
| Battery Pack Voltage | 4.8V (Max) |
| Charge Current (Max) | 2A |
| Current - Charging | Constant - Programmable |
| Current - Charging | Constant - Programmable |
| Fault Protection | Over Current, Over Temperature, Over-Under Voltage, Short Circuit |
| Fault Protection | Over Current, Over Temperature, Over-Under Voltage, Short Circuit |
| Interface | I2C |
| Mounting Type | Surface Mount |
| Number of Cells | 1 |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 18-PowerWFQFN |
| Programmable Features | Current, Timer, Voltage |
| Programmable Features | Current, Timer, Voltage |
| Supplier Device Package | 18-WQFN-HR (3x2.5) |
| Supplier Device Package | 18-WQFN-HR (3x2.5) |
| Input Voltage (Max) | 18V |
Overview
Part: BQ25628, BQ25629 — Texas Instruments
Type: I2C Controlled, Synchronous Switching Mode Buck Charger
Description: Highly-integrated 2-A switch-mode battery charge management and system power path management device for single cell Li-ion and Li-polymer batteries, supporting 3.9–18 V input, with >90% efficiency and NVDC power path management.
Operating Conditions:
- Supply voltage: 3.9–18 V
- Operating temperature: -40 to 85 °C
- Battery voltage: up to 4.8 V
- Fast charging current: up to 3.5 A
Absolute Maximum Ratings:
- Max supply voltage (VBUS): 26 V
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
Key Specs:
- Input operating voltage range: 3.9 V to 18 V
- Charge current regulation accuracy: ±5%
- Charge voltage regulation accuracy: ±0.4%
- Quiescent current in battery only mode: 1.5 μA
- Battery leakage current in ship mode: 0.15 μA
- Boost mode output voltage range: 3.84 V to 5.2 V
- Switching frequency: 1.5 MHz
- BATFET on-resistance: 15 mΩ
Features:
- High-efficiency synchronous switching mode buck charger
- Narrow VDC (NVDC) power path management
- Flexible autonomous or I2C-controlled modes
- Integrated 12-bit ADC for monitoring
- Boost Mode operation for accessory power
- Supports a wide range of input sources with VINDPM and IINDPM
- Various safety features: thermal regulation, OVP, OCP, safety timer
- BATFET control for shutdown, ship mode, and system reset
Applications:
- Consumer Wearables, Smartwatch
- Portable Speakers, TWS Earphone
- Hearing Aid or TWS Charging Case
Package:
- WQFN (18) - 2.50 mm × 3.00 mm
Features
- High-efficiency, 1.5-MHz, synchronous switching mode buck charger for single cell battery
- ->90% efficiency down to 25-mA output current from 5-V input
- -Charge termination from
- -Flexible JEITA profile for safe charging over temperature
- BATFET control to support shutdown, ship mode and full system reset
- -1.5-μA quiescent current in battery only mode
- -0.15-μA battery leakage current in ship mode
- -0.1-μA battery leakage current in shutdown
- Supports Boost Mode operation to power accesory
- -Boost Mode operation supporting 3.84-V to 5.2V output
- ->90% boost efficiency down to 100-mA boost current for 5-V PMID
- Supports a wide range of input sources
- -3.9-V to 18-V wide input operating voltage range with 26-V absolute maximum input voltage
- -Maximizes source power with input voltage regulation (VINDPM) and input current regulation (IINDPM)
- -VINDPM threshold automatically tracks battery voltage
- Efficient battery operation with 15-mΩ BATFET
- Narrow VDC (NVDC) power path management
- -System instant-on with depleted or no battery
- -Battery supplement when adapter is fully loaded
- Flexible autonomous or I 2 C-controlled modes
- Integrated 12-bit ADC for voltage, current, temperature monitoring
- High Accuracy
- -±0.4% charge voltage regulation
- -±5% charge current regulation
- -±5% input current regulation
- Safety
- -Thermal regulation and thermal shutdown
- -Input, system, and battery overvoltage protection
- -Battery, and converter overcurrent protection
- -Charging safety timer
Applications
- Consumer Wearables, Smartwatch
- Portable Speakers, TWS Earphone
- Hearing Aid or TWS Charging Case
Pin Configuration
Figure 7-1. BQ25628 Pinout, 18-Pin WQFN Top View
Figure 7-2. BQ25629 Pinout, 18-Pin WQFN Top View
Table 7-1. Pin Functions
| NAME | NAME | NO. | (1) |
|---|---|---|---|
| BQ25628 | BQ25629 | TYPE | |
| BTST | BTST | 1 | P |
| REGN | REGN | 2 | P |
Electrical Characteristics
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS |
| I Q_BAT | Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC disabled, system is powered by battery. -40 °C < T J < 60 °C | 1.5 | 3 | μA | |
| I Q_BAT_ADC | Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is enabled | VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC enabled, system is powered by battery. -40 °C < T J < 60 °C | 260 | μA | ||
| I Q_BAT_SD | Quiescent battery current (BAT) when the charger is in shutdown mode, BATFET is disabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in shutdown mode, ADC disabled, T J < 60 °C | 0.1 | 0.2 | μA | |
| I Q_BAT_SHIP | Quiescent battery current (BAT) when the charger is in ship mode, BATFET is disabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in ship mode, ADC disabled, T J < 60 °C | 0.15 | 0.5 | μA | |
| I Q_VBUS | Quiescent input current (VBUS) | VBUS = 5V, VBAT = 4V, charge disabled, converter switching, ISYS = 0A, PFM enabled | 450 | μA | ||
| I Q_VBUS_HIZ | Quiescent input current (VBUS) in HIZ | VBUS = 5V, VBAT = 4V, HIZ mode, ADC disabled | 5 | 20 | μA | |
| I Q_VBUS_HIZ | Quiescent input current (VBUS) in HIZ | VBUS = 15V, VBAT = 4V, HIZ mode, ADC disabled | 20 | 35 | μA | |
| I Q_BOOST | Quiescent battery current (BAT, SYS, SW) in boost mode | VBAT = 4.2V, VPMID = 5V, Boost mode enabled, converter switching, PFM enabled, I VPMID = 0A | 220 | μA | ||
| I Q_BYP_OTG | Quiescent battery current (BAT, SYS) in bypass OTG mode | VBAT = 4V, bypass OTG mode enabled, IPMID = 0A | 500 | 850 | μA | |
| VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY | VBUS / VBAT SUPPLY |
| V VBUS_OP | VBUS operating range | 3.9 | 18 | V | ||
| V VBUS_UVLO | VBUS falling to turn off I2C, no battery | VBUS falling | 3.0 | 3.15 | 3.3 | V |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V VBUS_UVLOZ | VBUS rising for active I2C, no battery | VBUS rising | 3.2 | 3.35 | 3.5 | V |
| V VBUS_OVP | VBUS overvoltage rising threshold | VBUS rising, VBUS_OVP = 0 | 6.1 | 6.4 | 6.7 | V |
| V VBUS_OVPZ | VBUS overvoltage falling hreshold | VBUS rising, VBUS_OVP = 0 | 5.8 | 6.0 | 6.2 | V |
| V VBUS_OVP | VBUS overvoltage rising threshold | VBUS rising, VBUS_OVP = 1 | 18.2 | 18.5 | 18.8 | V |
| V VBUS_OVPZ | VBUS overvoltage falling threshold | VBUS falling, VBUS_OVP = 1 | 17.4 | 17.7 | 18.0 | V |
| V PMID_OVP | Forward mode PMID OVP to drive PMID_GD low | V PMID rising | 5.5 | 5.75 | 6.0 | V |
| V PMID_OVPZ | Forward mode PMID voltage threshold to exit OVP and drive PMID_GD high | V PMID falling | 5.25 | 5.5 | 5.75 | V |
| V SLEEP | Enter Sleep mode threshold | (VBUS - VBAT), VBUS falling | 9 | 45 | 85 | mV |
| V SLEEPZ | Exit Sleep mode threshold | (VBUS - VBAT), VBUS rising | 115 | 220 | 340 | mV |
| V BAT_UVLOZ | BAT voltage for active I2C, turn on BATFET, no VBUS | VBAT rising | 2.3 | 2.4 | 2.5 | V |
| BAT voltage to turnoff I2C, turn off | VBAT falling, VBAT_UVLO = 0 | 2.1 | 2.2 | 2.3 | V | |
| V BAT_UVLO | BATFET, no VBUS | VBAT falling, VBAT_UVLO = 1 | 1.7 | 1.8 | 1.9 | V |
| V BAT_OTG | BAT voltage rising threshold to enable OTG mode | VBAT rising, VBAT_OTG_MIN = 0 VBAT rising, VBAT_OTG_MIN = 1 | 2.9 2.5 | 3.0 2.6 | 3.1 2.7 | V V |
| BAT voltage falling threshold to | VBAT falling, VBAT_OTG_MIN = 0 | 2.7 | 2.8 | 2.9 | V | |
| V BAT_OTGZ | disable OTG mode | VBAT falling, VBAT_OTG_MIN = 1 | 2.3 | 2.4 | 2.5 | V |
| V POORSRC | Bad adapter detection threshold | VBUS falling | 3.6 | 3.7 | V | |
| I POORSRC | Bad adapter detection current source | 10 | mA | |||
| POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT |
| V SYS_REG_ACC | Typical system voltage regulation | ISYS = 0A, VBAT > VSYSMIN, Charge Disabled. Offset above VBAT | 50 | mV | ||
| Typical system voltage regulation | ISYS = 0A, V BAT < VSYSMIN, Charge Disabled. Offset above VSYSMIN | 230 | mV | |||
| V SYSMIN_RNG | VSYSMIN register range | 2.56 | 3.84 | V | ||
| V SYSMIN_REG_STEP | VSYSMIN register step size | 80 | mV | |||
| V SYSMIN_REG_ACC | Minimum DC system voltage output | ISYS = 0A, V BAT < VSYSMIN = B00h (3.52V), Charge Disabled | 3.52 | 3.75 | V | |
| V SYS_SHORT | VSYS short voltage falling threshold to enter forced PFM | 0.9 | V | |||
| V SYS_SHORTZ | VSYS short voltage rising threshold to exit forced PFM | 1.1 | V | |||
| BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER |
| V REG_RANGE | Typical charge voltage regulation range | 3.50 | 4.80 | V | ||
| V REG_STEP | Typical charge voltage step | 10 | mV | |||
| V | T J = 25°C | -0.3 | 0.3 | % | ||
| REG_ACC I CHG_RANGE | Charge voltage accuracy Typical charge current regulation range | T J = -10°C - 85°C | -0.4 0.04 | 0.4 2.00 | % A | |
| I CHG_STEP | Typical charge current regulation step | 40 | mA |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| I CHG_ACC | Charge current accuracy | VBAT = 3.1V or 3.8V, ICHG = 1040mA, T = -10°C - 85°C | -5.5 | 5.5 | % | |
| I CHG_ACC | Charge current accuracy | VBAT = 3.1V or 3.8V, ICHG = 320mA, T J = -10°C - 85°C | -5.5 | 5.5 | % | |
| I CHG_ACC | Charge current accuracy | VBAT = 3.1V or 3.8V, ICHG = 240mA, T J = -10°C - 85°C | -10 | 10 | % | |
| I CHG_ACC | Charge current accuracy | VBAT = 3.1V or 3.8V, ICHG = 80mA, T J = -10°C - 85°C | 60 | 80 | 100 | mA |
| I PRECHG_RANGE | Typical pre-charge current range | 10 | 310 | mA | ||
| I PRECHG_STEP | Typical pre-charge current step | 10 | mA | |||
| I PRECHG_STEP | VBAT = 2.5V, IPRECHG = 250mA, T J = -10°C - 85°C | -12 | 12 | % | ||
| I PRECHG_ACC | Pre-charge current accuracy when V BAT below V SYSMIN setting | VBAT = 2.5V, IPRECHG = 100mA, T J = -10°C - 85°C | -15 | 15 | % | |
| I PRECHG_ACC | Pre-charge current accuracy when V BAT below V SYSMIN setting | VBAT = 2.5V, IPRECHG = 50mA, T J = - 10°C - 85°C | -25 | 25 | % | |
| I TERM_RANGE | Typical termination current range | 5 | 310 | mA | ||
| I TERM_STEP | Typical termination current step | 5 | mA | |||
| I TERM_ACC | Termination current accuracy | ITERM = 10mA, T J = -10°C - 85°C | -80 | 80 | % | |
| I TERM_ACC | Termination current accuracy | ITERM = 50mA, T J = -10°C - 85°C | -17 | 17 | % | |
| V BAT_SHORTZ | Battery short voltage rising threshold to start pre-charge | VBAT rising | 2.25 | V | ||
| V BAT_SHORT | Battery short voltage falling threshold to stop pre-charge | VBAT falling, VBAT_UVLO=0 | 2.05 | V | ||
| V BAT_SHORT | Battery short voltage falling threshold to stop pre-charge | VBAT falling, VBAT_UVLO=1 | 1.85 | V | ||
| I | Battery short trickle charging | VBAT < V BAT_SHORTZ , ITRICKLE = 0 | 5 | 10 | 17 | mA |
| BAT_SHORT | current | VBAT < V BAT_SHORTZ , ITRICKLE = 1 | 28 | 40 | 52 | mA |
| V BAT_LOWVZ | Battery voltage rising threshold | Transition from pre-charge to fast charge | 2.9 | 3.0 | 3.1 | V |
| V BAT_LOWV | Battery voltage falling threshold | Transition from fast charge to pre-charge | 2.7 | 2.8 | 2.9 | V |
| V | Battery recharge threshold below | VBAT falling, VRECHG = 0 | 100 | mV | ||
| RECHG I PMID_LOAD | V REG PMID discharge load current | VBAT falling, VRECHG = 1 | 20 | 200 30 | mV mA | |
| I BAT_LOAD | Battery discharge load current | 20 | 30 | mA | ||
| I SYS_LOAD | System discharge load current | 20 | 30 | mA | ||
| BATFET | ||||||
| R BATFET | MOSFET on resistance from SYS to BAT | 15 | 25 | mΩ | ||
| BATTERY PROTECTIONS | BATTERY PROTECTIONS | |||||
| V BAT_OVP | Battery overvoltage rising threshold | As percentage of VREG | 103 | 104 | 105 | % |
| V BAT_OVPZ | Battery overvoltage falling threshold | As percentage of VREG | 101 | 102 | 103 | % |
| I BATFET_OCP | BATFET over-current rising threshold | 6 | A |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| IBAT_PK = 00 | 1.5 | A | ||||
| I BAT_PK | Battery discharging peak current rising threshold | IBAT_PK = 01 IBAT_PK = 10 IBAT_PK = 11 | 3 6 12 | A A A | ||
| INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION |
| V INDPM_RANGE | Typical input voltage regulation range | 3.8 | 16.8 | V | ||
| V INDPM_STEP | Typical input voltage regulation step | 40 | mV | |||
| VINDPM=4.6V | -4 | 4 | % | |||
| V INDPM_ACC | Input voltage regulation accuracy | VINDPM=8V | -3 | 3 | % | |
| VINDPM=16V | -2 | 2 | % | |||
| V INDPM_BAT_TRACK | Battery tracking VINDPM accuracy | VBAT = 3.9V, VINDPM_BAT_TRACK=1, VINDPM = 4V | 4.15 | 4.3 | 4.45 | V |
| I INDPM_RANGE | Typical input current regulation range | 0.1 | 3.2 | A | ||
| I INDPM_STEP | Typical input current regulation step | 20 | mA | |||
| IINDPM = 500mA, VBUS=5V | 450 | 475 | 500 | mA | ||
| I INDPM_ACC | Input current regulation accuracy | IINDPM = 900mA, VBUS=5V | 810 | 855 | 900 | mA |
| IINDPM = 1500mA, VBUS=5V | 1350 | 1425 | 1500 | mA | ||
| I VBUS_OCP | Forwrad mode VBUS overcurrent to drive PMID_GD low as a percentage of IINDPM | As a percentage of IINDPM | 108 | % | ||
| K ILIM | ILIM Pin Scale Factor, IINREG = K ILIM / R ILIM | INREG = 1.6 A | 2250 | 2500 | 2750 | AΩ |
| D+ / D- DETECTION | D+ / D- DETECTION | D+ / D- DETECTION | D+ / D- DETECTION | D+ / D- DETECTION | D+ / D- DETECTION | D+ / D- DETECTION |
| V D+D-_0p6V_SRC | D+/D- voltage source (600 mV) | 1 mA load on D+/D- | 400 | 600 | 800 | mV |
| I D+D-_LKG | Leakage current into D+/D- | HiZ mode | -1 | 1 | μA | |
| V D+D-_2p8 | D+/D- comparator threshold for non-standard adapter | 2.55 | 2.85 | V | ||
| V D+D-_2p0 | D+/D- comparator threshold for non-standard adapter | 1.85 | 2.15 | V | ||
| THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN |
| T | Junction temperature regulation | TREG = 1 | 120 | °C | ||
| REG | accuracy | TREG = 0 | 60 | °C | ||
| T SHUT | Thermal Shutdown Rising Threshold | Temperature Increasing | 140 | °C | ||
| T SHUT_HYS | Thermal Shutdown Falling Hysteresis | Temperature Decreasing by T SHUT_HYS | 30 | °C | ||
| THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) | THERMISTOR COMPARATORS (CHARGE MODE) |
| V TS_COLD | TS pin rising voltage threshold for TH1 comparator to | As Percentage to TS pin bias reference (-5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110 | 75.0 | 75.5 | 76.0 | % |
| V TS_COLD | transition from TS_COOL to TS_COLD. Charge suspended above this voltage. | As Percentage to TS pin bias reference (0°C w/ 103AT), Fixed JEITA threshold or TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111 | 72.8 | 73.3 | 73.8 | % |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V TS_COLDZ | TS pin falling voltage threshold for TH1 comparator to transition from TS_COLD to TS_COOL. TS_COOL charge settings resume below this voltage. | As Percentage to TS pin bias reference (-2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110 | 73.9 | 74.4 | 74.9 | % |
| V TS_COLDZ | TS pin falling voltage threshold for TH1 comparator to transition from TS_COLD to TS_COOL. TS_COOL charge settings resume below this voltage. | As Percentage to TS pin bias reference (2.5°C w/ 103AT), Fixed JEITA threshold or TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111 | 71.7 | 72.2 | 72.7 | % |
| V TS_COOL | TS pin rising voltage threshold for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage. | As Percentage to TS pin bias reference (5°C w/ 103AT), TS_ISET_COOL = 00 or TS_TH1_TH2_TH3 = 000, 100 | 70.6 | 71.1 | 71.6 | % |
| V TS_COOL | TS pin rising voltage threshold for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage. | As Percentage to TS pin bias reference (10°C w/ 103AT), TS_ISET_COOL = 01 or TS_TH1_TH2_TH3 = 001, 101, 110, 111 | 67.9 | 68.4 | 68.9 | % |
| V TS_COOL | TS pin rising voltage threshold for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage. | As Percentage to TS pin bias reference (15°C w/ 103AT), TS_ISET_COOL = 10 or TS_TH1_TH2_TH3 = 010 | 65 | 65.5 | 66 | % |
| V TS_COOL | TS pin rising voltage threshold for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage. | As Percentage to TS pin bias reference (20°C w/ 103AT), TS_ISET_COOL = 11 or TS_TH1_TH2_TH3 = 011 | 61.9 | 62.4 | 62.9 | % |
| V TS_COOLZ | TS pin falling voltage threshold for TH2 comparator to transition from TS_COOL to TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage. | As Percentage to TS pin bias reference (7.5°C w/ 103AT), TS_ISET_COOL = 00 or TS_TH1_TH2_TH3 = 000, 100 | 69.3 | 69.8 | 70.3 | % |
| V TS_COOLZ | TS pin falling voltage threshold for TH2 comparator to transition from TS_COOL to TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage. | As Percentage to TS pin bias reference (12.5°C w/ 103AT), TS_ISET_COOL = 01 or TS_TH1_TH2_TH3 = 001, 101, 110, 111 | 66.6 | 67.1 | 67.6 | % |
| V TS_COOLZ | TS pin falling voltage threshold for TH2 comparator to transition from TS_COOL to TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage. | As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_ISET_COOL = 10 or TS_TH1_TH2_TH3 = 010 | 63.7 | 64.2 | 64.7 | % |
| V TS_COOLZ | TS pin falling voltage threshold for TH2 comparator to transition from TS_COOL to TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage. | As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_ISET_COOL = 11 or TS_TH1_TH2_TH3 = 011 | 60.6 | 61.1 | 61.6 | % |
| V TS_PRECOOL | TS pin rising voltage threshold for TH3 comparator to transition from TS_NORMAL to TS_PRECOOL. TS_PRECOOL charge settings used above this voltage. | As Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101 | 65 | 65.5 | 66 | % |
| V TS_PRECOOL | TS pin rising voltage threshold for TH3 comparator to transition from TS_NORMAL to TS_PRECOOL. TS_PRECOOL charge settings used above this voltage. | As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111 | 61.9 | 62.4 | 62.9 | % |
| TS pin falling voltage threshold for TH3 comparator to transition from TS_PRECOOL to TS_NORMAL. Normal charging resumes below this voltage. | As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101 | 63.7 | 64.2 | 64.7 | % | |
| TS pin falling voltage threshold for TH3 comparator to transition from TS_PRECOOL to TS_NORMAL. Normal charging resumes below this voltage. | As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111 | 60.6 | 61.1 | 61.6 | % | |
| V TS_PREWARM | TS pin falling voltage threshold for TH4 comparator to transition from TS_NORMAL to TS_PREWARM. TS_PREWARM charging settings used below this | As Percentage to TS pin bias reference (35°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101 | 51.5 | 52 | 52.5 | % |
| V TS_PREWARM | voltage. | As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111 | 47.9 | 48.4 | 48.9 | % |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V TS_PREWARMZ | TS pin rising voltage threshold for TH4 comparator to transition from TS_PREWARM to TS_NORMAL. Normal charging resumes above this voltage. | As Percentage to TS pin bias reference (32.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101 | 53.3 | 53.8 | 54.3 | % |
| V TS_PREWARMZ | TS pin rising voltage threshold for TH4 comparator to transition from TS_PREWARM to TS_NORMAL. Normal charging resumes above this voltage. | As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111 | 49.2 | 49.7 | 50.2 | % |
| V TS_WARM | TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage. | As Percentage to TS pin bias reference (40°C w/ 103AT), TS_ISET_WARM = 00 or TS_TH4_TH5_TH6 = 000, 100 | 47.9 | 48.4 | 48.9 | % |
| V TS_WARM | TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage. | As Percentage to TS pin bias reference (45°C w/ 103AT), TS_ISET_WARM = 01 or TS_TH4_TH5_TH6 = 001, 101, 110 | 44.3 | 44.8 | 45.3 | % |
| V TS_WARM | TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage. | As Percentage to TS pin bias reference (50°C w/ 103AT), TS_ISET_WARM = 10 or TS_TH4_TH5_TH6 = 010, 111 | 40.7 | 41.2 | 41.7 | % |
| V TS_WARM | TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage. | As Percentage to TS pin bias reference (55°C w/ 103AT), TS_ISET_WARM = 11 or TS_TH4_TH5_TH6 = 011 | 37.2 | 37.7 | 38.2 | % |
| V TS_WARMZ | TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_ISET_WARM = 00 or TS_TH4_TH5_TH6 = 000, 100 | 49.2 | 49.7 | 50.2 | % |
| V TS_WARMZ | TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (42.5°C w/ 103AT), TS_ISET_WARM = 01 or TS_TH4_TH5_TH6 = 001, 101, 110 | 45.6 | 46.1 | 46.6 | % |
| V TS_WARMZ | TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_ISET_WARM = 10 or TS_TH4_TH5_TH6 = 010, 111 | 42.0 | 42.5 | 43.0 | % |
| V TS_WARMZ | TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (52.5°C w/ 103AT), TS_ISET_WARM = 11 or TS_TH4_TH5_TH6 = 011 | 38.5 | 39 | 39.5 | % |
| V TS_HOT | TS pin falling voltage threshold for TH6 comparator to transition from TS_WARM to TS_HOT. Charging is suspended below this voltage. | As Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101 | 40.7 | 41.2 | 41.7 | % |
| V TS_HOT | TS pin falling voltage threshold for TH6 comparator to transition from TS_WARM to TS_HOT. Charging is suspended below this voltage. | As Percentage to TS pin bias reference (60°C w/ 103AT), Fixed JEITA threshold or TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111 | 33.9 | 34.4 | 34.9 | % |
| V TS_HOTZ | TS pin rising voltage threshold for TH6 comparator to transition from TS_HOT to TS_WARM. TS_WARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101 | 42.0 | 42.5 | 43.0 | % |
| V TS_HOTZ | TS pin rising voltage threshold for TH6 comparator to transition from TS_HOT to TS_WARM. TS_WARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (57.5°C w/ 103AT), Fixed JEITA threshold or TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111 | 35.2 | 35.7 | 36.2 | % |
| THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) | THERMISTOR COMPARATORS (OTG MODE) |
| V TS_ OTG_ COLD | TS pin rising voltage threshold to transition from TS_OTG_NORMAL to TS_OTG_COLD. OTG suspended above this voltage. | As Percentage to TS pin bias reference (-20°C w/ 103AT), TS_TH_OTG_COLD = 0 | 79.5 | 80.0 | 80.5 | % |
| V TS_ OTG_ COLD | TS pin rising voltage threshold to transition from TS_OTG_NORMAL to TS_OTG_COLD. OTG suspended above this voltage. | As Percentage to TS pin bias reference (-10°C w/ 103AT), TS_TH_OTG_COLD = 1 | 76.6 | 77.1 | 77.6 | % |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V TS_OTG_COLDZ | TS pin falling voltage threshold to transition from TS_OTG_COLD to TS_OTG_NORMAL. OTG resumes below this voltage. | As Percentage to TS pin bias reference (-15°C w/ 103AT), TS_TH_OTG_COLD = 0 | 78.2 | 78.7 | 79.2 | % |
| V TS_OTG_COLDZ | TS pin falling voltage threshold to transition from TS_OTG_COLD to TS_OTG_NORMAL. OTG resumes below this voltage. | As Percentage to TS pin bias reference (-5°C w/ 103AT), TS_TH_OTG_COLD = 1 | 75.0 | 75.5 | 76.5 | % |
| V TS_OTG_HOT | TS pin falling voltage threshold to transition from TS_OTG_NORMAL to TS_OTG_HOT. OTG suspended below this voltage. | As Percentage to TS pin bias reference (55°C w/ 103AT), TS_OTG_HOT = 00 | 37.2 | 37.7 | 38.2 | % |
| V TS_OTG_HOT | TS pin falling voltage threshold to transition from TS_OTG_NORMAL to TS_OTG_HOT. OTG suspended below this voltage. | As Percentage to TS pin bias reference (60°C w/ 103AT), TS_OTG_HOT = 01 | 33.9 | 34.4 | 34.9 | % |
| V TS_OTG_HOT | TS pin falling voltage threshold to transition from TS_OTG_NORMAL to TS_OTG_HOT. OTG suspended below this voltage. | As Percentage to TS pin bias reference (65°C w/ 103AT), TS_OTG_HOT = 10 | 30.8 | 31.3 | 31.8 | % |
| V TS_OTG_HOTZ | TS pin rising voltage threshold to transition from TS_OTG_HOT to TS_OTG_NORMAL. OTG resumes above this threshold. | As Percentage to TS pin bias reference (52.5°C w/ 103AT), TS_OTG_HOT = 00 | 38.5 | 39.0 | 39.5 | % |
| V TS_OTG_HOTZ | TS pin rising voltage threshold to transition from TS_OTG_HOT to TS_OTG_NORMAL. OTG resumes above this threshold. | As Percentage to TS pin bias reference (57.5°C w/ 103AT), TS_OTG_HOT = 01 | 35.2 | 35.7 | 36.2 | % |
| V TS_OTG_HOTZ | TS pin rising voltage threshold to transition from TS_OTG_HOT to TS_OTG_NORMAL. OTG resumes above this threshold. | As Percentage to TS pin bias reference (62.5°C w/ 103AT), TS_OTG_HOT = 10 | 32.0 | 32.5 | 33.0 | % |
| SWITCHING CONVERTER | SWITCHING CONVERTER | SWITCHING CONVERTER | SWITCHING CONVERTER | SWITCHING CONVERTER | SWITCHING CONVERTER | SWITCHING CONVERTER |
| F SW | PWM switching frequency | Oscillator frequency | 1.35 | 1.5 | 1.65 | MHz |
| MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE | MOSFET TURN-ON RESISTANCE |
| R Q1_ON | VBUS to PMID on resistance | T j = -40°C-85°C | 26 | 34 | mΩ | |
| R Q2_ON | Buck high-side switching MOSFET turn on resistance between PMID and SW | T j = -40°C-85°C | 55 | 78 | mΩ | |
| R Q3_ON | Buck low-side switching MOSFET turn on resistance between SW and PGND | T j = -40°C-85°C | 60 | 90 | mΩ | |
| OTG MODE CONVERTER | OTG MODE CONVERTER | OTG MODE CONVERTER | OTG MODE CONVERTER | OTG MODE CONVERTER | OTG MODE CONVERTER | OTG MODE CONVERTER |
| V BOOST_RANGE | Typical boost mode voltage regulation range | 3.8 | 5.2 | V | ||
| V BOOST_STEP | Typical boost mode voltage regulation step | 80 | mV | |||
| V BOOST_ACC | Boost mode voltage regulation accuracy | IVBUS = 0A, VOTG = 5V | -3 | 3 | % | |
| V OTG_UVP | OTG mode undervoltage falling threshold at PMID | 3.4 | V | |||
| V OTG_VBUS_OVP | OTG mode overvoltage rising threshold at VBUS | 5.5 | 5.75 | 6.0 | V | |
| V BYPASS_PMID_OVP | Bypass OTG Mode overvoltage rising threshold at PMID | As a percentage of VSYS | 105 | 107 | 109 | % |
| V BOOST_PMID_OVP | Boost OTG mode overvoltage rising threshold at PMID | As percentage of VOTG regulation | 105 | 107 | 109 | % |
| I BYPASS_RCP | Bypass OTG Mode reverse current (from PMID to BAT) threshold | 415 | 500 | 550 | mA | |
| REGN LDO | REGN LDO | REGN LDO | REGN LDO | REGN LDO | REGN LDO | REGN LDO |
| V REGN | REGN LDO output voltage | V VBUS = 5V, I REGN = 20mA | 4.4 | 4.6 | V | |
| V VBUS = 9V, I REGN = 20mA | 4.8 | 5.0 | 5.2 | V |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V REGNZ_OK | REGN not good falling threshold | Converter switching | 3.2 | V | ||
| V REGNZ_OK | REGN not good falling threshold | Converter not switching | 2.3 | V | ||
| I REGN_LIM | REGN LDO current limit | V VBUS = 5V, VREGN = 4.3V | 20 | mA | ||
| I TS_BIAS_FAULT | Rising threshold to transition from TSBIAS good condition to fault condition | REGN=5V; ISINK applied on TS_BIAS pin | 2.5 | 4.5 | 8 | mA |
| I TS_BIAS_FAULTZ | Falling threshold to transition from TSBIAS fault condition to good condition | REGN=5V; ISINK applied on TS_BIAS pin | 2 | 3.85 | 7 | mA |
| ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE | ADC MEASUREMENT ACCURACY AND PERFORMANCE |
| t ADC_CONV | ADC_SAMPLE = 00 | 24 | ms | |||
| t ADC_CONV | Conversion-time, Each | ADC_SAMPLE = 01 | 12 | ms | ||
| t ADC_CONV | Measurement | ADC_SAMPLE = 10 | 6 | ms | ||
| t ADC_CONV | ADC_SAMPLE = 11 | 3 | ms | |||
| ADC RES | ADC_SAMPLE = 00 | 11 | 12 | bits | ||
| ADC RES | ADC_SAMPLE = 01 | 10 | 11 | bits | ||
| ADC RES | Effective Resolution | ADC_SAMPLE = 10 | 9 | 10 | bits | |
| ADC RES | ADC_SAMPLE = 11 | 8 | 9 | bits | ||
| ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB | ADC MEASUREMENT RANGE AND LSB |
| IBUS_ADC | ADC Bus Current Reading (both | Range | -4 | 4 | A | |
| IBUS_ADC | forward and OTG) | LSB | 2 | mA | ||
| VBUS_ADC | ADC VBUS Voltage Reading | Range | 0 | 19.85 | V | |
| VBUS_ADC | ADC VBUS Voltage Reading | LSB | 3.97 | mV | ||
| VPMID_ADC | Range | 0 | 19.85 | V | ||
| ADC PMID Voltage Reading | LSB | 3.97 | mV | |||
| ADC BAT Voltage Reading | Range | 0 | 5.572 | V | ||
| VBAT_ADC | LSB | 1.99 | mV | |||
| VSYS_ADC | ADC SYS Voltage Reading | Range | 0 | 5.572 | V | |
| VSYS_ADC | ADC SYS Voltage Reading | LSB | 1.99 | mV | ||
| IBAT_ADC | Range | -7.5 | 4.0 | A | ||
| ADC BAT Current Reading | LSB | 2 | mA | |||
| ADC TS Voltage Reading | Range as a percent of REGN (-40 °C to 85 °C for 103AT) | 20.9 | 83.2 | % | ||
| TS_ADC | ADC TS Voltage Reading | LSB | 0.0961 | % | ||
| Range | -40 | 150 | °C | |||
| TDIE_ADC | ADC Die Temperature Reading | LSB | 0.5 | °C | ||
| I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) | I2C INTERFACE (SCL, SDA) |
| V IH | Input high threshold level, SDA and SCL | 0.78 | V | |||
| V IL | Input low threshold level, SDA and SCL | 0.42 | V | |||
| V OL_SDA | Output low threshold level | Sink current = 5mA, 1.2V VDD | 0.3 | V | ||
| I BIAS | High-level leakage current | Pull up rail 1.8V | 1 | μA | ||
| C BUS | Capacitive load for each bus line | 400 | pF | |||
| LOGIC OUTPUT PIN (INT, STAT, PMID_GD) | LOGIC OUTPUT PIN (INT, STAT, PMID_GD) | |||||
| V OL | Output low threshold level | Sink current = 5mA | 0.3 | V |
VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| I OUT_BIAS | High-level leakage current | Pull up rail 1.8V | 1 | μA | ||
| LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) | LOGIC INPUT PIN (CE, QON) |
| V IH_CE | Input high threshold level, /CE | 0.78 | V | |||
| V IL_CE | Input low threshold level, /CE | 0.4 | V | |||
| I IN_BIAS_CE | High-level leakage current, /CE | Pull up rail 1.8V | 1 | μA | ||
| V IH_QON | Input high threshold level, /QON | 1.3 | V | |||
| V IL_QON | Input low threshold level, /QON | 0.4 | V | |||
| V QON | Internal /QON pull up | /QON is pulled up internally | 5 | V | ||
| R QON | Internal /QON pull up resistance | 250 | kΩ |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage range (with respect to GND) | VBUS (converter not switching) | -2 | 26 | V |
| Voltage range (with respect to GND) | PMID (converter not switching) | -0.3 | 26 | V |
| Voltage range (with respect to GND) | BAT, SYS (converter not switching) | -0.3 | 6 | V |
| Voltage range (with respect to GND) | SW | -2 (50ns) | 21 | V |
| Voltage range (with respect to GND) | BTST (when converter switching) | -0.3 | 27 | V |
| Voltage range (with respect to GND) | CE, STAT, SCL, SDA, INT, REGN, QON | -0.3 | 6 | V |
| Voltage range (with respect to GND) | D+, D-, ILIM, TS, TS_BIAS , PMID_GD | -0.3 | 6 | V |
| Output Sink Current | INT, STAT, PMID_GD | 6 | mA | |
| Differential Voltage | BTST-SW | -0.3 | 6 | V |
| Differential Voltage | PMID-VBUS | -0.3 | 6 | V |
| Differential Voltage | SYS-BAT | -0.3 | 6 | V |
| T J | Junction temperature | -40 | 150 | °C |
| T stg | Storage temperature | -55 | 150 | °C |
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V VBUS | Input voltage | 3.9 | 18 | V | |
| V BAT | Battery voltage | 4.8 | V | ||
| I VBUS | Input current | 3.2 | A | ||
| I SW | Output current (SW) | 3.5 | A | ||
| I BAT | Fast charging current | 3.5 | A | ||
| I BAT | RMS discharge current (continuously) | 6 | A | ||
| I BAT | Peak discharge current (up to 50ms) | 10 | A | ||
| I REGN | Maximum REGN Current | 20 | mA | ||
| T A | Ambient temperature | -40 | 85 | °C | |
| T J | Junction temperature | -40 | 125 | °C | |
| L SW | Inductor for the switching regulator | 0.68 | 2.2 | μH | |
| C VBUS | VBUS capacitor (without de-rating) | 1 | μF | ||
| C PMID | PMID capacitor (without de-rating) | 10 | μF | ||
| C SYS | SYS capacitor (without de-rating) | 20 | 500 | μF |
Thermal Information
| THERMAL METRIC (1) | BQ25620, BQ25622 RYK (QFN) 18 pins | UNIT | |
|---|---|---|---|
| R θJA | Junction-to-ambient thermal resistance | 60.1 | °C/W |
| R θJC(top) | Junction-to-case (top) thermal resistance | 42.1 | °C/W |
| R θJB | Junction-to-board thermal resistance | 13 | °C/W |
| Ψ JT | Junction-to-top characterization parameter | 1.3 | °C/W |
| Ψ JB | Junction-to-board characterization parameter | 12.8 | °C/W |
Typical Application
A typical application consists of the device configured as an I 2 C controlled power path management device and a single cell battery charger for Li-Ion and Li-polymer batteries used in a wide range of smartphone and other portable devices. It integrates an input reverse-block FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side switching FET (LSFET, Q3), and battery FET (BATFET Q4) between the system and battery. The device also integrates a bootstrap diode for the high-side gate drive.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25628 | Texas Instruments | WQFN-18 |
| BQ25628/629 | Texas Instruments | — |
| BQ25629 | Texas Instruments | WQFN-18 (RYK) |
| BQ2562X | Texas Instruments | — |
Get structured datasheet data via API
Get started free