BQ25628ERYKR

Synchronous Buck Battery Charger

The BQ25628ERYKR is a synchronous buck battery charger from Texas Instruments. View the full BQ25628ERYKR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Key Specifications

Parameter	Value
Battery Chemistry	Lithium Ion/Polymer
Battery Pack Voltage	4.8V (Max)
Battery Pack Voltage	4.8V (Max)
Charge Current (Max)	2A
Current - Charging	Constant - Programmable
Current - Charging	Constant - Programmable
Fault Protection	Over Current, Over Temperature, Over Voltage, Short Circuit
Fault Protection	Over Current, Over Temperature, Over Voltage, Short Circuit
Interface	I2C
Mounting Type	Surface Mount
Number of Cells	1
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	18-PowerWFQFN
Packaging	MouseReel
Programmable Features	Current, Timer, Voltage
Programmable Features	Current, Timer, Voltage
Standard Pack Qty	3000
Supplier Device Package	18-WQFN-HR (3x2.5)
Supplier Device Package	18-WQFN-HR (3x2.5)
Input Voltage (Max)	18V

Overview

Part: BQ25628E — Texas Instruments

Type: Synchronous Buck Battery Charger with NVDC Power Path Management

Description: The BQ25628E is a highly-integrated 2-A switchmode battery charge management and system power path management device for single cell Li-ion and Li-polymer batteries, supporting a 3.9V to 18V input operating voltage range.

Operating Conditions:

Supply voltage: 3.9–18 V
Operating temperature: -40 to +85 °C
Fast charging current: up to 2 A
Junction temperature: -40 to +125 °C

Absolute Maximum Ratings:

Max supply voltage (VBUS, converter not switching): 26 V
Max continuous current (RMS discharge current): 6 A
Max junction temperature: 150 °C
Max storage temperature: 150 °C

Key Specs:

Quiescent battery current (battery only mode, ADC disabled): 1.5 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
Quiescent battery current (shutdown mode): 0.1 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
Quiescent battery current (ship mode): 0.15 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
Charge voltage regulation accuracy: ±0.4%
Charge current regulation accuracy: ±5%
Input current regulation accuracy: ±5%
Switching frequency: 1.5 MHz
BATFET on-resistance: 15 mΩ

Features:

High-efficiency, 1.5MHz, synchronous switching mode buck charger
Narrow VDC (NVDC) power path management
Flexible autonomous or I2C-controlled modes
Integrated 12-bit ADC for voltage, current, temperature monitoring
Flexible JEITA profile for safe charging over temperature
BATFET control to support shutdown, ship mode and full system reset
Input voltage regulation (VINDPM) and input current regulation (IINDPM)
Various safety features: thermal regulation, thermal shutdown, input/system/battery overvoltage protection, battery/converter overcurrent protection, charging safety timer
IEC 62368-1 CB Certification

Applications:

Consumer Wearables, Smartwatch
Portable Speakers, TWS Earphone
Hearing Aid or TWS Charging Case

Package:

RYK (WQFN 18) - 2.50mm × 3.00mm

Features

High-efficiency, 1.5MHz, synchronous switching mode buck charger for single cell battery
->90% efficiency down to 25mA output current from 5V input
-Charge termination from 5mA to 310mA, 5mA steps
-Flexible JEITA profile for safe charging over temperature
BATFET control to support shutdown, ship mode and full system reset
-1.5μA quiescent current in battery only mode
-0.15μA battery leakage current in ship mode
-0.1μA battery leakage current in shutdown
Supports a wide range of input sources
-3.9V to 18V wide input operating voltage range with 26V absolute maximum input voltage
-Maximizes source power with input voltage regulation (VINDPM) and input current regulation (IINDPM)
-VINDPM threshold automatically tracks battery voltage
Efficient battery operation with 15mΩ BATFET
Narrow VDC (NVDC) power path management
-System instant-on with depleted or no battery
-Battery supplement when adapter is fully loaded
Flexible autonomous or I 2 C-controlled modes
Integrated 12-bit ADC for voltage, current, temperature monitoring
High Accuracy
-±0.4% charge voltage regulation
-±5% charge current regulation
-±5% input current regulation
Safety
-Thermal regulation and thermal shutdown
-Input, system, and battery overvoltage protection
-Battery, and converter overcurrent protection
-Charging safety timer
Safety Related Certifications
-IEC 62368-1 CB Certification

Applications

Consumer Wearables, Smartwatch
Portable Speakers, TWS Earphone
Hearing Aid or TWS Charging Case

Pin Configuration

Figure 6-1. BQ25628E Pinout, 18-Pin WQFN Top View

Table 6-1. Pin Functions

NAME	NO.	TYPE (1)	DESCRIPTION
BTST	1	P	High Side Switching MOSFET Gate Driver Power Supply - Connect a 10 V or higher rating, 47-nF ceramic capacitor between SW and BTST as the bootstrap capacitor for driving high side switching MOSFET (Q2).
REGN	2	P	The Charger Internal Linear Regulator Output - Internally, REGN is connected to the anode of the boost-strap diode. Connect a 10 V or higher rating, 4.7-μF ceramic capacitor from REGN to power ground, The capacitor should be placed close to the IC. The REGN LDO output is used for the internal MOSFETs gate driving voltage.
PG	3	DO	Open Drain Active Low Power Good Indicator - Connect to the pull up rail via 10-kΩ resistor. LOW indicates an input source of V VBUS_UVLO < VBUS < V VBUS_OVP . Failing poor source detection or triggering the sleep comparator ( VBUS < VBAT + V SLEEP ) also causes PG to transition HIGH.
ILIM	4	AIO	Input Current Limit Setting Input Pin - ILIM pin sets the input current limit as I INREG = K ILIM / R ILIM , where R ILIM is connected from ILIM pin to GND. The input current is limited to the lower of the two values set by ILIM pin and IINDPM register bits. The ILIM pin can also be used to monitor input current. The input current is proportional to the voltage on ILIM pin and can be calculated by I IN = (K ILIM x V ILIM ) / (R ILIM x 0.8). The ILIM pin function is disabled when EN_EXTILIM bit is set to 0.
TS_BIAS	5	P	Bias for the TS Resistor Voltage Divider - Provides the bias voltage for the TS resistor voltage divider.
TS	6	AI	Temperature Qualification Voltage Input - Connect a negative temperature coefficient thermistor. Program temperature window with a resistor divider from TS pin bias reference to TS, then to GND. Charge suspends when TS pin voltage is out of range. Recommend a 103AT-2 10-kΩ thermistor.
QON	7	DI	BATFET Enable or System Power Reset Control Input - If the charger is in ship mode, a logic low on this pin with t SM_EXIT duration forces the device to exit ship mode. If the charger is not in ship mode, a logic low on this pin with t QON_RST initiates a full system power reset if either V VBUS < V VBUS_UVLO or BATFET_CTRL_WVBUS = 1. QON has no effect during shutdown mode. The pin contains an internal pull-up to maintain default high logic.
BAT	8	P	The Battery Charging Power Connection - Connect to the positive terminal of the battery pack. The internal BATFET is connected between SYS and BAT.
SYS	9	P	The Charger Output Voltage to System - The Buck converter output connection point to the system. The internal BATFET is connected between SYS and BAT.
STAT	10	DO	Open Drain Charge Status Output - It indicates various charger operations. Connect to the pull up rail via 10-kΩ resistor. LOW indicates charging in progress. HIGH indicates charging completed or charging disabled. When any fault condition occurs, STAT pin blinks at 1Hz. Setting DIS_STAT = 1 disables the STAT pin function, causing the pin to be pulled HIGH. Leave floating if unused.

Electrical Characteristics

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
QUIESCENT CURRENTS	QUIESCENT CURRENTS	QUIESCENT CURRENTS	QUIESCENT CURRENTS	QUIESCENT CURRENTS	QUIESCENT CURRENTS	QUIESCENT CURRENTS
I Q_BAT	Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is disabled	VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC disabled, system is powered by battery. -40 °C < T J < 60 °C		1.5	3	μA
I Q_BAT_ADC	Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is enabled	VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC enabled, system is powered by battery. -40 °C < T J < 60 °C		260		μA
I Q_BAT_SD	Quiescent battery current (BAT) when the charger is in shutdown mode, BATFET is disabled, ADC is disabled	VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in shutdown mode, ADC disabled, T J < 60 °C		0.1	0.2	μA
I Q_BAT_SHIP	Quiescent battery current (BAT) when the charger is in ship mode, BATFET is disabled, ADC is disabled	VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in ship mode, ADC disabled, T J < 60 °C		0.15	0.5	μA
I Q_VBUS	Quiescent input current (VBUS)	VBUS = 5V, VBAT = 4V, charge disabled, converter switching, ISYS = 0A, PFM enabled		450		μA
I Q_VBUS_HIZ	Quiescent input current (VBUS) in HIZ	VBUS = 5V, VBAT = 4V, HIZ mode, ADC disabled		5	20	μA
I Q_VBUS_HIZ	Quiescent input current (VBUS) in HIZ	VBUS = 15V, VBAT = 4V, HIZ mode, ADC disabled		20	35	μA
VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY	VBUS / VBAT SUPPLY
V VBUS_OP	VBUS operating range		3.9		18	V
V VBUS_UVLO	VBUS falling to turn off I2C, no battery	VBUS falling	3.0	3.15	3.3	V
V VBUS_UVLOZ	VBUS rising for active I2C, no battery	VBUS rising	3.2	3.35	3.5	V
V VBUS_OVP	VBUS overvoltage rising threshold	VBUS rising, VBUS_OVP = 0	6.1	6.4	6.7	V
V VBUS_OVPZ	VBUS overvoltage falling hreshold	VBUS rising, VBUS_OVP = 0	5.8	6.0	6.2	V

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V VBUS_OVP	VBUS overvoltage rising threshold	VBUS rising, VBUS_OVP = 1	18.2	18.5	18.8	V
V VBUS_OVPZ	VBUS overvoltage falling threshold	VBUS falling, VBUS_OVP = 1	17.4	17.7	18.0	V
V SLEEP	Enter Sleep mode threshold	(VBUS - VBAT), VBUS falling	9	45	85	mV
V SLEEPZ	Exit Sleep mode threshold	(VBUS - VBAT), VBUS rising	115	220	340	mV
V BAT_UVLOZ	BAT voltage for active I2C, turn on BATFET, no VBUS	VBAT rising	2.3	2.4	2.5	V
V BAT_UVLO	BAT voltage to turnoff I2C, turn off BATFET, no VBUS	VBAT falling, VBAT_UVLO = 0 = 1	2.1	2.2	2.3	V
		VBAT falling, VBAT_UVLO	1.7	1.8	1.9	V
V POORSRC	Bad adapter detection threshold	VBUS falling	3.6	3.7	3.75	V
I POORSRC	Bad adapter detection current source			10		mA
POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT	POWER-PATH MANAGEMENT
V SYS_REG_ACC	Typical system voltage regulation	ISYS = 0A, VBAT > VSYSMIN, Charge Disabled. Offset above VBAT ISYS = 0A, V BAT < VSYSMIN, Charge		50 230		mV mV
V	register range	Disabled. Offset above VSYSMIN			3.84
SYSMIN_RNG	VSYSMIN		2.56			V
V SYSMIN_REG_STEP	VSYSMIN register step size			80		mV
V SYSMIN_REG_ACC	Minimum DC system voltage output	ISYS = 0A, V BAT < VSYSMIN = B00h (3.52V), Charge Disabled	3.52	3.75		V
V SYS_SHORT	VSYS short voltage falling threshold to enter forced PFM			0.9		V
V SYS_SHORTZ	VSYS short voltage rising threshold to exit forced PFM			1.1		V
BATTERY CHARGER	BATTERY CHARGER	BATTERY CHARGER	BATTERY CHARGER	BATTERY CHARGER	BATTERY CHARGER	BATTERY CHARGER
V REG_RANGE	Typical charge voltage regulation range		3.50		4.80	V
V REG_STEP	Typical charge voltage step			10		mV
V REG_ACC	Charge voltage accuracy	T J = 25°C	-0.3		0.3	%
		T J = -10°C - 85°C	-0.4		0.4	%
I CHG_RANGE	Typical charge current regulation range		0.04		2.00	A
I CHG_STEP	Typical charge current regulation step			40		mA
I CHG_ACC	Charge current accuracy	VBAT = 3.1V or 3.8V, ICHG = 1040mA, T J = -10°C - 85°C	-5.5		5.5	%
I CHG_ACC	Charge current accuracy	VBAT = 3.1V or 3.8V, ICHG = 320mA, T J = -10°C - 85°C	-5.5		5.5	%
I CHG_ACC	Charge current accuracy	VBAT = 3.1V or 3.8V, ICHG = 240mA, T J = -10°C - 85°C	-10		10	%
I CHG_ACC	Charge current accuracy	VBAT = 3.1V or 3.8V, ICHG = 80mA, T J = -10°C - 85°C	60	80	100	mA
I PRECHG_RANGE	Typical pre-charge current range		10		310	mA
I PRECHG_STEP	Typical pre-charge current step			10		mA

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
		VBAT = 2.5V, IPRECHG = 250mA, T J = -10°C - 85°C	-12		12	%
I PRECHG_ACC	Pre-charge current accuracy when V BAT below V SYSMIN setting	VBAT = 2.5V, IPRECHG = 100mA, T J = -10°C - 85°C	-15		15	%
		VBAT = 2.5V, IPRECHG = 50mA, T J = - 10°C - 85°C	-25		25	%
I TERM_RANGE	Typical termination current range		5		310	mA
I TERM_STEP	Typical termination current step			5		mA
		ITERM = 10mA, T J = -10°C - 85°C	-80		80	%
I TERM_ACC	Termination current accuracy	ITERM = 50mA, T J = -10°C - 85°C	-17		17	%
		ITERM = 100mA, T J = -10°C - 85°C	-10		10	%
V BAT_SHORTZ	Battery short voltage rising threshold to start pre-charge	VBAT rising		2.25		V
V BAT_SHORT	Battery short voltage falling threshold to stop pre-charge	VBAT falling, VBAT_UVLO=0		2.05		V
V BAT_SHORT	Battery short voltage falling threshold to stop pre-charge	VBAT falling, VBAT_UVLO=1		1.85		V
I BAT_SHORT	Battery short trickle charging current	VBAT < V BAT_SHORTZ , ITRICKLE = 0	5	10	17	mA
		VBAT < V BAT_SHORTZ , ITRICKLE = 1	28	40	52	mA
V BAT_LOWVZ	Battery voltage rising threshold	Transition from pre-charge to fast charge	2.9	3	3.1	V
V BAT_LOWV	Battery voltage falling threshold	Transition from fast charge to pre-charge	2.7	2.8	2.9	V
V RECHG	Battery recharge threshold below	VBAT falling, VRECHG = 0		100		mV
	V REG	VBAT falling, VRECHG = 1		200		mV
I PMID_LOAD	PMID discharge load current		20	30		mA
I BAT_LOAD	Battery discharge load current		20	30		mA
I SYS_LOAD	System discharge load current		20	30		mA
BATFET
R BATFET	MOSFET on resistance from SYS to BAT			15	25	mΩ
BATTERY PROTECTIONS	BATTERY PROTECTIONS
V BAT_OVP	Battery overvoltage rising threshold	As percentage of VREG	103	104	105	%
V BAT_OVPZ	Battery overvoltage falling threshold	As percentage of VREG	101	102	103	%
I BATFET_OCP	BATFET over-current rising threshold		6			A
	Battery discharging peak current	IBAT_PK = 10	6			A
I BAT_PK	rising threshold	IBAT_PK = 11	12			A
INPUT VOLTAGE / CURRENT REGULATION	INPUT VOLTAGE / CURRENT REGULATION
V INDPM_RANGE	Typical input voltage regulation range		3.8		16.8	V
V INDPM_STEP	Typical input voltage regulation step			40		mV
		VINDPM=4.6V	-4		4	%
V INDPM_ACC	Input voltage regulation accuracy	VINDPM=8V	-3		3	%
V INDPM_ACC		VINDPM=16V	-2		2	%
V INDPM_BAT_TRACK	Battery tracking VINDPM accuracy	VBAT = 3.9V, VINDPM_BAT_TRACK=1, VINDPM = 4V	4.15	4.3	4.45	V

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
I INDPM_RANGE	Typical input current regulation range		0.1		3.2	A
I INDPM_STEP	Typical input current regulation step			20		mA
		IINDPM = 500mA, VBUS=5V	450	475	500	mA
I INDPM_ACC	Input current regulation accuracy	IINDPM = 900mA, VBUS=5V	810	855	900	mA
		IINDPM = 1500mA, VBUS=5V	1350	1425	1500	mA
K ILIM	ILIM Pin Scale Factor, IINREG = K ILIM / R ILIM	INREG = 1.6 A	2250	2500	2750	AΩ
THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN	THERMAL REGULATION AND THERMAL SHUTDOWN
T REG	Junction temperature regulation	TREG = 1		120		°C
	accuracy	TREG = 0		60		°C
T SHUT	Thermal Shutdown Rising Threshold	Temperature Increasing		140		°C
T SHUT_HYS	Thermal Shutdown Falling Hysteresis	Temperature Decreasing by T SHUT_HYS		30		°C
THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)	THERMISTOR COMPARATORS (CHARGE MODE)
V TS_COLD	TS pin rising voltage threshold for TH1 comparator to transition from TS_COOL to	As Percentage to TS pin bias reference (-5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110	75.0	75.5	76.0	%
V TS_COLD	TS_COLD. Charge suspended above this voltage.	As Percentage to TS pin bias reference (0°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111	72.8	73.3	73.8	%
V TS_COLDZ	TS pin falling voltage threshold for TH1 comparator to transition from TS_COLD to TS_COOL. TS_COOL charge	As Percentage to TS pin bias reference (-2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110	73.9	74.4	74.9	%
V TS_COLDZ	settings resume below this voltage.	As Percentage to TS pin bias reference (2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111	71.7	72.2	72.7	%
V TS_COOL	for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage.	As Percentage to TS pin bias reference (5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 100	70.6	71.1	71.6	%
V TS_COOL	TS pin rising voltage threshold	As Percentage to TS pin bias reference (10°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 111	67.9	68.4	68.9	%
V TS_COOL		As Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 010	65.0	65.5	66.0	%
V TS_COOL		As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 011	61.9	62.4	62.9	%
V TS_COOLZ	TS pin falling voltage threshold for TH2 comparator to	As Percentage to TS pin bias reference (7.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 100	69.3	69.8	70.3	%
V TS_COOLZ	transition from TS_COOL to	As Percentage to TS pin bias reference (12.5°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 111	66.6	67.1	67.6	%
V TS_COOLZ	TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage.	As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010	63.7	64.2	64.7	%
V TS_COOLZ		As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 011	60.6	61.1	61.6	%

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V TS_PRECOOL	TS pin rising voltage threshold for TH3 comparator to transition from TS_NORMAL to TS_PRECOOL. TS_PRECOOL	As Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101	65	65.5	66	%
V TS_PRECOOL	charge settings used above this voltage.	As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111	61.9	62.4	62.9	%
V TS_PRECOOLZ	TS pin falling voltage threshold for TH3 comparator to transition from TS_PRECOOL to TS_NORMAL. Normal charging	As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101	63.7	64.2	64.7	%
V TS_PRECOOLZ	resumes below this voltage.	As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111	60.6	61.1	61.6	%
V TS_PREWARM	TS pin falling voltage threshold for TH4 comparator to transition from TS_NORMAL to TS_PREWARM. TS_PREWARM	As Percentage to TS pin bias reference (35°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101	51.5	52	52.5	%
V TS_PREWARM	charging settings used below this voltage.	As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111	47.9	48.4	48.9	%
V TS_PREWARMZ	TS pin rising voltage threshold for TH4 comparator to transition from TS_PREWARM to TS_NORMAL. Normal charging	As Percentage to TS pin bias reference (32.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101	53.3	53.8	54.3	%
V TS_PREWARMZ	resumes above this voltage.	As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111	49.2	49.7	50.2	%
V TS_WARM	TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage.	As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 100	47.9	48.4	48.9	%
V TS_WARM		As Percentage to TS pin bias reference (45°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 110	44.3	44.8	45.3	%
V TS_WARM		As Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 111	40.7	41.2	41.7	%
V TS_WARM		As Percentage to TS pin bias reference (55°C w/ 103AT), TS_TH4_TH5_TH6 = 011	37.2	37.7	38.2	%
V TS_WARMZ	TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage.	As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 100	49.2	49.7	50.2	%
V TS_WARMZ		As Percentage to TS pin bias reference (42.5°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 110	45.6	46.1	46.6	%
V TS_WARMZ		As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 111	42	42.5	43	%
V TS_WARMZ		As Percentage to TS pin bias reference (52.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011	38.5	39	39.5	%
V TS_HOT	TS pin falling voltage threshold for TH6 comparator to transition from TS_WARM to	As Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101	40.7	41.2	41.7	%
V TS_HOT	TS_HOT. Charging is suspended below this voltage.	As Percentage to TS pin bias reference (60°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111	33.9	34.4	34.9	%

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VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

VBUS_UVLOZ	VBUS VBUS_OVP J PARAMETER	J TEST CONDITIONS	MIN	TYP	MAX	UNIT
V TS_HOTZ	TS pin rising voltage threshold for TH6 comparator to transition from TS_HOT to TS_WARM. TS_WARM charging	As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101	42.0	42.5	43.0	%
V TS_HOTZ	settings resume above this voltage.	As Percentage to TS pin bias reference (57.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111	35.2	35.7	36.2	%
SWITCHING CONVERTER	SWITCHING CONVERTER
F SW	PWM switching frequency	Oscillator frequency	1.35	1.5	1.65	MHz
MOSFET TURN-ON RESISTANCE	MOSFET TURN-ON RESISTANCE
R Q1_ON	VBUS to PMID on resistance	T j = -40°C-85°C		26	34	mΩ
R Q2_ON	Buck high-side switching MOSFET turn on resistance between PMID and SW	T j = -40°C-85°C		55	78	mΩ
R Q3_ON	Buck low-side switching MOSFET turn on resistance between SW and PGND	T j = -40°C-85°C		60	90	mΩ
REGN LDO	REGN LDO
V REGN	REGN LDO output voltage	V VBUS = 5V, I REGN = 20mA	4.4	4.6		V
V REGN	REGN LDO output voltage	V VBUS = 9V, I REGN = 20mA	4.8	5.0	5.2	V
V REGNZ_OK	REGN not good falling threshold	Converter switching		3.2		V
V REGNZ_OK	REGN not good falling threshold	Converter not switching		2.3		V
I REGN_LIM	REGN LDO current limit	V VBUS = 5V, VREGN = 4.3V	20			mA
I TS_BIAS_FAULT	Rising threshold to transition from TSBIAS good condition to fault condition	REGN=5V; ISINK applied on TS_BIAS pin	2.5	4.5	8	mA
I TS_BIAS_FAULTZ	Falling threshold to transition from TSBIAS fault condition to good condition	REGN=5V; ISINK applied on TS_BIAS pin	2	3.85	7	mA
ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE	ADC MEASUREMENT ACCURACY AND PERFORMANCE
t ADC_CONV	Conversion-time, Each	ADC_SAMPLE = 00		30		ms
t ADC_CONV	Conversion-time, Each	ADC_SAMPLE = 01		15		ms
t ADC_CONV	Measurement	ADC_SAMPLE = 10		7.5		ms
t ADC_CONV	Conversion-time, Each	ADC_SAMPLE = 11		3.75		ms
ADC RES	Effective Resolution	ADC_SAMPLE = 00	11	12		bits
ADC RES	Effective Resolution	ADC_SAMPLE = 01	10	11		bits
ADC RES	Effective Resolution	ADC_SAMPLE = 10	9	10		bits
ADC RES	Effective Resolution	ADC_SAMPLE = 11	8	9		bits
ADC MEASUREMENT RANGE AND LSB	ADC MEASUREMENT RANGE AND LSB
IBUS_ADC	ADC Bus Current Reading	Range	-4		4	A
IBUS_ADC	ADC Bus Current Reading	LSB		2		mA
VBUS_ADC	ADC VBUS Voltage Reading	Range	0		18.00	V
VBUS_ADC	ADC VBUS Voltage Reading	LSB		3.97		mV
VPMID_ADC	ADC PMID Voltage Reading	Range	0		18.00	V
VPMID_ADC	ADC PMID Voltage Reading	LSB		3.97		mV
VBAT_ADC	ADC BAT Voltage Reading	Range	0		5.572	V
VBAT_ADC	ADC BAT Voltage Reading	LSB		1.99		mV
VSYS_ADC	ADC SYS Voltage Reading	Range	0		5.572	V
VSYS_ADC		LSB		1.99		mV

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
IBAT_ADC	ADC BAT Current Reading	Range	-7.5		4.0	A
IBAT_ADC	ADC BAT Current Reading	LSB		4		mA
TS_ADC	ADC TS Voltage Reading	Range as a percent of REGN (-40 °C to 85 °C for 103AT)	20.9		83.2	%
TS_ADC	ADC TS Voltage Reading	LSB		0.0961		%
TDIE_ADC	ADC Die Temperature Reading	Range	-40		140	°C
TDIE_ADC	ADC Die Temperature Reading	LSB		0.5		°C
I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)	I2C INTERFACE (SCL, SDA)
V IH	Input high threshold level, SDA and SCL		0.78			V
V IL	Input low threshold level, SDA and SCL				0.42	V
V OL_SDA	Output low threshold level	Sink current = 5mA, 1.2V VDD			0.3	V
I BIAS	High-level leakage current	Pull up rail 1.8V			1	μA
C BUS	Capacitive load for each bus line				400	pF
LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)	LOGIC OUTPUT PIN (INT, STAT)
V OL	Output low threshold level	Sink current = 5mA			0.3	V
I OUT_BIAS	High-level leakage current	Pull up rail 1.8V			1	μA
LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)	LOGIC INPUT PIN (CE, QON)
V IH_CE	Input high threshold level, /CE		0.78			V
V IL_CE	Input low threshold level, /CE				0.4	V
I IN_BIAS_CE	High-level leakage current, /CE	Pull up rail 1.8V			1	μA
V IH_QON	Input high threshold level, /QON		1.3			V
V IL_QON	Input low threshold level, /QON				0.4	V
V QON	Internal /QON pull up	/QON is pulled up internally.		5.0		V
R QON	Internal /QON pull up resistance			250		kΩ

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

		MIN	MAX	UNIT
Voltage range (with respect to GND)	VBUS (converter not switching)	-2	26	V
Voltage range (with respect to GND)	PMID (converter not switching)	-0.3	26	V
Voltage range (with respect to GND)	BAT, SYS (converter not switching)	-0.3	6	V
Voltage range (with respect to GND)	SW	-2 (50ns)	21	V
Voltage range (with respect to GND)	BTST (when converter switching)	-0.3	27	V
Voltage range (with respect to GND)	CE, STAT, SCL, SDA, INT, REGN, QON	-0.3	6	V
Voltage range (with respect to GND)	ILIM, PG, TS, TS_BIAS	-0.3	6	V
Output Sink Current	INT, STAT, PG		6	mA
Differential Voltage	BTST-SW	-0.3	6	V
Differential Voltage	PMID-VBUS	-0.3	6	V
Differential Voltage	SYS-BAT	-0.3	6	V
T J	Junction temperature	-40	150	°C
T stg	Storage temperature	-55	150	°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V VBUS	Input voltage	3.9	18	V
V BAT	Battery voltage		4.8	V
I VBUS	Input current		3.2	A
I SW	Output current (SW)		3.5	A
I BAT	Fast charging current		2	A
I BAT	RMS discharge current (continuously)		6	A
I BAT	Peak discharge current (up to 50ms)		10	A
I REGN	Maximum REGN Current		20	mA
T A	Ambient temperature	-40	85	°C
T J	Junction temperature	-40	125	°C
L SW	Inductor for the switching regulator	0.68	2.2	μH
C VBUS	VBUS capacitor (without de-rating)	1		μF
C PMID	PMID capacitor (without de-rating)	10		μF
C SYS	SYS capacitor (without de-rating)	20	500	μF

Thermal Information

THERMAL METRIC (1)		BQ25628E RYK (QFN) 18 pins	UNIT
R θJA	Junction-to-ambient thermal resistance	60.1	°C/W
R θJC(top)	Junction-to-case (top) thermal resistance	42.1	°C/W
R θJB	Junction-to-board thermal resistance	13	°C/W
Ψ JT	Junction-to-top characterization parameter	1.3	°C/W
Ψ JB	Junction-to-board characterization parameter	12.8	°C/W

Typical Application

A typical application consists of the device configured as an I 2 C controlled power path management device and a single cell battery charger for Li-Ion and Li-polymer batteries used in a wide range of smartphone and other portable devices. It integrates an input reverse-block FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side switching FET (LSFET, Q3), and battery FET (BATFET Q4) between the system and battery. The device also integrates a bootstrap diode for the high-side gate drive.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
BQ25628	Texas Instruments	WQFN-18
BQ25628E	Texas Instruments	—
BQ25628ERYKR.A	Texas Instruments	—
BQ25629	Texas Instruments	WQFN-18 (RYK)

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