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BQ25628E

Synchronous Buck Battery Charger

The BQ25628E is a synchronous buck battery charger from Texas Instruments. View the full BQ25628E datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Synchronous Buck Battery Charger

Key Specifications

ParameterValue
Battery ChemistryLithium Ion/Polymer
Battery Pack Voltage4.8V (Max)
Battery Pack Voltage4.8V (Max)
Charge Current (Max)2A
Current - ChargingConstant - Programmable
Current - ChargingConstant - Programmable
Fault ProtectionOver Current, Over Temperature, Over Voltage, Short Circuit
Fault ProtectionOver Current, Over Temperature, Over Voltage, Short Circuit
InterfaceI2C
Mounting TypeSurface Mount
Number of Cells1
Operating Temperature-40°C ~ 85°C (TA)
Package / Case18-PowerWFQFN
PackagingMouseReel
Programmable FeaturesCurrent, Timer, Voltage
Programmable FeaturesCurrent, Timer, Voltage
Standard Pack Qty3000
Supplier Device Package18-WQFN-HR (3x2.5)
Supplier Device Package18-WQFN-HR (3x2.5)
Input Voltage (Max)18V

Overview

Part: BQ25628E — Texas Instruments

Type: Synchronous Buck Battery Charger with NVDC Power Path Management

Description: The BQ25628E is a highly-integrated 2-A switchmode battery charge management and system power path management device for single cell Li-ion and Li-polymer batteries, supporting a 3.9V to 18V input operating voltage range.

Operating Conditions:

  • Supply voltage: 3.9–18 V
  • Operating temperature: -40 to +85 °C
  • Fast charging current: up to 2 A
  • Junction temperature: -40 to +125 °C

Absolute Maximum Ratings:

  • Max supply voltage (VBUS, converter not switching): 26 V
  • Max continuous current (RMS discharge current): 6 A
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Quiescent battery current (battery only mode, ADC disabled): 1.5 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
  • Quiescent battery current (shutdown mode): 0.1 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
  • Quiescent battery current (ship mode): 0.15 μA (typ) at VBAT = 4V, No VBUS, TJ < 60 °C
  • Charge voltage regulation accuracy: ±0.4%
  • Charge current regulation accuracy: ±5%
  • Input current regulation accuracy: ±5%
  • Switching frequency: 1.5 MHz
  • BATFET on-resistance: 15 mΩ

Features:

  • High-efficiency, 1.5MHz, synchronous switching mode buck charger
  • Narrow VDC (NVDC) power path management
  • Flexible autonomous or I2C-controlled modes
  • Integrated 12-bit ADC for voltage, current, temperature monitoring
  • Flexible JEITA profile for safe charging over temperature
  • BATFET control to support shutdown, ship mode and full system reset
  • Input voltage regulation (VINDPM) and input current regulation (IINDPM)
  • Various safety features: thermal regulation, thermal shutdown, input/system/battery overvoltage protection, battery/converter overcurrent protection, charging safety timer
  • IEC 62368-1 CB Certification

Applications:

  • Consumer Wearables, Smartwatch
  • Portable Speakers, TWS Earphone
  • Hearing Aid or TWS Charging Case

Package:

  • RYK (WQFN 18) - 2.50mm × 3.00mm

Features

  • High-efficiency, 1.5MHz, synchronous switching mode buck charger for single cell battery
  • ->90% efficiency down to 25mA output current from 5V input
  • -Charge termination from 5mA to 310mA, 5mA steps
  • -Flexible JEITA profile for safe charging over temperature
  • BATFET control to support shutdown, ship mode and full system reset
  • -1.5μA quiescent current in battery only mode
  • -0.15μA battery leakage current in ship mode
  • -0.1μA battery leakage current in shutdown
  • Supports a wide range of input sources
  • -3.9V to 18V wide input operating voltage range with 26V absolute maximum input voltage
  • -Maximizes source power with input voltage regulation (VINDPM) and input current regulation (IINDPM)
  • -VINDPM threshold automatically tracks battery voltage
  • Efficient battery operation with 15mΩ BATFET
  • Narrow VDC (NVDC) power path management
  • -System instant-on with depleted or no battery
  • -Battery supplement when adapter is fully loaded
  • Flexible autonomous or I 2 C-controlled modes
  • Integrated 12-bit ADC for voltage, current, temperature monitoring
  • High Accuracy
  • -±0.4% charge voltage regulation
  • -±5% charge current regulation
  • -±5% input current regulation
  • Safety
  • -Thermal regulation and thermal shutdown
  • -Input, system, and battery overvoltage protection
  • -Battery, and converter overcurrent protection
  • -Charging safety timer
  • Safety Related Certifications
  • -IEC 62368-1 CB Certification

Applications

  • Consumer Wearables, Smartwatch
  • Portable Speakers, TWS Earphone
  • Hearing Aid or TWS Charging Case

Pin Configuration

Figure 6-1. BQ25628E Pinout, 18-Pin WQFN Top View

Table 6-1. Pin Functions

NAMENO.TYPE (1)DESCRIPTION
BTST1PHigh Side Switching MOSFET Gate Driver Power Supply - Connect a 10 V or higher rating, 47-nF ceramic capacitor between SW and BTST as the bootstrap capacitor for driving high side switching MOSFET (Q2).
REGN2PThe Charger Internal Linear Regulator Output - Internally, REGN is connected to the anode of the boost-strap diode. Connect a 10 V or higher rating, 4.7-μF ceramic capacitor from REGN to power ground, The capacitor should be placed close to the IC. The REGN LDO output is used for the internal MOSFETs gate driving voltage.
PG3DOOpen Drain Active Low Power Good Indicator - Connect to the pull up rail via 10-kΩ resistor. LOW indicates an input source of V VBUS_UVLO < VBUS < V VBUS_OVP . Failing poor source detection or triggering the sleep comparator ( VBUS < VBAT + V SLEEP ) also causes PG to transition HIGH.
ILIM4AIOInput Current Limit Setting Input Pin - ILIM pin sets the input current limit as I INREG = K ILIM / R ILIM , where R ILIM is connected from ILIM pin to GND. The input current is limited to the lower of the two values set by ILIM pin and IINDPM register bits. The ILIM pin can also be used to monitor input current. The input current is proportional to the voltage on ILIM pin and can be calculated by I IN = (K ILIM x V ILIM ) / (R ILIM x 0.8). The ILIM pin function is disabled when EN_EXTILIM bit is set to 0.
TS_BIAS5PBias for the TS Resistor Voltage Divider - Provides the bias voltage for the TS resistor voltage divider.
TS6AITemperature Qualification Voltage Input - Connect a negative temperature coefficient thermistor. Program temperature window with a resistor divider from TS pin bias reference to TS, then to GND. Charge suspends when TS pin voltage is out of range. Recommend a 103AT-2 10-kΩ thermistor.
QON7DIBATFET Enable or System Power Reset Control Input - If the charger is in ship mode, a logic low on this pin with t SM_EXIT duration forces the device to exit ship mode. If the charger is not in ship mode, a logic low on this pin with t QON_RST initiates a full system power reset if either V VBUS < V VBUS_UVLO or BATFET_CTRL_WVBUS = 1. QON has no effect during shutdown mode. The pin contains an internal pull-up to maintain default high logic.
BAT8PThe Battery Charging Power Connection - Connect to the positive terminal of the battery pack. The internal BATFET is connected between SYS and BAT.
SYS9PThe Charger Output Voltage to System - The Buck converter output connection point to the system. The internal BATFET is connected between SYS and BAT.
STAT10DOOpen Drain Charge Status Output - It indicates various charger operations. Connect to the pull up rail via 10-kΩ resistor. LOW indicates charging in progress. HIGH indicates charging completed or charging disabled. When any fault condition occurs, STAT pin blinks at 1Hz. Setting DIS_STAT = 1 disables the STAT pin function, causing the pin to be pulled HIGH. Leave floating if unused.

Electrical Characteristics

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
QUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTS
I Q_BATQuiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is disabledVBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC disabled, system is powered by battery. -40 °C < T J < 60 °C1.53μA
I Q_BAT_ADCQuiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is enabledVBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC enabled, system is powered by battery. -40 °C < T J < 60 °C260μA
I Q_BAT_SDQuiescent battery current (BAT) when the charger is in shutdown mode, BATFET is disabled, ADC is disabledVBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in shutdown mode, ADC disabled, T J < 60 °C0.10.2μA
I Q_BAT_SHIPQuiescent battery current (BAT) when the charger is in ship mode, BATFET is disabled, ADC is disabledVBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in ship mode, ADC disabled, T J < 60 °C0.150.5μA
I Q_VBUSQuiescent input current (VBUS)VBUS = 5V, VBAT = 4V, charge disabled, converter switching, ISYS = 0A, PFM enabled450μA
I Q_VBUS_HIZQuiescent input current (VBUS) in HIZVBUS = 5V, VBAT = 4V, HIZ mode, ADC disabled520μA
I Q_VBUS_HIZQuiescent input current (VBUS) in HIZVBUS = 15V, VBAT = 4V, HIZ mode, ADC disabled2035μA
VBUS / VBAT SUPPLYVBUS / VBAT SUPPLYVBUS / VBAT SUPPLYVBUS / VBAT SUPPLYVBUS / VBAT SUPPLYVBUS / VBAT SUPPLYVBUS / VBAT SUPPLY
V VBUS_OPVBUS operating range3.918V
V VBUS_UVLOVBUS falling to turn off I2C, no batteryVBUS falling3.03.153.3V
V VBUS_UVLOZVBUS rising for active I2C, no batteryVBUS rising3.23.353.5V
V VBUS_OVPVBUS overvoltage rising thresholdVBUS rising, VBUS_OVP = 06.16.46.7V
V VBUS_OVPZVBUS overvoltage falling hresholdVBUS rising, VBUS_OVP = 05.86.06.2V

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V VBUS_OVPVBUS overvoltage rising thresholdVBUS rising, VBUS_OVP = 118.218.518.8V
V VBUS_OVPZVBUS overvoltage falling thresholdVBUS falling, VBUS_OVP = 117.417.718.0V
V SLEEPEnter Sleep mode threshold(VBUS - VBAT), VBUS falling94585mV
V SLEEPZExit Sleep mode threshold(VBUS - VBAT), VBUS rising115220340mV
V BAT_UVLOZBAT voltage for active I2C, turn on BATFET, no VBUSVBAT rising2.32.42.5V
V BAT_UVLOBAT voltage to turnoff I2C, turn off BATFET, no VBUSVBAT falling, VBAT_UVLO = 0 = 12.12.22.3V
VBAT falling, VBAT_UVLO1.71.81.9V
V POORSRCBad adapter detection thresholdVBUS falling3.63.73.75V
I POORSRCBad adapter detection current source10mA
POWER-PATH MANAGEMENTPOWER-PATH MANAGEMENTPOWER-PATH MANAGEMENTPOWER-PATH MANAGEMENTPOWER-PATH MANAGEMENTPOWER-PATH MANAGEMENTPOWER-PATH MANAGEMENT
V SYS_REG_ACCTypical system voltage regulationISYS = 0A, VBAT > VSYSMIN, Charge Disabled. Offset above VBAT ISYS = 0A, V BAT < VSYSMIN, Charge50 230mV mV
Vregister rangeDisabled. Offset above VSYSMIN3.84
SYSMIN_RNGVSYSMIN2.56V
V SYSMIN_REG_STEPVSYSMIN register step size80mV
V SYSMIN_REG_ACCMinimum DC system voltage outputISYS = 0A, V BAT < VSYSMIN = B00h (3.52V), Charge Disabled3.523.75V
V SYS_SHORTVSYS short voltage falling threshold to enter forced PFM0.9V
V SYS_SHORTZVSYS short voltage rising threshold to exit forced PFM1.1V
BATTERY CHARGERBATTERY CHARGERBATTERY CHARGERBATTERY CHARGERBATTERY CHARGERBATTERY CHARGERBATTERY CHARGER
V REG_RANGETypical charge voltage regulation range3.504.80V
V REG_STEPTypical charge voltage step10mV
V REG_ACCCharge voltage accuracyT J = 25°C-0.30.3%
T J = -10°C - 85°C-0.40.4%
I CHG_RANGETypical charge current regulation range0.042.00A
I CHG_STEPTypical charge current regulation step40mA
I CHG_ACCCharge current accuracyVBAT = 3.1V or 3.8V, ICHG = 1040mA, T J = -10°C - 85°C-5.55.5%
I CHG_ACCCharge current accuracyVBAT = 3.1V or 3.8V, ICHG = 320mA, T J = -10°C - 85°C-5.55.5%
I CHG_ACCCharge current accuracyVBAT = 3.1V or 3.8V, ICHG = 240mA, T J = -10°C - 85°C-1010%
I CHG_ACCCharge current accuracyVBAT = 3.1V or 3.8V, ICHG = 80mA, T J = -10°C - 85°C6080100mA
I PRECHG_RANGETypical pre-charge current range10310mA
I PRECHG_STEPTypical pre-charge current step10mA

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VBAT = 2.5V, IPRECHG = 250mA, T J = -10°C - 85°C-1212%
I PRECHG_ACCPre-charge current accuracy when V BAT below V SYSMIN settingVBAT = 2.5V, IPRECHG = 100mA, T J = -10°C - 85°C-1515%
VBAT = 2.5V, IPRECHG = 50mA, T J = - 10°C - 85°C-2525%
I TERM_RANGETypical termination current range5310mA
I TERM_STEPTypical termination current step5mA
ITERM = 10mA, T J = -10°C - 85°C-8080%
I TERM_ACCTermination current accuracyITERM = 50mA, T J = -10°C - 85°C-1717%
ITERM = 100mA, T J = -10°C - 85°C-1010%
V BAT_SHORTZBattery short voltage rising threshold to start pre-chargeVBAT rising2.25V
V BAT_SHORTBattery short voltage falling threshold to stop pre-chargeVBAT falling, VBAT_UVLO=02.05V
V BAT_SHORTBattery short voltage falling threshold to stop pre-chargeVBAT falling, VBAT_UVLO=11.85V
I BAT_SHORTBattery short trickle charging currentVBAT < V BAT_SHORTZ , ITRICKLE = 051017mA
VBAT < V BAT_SHORTZ , ITRICKLE = 1284052mA
V BAT_LOWVZBattery voltage rising thresholdTransition from pre-charge to fast charge2.933.1V
V BAT_LOWVBattery voltage falling thresholdTransition from fast charge to pre-charge2.72.82.9V
V RECHGBattery recharge threshold belowVBAT falling, VRECHG = 0100mV
V REGVBAT falling, VRECHG = 1200mV
I PMID_LOADPMID discharge load current2030mA
I BAT_LOADBattery discharge load current2030mA
I SYS_LOADSystem discharge load current2030mA
BATFET
R BATFETMOSFET on resistance from SYS to BAT1525
BATTERY PROTECTIONSBATTERY PROTECTIONS
V BAT_OVPBattery overvoltage rising thresholdAs percentage of VREG103104105%
V BAT_OVPZBattery overvoltage falling thresholdAs percentage of VREG101102103%
I BATFET_OCPBATFET over-current rising threshold6A
Battery discharging peak currentIBAT_PK = 106A
I BAT_PKrising thresholdIBAT_PK = 1112A
INPUT VOLTAGE / CURRENT REGULATIONINPUT VOLTAGE / CURRENT REGULATION
V INDPM_RANGETypical input voltage regulation range3.816.8V
V INDPM_STEPTypical input voltage regulation step40mV
VINDPM=4.6V-44%
V INDPM_ACCInput voltage regulation accuracyVINDPM=8V-33%
V INDPM_ACCVINDPM=16V-22%
V INDPM_BAT_TRACKBattery tracking VINDPM accuracyVBAT = 3.9V, VINDPM_BAT_TRACK=1, VINDPM = 4V4.154.34.45V

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
I INDPM_RANGETypical input current regulation range0.13.2A
I INDPM_STEPTypical input current regulation step20mA
IINDPM = 500mA, VBUS=5V450475500mA
I INDPM_ACCInput current regulation accuracyIINDPM = 900mA, VBUS=5V810855900mA
IINDPM = 1500mA, VBUS=5V135014251500mA
K ILIMILIM Pin Scale Factor, IINREG = K ILIM / R ILIMINREG = 1.6 A225025002750
THERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWNTHERMAL REGULATION AND THERMAL SHUTDOWN
T REGJunction temperature regulationTREG = 1120°C
accuracyTREG = 060°C
T SHUTThermal Shutdown Rising ThresholdTemperature Increasing140°C
T SHUT_HYSThermal Shutdown Falling HysteresisTemperature Decreasing by T SHUT_HYS30°C
THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)THERMISTOR COMPARATORS (CHARGE MODE)
V TS_COLDTS pin rising voltage threshold for TH1 comparator to transition from TS_COOL toAs Percentage to TS pin bias reference (-5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 11075.075.576.0%
V TS_COLDTS_COLD. Charge suspended above this voltage.As Percentage to TS pin bias reference (0°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 11172.873.373.8%
V TS_COLDZTS pin falling voltage threshold for TH1 comparator to transition from TS_COLD to TS_COOL. TS_COOL chargeAs Percentage to TS pin bias reference (-2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 11073.974.474.9%
V TS_COLDZsettings resume below this voltage.As Percentage to TS pin bias reference (2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 11171.772.272.7%
V TS_COOLfor TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage.As Percentage to TS pin bias reference (5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 10070.671.171.6%
V TS_COOLTS pin rising voltage thresholdAs Percentage to TS pin bias reference (10°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 11167.968.468.9%
V TS_COOLAs Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 01065.065.566.0%
V TS_COOLAs Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 01161.962.462.9%
V TS_COOLZTS pin falling voltage threshold for TH2 comparator toAs Percentage to TS pin bias reference (7.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 10069.369.870.3%
V TS_COOLZtransition from TS_COOL toAs Percentage to TS pin bias reference (12.5°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 11166.667.167.6%
V TS_COOLZTS_PRECOOL. TS_PRECOOL charging settings resume below this voltage.As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 01063.764.264.7%
V TS_COOLZAs Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 01160.661.161.6%

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V TS_PRECOOLTS pin rising voltage threshold for TH3 comparator to transition from TS_NORMAL to TS_PRECOOL. TS_PRECOOLAs Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 1016565.566%
V TS_PRECOOLcharge settings used above this voltage.As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 11161.962.462.9%
V TS_PRECOOLZTS pin falling voltage threshold for TH3 comparator to transition from TS_PRECOOL to TS_NORMAL. Normal chargingAs Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 10163.764.264.7%
V TS_PRECOOLZresumes below this voltage.As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 11160.661.161.6%
V TS_PREWARMTS pin falling voltage threshold for TH4 comparator to transition from TS_NORMAL to TS_PREWARM. TS_PREWARMAs Percentage to TS pin bias reference (35°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 10151.55252.5%
V TS_PREWARMcharging settings used below this voltage.As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 11147.948.448.9%
V TS_PREWARMZTS pin rising voltage threshold for TH4 comparator to transition from TS_PREWARM to TS_NORMAL. Normal chargingAs Percentage to TS pin bias reference (32.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 10153.353.854.3%
V TS_PREWARMZresumes above this voltage.As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 11149.249.750.2%
V TS_WARMTS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage.As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 10047.948.448.9%
V TS_WARMAs Percentage to TS pin bias reference (45°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 11044.344.845.3%
V TS_WARMAs Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 11140.741.241.7%
V TS_WARMAs Percentage to TS pin bias reference (55°C w/ 103AT), TS_TH4_TH5_TH6 = 01137.237.738.2%
V TS_WARMZTS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage.As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 10049.249.750.2%
V TS_WARMZAs Percentage to TS pin bias reference (42.5°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 11045.646.146.6%
V TS_WARMZAs Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 1114242.543%
V TS_WARMZAs Percentage to TS pin bias reference (52.5°C w/ 103AT), TS_TH4_TH5_TH6 = 01138.53939.5%
V TS_HOTTS pin falling voltage threshold for TH6 comparator to transition from TS_WARM toAs Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 10140.741.241.7%
V TS_HOTTS_HOT. Charging is suspended below this voltage.As Percentage to TS pin bias reference (60°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 11133.934.434.9%

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VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

VBUS_UVLOZVBUS VBUS_OVP J PARAMETERJ TEST CONDITIONSMINTYPMAXUNIT
V TS_HOTZTS pin rising voltage threshold for TH6 comparator to transition from TS_HOT to TS_WARM. TS_WARM chargingAs Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 10142.042.543.0%
V TS_HOTZsettings resume above this voltage.As Percentage to TS pin bias reference (57.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 11135.235.736.2%
SWITCHING CONVERTERSWITCHING CONVERTER
F SWPWM switching frequencyOscillator frequency1.351.51.65MHz
MOSFET TURN-ON RESISTANCEMOSFET TURN-ON RESISTANCE
R Q1_ONVBUS to PMID on resistanceT j = -40°C-85°C2634
R Q2_ONBuck high-side switching MOSFET turn on resistance between PMID and SWT j = -40°C-85°C5578
R Q3_ONBuck low-side switching MOSFET turn on resistance between SW and PGNDT j = -40°C-85°C6090
REGN LDOREGN LDO
V REGNREGN LDO output voltageV VBUS = 5V, I REGN = 20mA4.44.6V
V REGNREGN LDO output voltageV VBUS = 9V, I REGN = 20mA4.85.05.2V
V REGNZ_OKREGN not good falling thresholdConverter switching3.2V
V REGNZ_OKREGN not good falling thresholdConverter not switching2.3V
I REGN_LIMREGN LDO current limitV VBUS = 5V, VREGN = 4.3V20mA
I TS_BIAS_FAULTRising threshold to transition from TSBIAS good condition to fault conditionREGN=5V; ISINK applied on TS_BIAS pin2.54.58mA
I TS_BIAS_FAULTZFalling threshold to transition from TSBIAS fault condition to good conditionREGN=5V; ISINK applied on TS_BIAS pin23.857mA
ADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCEADC MEASUREMENT ACCURACY AND PERFORMANCE
t ADC_CONVConversion-time, EachADC_SAMPLE = 0030ms
t ADC_CONVConversion-time, EachADC_SAMPLE = 0115ms
t ADC_CONVMeasurementADC_SAMPLE = 107.5ms
t ADC_CONVConversion-time, EachADC_SAMPLE = 113.75ms
ADC RESEffective ResolutionADC_SAMPLE = 001112bits
ADC RESEffective ResolutionADC_SAMPLE = 011011bits
ADC RESEffective ResolutionADC_SAMPLE = 10910bits
ADC RESEffective ResolutionADC_SAMPLE = 1189bits
ADC MEASUREMENT RANGE AND LSBADC MEASUREMENT RANGE AND LSB
IBUS_ADCADC Bus Current ReadingRange-44A
IBUS_ADCADC Bus Current ReadingLSB2mA
VBUS_ADCADC VBUS Voltage ReadingRange018.00V
VBUS_ADCADC VBUS Voltage ReadingLSB3.97mV
VPMID_ADCADC PMID Voltage ReadingRange018.00V
VPMID_ADCADC PMID Voltage ReadingLSB3.97mV
VBAT_ADCADC BAT Voltage ReadingRange05.572V
VBAT_ADCADC BAT Voltage ReadingLSB1.99mV
VSYS_ADCADC SYS Voltage ReadingRange05.572V
VSYS_ADCLSB1.99mV

VVBUS_UVLOZ < VVBUS < VVBUS_OVP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
IBAT_ADCADC BAT Current ReadingRange-7.54.0A
IBAT_ADCADC BAT Current ReadingLSB4mA
TS_ADCADC TS Voltage ReadingRange as a percent of REGN (-40 °C to 85 °C for 103AT)20.983.2%
TS_ADCADC TS Voltage ReadingLSB0.0961%
TDIE_ADCADC Die Temperature ReadingRange-40140°C
TDIE_ADCADC Die Temperature ReadingLSB0.5°C
I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)I2C INTERFACE (SCL, SDA)
V IHInput high threshold level, SDA and SCL0.78V
V ILInput low threshold level, SDA and SCL0.42V
V OL_SDAOutput low threshold levelSink current = 5mA, 1.2V VDD0.3V
I BIASHigh-level leakage currentPull up rail 1.8V1μA
C BUSCapacitive load for each bus line400pF
LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)LOGIC OUTPUT PIN (INT, STAT)
V OLOutput low threshold levelSink current = 5mA0.3V
I OUT_BIASHigh-level leakage currentPull up rail 1.8V1μA
LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)LOGIC INPUT PIN (CE, QON)
V IH_CEInput high threshold level, /CE0.78V
V IL_CEInput low threshold level, /CE0.4V
I IN_BIAS_CEHigh-level leakage current, /CEPull up rail 1.8V1μA
V IH_QONInput high threshold level, /QON1.3V
V IL_QONInput low threshold level, /QON0.4V
V QONInternal /QON pull up/QON is pulled up internally.5.0V
R QONInternal /QON pull up resistance250

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Voltage range (with respect to GND)VBUS (converter not switching)-226V
Voltage range (with respect to GND)PMID (converter not switching)-0.326V
Voltage range (with respect to GND)BAT, SYS (converter not switching)-0.36V
Voltage range (with respect to GND)SW-2 (50ns)21V
Voltage range (with respect to GND)BTST (when converter switching)-0.327V
Voltage range (with respect to GND)CE, STAT, SCL, SDA, INT, REGN, QON-0.36V
Voltage range (with respect to GND)ILIM, PG, TS, TS_BIAS-0.36V
Output Sink CurrentINT, STAT, PG6mA
Differential VoltageBTST-SW-0.36V
Differential VoltagePMID-VBUS-0.36V
Differential VoltageSYS-BAT-0.36V
T JJunction temperature-40150°C
T stgStorage temperature-55150°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
V VBUSInput voltage3.918V
V BATBattery voltage4.8V
I VBUSInput current3.2A
I SWOutput current (SW)3.5A
I BATFast charging current2A
I BATRMS discharge current (continuously)6A
I BATPeak discharge current (up to 50ms)10A
I REGNMaximum REGN Current20mA
T AAmbient temperature-4085°C
T JJunction temperature-40125°C
L SWInductor for the switching regulator0.682.2μH
C VBUSVBUS capacitor (without de-rating)1μF
C PMIDPMID capacitor (without de-rating)10μF
C SYSSYS capacitor (without de-rating)20500μF

Thermal Information

THERMAL METRIC (1)BQ25628E RYK (QFN) 18 pinsUNIT
R θJAJunction-to-ambient thermal resistance60.1°C/W
R θJC(top)Junction-to-case (top) thermal resistance42.1°C/W
R θJBJunction-to-board thermal resistance13°C/W
Ψ JTJunction-to-top characterization parameter1.3°C/W
Ψ JBJunction-to-board characterization parameter12.8°C/W

Typical Application

A typical application consists of the device configured as an I 2 C controlled power path management device and a single cell battery charger for Li-Ion and Li-polymer batteries used in a wide range of smartphone and other portable devices. It integrates an input reverse-block FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side switching FET (LSFET, Q3), and battery FET (BATFET Q4) between the system and battery. The device also integrates a bootstrap diode for the high-side gate drive.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
BQ25628Texas InstrumentsWQFN-18
BQ25628ERYKRTexas Instruments18-PowerWFQFN
BQ25628ERYKR.ATexas Instruments
BQ25629Texas InstrumentsWQFN-18 (RYK)
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